ROHM Group Company SiCrystal and <span style='color:red'>STMicroelectronics</span> Expand Silicon Carbide Wafer Supply Agreement
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ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

　　Kyoto, Japan and Geneva, Switzerland, April 22, 2024 – ROHM (TSE: 6963) and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announced today the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.　　Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions”.　　“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality”. said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.　　Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.　　About STMicroelectronics　　At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027.　　Further information can be found at www.st.com .　　About ROHM　　Founded in 1958, ROHM provides ICs and discrete semiconductor devices characterized by outstanding quality and reliability for a broad range of markets, including automotive, industrial equipment and consumer market via its global development and sales network.　　In the analog power field, ROHM proposes the suitable solution for each application with power devices such as SiC and driver ICs to maximize their performance, and peripheral components such as transistors, diodes, and resistors.　　Further information on ROHM can be found at www.rohm.com .　　About SiCrystal　　SiCrystal, a ROHM group company, is one of the global market leaders for monocrystalline silicon carbide wafers. SiCrystal’s advanced semiconductor substrates provide the basis for the highly efficient use of electrical energy in electric vehicles, fast charging stations, renewable energies and in various fields of industrial applications.　　Further information on SiCrystal can be found at www.sicrystal.de .
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Release time：2024-04-24 11:10 reading：1057 Continue reading>>
<span style='color:red'>STMicroelectronics</span> to Invest EUR 5 Billion in New SiC Wafer Fab
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STMicroelectronics to Invest EUR 5 Billion in New SiC Wafer Fab

　　STMicroelectronics, following its EUR 7.5 billion wafer fab project with GlobalFoundries in Crolles, France. is set to invest EUR 5 billion in building a new SiC super semiconductor wafer fab in Catania, Sicily, Italy. The fab in Italy will specialize in producing SiC chips, a pivotal technology for electric vehicles with substantial growth potential, according to French media L’Usine Nouvelle on November 26th,　　STMicroelectronics competitively plans to transition to 8-inch wafers starting from 2024. The company will integrate Soitec’s SmartSiC technology to enhance efficiency and reduce carbon emissions. Simultaneously, STMicroelectronics aims to increase capacity, achieve internal manufacturing, and collaborate with Chinese firm Sanan Optoelectronics to raise SiC chip-related revenue from the expected USD 1.2 billion in 2023 to USD 5 billion by 2030.　　On June 7th earlier this year, STMicroelectronics and Sanan Optoelectronics announced a joint venture to establish a new 8-inch SiC device fab in Chongqing, China, with an anticipated total investment of USD 3.2 billion.　　To ensure the successful implementation of this extensive investment plan, Sanan Optoelectronics said to utilize its self-developed SiC substrate process to construct and operate a new 8-inch SiC substrate fab independently.　　TrendForce: over 90% SiC market share by major global players　　According to TrendForce, the SiC industry is currently dominated by 6-inch substrates, holding up to 80% market share, while 8-inch substrates only account for 1%. Transitioning to larger 8-inch substrates is a key strategy for further reducing SiC device costs.　　8-inch SiC substrates offer significant cost advantages than 6-inch substrates. The industry’s major players in China, including SEMISiC, Jingsheng Mechanical & Electrical Co., Ltd. (JSG), Summit Crystal, Synlight Semiconductor, KY Semiconductor, and IV-SemiteC, are advancing the development of 8-inch SiC substrates. This shift from the approximately 45% of total production costs associated with substrates is expected to facilitate the broader adoption of SiC devices and create a positive cycle for major companies.　　Not only Chinese companies but also international semiconductor giants like Infineon Technologies and Onsemi are actively vying for a share of the market. Infineon has already prepared the first batch of 8-inch wafer samples in its fab and plans to convert them into electronic samples soon, with mass production applications scheduled before 2030. International device companies like Onsemi and ROHM have also outlined development plans for 8-inch SiC wafers.　　Currently, major companies hold over 90% of the market share, intensifying competition. A slowdown in progress could provide opportunities for followers. According to TrendForce, the market share of the top 5 SiC power semiconductor players in 2022 was dominated by STMicroelectronics (36.5%), Infineon (17.9%), Wolfspeed (16.3%), Onsemi (11.6%), and ROHM (8.1%), leaving the remaining companies with only 9.6%.
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Release time：2023-11-30 10:53 reading：2447 Continue reading>>
AMEYA360:<span style='color:red'>STMicroelectronics</span> X-NUCLEO-53L8A1 Sensor Expansion Board
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AMEYA360:STMicroelectronics X-NUCLEO-53L8A1 Sensor Expansion Board

