<span style='color:red'>ROHM</span> has Developed New Smart Switches Optimized for Zonal Controllers
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ROHM has Developed New Smart Switches Optimized for Zonal Controllers

　　ROHM has developed six new high-side Smart Switches (Intelligent Power Devices, short: IPDs) BV1HBxxxEFJ series (BV1HB008EFJ-C, BV1HB012EFJ-C, BV1HB020EFJ-C, BV1HB040EFJ-C, BV1HB090EFJ-C, BV1HB180EFJ-C) with highly accurate current sensing capability and ON resistances from 9 mΩ to 180 mΩ. They are ideal for protecting loads and subsystems from abnormalities such as overcurrent, overvoltage, and overtemperature, ensuring reliable operation and safeguarding sensitive components in automotive lighting, body control such as, door locks and power windows. Extensive diagnostic capabilities, e.g., open load and reverse battery detection, further enhances safety and reliability.　　Vehicle electronic control systems are becoming increasingly sophisticated with the advancement of autonomous driving and electric vehicles (EVs). This evolution has heightened the importance of electronic protection from a functional safety standpoint, driving the shift toward Zonal Controllers architecture that manages vehicle functions in designated zones. As a result, the use of smart switches for electronic load protection and control is rapidly growing.　　Zonal controllers must each manage a large number of loads, but conventional smart switches often lack the drive capability required for high-capacitance loads. ROHM’s new smart switches address this challenge, delivering key performance attributes such as low ON resistance and high inductive energy clamp while significantly improving capacitive load drive capability. By commercializing high-performance smart switches tailored to zonal controllers’ requirements, ROHM is contributing to automotive electrification and the elimination of mechanical fuses.　　The new products feature exceptional high-capacitance load driving capability, maximizing performance at the critical interface between Zonal Controllers and output loads (including various ECUs). Leveraging proprietary cutting-edge process technology makes it possible to achieve both low ON resistance and high inductive energy clamp – two characteristics typically involve a trade-off. The result is a well-balanced integration of three key performance metrics: drive capability, ON resistance, and energy tolerance. This enhances system design safety, efficiency, and reliability. The devices also incorporate a best-in-class* high-precision current sensing function (±5%) that provides effective protection for harnesses connected to output loads. At the same time, the compact, high heat dissipation HTSOP-J8 package ensures excellent design versatility.　　Going forward, ROHM remains committed to improving safety, security, and energy efficiency in the automotive field by continuing to develop high reliability, high performance devices.　　*ROHM study on high-side Smart Switches - September 30th, 2025　　Application Examples　　Body applications, powertrain/inverter systems, other switch-related circuits　　Terminology　　Zonal Controllers　　An emerging design concept in automotive electronic architecture, zonal controllers represent a shift away from the conventional approach of assigning dedicated ECUs for each function, such as lighting, door locks, and power windows. Instead, the vehicle is divided into zones, with a zonal controller manages multiple functions in its zone.　　Intelligent Power Devices (IPD) / Smart Switches　　Smart power switches are semiconductor devices that electronically control the delivery of power by turning it on and off, while also providing integrated protection and diagnostic features such as overcurrent, overvoltage, thermal shutdown, current sensing, and open load detection to enhance system reliability and safety.　　Capacitive Load Driving Capability　　A technical term referring to the ability of an electronic circuit or semiconductor device to operate reliably when driving capacitive loads. It is especially important in circuit configurations involving zone ECUs and their output stages (including individual ECUs) where large electrolytic capacitors are commonly used. If this capability is inefficient, inrush current cannot be adequately suppressed, leading to overheating that can result in malfunctions or reduced operational lifespan.
