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Japan–U.S. NAND Alliance Steps Up Investment as Kioxia–SanDisk Capex Reportedly Rises 40% YoY

　　As South Korea’s memory giants shift focus toward 1c DRAM capacity expansion amid surging demand, Global Economic, citing German tech outlet ComputerBase, reports that the Kioxia–SanDisk alliance is moving fast to reassert its position in the NAND market, capitalizing on an investment gap as Samsung Electronics and SK hynix divert resources toward HBM.　　According to the reports, the U.S.–Japan NAND consortium is expected to execute total capital expenditure of $4.5 billion (about KRW 6.75 trillion) in the current fiscal year, marking a 41% year-on-year increase.　　Notably, a key focus of the alliance would likely be the 10th-generation NAND. Nikkei previously reported that Kioxia plans to begin mass production at its Kitakami site in Iwate Prefecture in 2026. However, given the jump to a 332-layer architecture—up from 218 layers in its 8th-generation devices—the company is expected to repurpose its newly operational Kitakami K2 facility, which began production in September, to support output, according to Nikkei.　　ComputerBase, cited by Global Economic, attributes the strong NAND demand supporting Kioxia–SanDisk’s investment to a structural shift in AI workloads: As AI moves from the training-heavy infrastructure build-out phase to large-scale inference deployment, demand is rising for high-performance, ultra-high-capacity storage.　　At the same time, storage is accounting for a growing share of hyperscaler data center capex, while SSD capacity per GPU is more than doubling year over year, the report notes. As a result, next-gen AI servers are increasingly being designed with tens of terabytes of storage per GPU, driving a sustained surge in NAND demand, the report adds.　　Fewer Layers, Comparable Density　　ZDNet also reports that in its recent earnings briefing, Kioxia identified the launch of 10th-generation BiCS NAND as a key priority for fiscal 2026 (April 2026–March 2027). The report adds that the company applies its proprietary BiCS (Bit Cost Scalable) architecture to its scaling roadmap, with the 10th-generation device delivering 59% higher storage density per unit area and a 33% improvement in data transfer speed compared with the 218-layer generation.　　According to ComputerBase, Kioxia’s stacking approach enables comparable density with fewer layers, translating into meaningful cost advantages. A lower stack height also simplifies vertical etching, reduces high-cost equipment runtime, and helps mitigate wafer warpage defects.　　Based on 3D NAND density estimates cited by Global Economic from ComputerBase, Kioxia / SanDisk BiCS10 is projected to reach 37.6Gb per square millimeter in QLC configuration, which would surpass Samsung Electronics’ upcoming 430-layer V10 TLC architecture at around 28.0Gb.　　Samsung, SK hynix Hold Back　　However, TrendForce indicates that major NAND Flash suppliers will add virtually no new production capacity in 2026, and it seems that South Korean memory players are taking a different approach with Kioxia and SanDisk.　　As highlighted by Global Economic, Samsung Electronics and SK hynix have both adjusted their 10th-generation NAND ramp-up schedules: Samsung has reportedly pushed back its V10 production timeline from the second half of 2025 to 2026, while SK hynix is targeting early 2027 for full-scale production.　　ZDNet also reports that Samsung Electronics had initially planned to begin mass production of its 430-layer 10th-generation NAND this year, but the timeline has been delayed to at least 2027, citing technical complexity and softer demand conditions. The report adds that Samsung is still reviewing investment timing, with no concrete equipment orders confirmed, and that SK hynix faces a similar situation.　　Global Economic notes that if the U.S.–Japan NAND alliance succeeds in lowering cost per terabyte and accelerating QLC enterprise SSD adoption, demand could shift more rapidly toward AI data center storage. Even so, Samsung and SK hynix remain competitive, supported by stable 9th-generation yields and strong enterprise SSD customer bases, the report adds.