　　STMicroelectronics X-NUCLEO-53L8A1 Sensor Expansion Board is an expansion board for any STM32 Nucleo board equipped with Arduino R3 connectors. It provides a complete evaluation kit that allows the user to learn, evaluate, and develop applications based on the VL53L8 series Time-of-Flight sensors.　　The STMicroelectronics X-NUCLEO-53L8A1 expansion board is delivered with a cover glass holder. The user can fit three spacers of 0.25, 0.5, and 1mm height below the cover glass to simulate air gaps. Several ST expansion boards can be stacked through the Arduino? connectors, which allow, for example, the development of VL53L8 series ToF applications with Bluetooth? Low Energy or Wi-Fi interfaces.　　FEATURES　　VL53L8CX Time-of-Flight 8x8 multizone sensor with enhanced ranging performances　　Accurate absolute ranging distance, independent of the reflectance of the target　　Up to 400cm ranging　　Histogram-based technology　　Multiobject detection capability　　0.25, 0.5, and 1mm spacers to simulate air gaps　　One cover glass to protect the sensor from dust　　Compatible with STM32 Nucleo development boards　　Equipped with Arduino UNO R3 connectors　　Full system software supplied, including code examples and a graphical user interface　　RoHS, CE, UKCA, and China RoHS compliant　　ADDITIONAL RESOURCES　　Datasheet　　User Manual
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Release time：2023-04-12 10:58 reading：1814 Continue reading>>
<span style='color:red'>STMicroelectronics</span> ALED7709 Automotive LED Drivers
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STMicroelectronics ALED7709 Automotive LED Drivers

　　STMicroelectronics ALED7709 Automotive LED Drivers are AEC-Q100 Grade1 qualified and combine a boost/SEPIC controller and four low-side constant-current sinkers. The STMicroelectronics ALED7709 is designed to drive strings of high-brightness LEDs. The switching converter section provides the supply rail for the LED strings, whose value is constantly optimized for maximum efficiency. The boost/SEPIC controller supports the external synchronization and spread spectrum.　　FEATURES　　AEC-Q100 Grade1 qualified　　Operating temperature range -40°C < TJ < 150°C　　4.5V to 42V operating input voltage range　　Up to 60V tolerant for load dump @ 24V battery　　Supports battery cranking events down to 4V supply　　Simultaneous or exclusive control by PWMI and I2C interface　　Switching controller section　　Low shutdown current ISHDN < 15?A　　Fixed frequency peak current-mode controller　　Cycle-by-cycle power switch OCP　　Adjustable (250kHz to 2.2MHz) switching frequency with optional spread spectrum　　Synchronized boost and SEPIC topologies support　　Line switch control for standby power saving and inrush current protection　　Input overvoltage and output short-circuit protection　　LED strings control section　　4 x 40V rated constant current outputs　　Adjustable up to 200mA per channel　　±2% typ. output current accuracy　　Mixed PWM and Analog dimming　　100Hz to 12.8kHz dimming frequency　　Dimming ratio 10000:1 at 100Hz　　LED temperature sensor (NTC) management　　Selectable channels phase-shifting and adjustable Rise/Fall time for reducing EMI　　Open channel, LED short-circuit detection　　Two versions are available ALED7709A and ALED7709B　　APPLICATIONS　　Automotive lighting and backlighting　　Cluster/infotainment display　　Head-Up Display (HUD)　　Instrument lighting system　　Ambient light
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Release time：2023-04-07 11:39 reading：1957 Continue reading>>
AMEYA360;<span style='color:red'>STMicroelectronics</span> M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM
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AMEYA360;STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM