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Release time：2025-09-30 16:29 reading：251 Continue reading>>
<span style='color:red'>ROHM</span> and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers
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ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
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Release time：2025-09-29 14:53 reading：312 Continue reading>>
<span style='color:red'>ROHM</span> Launches 2-in-1 SiC Molded Module “DOT-247”
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ROHM Launches 2-in-1 SiC Molded Module “DOT-247”

　　ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), ideal for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the widely adopted "TO-247" package while achieving high design flexibility and power density.　　The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package, and achieves low on-resistance through an unique internal structure. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15% and inductance by approximately 50% compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration –achieving the same power conversion circuit in approximately half the volume.　　The new products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed –making custom products necessary in many cases when using conventional SiC modules.　　To address this challenge, ROHM has developed each of these two topologies—the smallest building blocks of multi-level circuits—into a 2-in-1 module. This enables flexibility to support various configurations such as NPC circuits and DC-DC converters, while significantly reducing the number of components and mounting area, and achieving circuit miniaturization compared to discrete components.　　Evaluation boards will also be made available progressively to facilitate evaluation during application design. For more information, please contact a sales representative or visit the contact page on ROHM’s website.　　Product Lineup　　☆:Under Development　　AEC-Q101 is an automotive electronics reliability standard established by the Automotive Electronics Council (AEC).　　The Q101 standard is specifically focused on discrete semiconductor components.　　Application Examples　　PV inverters, semiconductor relays, UPS (uninterruptible power supply), ePTO, and boost converters for FCVs (fuel cell vehicles).　　AI servers (eFuse), EV charging stations, etc.　　Sales Information　　Pricing: $140/unit (samples, excluding tax)　　Availability: ROHM construct mass production (September 2025)　　Products compliant with the automotive reliability standard AEC-Q101 are scheduled to begin sample shipments in October 2025.　　Comprehensive Support　　ROHM is committed to providing application-level support, including the use of in-house motor testing equipment. A variety of supporting materials are also offered, such as simulations and thermal designs that enable quick evaluation and adoption of DOT-247 products. An evaluation kit for double-pulse testing is already available, allowing immediate testing, while an evaluation kit for 3-phase inverters is currently under preparation, with reference designs scheduled to be released from November 2025.　　• About the DOT-247 design models　　SPICE models: Available on the product web pages for each part number　　LTspice® models: Scheduled to be available for three-level NPC from October 2025 on the web pagesLTspice® is a registered trademark of Analog Devices, Inc.When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder.　　For details, please contact a sales representative or visit the contact page on ROHM’s website.　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Half-bridge/ Common-source　　A basic configuration of a power conversion circuit consisting of two MOSFETs. In a half-bridge configuration, the MOSFETs are connected in series, one above the other, and the output is taken from the connection point. By switching the upper and lower MOSFETs alternately, the output voltage can be switched between positive and negative, making this configuration widely used as the basic structure for high-efficiency power conversion in inverters and motor drive circuits.　　Common Source is a configuration where the source terminals of the two MOSFETs are connected, and the output is taken from each drain. By grouping the source terminals, the gate drive circuit can be simplified, making it suitable for applications such as multilevel inverters.　　Types of NPC-type multi-level circuits　　NPC (Neutral Point Clamped) is a multi-level circuit configuration that divides the output voltage into three levels (+, 0, and -) to reduce voltage stress on the switching devices. The "0V" state is created by the neutral point, which is the contact point located between the positive and negative voltages.　　T-NPC (T-type NPC) replaces the diode used to stabilize the neutral point with switching devices such as MOSFETs, enabling more efficient operation. ANPC (Active NPC) actively controls the potential of the neutral point itself using a switch, achieving smoother output waveforms and high-precision power conversion. T-NPC and ANPC are suitable for applications requiring higher output and efficiency.　　ePTO (electric Power Take-Off)　　A system that uses the power from an electric vehicle's motor or battery to drive external work machinery or equipment (such as hydraulic pumps or compressors). This is an electrified version of the PTO (Power Take-Off) used in conventional engine vehicles, and its adoption is advancing in environmentally friendly commercial vehicles and work vehicles.
