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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

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Renesas

Release time：2025-07-04 15:04 reading：258 Continue reading>>

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Murata Launches World’s First 10µF/50Vdc MLCC in 0805-inch Size for Automotive Applications

　　Murata Manufacturing Co., Ltd. has announced the new GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is the world's first 0805-inch size (2.0 x 1.25 mm) MLCC to offer a capacitance of 10µF with a 50Vdc rating and is specifically engineered for automotive applications*. This cutting-edge product marks a significant advancement in MLCC design, delivering a smaller 0805-inch package while maintaining capacitance, voltage rating, and MLCC reliability.　　Advancements in advanced driver-assistance systems (ADAS) and autonomous driving (AD) technologies necessitate deploying an increased number of integrated circuits (ICs) within vehicle systems. This surge in ICs simultaneously leads to a greater demand for supporting high-capacitance passive components while imposing tighter spatial constraints – as a greater number of capacitors must be accommodated on increasingly crowded automotive printed circuit boards (PCBs).　　Designed for 12V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count, resulting in smaller, more efficient, and reliable automotive systems. As the first automotive-specific MLCC to achieve a 10µF capacitance with a 50Vdc rating in the compact 0805-inch size the GCM21BE71H106KE02 represents a significant advancement in capacitance efficiency. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7µF/50Vdc product, despite sharing the same physical size. Furthermore, compared to the previous 10µF/50Vdc MLCC in the larger 1206-inch size (3.2 x 1.6 mm), the new MLCC occupies approximately 53% less space, providing substantial space savings for automotive applications.　　Murata will continue to pursue further miniaturization and increased capacitance of MLCCs, while expanding its product lineup to meet the evolving needs of the automotive market. These efforts will support the industry as they look to develop higher-performance and more multifunctional vehicles. In addition, by downsizing electronic components, Murata aims to reduce material usage and improve production efficiency per unit, helping to lower electricity consumption at its manufacturing sites and reduce overall environmental impact.

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Murata

Release time：2025-07-04 13:59 reading：297 Continue reading>>

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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.

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ROHM

Release time：2025-07-03 14:52 reading：209 Continue reading>>

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GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.GD32C231 Product Portfolio　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.GD32C231 block diagram　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.GigaDevice.com　　*GigaDevice, GD32, and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.

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GigaDevice

Release time：2025-06-30 14:52 reading：293 Continue reading>>

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TAIYO YUDEN: World's First Multilayer Metal Power Inductor Capable of Withstanding Temperatures up to 165°C

　　TAIYO YUDEN CO., LTD. has commercialized four items, including the multilayer metal power inductor MCOIL™ "LACNF2012KKTR24MAB" (2.0 x 1.25 x 1.0 mm, maximum height value shown), which complies with the "AEC-Q200" reliability qualification test standard for passive automotive components. Through advancements made in our proprietary metal materials and multilayer construction methods, we have achieved an upper operating temperature limit of 165°C for a multilayer metal power inductor, a world’s first *1 .　　These products are used as choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　By extending the upper operating temperature limit range of our conventional product "LCCNF2012KKTR24MAD" (operating temperature range: -55°C to +150°C) to 165°C, these new products are able to contribute to the miniaturization and performance enhancement of power supply circuits by enabling high-density mounting in high-temperature environments such as in automobiles.　　Mass production of these products began at our subsidiary, WAKAYAMATAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan), in April 2024. Samples are available for 50 yen per unit.　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller and thinner in order to arrange devices in highly dense configurations and integrate them into single modules. Components mounted at high densities become more susceptible to the effects of heat, as their reduced volumes makes it more difficult for the heat generated by the components to dissipate. Furthermore, since ECUs are increasingly being installed in engine compartments—a high temperature environment—on-board electronic components must be able to withstand high temperatures.　　To address these challenges, TAIYO YUDEN further improved the reliability of the MCOIL™ LCCN series of multilayer metal power inductors, which had the advantage of being smaller and thinner, and launched the AEC-Q200 certified LACN series which provides an extended operating temperature range of - 55°C to +165°C.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　*1 As of May 30, 2024, according to TAIYO YUDEN study.　　■Application　　Choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　■Characteristics　　*2 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*3 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*4 The rated current is the DC current value that satisfies both of current value saturation current value and temperature rise current value.　　* Derating of rated current is necessary depending on the ambient temperature. Please see our website below for detailed specifications