Key word：

Kioxia

Release time：2026-06-01 10:45 reading：201 Continue reading>>

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TSMC Hints at Potential Further U.S. Expansion; Industry Sources Reportedly See Up to US$250B Investment

　　As TSMC continues expanding its U.S. footprint, comments from Cliff Hou, TSMC Senior Vice President and Deputy Co-COO, have caught industry attention. According to Commercial Times, Hou said at the 2026 SelectUSA Investment Summit that the company “is prepared for growth from any new business opportunities,” remarks the market has interpreted as signaling potential further expansion of TSMC’s U.S. investments. TSMC’s total U.S. investment currently stands at US$165 billion.　　Commercial Times notes that supply chain developments show chip equipment suppliers have also begun establishing U.S. subsidiaries to support TSMC. Industry sources added that TSMC’s total U.S. investment could reach as much as US$250 billion, with the company expected to replicate the Hsinchu Science Park cluster model in Phoenix.　　Meanwhile, Economic Daily News reported that TSMC’s first Arizona fab entered mass production in 4Q24, while its second fab has already been completed and is expected to begin 3nm mass production in the second half of 2027. TSMC previously said construction of its third Arizona fab is already underway, while permits are being sought for a fourth fab and its first advanced packaging facility in the state. The report also noted that TSMC has acquired a second large parcel of land near its existing Arizona site to support future expansion plans.　　Although TSMC’s U.S. fabs are more costly, capacity remains in strong demand, with previous reports indicating that customers had already reserved capacity at all four Arizona fabs, as noted by Economic Daily News. Institutional investors said that, for process technologies below 2nm, TSMC’s related capacity ratio between Taiwan and the U.S. is expected to reach roughly 7:3 by 2030.　　TSMC Reshapes Board Amid Global Expansion　　In addition, TSMC has also recently adjusted its board structure. According to Commercial Times, the company plans to revise its corporate charter by increasing the number of board seats from the current seven to ten directors to nine to twelve, with the proposal set to be discussed at the shareholders’ meeting on June 4.　　The move reflects TSMC’s response to the rapidly changing global business environment and is intended to provide greater flexibility in recruiting directors from diverse professional backgrounds, the report said. It also noted that, as TSMC rapidly expands overseas and continues increasing its U.S. investments, the board will need more members with expertise in international supply chains, geopolitics, and U.S. policy.

Key word：

TSMC

Release time：2026-05-07 13:22 reading：473 Continue reading>>

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MicroLED Gains Focus as Seoul Semiconductor Plans $180M AR Investment, Aledia Reports Breakthrough

　　Amid mounting margin pressure and slowing growth in the LED industry, players are moving beyond traditional segments in search of new momentum, with MicroLED emerging as a key focus. According to MicroLED-info, Seoul Semiconductor plans to invest KRW 250 billion (around $180 million) over the next five years, primarily in the R&D and production of microLED microdisplay modules for AR applications.　　The report suggests that the company has embarked on a government-approved restructuring plan as its core LED package business faces mounting pressure from falling prices and weakening profitability. Under the initiative, the new displays will be built on Seoul Semiconductor’s proprietary WICOP (Wafer Integrated Chip on PCB) technology, the report adds.　　As noted by Maeil Ilbo, founded in 1992, Seoul Semiconductor supplies LED packages across lighting, automotive, and IT, and holds about a 4.8% global share in the optoelectronics market. Despite its proprietary wire-free WICOP technology, the company has come under pressure from persistent price declines and softer demand, weighing on margins, the report explains.　　French MicroLED Startup Achieves Key Milestone　　On the other hand, French startup Aledia, according to MicroLED-info, has successfully demonstrated a fully functional monolithic RGB epitaxial wafer, marking a key milestone for the technology. The achievement validates the company’s end-to-end monolithic RGB process, enabling red, green, and blue emission from a single epi wafer fabricated in a single run, the report notes.　　According to the company, its proprietary nanowire-based architecture can grow nanowires in a single processing step, with diameters ranging from 100 nm to 400 nm depending on the target wavelength, enabling full RGB capability within one unified structure.　　On device performance, the company demonstrated a 2.5 μm sub-pixel pitch—equivalent to a 5.0 μm × 5.0 μm pixel size—and outlined a roadmap to further shrink this to 2.0 μm for both monochrome and monolithic RGB displays, MicroLED-info suggests.　　In parallel, Aledia has validated its 9V microLED devices on 200 mm silicon wafers, including 15×30 μm blue emitters on the same platform. The company also confirmed the commercial availability of its 3D-Nano microLED technology built on 200 mm silicon in February, the report adds.

