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ROHM’s New TVS <span style='color:red'>Diodes</span>: Supporting High-Speed CAN FD In-Vehicle Communication Systems for Autonomous Driving

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ROHM’s New TVS Diodes: Supporting High-Speed CAN FD In-Vehicle Communication Systems for Autonomous Driving

　　ROHM has developed bidirectional TVS (ESD protection) diodes compatible with CAN FD (CAN with Flexible Data rate) high-speed in-vehicle communication. Such protocols are seeing an increased demand in line with the ongoing advancement in autonomous driving and advanced driver assistance systems (ADAS). CAN FD is a crucial communication technology for safe, real-time data transmission between ECUs (Electronic Control Units) in vehicles. The new products achieve high-quality in-vehicle transmission by protecting electronic devices such as ECUs from surges and electrostatic discharge (ESD) while maintaining signal integrity in high-speed communication systems such as CAN FD.　　The rapid evolution of autonomous driving technology and ADAS is boosting the demand for faster, more reliable automotive communication. Autonomous driving in particular requires quick and accurate processing of vast amounts of data from sensors such as cameras, LiDAR and radar - leading to the adoption of CAN FD that enables faster, higher capacity data transfer compared to traditional CAN used in automotive communication.　　At the same time, to achieve high-speed in-vehicle communication, it is necessary to ensure stable transmission even under harsh environments. This has led to a growing demand for protection components that offer low terminal capacitance along with superior surge current rating and clamping voltage performance. As a result, the market for TVS diodes for automotive communication is expected to continue to grow in the future.　　To meet market needs, ROHM developed the ESDCANxx series that combines low terminal capacitance with excellent surge tolerance. Two package types are available: SOT-23 (2.9mm × 2.4mm) and DFN1010 (1.0mm × 1.0mm), both supporting standoff voltages (VRWM) of 24V and 27V. The SOT-23 package includes four models: 24V ESDCAN24HPY / ESDCAN24HXY and 27V ESDCAN27HPY / ESDCAN27HXY. Similarly, the DFN1010 package is also offered in four models: 24V ESDCAN24YPA / ESDCAN24YXA and 27V ESDCAN27YPA / ESDCAN27YXA, totaling 8 products in the lineup.　　The new products feature an optimized element structure that reduces terminal capacitance to a maximum of 3.5pF, preventing signal degradation during high-speed communication. High surge tolerance is also achieved, significantly improving the protection of electronic devices in automotive environments. For example, the 27V products of the DFN1010 package delivers approx. 3.2 times higher surge current rating and 16% lower clamping voltage compared to standard CAN FD-compatible products. This effectively safeguards expensive surge-sensitive electronic devices such as in-vehicle ECUs, ensuring high reliability even under harsh automotive environments. Going forward, ROHM will continue to develop products that support even faster in-vehicle communication in autonomous driving and communication environments - contributing to realizing a safer, more advanced mobility society.　　Application Examples • Autonomous driving and Advanced Driver Assistance Systems (ADAS)　　• Automotive electric powertrain systems　　• In-vehicle infotainment systems　　Online Distributor Information Sales Launch Date: December 2024　　Pricing: $0.9/unit (excluding tax)　　Target Products　　SOT23 Package: ESDCAN24HPY, ESDCAN24HXY, ESDCAN27HPY, ESDCAN27HXY　　DFN1010 Package: ESDCAN24YPA, ESDCAN24YXA, ESDCAN27YPA, ESDCAN27YXA　　Terminology CAN FD (CAN with Flexible Data Rate)　　An extension of the CAN (Controller Area Network) standard, CAN FD offers faster data transfer speeds compared to conventional CAN, enabling the exchange of large volumes of data. Real-time communication between multiple in-vehicle electronic units (ECUs) is essential in systems like autonomous driving and ADAS.　　TVS Diode (Transient Voltage Suppression Diode)　　A semiconductor device designed to protect circuits from overvoltage, surges, and electrostatic discharge (ESD). TVS diodes absorb sudden voltage and current spikes (surges) to prevent circuit damage and malfunction. In automotive environments, safeguarding against severe electrical fluctuations is crucial.　　Terminal Capacitance　　Unwanted capacitance components that arise in electronic parts. When terminal capacitance is high, signal degradation occurs during high-speed transmission, making it important to reduce terminal capacitance for in-vehicle communication　　Surge Current Rating　　The maximum surge current a TVS diode can withstand. The higher the surge current rating, the stronger the protection against severe electrical fluctuations in automotive environments.　　Clamping Voltage　　The voltage maintained in the circuit when the TVS diode suppresses overvoltage caused by surges or other transient events. A lower clamping voltage provides more effective protection for circuits and devices, increasing the reliability of automotive equipment.