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TAIYO

Release time：2025-05-30 14:21 reading：306 Continue reading>>

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ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity

　　ROHM has expanded its portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types. They are optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors.　　The demand for advanced sensing technologies utilizing near-infrared (NIR) has grown in recent years, particularly in VR/AR equipment and biosensing devices. These technologies are used in applications such as eye tracking, iris recognition, and blood flow/oxygen saturation measurements that require high accuracy. At the same time, miniaturization, energy efficiency, and design flexibility are becoming increasingly important. In industrial equipment, near-infrared LEDs are playing a greater role with the rise of precise printer control and automation systems. In response, ROHM is expanding customer options by developing a lineup of compact packages and wavelengths that offer greater design flexibility, while contributing to higher precision and power savings by achieving high radiant intensity.　　The new lineup consists of six models in three package configurations, including two ultra-compact (1.0mm × 0.6mm), ultra-thin (t=0.2mm) products as part of the PICOLED™ series: SML-P14RW and SML-P14R3W. In addition, there are four variants in the industry-standard (1.6mm × 0.8mm) size, featuring a narrow beam circular lens package (CSL0902RT, CSL0902R3T) and flat lens design that emits light over a wide range (CSL1002RT, CSL1002R3T). Each package is available in two wavelengths, 850nm (860nm for the SML-P14RW) and 940nm, allowing customers various options for their specific application needs. The 850nm wavelength is ideal for phototransistors and camera sensors, making it suitable for high-sensitivity applications such as eye tracking and object detection in VR/AR. At the same time, the 940nm wavelength is less affected by sunlight and does not appear red when emitting light, making it suitable for motion sensors. It is also widely used in biosensing applications such as pulse oximeters to measure blood flow and oxygen saturation (SpO2).　　The light source incorporates an NIR element with an optimized emission layer structure utilizing proprietary technology developed through in-house manufacturing expertise. This has made it possible to achieve industry-leading* radiant intensity in a compact package, which was previously considered difficult. For example, compared to a standard 1006 size product, the SML-P14RW delivers approx. 1.4 times the radiant intensity at the same current. In other words, the SML-P14RW consumes 30% less power to achieve the same radiation intensity. This technology improves sensing accuracy and power savings for the entire system.　　Going forward, ROHM will continue to provide innovative light source solutions that support next-generation sensing technologies, creating new value in the VR/AR and industrial equipment markets, while contributing to the realization of a sustainable society.　　Compact NIR LED Lineup　　*1:Ta=25°C *2:IF=30mA *3:IF=20mA　　ROHM also offers NIR-sensitive phototransistors.　　Application Examples　　• VR/AR licenses (eye tracking, gesture recognition)　　• Pulse oximeters (blood flow/oxygen saturation measurement)　　• Industrial optical sensors (object passage detection, position detection), self-checkout systems (bill/card detection), mobile printers (paper detection)　　• Home appliance remote controls (IR data communication), robot vacuum cleaners (floor detection)　　Terminology　　VR/AR (Virtual Reality/Augmented Reality)　　Virtual reality immerses users in a completely digital environment through small high-resolution monitors or screens within an enclosed space. Augmented reality enhances the real world by overlaying digital content onto a headset or smart glasses, enabling users to interact with 3D images. Collectively, these technologies are sometimes referred to as XR (Cross Reality or Extended Reality).　　Near-Infrared (NIR)　　Refers to light in the wavelength range of 780nm to 1000nm. Primarily used in sensors, communication and measurement applications, it is suitable for high accuracy distance measurement and recognition.　　PICOLED™ Series　　ROHM's ultra-small, ultra-thin chip LEDs designed for compact mobile devices and wearables, developed using a proprietary element manufacturing process.　　Radiant Intensity　　An index representing the strength of energy emitted by a light-emitting device in a specific direction (unit: W/sr). This is an important factor that affects the LED’s output intensity and detection performance on the receiving side.　　Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies.　　*PICOLED™ is a trademark or registered trademark of ROHM Co., Ltd.