Key word：

Optical Semiconductors

Release time：2026-04-27 10:39 reading：600 Continue reading>>

ROHM Group Company SiCrystal and <span style='color:red'>STM</span>icroelectronics Expand Silicon Carbide Wafer Supply Agreement

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ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

　　Kyoto, Japan and Geneva, Switzerland, April 22, 2024 – ROHM (TSE: 6963) and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announced today the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.　　Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions”.　　“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality”. said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.　　Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.　　About STMicroelectronics　　At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027.　　Further information can be found at www.st.com .　　About ROHM　　Founded in 1958, ROHM provides ICs and discrete semiconductor devices characterized by outstanding quality and reliability for a broad range of markets, including automotive, industrial equipment and consumer market via its global development and sales network.　　In the analog power field, ROHM proposes the suitable solution for each application with power devices such as SiC and driver ICs to maximize their performance, and peripheral components such as transistors, diodes, and resistors.　　Further information on ROHM can be found at www.rohm.com .　　About SiCrystal　　SiCrystal, a ROHM group company, is one of the global market leaders for monocrystalline silicon carbide wafers. SiCrystal’s advanced semiconductor substrates provide the basis for the highly efficient use of electrical energy in electric vehicles, fast charging stations, renewable energies and in various fields of industrial applications.　　Further information on SiCrystal can be found at www.sicrystal.de .

Key word：

ROHM

Release time：2024-04-24 11:10 reading：1837 Continue reading>>

Murata’s Latest Partnership Aids IoT Development, Enabling M.2 Wireless Module Integration for <span style='color:red'>STM</span>32 Nucleo Boards

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Murata’s Latest Partnership Aids IoT Development, Enabling M.2 Wireless Module Integration for STM32 Nucleo Boards

　　Murata, a leading electronics manufacturer, in collaboration with Infineon are pleased to announce a new IoT development solution. This comprehensive innovation allows Murata’s Infineon-based Wi-Fi® and Bluetooth® modules to seamlessly integrate with a wide range of STM32 Nucleo-144 boards, helping to reduce the time-to-market for many wireless-enabled applications.　　The joint project is built on the collaboration with Infineon and Murata. / By combining each company’s extensive expertise, the collaboration has engineered a complete hardware and software solution that addresses a number of IoT development requirements. At its core, the platform solution allows STM32 microcontroller to connect Murata M.2 wireless modules featuring Infineon chipsets. Providing the hardware connection is Murata’s new Nucleo-144 to M.2 adapted board, while software integration is enabled through Infineon AIROC™ STM32 Expansion Pack. Whether you are evaluating low-power implementations, such as wearables and battery-powered devices, or high-performance deployments, such as industrial equipment and smart homes, this exciting solution creates a more efficient evaluation process.　　Murata Nucleo-144 to M.2 Adapter board　　Providing physical M.2 support for STMicroelectronics STM32 Nucleo board for microcontrollers, including the popular STM32U5 and STM32H5 series, is the Murata Nucleo-144 to M.2 adapter board. This innovative PCB-based adapter effortlessly mounts to the STM32 and features a convenient top-mounted M.2 socket. The M.2 dock grants effortless physical integration and swapping of Embedded Artists Murata M.2 modules which use Infineon chipsets. This allows the STM32 to accept a wide range of Wi-FiWi-Fi® and Bluetooth® combination units, including Wi-Fi 4, Wi-Fi 5 and industrial grade modules.　　AIROC™ STM32 Expansion Pack　　Produced by Infineon, a leading global semiconductor manufacturer, Infineon AIROC™ STM32 Expansion Pack provides the framework required to facilitate the Murata hardware. Using the Common Microcontroller Software Interface Standard (CMSIS), the AIROC™ STM32 Expansion Pack enables the integration of Infineon based Wi-Fi® and Bluetooth® module with STM32 STM32Cube ecosystem, including STM32CubeMX tool. Within the semiconductor industry, CMSIS establishes a consistent approach for software components, hardware parameters and code, helping to increase development productivity. Documentation, libraries and example projects are also available on Infineon’s dedicated Expansion Pack GitHub page,helping to support the quick deployment of your hardware environment.　　Innovation Through Collaboration　　Through the Infineon AIROC™ STM32 Expansion Pack, engineers can leverage an effective design environment to evaluate a range of Murata M.2 wireless modules (featuring Infineon chipsets) with STM32 Nucleo boards. With full support from dependable hardware, extensive documentation and example libraries, this comprehensive solution is the perfect tool for accelerating IoT development across an extensive variety of applications.　　Comment from Infineon　　Neil Chen, Director, Wi-Fi Product Line Marketing, IoT Compute and Wireless Business Unit at Infineon said “To reduce the barrier to entry for first-time IoT developers, semiconductor and module companies must come together to offer simple, easy-to-use and ease-to-productize solutions to market. Our collaboration with Murata does just that by leveraging our industry-leading AIROC™ Wi-Fi and Bluetooth portfolio to simplify the development of next-generation IoT products for a variety of applications.”　　Comment from Murata　　Masatomo Hashimoto, Director, Connectivity Module Division, Communication and Sensor Business Division, Murata Manufacturing Co. Ltd., said “We are excited to collaborate with Infineon, a global leader in semiconductors in the IoT and power systems to deliver this innovation. Customers face many barriers when bringing connectivity products to market, but this partnership provides a solution for a variety of development challenges and reduces time-to-market for a wide range of applications.”