Key word：

ROHM

Release time：2025-03-11 09:29 reading：268 Continue reading>>

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ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

　　ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models - SCS2xxxNHR - for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models - SCS2xxxN - for industrial equipment such as FA devices and PV inverters in December 2024.　　The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.　　As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.　　The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.　　Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.　　Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.　　Application Examples◇ Automotive applications: Onboard chargers (OBCs), DC-DC converters, etc.　　◇ Industrial Equipment: AC servo motors for industrial robots, PV inverters, power conditioners, uninterruptible power supplies (UPS), and more　　Online Sales InformationAvailability: The SCS2xxxxNHR for automotive applications are available now.　　The SCS2xxxN for industrial equipment are scheduled in December 2024.　　Pricing: $10.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　EcoSiC™ BrandEcoSiC™ is a brand of devices that leverage silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　TerminologyCreepage Distance　　The shortest distance between two conductive elements (terminals) along the surface of the device package. In semiconductor design, insulation measures with such creepage and clearance distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.　　Tracking (Creepage Discharge)　　A phenomenon where discharge occurs along the surface of the package (insulator) when high voltage is applied to the conductive terminals. This can create an unintended conductive path between patterns, potentially leading to dielectric breakdown of the device. Package miniaturization increases the risk of tracking by reducing creepage distance.　　Resin Potting　　The process of encapsulating the device body and the electrode connections between the device and circuit with resin, such as epoxy, to provide electrical insulation. This provides durability and weather resistance by protecting against water, dust, and other environmental conditions.　　AEC-Q101 Automotive Reliability Standard　　AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).

Key word：

ROHM

Release time：2024-11-20 14:00 reading：423 Continue reading>>

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What are TVS diodes in safeguarding electronics