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ROHM

Release time：2025-05-26 14:54 reading：378 Continue reading>>

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Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new high-performance microprocessor (MPU) in the RTOS-based RZ/A series that meets the growing demands of advanced human-machine interface (HMI) systems. The new RZ/A3M MPU comes with large SDRAM, SRAM and RTOS support to facilitate the seamless execution of complex tasks and real-time graphical displays. The RZ/A3M drives video and camera output on large LCD panels with resolutions up to 1280x800, addressing the display requirements in next-generation home appliances, industrial and office automation, healthcare devices and building control systems.　　Similar to its existing RZ/A3UL, the RZ/A3M features a 64-bit Arm® Cortex®-A55 core with a maximum operating frequency of 1 GHz and 128 KB (kilobytes) of on-chip SRAM. By integrating high-speed 128MB DDR3L-SDRAM in a single System-in-Package (SiP), the device eliminates the complex task of designing a high-speed signal interface for connecting external memory.　　Reducing System Cost with Built-in Memory and Simplified PCB Design　　The RZ/A3M is designed to reduce system costs and accelerate development. It supports both external NAND and NOR flash via QSPI for data and code storage. Paired with a driver, high-capacity NAND flash offers a cost-effective option for memory expansion. Additionally, the RZ/A3M's BGA package has a unique pin layout with two main rows positioned on the outside edge. This layout simplifies PCB routing and enables a low-cost, dual-layer printed wiring board design, providing significant cost and time savings. This memory integration simplifies PCB design by reducing the routing complexity and minimizing layout constraints.　　“I’m pleased to launch the RZ/A3M, the first RZ product with large built-in memory targeting high-function video/animation HMI performance while keeping overall system costs low,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “In addition, we aim to deliver a highly responsive user experience with high-quality, real-time graphics, and provide the ease of design and cost efficiency to help our customers build advanced HMI solutions quickly.”　　Comprehensive Development Environment　　Renesas offers a comprehensive HMI development environment that includes the Flexible Software Package (FSP), evaluation kits, development tools, and sample software. Graphical user interface (GUI) solutions from partner companies such as LVGL, Crank, SquareLine Studio, and Envox will be available for the RZ/A3M to facilitate rapid HMI graphics development.　　Key Features of RZ/A3M　　Arm Cortex-A55 CPU with a maximum operating frequency of 1GHz　　128KB SRAM with error correction, Built-in 128MB DDR3L SDRAM　　Graphics capabilities: LCD controller supporting resolutions up to 1280x800 (WXGA), parallel RGB and MIPI-DSI (4-lane) interfaces, 2D graphics drawing engine　　Peripheral functions: QSPI interface for serial NOR/NAND flash memory, SPI, I2C, SDHI, USB2.0, I2S, temperature sensor, timer　　Package: 244-pin LFBGA, 17mm x 17mm, 0.8mm pitch　　Renesas’ Comprehensive HMI Solutions　　Renesas offers a wide variety of HMI solutions ranging from the 32-bit RX and RA MCU families to the 64-bit RZ family supporting 4K displays. The RZ/A series, built on RTOS-based MPUs with fast startup, includes the new RZ/A3M, which delivers high-performance HMI capabilities with the same ease of use offered by MCUs using large memory capacity.　　Multi-HMI Winning Combination　　Renesas offers Multi-HMI Solution which combines the new RZ/A3M MPU with numerous compatible devices from its portfolio to offer HMI functions for appliances. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.

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Renesas

Release time：2025-05-26 14:49 reading：422 Continue reading>>

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GigaDevice Launches New EtherCAT® SubDevice Controller Chip An Excellent Choice for Industrial Automation