Key word：

Murata

Release time：2024-03-08 14:47 reading：1393 Continue reading>>

<span style='color:red'>STM</span>icroelectronics to Invest EUR 5 Billion in New SiC Wafer Fab

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STMicroelectronics to Invest EUR 5 Billion in New SiC Wafer Fab

　　STMicroelectronics, following its EUR 7.5 billion wafer fab project with GlobalFoundries in Crolles, France. is set to invest EUR 5 billion in building a new SiC super semiconductor wafer fab in Catania, Sicily, Italy. The fab in Italy will specialize in producing SiC chips, a pivotal technology for electric vehicles with substantial growth potential, according to French media L’Usine Nouvelle on November 26th,　　STMicroelectronics competitively plans to transition to 8-inch wafers starting from 2024. The company will integrate Soitec’s SmartSiC technology to enhance efficiency and reduce carbon emissions. Simultaneously, STMicroelectronics aims to increase capacity, achieve internal manufacturing, and collaborate with Chinese firm Sanan Optoelectronics to raise SiC chip-related revenue from the expected USD 1.2 billion in 2023 to USD 5 billion by 2030.　　On June 7th earlier this year, STMicroelectronics and Sanan Optoelectronics announced a joint venture to establish a new 8-inch SiC device fab in Chongqing, China, with an anticipated total investment of USD 3.2 billion.　　To ensure the successful implementation of this extensive investment plan, Sanan Optoelectronics said to utilize its self-developed SiC substrate process to construct and operate a new 8-inch SiC substrate fab independently.　　TrendForce: over 90% SiC market share by major global players　　According to TrendForce, the SiC industry is currently dominated by 6-inch substrates, holding up to 80% market share, while 8-inch substrates only account for 1%. Transitioning to larger 8-inch substrates is a key strategy for further reducing SiC device costs.　　8-inch SiC substrates offer significant cost advantages than 6-inch substrates. The industry’s major players in China, including SEMISiC, Jingsheng Mechanical & Electrical Co., Ltd. (JSG), Summit Crystal, Synlight Semiconductor, KY Semiconductor, and IV-SemiteC, are advancing the development of 8-inch SiC substrates. This shift from the approximately 45% of total production costs associated with substrates is expected to facilitate the broader adoption of SiC devices and create a positive cycle for major companies.　　Not only Chinese companies but also international semiconductor giants like Infineon Technologies and Onsemi are actively vying for a share of the market. Infineon has already prepared the first batch of 8-inch wafer samples in its fab and plans to convert them into electronic samples soon, with mass production applications scheduled before 2030. International device companies like Onsemi and ROHM have also outlined development plans for 8-inch SiC wafers.　　Currently, major companies hold over 90% of the market share, intensifying competition. A slowdown in progress could provide opportunities for followers. According to TrendForce, the market share of the top 5 SiC power semiconductor players in 2022 was dominated by STMicroelectronics (36.5%), Infineon (17.9%), Wolfspeed (16.3%), Onsemi (11.6%), and ROHM (8.1%), leaving the remaining companies with only 9.6%.