　　In today’s interconnected world, electronic devices and systems are ubiquitous, powering our homes, workplaces, and communication networks. However, these devices are vulnerable to voltage transients—brief surges in voltage that can occur due to lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.　　To protect sensitive electronic components from such transients, Transient Voltage Suppressor TVS diodes play a crucial role. This article explores the functionality, applications, and importance of TVS diodes in safeguarding electronics.　　What is a Transient Voltage Suppressor (TVS) Diode?A Transient Voltage Suppressor (TVS) diode is a semiconductor device used to protect sensitive electronic components from voltage spikes or transient voltages that could potentially damage them. These spikes can be caused by events such as lightning strikes, electrostatic discharge (ESD), or switching transients in the electrical system.　　The TVS diode operates by providing a low-impedance path to divert excess voltage away from the protected components, thus limiting the voltage across them. When a transient voltage exceeds the breakdown voltage (also known as the clamping voltage or avalanche voltage) of the TVS diode, it starts to conduct, effectively shunting the excess current away from the protected circuit.　　What are the features of TVS diodes?Fast Response Time: TVS diodes respond quickly to transient events, providing protection within nanoseconds to microseconds.　　Low Clamping Voltage: The clamping voltage is the maximum voltage that the TVS diode allows to pass through to the protected circuit. It is typically lower than the voltage tolerance of the protected components, ensuring they remain safe.　　High Surge Current Capability: TVS diodes are designed to handle high surge currents associated with transient events, protecting the circuit from damage.　　Low Leakage Current: When not conducting, TVS diodes have low leakage current, minimizing power consumption and ensuring minimal impact on the protected circuit during normal operation.　　Robustness: TVS diodes are robust devices, able to withstand multiple transient events without degradation in performance.　　What are the applications of TVS diode?TVS diodes are commonly used in various applications, including:　　Protection of integrated circuits (ICs), microcontrollers, and other semiconductor devices from ESD and voltage transients.　　Protection of communication ports (such as USB, Ethernet, HDMI) and data lines in electronic equipment.　　Surge protection for power supply lines, signal lines, and sensor inputs in industrial and automotive electronics.　　Protection of sensitive electronic equipment against lightning-induced surges in telecommunications, power distribution, and other infrastructure.　　What’s the difference between TVS Diodes and Zener Diodes?TVS (Transient Voltage Suppressor) diodes and Zener diodes are both semiconductor devices used for voltage regulation, but they serve different purposes and operate in different ways. Here are the key differences between TVS diodes and Zener diodes:　　Purpose:　　• TVS Diodes: TVS diodes are primarily used for transient voltage suppression, meaning they protect electronic circuits from voltage spikes or transients caused by events like lightning strikes, electrostatic discharge (ESD), or inductive switching. Their main function is to provide surge protection and prevent damage to sensitive components.　　• Zener Diodes: Zener diodes are used for voltage regulation and voltage reference. They operate in the breakdown region and maintain a constant voltage across their terminals when reverse biased. Zener diodes are commonly used in voltage regulation circuits, voltage clamping circuits, and voltage reference circuits.　　Operating Principle:　　• TVS Diodes: TVS diodes operate by avalanche breakdown or Zener breakdown. When the voltage across a TVS diode exceeds its breakdown voltage, it starts to conduct heavily, providing a low-impedance path for excess current and diverting it away from the protected circuit.　　• Zener Diodes: Zener diodes operate in the reverse-biased breakdown region, where they maintain a constant voltage (known as the Zener voltage) across their terminals. They regulate voltage by allowing current to flow in the reverse direction when the applied voltage exceeds the Zener voltage.　　Voltage Characteristics:　　• TVS Diodes: TVS diodes typically have a very low clamping voltage (Vc) and are designed to handle high surge currents associated with transient events. They are optimized for fast response times and high-energy absorption capabilities.　　• Zener Diodes: Zener diodes have a well-defined breakdown voltage (Vz) at which they operate. The voltage across a Zener diode remains relatively constant over a wide range of currents when reverse biased, making them suitable for voltage regulation applications.　　Applications:　　• TVS Diodes: TVS diodes are used in applications requiring protection against voltage transients, such as in power supplies, communication ports (USB, Ethernet), data lines, and electronic equipment exposed to harsh environments or prone to ESD.　　• Zener Diodes: Zener diodes find applications in voltage regulation circuits, voltage references, voltage clamping circuits, reverse voltage protection, and precision voltage measurement circuits.　　How do TVS diodes work?　　TVS diodes work by providing a low-impedance path for excess voltage, diverting it away from sensitive electronic components and limiting the voltage across them to safe levels. They operate based on two main mechanisms: avalanche breakdown and Zener breakdown. Here’s how TVS diodes work:　　Avalanche BreakdownTVS diodes are typically fabricated with a highly doped semiconductor material that has a narrow depletion region. When the diode is reverse-biased (i.e., the voltage applied across it is in the opposite direction of its normal operation), the electric field across the depletion region increases.　　If the applied reverse voltage exceeds a certain threshold known as the breakdown voltage (also called clamping voltage or avalanche voltage), the strong electric field can accelerate charge carriers (electrons and holes) to high energies.　　These high-energy charge carriers collide with other atoms in the semiconductor lattice, generating additional charge carriers through impact ionization. This process cascades, resulting in a sudden increase in current flow through the diode.　　As a result, the TVS diode effectively clamps the voltage across its terminals at the breakdown voltage, providing a low-impedance path for excess current and limiting the voltage seen by the protected circuit.　　Zener BreakdownIn addition to avalanche breakdown, some TVS diodes may also utilize Zener breakdown to provide transient voltage suppression. Zener breakdown occurs when the reverse-biased diode operates in its Zener breakdown region.　　In this region, the diode behaves as a voltage regulator, maintaining a relatively constant voltage (known as the Zener voltage) across its terminals. When the applied reverse voltage exceeds the Zener voltage, the diode starts conducting heavily, effectively clamping the voltage across it.　　What causes a TVS diode to fail?TVS diodes are designed to withstand high levels of transient voltage and provide protection to sensitive electronic components. However, like any electronic component, TVS diodes can fail under certain conditions. Here are some common causes of TVS diode failure:　　Overvoltage Conditions: If the transient voltage exceeds the maximum rated clamping voltage (avalanche or Zener breakdown voltage) of the TVS diode, it may fail to suppress the transient effectively. This can happen if the transient event is exceptionally severe or if the TVS diode is underspecified for the application.　　Overcurrent Conditions: Excessive current flowing through the TVS diode, either due to a high-energy transient event or a sustained fault condition, can cause the diode to fail. Overcurrent can lead to thermal overstress, causing the diode to overheat and potentially short or open circuit.　　Reverse Polarity: Applying a reverse voltage beyond the maximum reverse voltage rating of the TVS diode can cause it to fail. This can occur due to improper installation or incorrect wiring in the circuit.　　End-of-Life Wear-Out: Like all semiconductor devices, TVS diodes have a limited lifespan, and their performance may degrade over time due to factors such as aging, temperature cycling, and electrical stress. As the diode approaches the end of its life, its ability to suppress transients effectively may diminish, leading to failure.　　Excessive Power Dissipation: TVS diodes are specified with maximum power dissipation ratings. Exceeding these ratings, either due to sustained overvoltage conditions or prolonged exposure to transient events, can cause the diode to overheat and fail.　　Manufacturing Defects: Rarely, TVS diodes may fail due to manufacturing defects such as material impurities, processing errors, or incomplete encapsulation. These defects can compromise the electrical and thermal performance of the diode, leading to premature failure.　　Improper Handling or Installation: Mishandling or improper installation of TVS diodes, such as mechanical stress during assembly, soldering defects, or exposure to corrosive environments, can lead to physical damage or degradation of the diode, resulting in failure.　　ConclusionTVS diodes are essential components in protecting electronic devices and systems from voltage transients. Their ability to clamp voltages and divert excess current away from sensitive components plays a vital role in ensuring the reliability and durability of modern electronics. As the demand for high-performance and reliable electronic products continues to grow, the importance of TVS diodes in safeguarding electronics will only increase, making them indispensable in today’s interconnected world.