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Release time：2025-09-17 13:11 reading：394 Continue reading>>
<span style='color:red'>ROHM</span> has Developed Ultra-Compact CMOS Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current
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ROHM has Developed Ultra-Compact CMOS Op Amp: Delivering Industry-Leading* Ultra-Low Circuit Current

　　ROHM’s ultra-compact CMOS Operational Amplifier (op amp) TLR1901GXZ achieves the industry’s lowest operating circuit current. This IC is optimized to be applied as a measurement sensing amplifier in size-constrained applications such as handheld measurement instruments, wearable devices, and indoor motion detectors.　　As the demand continues to grow for more sophisticated control in battery-driven devices, the importance of sensors that detect parameters such as temperature, humidity, vibration, pressure, and flow rate – along with the op amps used to amplify these sensor signals – continues to rise. At the same time, greater miniaturization and energy savings in applications is a necessary step to realizing a sustainable society –placing similar demands on individual devices as well.　　In response to these evolving market needs, ROHM has advanced its process, packaging, and proprietary Nano Energy™ circuit technologies to develop an op amp that addresses three key requirements: lower power consumption, higher accuracy, and compact size. The newly developed TLR1901GXZ achieves an ultra-compact footprint of less than 1mm2 by adopting a WLCSP (Wafer Level Chip Scale Package) with a fine ball pitch of 0.35mm while delivering an industry-leading low operating current of 160nA (typ.). This not only contributes to high-density mounting in space-constrained applications, but also to a significantly extended battery life.　　Moreover, the TLR1901GXZ features an exceptionally low input offset voltage of just 0.55mV (max.), one of the best among ultra-low current op amps. This represents an approximate 45% reduction compared to typical products on the market. A maximum input offset voltage temperature drift of 7uV/°C ensures high accuracy operation over the operating temperature range.　　Design flexibility can be further enhanced by pairing the op amp with ROHM’s ultra-compact general-purpose resistors, such as the MCR004 (0402 metric / 01005 inch) and MCR006 (0603 metric / 0201 inch), for applications like gain adjustment. The MCR004 series lineup includes the MCR004E –an environmentally friendly, fully lead-free option designed to support sustainable designs. Adapter boards featuring SSOP5 package ICs are offered as well to support initial evaluation and replacement assessments.　　Going forward, ROHM will continue to pursue further power savings in op amps by advancing both miniaturization and original ultra-low power technologies. At the same time, we are committed to improving device performance by reducing noise and offset, expanding power supply voltage ranges, and contributing to solving social issues through more precise application control.　　Key Product Characteristics　　Application Examples　　• Consumer devices: wearables, smart devices, motion sensors, etc.　　• Industrial equipment: gas detectors, fire alarms, handheld measurement instruments, environmental sensors for IoT, etc.　　Online Sales Information　　Sales Launch Date: Now　　Pricing: $2.1/unit (samples, excluding tax)　　Online Distributors: AMEYA360　　• Applicable Part No: TLR1901GXZ-E2　　• IC-Mounted Adapter Board: TLR1901GXZ-EVK-001　　What is Nano Energy™ Technology?　　Nano Energy™ refers to proprietary ultra-low current consumption technology that achieves a current consumption on the order of nano ampere (nA) by combining advanced analog technologies covering circuit design, layout, and processes utilizing ROHM’s vertically integrated production system.　　This contributes not only to extending operating time of battery operated IoT and mobile devices, but also improving efficiency in industrial and automotive equipment where increased power consumption is problematic.　　https://www.rohm.com/support/nano 　　Nano Energy™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from wafers and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　Input Offset Voltage　　The small voltage difference that must be applied between the inverting and non-inverting inputs of the operational amplifier to make the output voltage exactly zero.　　Input Offset Voltage Temperature Drift　　Refers to how much an op amp's input offset voltage changes as the temperature changes.