　　STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM is based on Non-Volatile Memory (NVMe) technology. This M95P16 comes with byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to EEPROM technology.       The M95P16 EEPROM is organized as 4096 programmable pages of 512 bytes each, accessed through an SPI bus, with high-performance dual-and quad-SPI outputs. This M95P16 EEPROM features ultra-low power consumption, ECC for high memory reliability (DEC, TED), Schmitt trigger inputs for noise filtering, and electronic identification. The M95P16 EEPROM supports up to 80MHz clock frequency, 1.6V to 3.6V supply voltage range, and is ECOPACK2 (RoHS compliant) and halogen-free.　　The M95P16 EEPROM offers two additional (identification) 512-byte pages. The first contains identification data and, upon request, the UID. The second can store sensitive application parameters, which later can be permanently locked in read-only mode. This M95P16 EEPROM accepts page/block/sector/chip erase commands to set the memory to an erased state.　　FEATURES　　ECC for high memory reliability (DEC and TED)　　Schmitt trigger inputs for noise filtering　　Output buffer programmable strength　　Operating status flags for ISO26262　　Software reset　　Write protection by block, with top/bottom option　　Unique ID upon request　　Electronic identification　　Supports SFDP (serial flash discoverable parameters) mode　　JEDEC standard manufacturer identification　　Package:　　ECOPACK2 (RoHS compliant) and halogen-free packages:　　DFN8 2mm x 3mm　　SO8N　　WLCSP8　　SPECIFICATIONS　　Interface:　　Supports Serial Peripheral Interface (SPI) and dual/quad outputs　　1.6V to 3.6V VCC wide voltage range　　Temperature range:　　-40°C to 85°C (industrial)　　-40°C to 105°C (extended)　　Fast read:　　50MHz read single output　　80MHz fast read single/dual/quad output with one dummy byte　　Memory:　　16 Mbit of page EEPROM　　32-Kbyte blocks and 4-Kbyte sectors　　512 bytes page size　　Two identification pages　　500k cycles on full temperature range write endurance　　Data retention:　　100 years　　10 years after 500k cycles　　Ultra-low power consumption:　　0.6μA (typical) in deep power-down mode　　16μA (typical) in standby mode　　800μA (typical) for read single at 10MHz　　1.5mA (typical) for page write　　Current peak control <3mA　　High write/erase performance:　　Fast write/program/erase times:　　2ms (typical) for byte and page write (includes auto-erase and program) for 512 bytes　　1.2ms (typical) for page program (512 bytes)　　1.1ms (typical) for page erase　　1.3ms (typical) for sector erase　　4.0ms (typical) for block erase　　8ms (typical) for chip erase　　Page program with buffer load
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Release time：2023-03-28 14:48 reading：1594 Continue reading>>
AMEYA360:<span style='color:red'>STMicroelectronics</span> STM32H5 Arm® Cortex®-M33 32-Bit MCU+FPU
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AMEYA360:STMicroelectronics STM32H5 Arm® Cortex®-M33 32-Bit MCU+FPU

　　TMicroelectronics STM32H5 Arm? Cortex?-M33 32-Bit MCU+FPU extends the STM32 high-performance portfolio and offers enhanced performance and power efficiency. The STMicroelectronics STM32H5 has 128KB of Flash, 32KB of RAM, 25- to 64-pin WLCSP packages, and LQFP profiles. The line contains the Arm Cortex-M33 with DSP and floating‐point unit (FPU) running up to 250MHz.　　FEATURES　　High performance at 250MHz　　Delivers 375 DMIPS/1023 CoreMark performance executing from Flash memory　　0-wait states using ST's ART Accelerator?　　Embedded peripherals with up to 13 communication peripherals, including I3C, FD-CAN, and USB 2.0 full-speed host and device　　Power efficiency with 86?/MHz typical @VDD= 3.3V and 25°C in run mode (peripherals off)　　54A typical in stop mode (low-power mode)　　3.5A typical in standby mode (low-power mode)　　380nA typical in VBAT mode with RTC (low-power mode)　　APPLICATIONS　　Industrial (PLC, industrial motor control, pumps, and compressors)　　Smart home (air conditioner, refrigerators, freezers, central alarm, system, washing machines)　　Personal electronics (keyboard, smartphones, IoT tags, tracking devices)　　Smart city (industrial communication, lighting controls, digital power)　　Medical and healthcare (CPAP and respirators, dialysis machines, pills distributors, powered patient beds)
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Release time：2023-03-13 13:26 reading：3182 Continue reading>>
Gridspertise and <span style='color:red'>STMicroelectronics</span> Expand Collaboration
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Gridspertise and STMicroelectronics Expand Collaboration