Key word：

STMicroelectronics

Release time：2023-11-30 10:53 reading：4063 Continue reading>>

AMEYA360:<span style='color:red'>STM</span>icroelectronics X-NUCLEO-53L8A1 Sensor Expansion Board

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AMEYA360:STMicroelectronics X-NUCLEO-53L8A1 Sensor Expansion Board

　　STMicroelectronics X-NUCLEO-53L8A1 Sensor Expansion Board is an expansion board for any STM32 Nucleo board equipped with Arduino R3 connectors. It provides a complete evaluation kit that allows the user to learn, evaluate, and develop applications based on the VL53L8 series Time-of-Flight sensors.　　The STMicroelectronics X-NUCLEO-53L8A1 expansion board is delivered with a cover glass holder. The user can fit three spacers of 0.25, 0.5, and 1mm height below the cover glass to simulate air gaps. Several ST expansion boards can be stacked through the Arduino? connectors, which allow, for example, the development of VL53L8 series ToF applications with Bluetooth? Low Energy or Wi-Fi interfaces.　　FEATURES　　VL53L8CX Time-of-Flight 8x8 multizone sensor with enhanced ranging performances　　Accurate absolute ranging distance, independent of the reflectance of the target　　Up to 400cm ranging　　Histogram-based technology　　Multiobject detection capability　　0.25, 0.5, and 1mm spacers to simulate air gaps　　One cover glass to protect the sensor from dust　　Compatible with STM32 Nucleo development boards　　Equipped with Arduino UNO R3 connectors　　Full system software supplied, including code examples and a graphical user interface　　RoHS, CE, UKCA, and China RoHS compliant　　ADDITIONAL RESOURCES　　Datasheet　　User Manual

Key word：

ST

Release time：2023-04-12 10:58 reading：2601 Continue reading>>

<span style='color:red'>STM</span>icroelectronics ALED7709 Automotive LED Drivers

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STMicroelectronics ALED7709 Automotive LED Drivers

　　STMicroelectronics ALED7709 Automotive LED Drivers are AEC-Q100 Grade1 qualified and combine a boost/SEPIC controller and four low-side constant-current sinkers. The STMicroelectronics ALED7709 is designed to drive strings of high-brightness LEDs. The switching converter section provides the supply rail for the LED strings, whose value is constantly optimized for maximum efficiency. The boost/SEPIC controller supports the external synchronization and spread spectrum.　　FEATURES　　AEC-Q100 Grade1 qualified　　Operating temperature range -40°C < TJ < 150°C　　4.5V to 42V operating input voltage range　　Up to 60V tolerant for load dump @ 24V battery　　Supports battery cranking events down to 4V supply　　Simultaneous or exclusive control by PWMI and I2C interface　　Switching controller section　　Low shutdown current ISHDN < 15?A　　Fixed frequency peak current-mode controller　　Cycle-by-cycle power switch OCP　　Adjustable (250kHz to 2.2MHz) switching frequency with optional spread spectrum　　Synchronized boost and SEPIC topologies support　　Line switch control for standby power saving and inrush current protection　　Input overvoltage and output short-circuit protection　　LED strings control section　　4 x 40V rated constant current outputs　　Adjustable up to 200mA per channel　　±2% typ. output current accuracy　　Mixed PWM and Analog dimming　　100Hz to 12.8kHz dimming frequency　　Dimming ratio 10000:1 at 100Hz　　LED temperature sensor (NTC) management　　Selectable channels phase-shifting and adjustable Rise/Fall time for reducing EMI　　Open channel, LED short-circuit detection　　Two versions are available ALED7709A and ALED7709B　　APPLICATIONS　　Automotive lighting and backlighting　　Cluster/infotainment display　　Head-Up Display (HUD)　　Instrument lighting system　　Ambient light

Key word：

ST,ALED7709

Release time：2023-04-07 11:39 reading：2573 Continue reading>>

AMEYA360;<span style='color:red'>STM</span>icroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM

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AMEYA360;STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM