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Release time：2025-09-12 17:23 reading：424 Continue reading>>
<span style='color:red'>ROHM</span>’s SiC MOSFETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production
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ROHM’s SiC MOSFETs Adopted in Schaeffler’s Inverter Brick, Now in Mass Production

　　ROHM and Schaeffler, a leading German automotive supplier, have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer.High voltage inverter brickSiC MOS Wafer　　The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack.　　“Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness,” says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.　　Modularity and scalability as the key to easy integration　　As a core component of an inverter, a brick has to meet strict requirements. The characteristics of the sub-module are indicative of the factors behind the current sales success and start of volume production: ROHM’s silicon carbide (SiC) power semiconductors enable the frame-mounted sub-module with high power density to be compact, efficient, and readily integrated into various inverters through its modular and scalable design. The sub-module incorporates the power module for pulse width modulation (PWM) of the current pulses, the DC link capacitor, a DC link and a cooler. Moreover, the brick has a DC boost function, thanks to which a vehicle with 800 V architecture can also be charged at a 400 V charging station at a charging speed of 800 V.　　“We are glad about the launch of volume production for Schaeffler’s inverter brick with our 4th generation SiC MOSFET,” says Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM. “With our SiC technology we are making a substantial contribution to increasing the efficiency and performance of electric cars. Working with Schaeffler as our partner, we are thus fostering innovation and sustainability in the automotive industry,” Dr. Ino adds.　　The strategic partnership of Schaeffler (originally initiated under Vitesco Technologies) with ROHM has existed since 2020 and serves to secure capacity for energy-efficient SiC power semiconductors.Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　About Schaeffler Group　　The Schaeffler Group has been driving forward groundbreaking inventions and developments in the field of motion technology for more than 75 years. With innovative technologies, products and services for electric mobility, CO₂-efficient drives, chassis solutions and renewable energies, the company is a reliable partner for making motion more efficient, intelligent and sustainable – over the entire life cycle. Schaeffler describes its comprehensive range of products and services in the mobility ecosystem by means of eight product families, from bearing solutions and linear guidance systems of all kinds to repair and monitoring services. With around 120,000 employees at more than 250 locations in 55 countries, Schaeffler is one of the world’s largest family-owned companies and ranks among Germany’s most innovative companies.
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Release time：2025-09-05 16:57 reading：491 Continue reading>>
<span style='color:red'>ROHM</span> at electronica India 2025: Power and Analog Devices Contributing to the Evolution of Industrial and E-Mobility applications
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ROHM at electronica India 2025: Power and Analog Devices Contributing to the Evolution of Industrial and E-Mobility applications

　　From September 17th to 19th, ROHM will exhibit at electronica India 2025, South Asia's leading trade fair for electronic components, systems, applications, and solutions, taking place at the Bangalore International Exhibition Centre (BIEC). At booth H3-E25, ROHM will showcase its latest SiC and GaN technologies, featuring reference designs and evaluation systems that address today’s power and thermal challenges in both industrial equipment and automotive drive systems. Additionally, we will also showcase analog solutions such as power ICs for industrial equipment and automotive LED drivers.　　"electronica India 2025 will be the right place to explore real-world applications powered by ROHM’s advanced power semiconductors. With our local design expertise and close cooperation with key players in the Indian market, we are uniquely positioned to support the country’s shift toward more sustainable and efficient electronics," says Makoto Terada, Managing Director, ROHM Semiconductor India.　　Highlights of ROHM’s presence at electronica India 2025 include:　　For Industrial Applications　　・Locally co-developed reference designs, as part of ROHM’s 'Made in India' initiative, emphasizing faster prototyping and region-specific design optimization, which will be unveiled for the first time.　　・A full lineup of GaN reference designs ranging from 45W to 5.5kW, including compact AC adapters, Totem Pole PFC designs, and server power supplies.　　・ROHM’s 2kV SiC MOSFETs, adopted in SEMITRANS® 20 modules by Semikron Danfoss, powering SMA Solar Technology’s Sunny Central FLEX for utility-scale PV and battery systems.　　* SEMITRANS® is a trademark or registered trademark of Semikron Danfoss Elektronik GmbH　　For Automotive and E-Mobility　　・TRCDRIVE pack™, a molded SiC module designed for the traction inverter of EVs.　　・New 2-in-1, 4-in-1 and 6-in-1 molded SiC modules for compact and cost-optimized drive solutions.　　・TO-247 discrete SiC MOSFETs shown through practical 3-phase inverter boards for affordable traction systems.　　More Information　　For additional highlights of ROHM at electronica India 2025, please visit:　　www.rohm.com/electronica-india　　ROHM’s Power Eco Family: Reliable Solutions Across a Wide range of Applications　　ROHM will also feature its Power Eco Family, a branding concept that unites its key power device lines: Each product line will be represented through live demonstrations, adoption cases, and hands-on evaluation tools available at the booth.