　　Gridspertise and STMicroelectronics (ST) have entered a new phase of their long-term collaboration on smart-meter technologies. The announcement was made at DistribuTECH 2023.　　The two companies’ collaboration started in the early 2000’s with one of Gridspertise’s shareholders Enel; today more than 65 million Gridspertise smart meters deployed in Spain, Eastern Europe, and Latin America leverage the power-line communication (PLC) technologies provided by ST. Moreover, ST’s latest PLC system-on-chip has been integrated in Gridspertise smart meters for Italy to enable a near real-time cyber-secure communication channel for in-home devices; the so-called Chain 2 technology. Now, Gridspertise and ST are working together to extend Chain 2 to new metering solutions in the Gridspertise portfolio, making it suitable for the U.S. and other geographies.　　For end customers, Chain 2 technology improves awareness of the energy consumed and self-produced. It enables a multitude of new enhanced services that simplify their energy usage through home automation. Chain 2 technology encourages a more active role for all the players in the energy market, as well as the penetration of distributed renewable sources. For example, the technology allows to recommend to the end customer tailor-made behaviors based on real-time data production from its own generation system, like photovoltaic panels.  It also enables the smart meter to collect real-time data on home appliances’ consumption, that can be used, for example, to modulate the charging power of an EV charger according to the available capacity and other demands for power in the house.　　Furthermore, Gridspertise and ST are collaborating in multiple other areas, too. Beyond working on ANSI C communication standard for the U.S. market, the Companies are cooperating for the adoption of the latest DLMS1-certified standards into Gridspertise smart meters, to further enhance interoperability and interchangeability between devices and systems.　　“Working together with other key industry leaders is fundamental to accelerating grid digitalization and to promoting an active role for end users in the energy transition,” said Gianni Ceneri, Chief Technology Officer, Gridspertise. “We are pleased to strengthen our strategic collaboration with STMicroelectronics leveraging shared best practices for the development of innovative solutions to serve an ever-increasing number of markets and bring benefits to new customers, starting from the U.S. where Gridspertise is enhancing its activities through its North American platform to better support power grid operators and utilities in the region.”　　“As Gridspertise accelerates the growth of its business, ST continues to develop and contribute our unique system know-how, dedicated support, and ready-to-use solutions based on our advanced semiconductor integration capabilities,” added Domenico Arrigo, General Manager of STMicroelectronics’s Industrial and Power Conversion Division in the Analog, MEMS & Sensors Group. “We are maintaining and enhancing our connection as a key technology provider for Gridspertise solutions and services, and with them delivering smart and sustainable grids that are robust, secure, resilient, and reliable.”　　This latest step in the collaboration between Gridspertise and ST perfectly suits Gridspertise’s mission to deliver a new era of sustainable and reliable smart grids, which is extremely timely in the current U.S. context, where new federal policies have unleashed a wave of investment in the energy transition and grid modernization. Together, ST and Gridspertise are unlocking the penetration of new flexible and distributed sustainable energy sources and the active participation of end customers through increasingly digitalized grids.　　Both Companies have branches in the U.S. to directly engage with tech companies, power grid operators, policy makers, and regulators, accelerating the region’s electric future.
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Release time：2023-02-24 15:21 reading：1929 Continue reading>>
<span style='color:red'>STMicroelectronics</span> 32-Channel Ultrasound Transmitter Suited to Handheld Scanners
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STMicroelectronics 32-Channel Ultrasound Transmitter Suited to Handheld Scanners