　　GigaDevice (Stock Code: 603986), a leading semiconductor supplier, announced today the official launch of its EtherCAT® SubDevice Controller chip.　　GigaDevice has received official authorization from Beckhoff and launched its first EtherCAT® SubDevice Controller, GDSCN832, along with the ultra-high performance industrial automation MCU series GD32H75E, which incorporates the EtherCAT® SubDevice Controller. These new products are tailored to meet the demands of the industrial automation market, providing optimal solutions for applications such as servo control, variable frequency drives, industrial PLCs, and communication modules, thanks to their exceptional processing power and extensive interface resources. Samples and development boards are now available, with mass production scheduled for 2nd quarter of 2025.　　GigaDevice EtherCAT® SubDevice Controller Chip　　EtherCAT® SubDevice Controller: Achieving Ultra-Fast Response Time　　The GDSCN832 series is a 2/3-port EtherCAT® SubDevice Controller integrating two internal PHYs and one MII extension interface. It has a dual-channel integrated Ethernet physical layer device, with each channel offering a full-duplex 100BASE-TX transceiver supporting 100 Mbps operation. This series supports eight Fieldbus Memory Management Units (FMMU), enhancing data processing performance and security while effectively reducing memory access latency to improve system response time and real-time performance, providing users with high flexibility in data mapping. Additionally, it supports eight Sync Manager entities for efficient memory management.　　The GDSCN832 series includes up to 8 KB of Dual-Port RAM (DPRAM), facilitating large data processing capabilities for complex control systems. It incorporates a 64-bit distributed clock with a host bus interface that achieves equivalent functionality through high-speed synchronous/asynchronous device interfaces, with a precision below 1 µs. This product series supports 8/16-bit serial/parallel port communication, SPI/QSPI/OSPI device interfaces with communication speeds up to 100 MHz, and EXMC synchronous mode. Its diverse interface options provide users with greater flexibility in interface configuration. An integrated 1.1V core regulator supports operation with a single 3.3V power supply and allows for variable voltage I/O from 1.8V to 3.3V. The GDSCN832 supports HP Auto-MDIX, enabling direct or crossover LAN cable connections. Four low-power modes are available to balance energy efficiency and power consumption.　　With its high integration, flexibility, and stability, the GDSCN832 is ideal for applications such as motor motion control, data acquisition, industrial automation, communication modules, and sensors. The series comes in a compact QFN64 package, along with a development and evaluation board, providing a cost-effective EtherCAT® SubDevice Controller device solution for developers.　　GD32H75E Series EtherCAT® Industrial Automation MCUs: Combining Superior Control and Efficient Communication Capabilities　　GigaDevice has launched the GD32H75E series, its first high-performance MCU product authorized by Beckhoff to integrate the EtherCAT® SubDevice Controller. Combining the GDSCN832 series chip with a high-performance MCU, this product offers a seamless solution for diverse industrial automation applications, including servo motor control, variable frequency drives, industrial PLCs, and communication modules.　　Building on the exceptional features of the GD32H7 series, the GD32H75E series uses an Arm® Cortex®-M7 high-performance core with a frequency of up to 600 MHz. It includes an advanced DSP hardware accelerator, a double-precision floating-point unit (FPU), a hardware trigonometric accelerator (TMU), and a filter algorithm accelerator (FAC). The series offers on-chip Flash memory ranging from 1024 KB to 3840 KB and 1024 KB of SRAM, with 512 KB configurable tightly coupled memory (ITCM, DTCM) for zero-wait execution of critical instructions and data. All Flash and SRAM regions support ECC verification, enhancing system reliability. Additionally, it features a 64 KB L1-Cache (I-Cache, D-Cache) to further improve CPU efficiency and real-time performance.　　The GD32H75E provides a wealth of peripheral resources, including 8 USARTs, 4 I2Cs, 6 SPIs, 4 I2S, and an 8-line OSPI (backward compatible with 4-line QSPI). It supports 2 USB 2.0 OTG interfaces with Full Speed and High Speed modes and includes 3 CAN-FD controllers. The series also features four 32-bit general-purpose timers, twelve 16-bit general-purpose timers, four 64-bit/32-bit basic timers, and two advanced PWM timers. Two 14-bit ADCs provide sampling rates up to 4 MSPS, with one 12-bit ADC reaching 5.3 MSPS, along with a fast comparator (COMP) and DAC for high-precision analog functions. A high-performance digital filter module (HPDF) for external Σ-Δ modulators and an encoder divide output controller (EDOUT) are also integrated, making it ideal for high-precision motion control systems.