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Release time：2025-09-01 15:11 reading：534 Continue reading>>
<span style='color:red'>ROHM</span> Releases a New Compact PFC + Flyback Control Reference Design for Power
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ROHM Releases a New Compact PFC + Flyback Control Reference Design for Power

　　ROHM’s new reference design (REF67004) is capable of controlling two commonly used power converter types in consumer and industrial power supply applications by using a single MCU :critical conduction mode PFC (Power Factor Correction) and quasi-resonant flyback. This is part of ROHM’s LogiCoA™ Power Supply Solution, that leverages analog-digital hybrid control technology. It combines an analog-controlled power stage circuit featuring ROHM’s superior silicon MOSFETs and gate driver ICs with a digitally managed power supply circuit built around the low-power LogiCoA™ MCU.　　Analog-controlled power supplies are widely used in small- to medium-power industrial applications, such as industrial robots and semiconductor manufacturing equipment. However, growing demands for higher reliability and more precise control have made it increasingly difficult for analog-only configurations to meet market expectations. On the other hand, while fully digital power supplies offer fine control and greater flexibility, their adoption in the small to medium power range has been limited due to the high cost and power consumption of digital controllers.　　To overcome these challenges, ROHM has developed the LogiCoA™ Power Supply Solution, a hybrid approach that integrates the advantages of both analog and digital control. Combined with ROHM’s high-performance, the low power LogiCoA™ MCUs enable easy control of various power topologies. As the first step, ROHM has released the REF66009 evaluation reference design, allowing users to explore the LogiCoA™ Power Supply Solution using a non-isolated buck converter circuit. This was followed by the launch of the REF67004, a reference design incorporating both PFC and flyback converters – topologies commonly used in consumer and industrial equipment.　　The newly introduced REF67004 is a reference design that boosts AC input using a Critical Conduction Mode PFC converter, followed by a Quasi-Resonant Flyback converter to deliver a regulated DC 24V output. Features include a calibration function that compensates for variations in the external component characteristics, enabling the LogiCoA™ MCU to perform high-precision voltage configuration and overcurrent protection. This allows for reduced design margins, making it possible to select more compact (low power) power devices and inductors, ultimately helping to minimize PCB area and lower overall system costs.　　The REF67004 also includes a logging function that allows the LogiCoA™ MCU to store operational data, such as input/output voltage, current, temperature, pre-shutdown system status, and cumulative operating time, in its built-in non-volatile memory. This data can be analyzed to easily identify the root cause of power supply failures. On top, various power control parameters and operational history can be easily configured and retrieved from a PC via UART (with a signal conversion device) using sample programs, including the RMOS (Real-time Micro Operating System) power control OS, available on ROHM's website. Practical evaluation is possible through the use of the reference design board LogiCoA003-EVK-001. Going forward, ROHM will continue to provide a variety of power supply reference designs to support and accelerate customer power supply development.　　LogiCoA™ Brand　　LogiCoA™ is a brand that embodies a design philosophy of fusing digital elements to maximize the performance of analog circuits. By combining the advantages of analog circuitry with those of digital control, it is possible to maximize the potential of circuit topologies, contributing to more efficient power utilization. As LogiCoA™ is a design concept that can be applied not only to the power supply field, but also to power solutions as a whole, ROHM is considering its application in future products and solutions.　　・LogiCoA™ is a trademark or registered trademark of ROHM Co., Ltd.　　LogiCoA™ Power Supply Solution Page　　The basic architecture and key features of the LogiCoA™ Power Supply Solution are available on ROHM’s website.　　https://www.rohm.com/support/logicoa　　LogiCoA™ Power Supply Solution Reference Design Lineup　　In addition to sample software, a variety of tools necessary for evaluation, such as circuit diagrams, PCB layouts, parts lists, and support documents are available on ROHM’s website, while actual device evaluation is also possible using the reference design board. Going forward, ROHM will continue to expand its lineup of reference designs to support a wide range of power topologies.　　● Reference Design Part No.　　