　　STMicroelectronics has expanded its family of advanced ultrasound transmitters by adding a 32-channel variant with high output current for portable applications. The new transmitter, STHVUP32, provides ±800mA aimed at portable systems that demand extra drive capability for a coaxial cable-mounted probe.　　Joining the portfolio alongside the 64-channel STHVUP64, the new 32-channel version contains similar features to increase performance and integration in next-generation affordable, high-performing scanners for medical and industrial applications. These include innovations to maximize image quality, built-in digital beam steering, a space-saving driver architecture, and low power consumption.　　The STHVUP32 has 5-level output capability, in addition to the common 3-level output, which enhances flexibility to optimize the picture quality. Its high output current allows driving the scanner’s piezoelectric transducer at high speed to enable multiple imaging modes. It also helps achieve minimum pulse duration of 5ns for superior image detail. The transmitter supports continuous-wave (CW) and pulsed-wave (PW) operating modes to allow various types of analysis including cavities and liquid flow.　　The digital beam steering enhances directional control by permitting greater precision than conventional analog steering using delay circuits. By integrating the beam-steering logic, the transmitter can be used without a companion chip such as an FPGA. This saves PCB space and routing complexity, as well as bypassing FPGA-design challenges.　　Also new, the transmitter has a self-biased driver architecture that saves connecting decoupling capacitors to the transmitter’s power-supply pins. This helps ensure a smaller circuit footprint, as well as lowering the bill of materials (BOM). In addition, the STHVUP32 is housed in a smaller package than comparable alternative ICs thereby helping designers create next-generation products in even smaller form factors.　　While having extremely low power consumption, which is key for battery-operated systems, the STHVUP32 is richly featured for a superior user experience. There is on-chip memory for storing transmission patterns, and synchronization is possible using a clock signal up to 200MHz to enhance image quality by minimizing jitter. The IC also provides a communication port that supports multiple CMOS signaling standards.　　Built-in protection includes noise blocking, thermal protection, under-voltage protection, and recirculating current protection. There is also a diagnostic register that allows directly reading the causes of interrupts to ease debugging in the event of a malfunction.　　The STHVUP32 is built using ST’s proven BCD8s-SOI technology that supports analog (bipolar), digital (CMOS), and power (DMOS) circuits on the same die. It’s in production now, in a 11.5mm x 10.5mm x 1.35mm 168-ball FC-BGA168 package.
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Release time：2023-02-22 15:47 reading：2863 Continue reading>>
Ameya360:<span style='color:red'>STMicroelectronics</span> SGT120R65AL e-mode PowerGaN Transistor
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Ameya360:STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor

　　STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor offers 650V and 15A while combining well-established packaging technology. The SGT120R65AL G-HEMT device features extremely low conduction losses, high current capability, and ultra-fast switching operation. These features allow the STM SGT120R65AL to achieve high power density and unbeatable efficiency.　　FEATURES　　Enhancement mode normally-off transistor　　Very high switching speed　　High power management capability　　Extremely low capacitances　　Kelvin source pad for optimum gate driving　　Zero reverse recovery charge　　APPLICATIONS　　Adapters for tablets, notebooks, and AIO　　USB Type-C PD adapters and quick chargers　　Wireless chargers　　APPLICATION CIRCUIT
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Release time：2023-02-21 11:39 reading：3355 Continue reading>>
Ameya360:<span style='color:red'>STMicroelectronics</span> Recognized as Top 100 Global Innovator 2023
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Ameya360:STMicroelectronics Recognized as Top 100 Global Innovator 2023

　　STMicroelectronics has been named in Clarivate’s Top 100 Global Innovators 2023 list, in recognition of the company’s efforts in R&D and innovation.　　“Innovation is at the core of value creation and competitive advantage for our company.  It enables us, together with customers and partners, to create unique technologies and products that provide solutions for a more sustainable future,” said Alessandro Cremonesi, Executive Vice President, Chief Innovation Officer, STMicroelectronics. “Being recognized as a winner of the Top 100 Global Innovator Award for the fifth time demonstrates the quality of our R&D, and the excellence of our teams and their creativity.”　　In 2022, ST invested 12% of its revenues in R&D, has over 9,000 R&D employees, and engages in extensive collaboration with leading research labs and corporate partners throughout around the world. The company’s Innovation Office focuses on connecting emerging market trends with internal technology expertise to identify opportunities, be stay ahead of the competition, and lead in new or existing technology domains.　　“At Clarivate, we aim to bring clarity to the complex. Our focus is to pore over what humanity knows today and to put forward the insight that explores all possible horizons; that enables transition and transformation. We acknowledge the Top 100 Global Innovators 2023 – companies and organizations that know that innovative ideas and solutions to current challenges not only bring rewards to their businesses but foster genuine improvements in society,” Gordon Samson, Chief Product Officer, Clarivate, said.　　This year’s report marries insights from Clarivate on inventive activity and scientific discovery to better track the flow of modern innovation—to identify the 50 research organizations most often cited by the Top 100 Global Innovators 2023. These are global institutions whose intellect underpins the design of engineered solutions.
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Release time：2023-02-17 13:55 reading：2267 Continue reading>>

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