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GigaDevice

Release time：2025-05-21 16:53 reading：450 Continue reading>>

Trade news

GigaDevice launches the GD32G5 series high-performance MCUs with Cortex®-M33 core, unleashing innovation potential in industrial applications

　　GigaDevice (Stock Code: 603986), a leading semiconductor supplier, today officially announced the launch of the GD32G5 series high-performance microcontrollers, based on the Arm® Cortex®-M33 core.　　The GD32G5 series MCUs, featuring exceptional processing performance, a wide range of digital and analog interface resources, and enhanced security capabilities, can be widely applied across diverse scenarios such as digital power systems, charging stations, energy storage inverters, frequency converters, servo motors, and optical communication. This new product lineup offers 14 models across 7 package types, including LQFP, QFN, and WLCSP. 　　Powerful Performance Empowering the Industrial Market　　The GD32G5 series MCUs are powered by the high-performance Arm® Cortex®-M33 core, with a clock frequency of up to 216 MHz. These MCUs feature an advanced DSP hardware accelerator and a single-precision floating-point unit (FPU). They also integrate a hardware trigonometric function accelerator (TMU), supporting 10 types of function calculations, along with various other hardware acceleration units, including filter algorithms (FAC) and Fast Fourier Transform (FFT), which significantly enhance processing efficiency. At maximum frequency, the GD32G5 series MCUs deliver performance of up to 316 DMIPS, achieving an impressive CoreMark® score of 694.　　The GD32G5 series MCUs are equipped with 256KB to 512KB of embedded Flash memory, supporting the dual-bank Flash feature, and 128KB of SRAM, which includes 32KB Tightly Coupled Memory RAM (TCMRAM) for zero-wait execution of critical instructions and data. Additionally, they feature high-speed cache memory, with up to 2KB I-Cache and 512B D-Cache, further boosting core processing performance.　　Extensive Peripherals Enable Development Innovation　　The GD32G5 series MCUs integrate a comprehensive range of peripheral resources. They support four 12-bit ADCs with a sampling rate of up to 5.3 MSPS and up to 42 channels, as well as four 12-bit DACs, two of which offer sampling rates as high as 15 MSPS. Additionally, the series includes eight high-speed comparators (COMPs) and a suite of high-precision analog peripherals designed to meet the demands of motor and power control applications. The GD32G5 series also features a 16-channel high-precision timer (HRTimer) with accuracy reaching 145 ps, along with three advanced 8-channel timers, two 32-bit general-purpose timers, five 16-bit general-purpose timers, two 16-bit basic timers, and one low-power timer.　　In terms of communication interfaces, the GD32G5 series offers five U(S)ARTs, four I2Cs, three SPIs, and one QSPI supporting up to 200 MHz DDR/SDR interfaces. The MCUs are equipped with three CAN-FD modules, ideal for high-speed communication applications. Additionally, they integrate one HPDF (high-performance digital filter) supporting 8 channels and 4 filters, with external Σ-Δ modulator support. The series also includes four configurable logic modules (CLAs) and the Trigsel module, which allows flexible configuration of trigger sources. Designed to operate in a wide temperature range from -40°C to 105°C, the GD32G5 series is well-suited for demanding applications such as optical modules, industrial power supplies, and high-speed motor control, where stringent temperature requirements must be met.

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GigaDevice

Release time：2025-05-21 16:47 reading：449 Continue reading>>

Trade news

EMC components: TDK offers multilayer chip beads with the industry's highest rated current of 8 A for power supply lines

　　TDK Corporation (TSE: 6762) has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm – L x W x H). Mass production of the product series began in May 2025.　　These 1608-size chip beads for power supply lines achieve a rated current of 8 A, the industry’s highest value*. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. TDK’s new product simplifies the circuit structure because fewer components are required compared to conventional methods, and it improves the quality of power circuits.　　The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the highly reliable components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.　　With TDK’s proprietary materials and structural designs adapted to market needs, the company is committed to expanding its lineup of high rated current products in the automotive, industrial equipment, and consumer equipment areas. These chip beads will serve as EMC components contributing to the enhancement of the quality of power circuits.　　Glossary　　EMC: electromagnetic compatibility　　Main applications　　Power circuit for different pieces of equipment: in-vehicle ECUs, power train, vehicle body control, automotive multimedia (telematics), base stations, PCs, servers, set-top box, smart grids, robots, smartphones, tablet devices, etc.　　Main features and benefits　　Compatible with large currents as high as 8 A　　Reduces components and footprint　　Highly reliable; can be used in high-temperature environments like automotive applications　　Key data

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TDK

Release time：2025-05-16 13:45 reading：360 Continue reading>>

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