　　STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM is based on Non-Volatile Memory (NVMe) technology. This M95P16 comes with byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to EEPROM technology. The M95P16 EEPROM is organized as 4096 programmable pages of 512 bytes each, accessed through an SPI bus, with high-performance dual-and quad-SPI outputs. This M95P16 EEPROM features ultra-low power consumption, ECC for high memory reliability (DEC, TED), Schmitt trigger inputs for noise filtering, and electronic identification. The M95P16 EEPROM supports up to 80MHz clock frequency, 1.6V to 3.6V supply voltage range, and is ECOPACK2 (RoHS compliant) and halogen-free.　　The M95P16 EEPROM offers two additional (identification) 512-byte pages. The first contains identification data and, upon request, the UID. The second can store sensitive application parameters, which later can be permanently locked in read-only mode. This M95P16 EEPROM accepts page/block/sector/chip erase commands to set the memory to an erased state.　　FEATURES　　ECC for high memory reliability (DEC and TED)　　Schmitt trigger inputs for noise filtering　　Output buffer programmable strength　　Operating status flags for ISO26262　　Software reset　　Write protection by block, with top/bottom option　　Unique ID upon request　　Electronic identification　　Supports SFDP (serial flash discoverable parameters) mode　　JEDEC standard manufacturer identification　　Package:　　ECOPACK2 (RoHS compliant) and halogen-free packages:　　DFN8 2mm x 3mm　　SO8N　　WLCSP8　　SPECIFICATIONS　　Interface:　　Supports Serial Peripheral Interface (SPI) and dual/quad outputs　　1.6V to 3.6V VCC wide voltage range　　Temperature range:　　-40°C to 85°C (industrial)　　-40°C to 105°C (extended)　　Fast read:　　50MHz read single output　　80MHz fast read single/dual/quad output with one dummy byte　　Memory:　　16 Mbit of page EEPROM　　32-Kbyte blocks and 4-Kbyte sectors　　512 bytes page size　　Two identification pages　　500k cycles on full temperature range write endurance　　Data retention:　　100 years　　10 years after 500k cycles　　Ultra-low power consumption:　　0.6μA (typical) in deep power-down mode　　16μA (typical) in standby mode　　800μA (typical) for read single at 10MHz　　1.5mA (typical) for page write　　Current peak control <3mA　　High write/erase performance:　　Fast write/program/erase times:　　2ms (typical) for byte and page write (includes auto-erase and program) for 512 bytes　　1.2ms (typical) for page program (512 bytes)　　1.1ms (typical) for page erase　　1.3ms (typical) for sector erase　　4.0ms (typical) for block erase　　8ms (typical) for chip erase　　Page program with buffer load

Key word：

AMEYA360,STM

Release time：2023-03-28 14:48 reading：2120 Continue reading>>

AMEYA360:<span style='color:red'>STM</span>icroelectronics <span style='color:red'>STM</span>32H5 Arm® Cortex®-M33 32-Bit MCU+FPU

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AMEYA360:STMicroelectronics STM32H5 Arm® Cortex®-M33 32-Bit MCU+FPU

　　TMicroelectronics STM32H5 Arm? Cortex?-M33 32-Bit MCU+FPU extends the STM32 high-performance portfolio and offers enhanced performance and power efficiency. The STMicroelectronics STM32H5 has 128KB of Flash, 32KB of RAM, 25- to 64-pin WLCSP packages, and LQFP profiles. The line contains the Arm Cortex-M33 with DSP and floating‐point unit (FPU) running up to 250MHz.　　FEATURES　　High performance at 250MHz　　Delivers 375 DMIPS/1023 CoreMark performance executing from Flash memory　　0-wait states using ST's ART Accelerator?　　Embedded peripherals with up to 13 communication peripherals, including I3C, FD-CAN, and USB 2.0 full-speed host and device　　Power efficiency with 86?/MHz typical @VDD= 3.3V and 25°C in run mode (peripherals off)　　54A typical in stop mode (low-power mode)　　3.5A typical in standby mode (low-power mode)　　380nA typical in VBAT mode with RTC (low-power mode)　　APPLICATIONS　　Industrial (PLC, industrial motor control, pumps, and compressors)　　Smart home (air conditioner, refrigerators, freezers, central alarm, system, washing machines)　　Personal electronics (keyboard, smartphones, IoT tags, tracking devices)　　Smart city (industrial communication, lighting controls, digital power)　　Medical and healthcare (CPAP and respirators, dialysis machines, pills distributors, powered patient beds)

Key word：

AMEYA360,STM,STM32H5

Release time：2023-03-13 13:26 reading：3623 Continue reading>>

model	brand	Quote
CDZVT2R20B	ROHM Semiconductor
TL431ACLPR	Texas Instruments
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments

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