• PFC + Flyback Converter: REF67004　　• Buck Converter: REF66009　　LogiCoA™ MCU  Lineup　　Key features include a built-in 3ch analog comparator that can be synchronized with timers, along with a D/A converter that enables digital control of various parameters to support different power supply topologies.　　LogiCoA™ MCU Development Support System　　Built on a ROHM’s proprietary 16bit RISC CPU core, LogiCoA™ MCUs are fully supported by a dedicated integrated development environment and emulator tools.　　For more information on the LogiCoA™ development support system and a product overviews, please visit ROHM’s LogiCoA™ MCU development system support page (link below).　　https://www.rohm.com/lapis-tech/product/micon/logicoa-software　　Online Sales Information　　Reference design boards, reference board and LogiCoA™ MCUs are available for purchase through online distributors such as AMEYA360.　　• Reference Design Board P/N:　　LogiCoA003-EVK-001*, LogiCoA001-EVK-001　　• Reference Board P/N:　　RB-D62Q2035TD20, RB-D62Q2045GD24　　• LogiCoA™ MCU P/N:　　ML62Q2035-NNNTDZWATZ, ML62Q2045-NNNGDZW5BY　　Pricing : $677/unit (samples for LogiCoA003- EVK-001, excluding tax)　　Application Examples　　• Industrial robots　• Semiconductor manufacturing equipment　• Gaming devices　　The LogiCoA™ Power Supply Solution is also suitable for integration into general industrial equipment and consumer devices with power requirements ranging from approximately 50W to 1kW.　　Terminology　　Critical Conduction Mode PFC (Power Factor Correction) Converter　　A configuration used in AC-DC converters within switching power supplies, Critical Conduction Mode PFC offers a high-power factor (indicating efficient utilization of supplied power) while generating less noise compared to Continuous Conduction Mode PFC. A power factor of ‘1’ signifies that all supplied power is being effectively used without waste.　　Quasi-Resonant Flyback Converter　　A DC-DC converter topology commonly used in isolated power supply designs, these converters leverage a quasi-resonant control technique to minimize switching losses and noise. Ideal for applications up to 100W, it offers advantages in terms of reduced component count and cost. While other forward-type topologies exist, advancements in the components used in these designs have led to smaller, more efficient isolated power supply solutions.　　Analog Control Power Supply　　A power supply configuration built with analog components, commonly used for applications up to 1kW due to its simplicity and low power consumption. However, implementing advanced features such as customizable parameter settings and data logging is challenging with analog control alone, often requiring fully digital solutions that tend to increase both cost and power consumption.　　Digital Control Power Supply　　A power supply is managed using digital technology. High-speed CPUs and DSPs are used to precisely monitor and control key parameters such as voltage and current, improving power supply efficiency and reliability. Digital control also enables advanced functions, such as operation log data acquisition, that are difficult to implement with analog control alone. However, CPUs and DSPs tend to be expensive and consume significant power, posing challenges in terms of cost effectiveness and energy efficiency.　　• CPU (Central Processing Unit): The core processor responsible for executing programs and performing data processing.　　• DSP (Digital Signal Processor): A processor that converts analog signals into digital form and performs operations such as filtering and amplification.　　Topology　　Refers to the circuit configuration. Power topology defines how electrical energy is transformed and managed within a circuit. The specific configuration depends on factors such as input and output voltage levels, power requirements, and whether electrical isolation is necessary.
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Release time：2025-08-25 14:24 reading：520 Continue reading>>
<span style='color:red'>ROHM</span> Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed
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ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

　　ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.　　Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.　　The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.　　As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.　　The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages　　Related Information　　• White Papers　　• Design Model Support Page　　• SiC MOSFET Technical Documentation　　Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.
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Release time：2025-07-10 13:36 reading：465 Continue reading>>
<span style='color:red'>ROHM</span> Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：494 Continue reading>>
<span style='color:red'>ROHM</span> Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time：2025-07-03 14:52 reading：458 Continue reading>>

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