Key word：

TVS

Release time：2024-07-16 13:08 reading：565 Continue reading>>

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What are diodes in the circuit board?

　　PCB diode is one of the most established and most significant electronic gadgets, in spite of the fact that it isn’t quite as well known as its cousin, the semiconductor. Utilized in a wide range of electrical and electronic frameworks, the diode capabilities as a one-way valve for electric flow — it just permits flow to stream in one bearing. This is valuable in changing AC over completely to DC, handling high recurrence signals, controlling voltages, and in different applications.　　There are two fundamental sorts of PCB diode. One is an electron tube like the triode. The other kind purposes semiconductors, similar to the semiconductor. Both were concocted from the get-go in the twentieth hundred years.　　In this article, you can know everything about PCB diode and related information about this topic.　　What are diodes in the circuit board?　　A PCB diode is a semiconductor gadget that basically goes about as a one-way switch for current. It permits current to stream effectively in one course, however seriously limits current from streaming the other way.　　PCB diode is otherwise called rectifier since it changes substituting current (ac) into throbbing direct current (dc). PCB diode is appraised by their sort, voltage, and current limit.　　PCB diode is not set in stone by an anode (positive lead) and cathode (adverse lead). PCB diode permits current to stream just when positive voltage is applied to the anode. An assortment of diode setups are shown in this realistic.　　PCB diode is accessible in different setups. From left: metal case, stud mount, plastic case with band, plastic case with chamfer, glass case. A PCB diode is the ‘one way’ sign for electrical circuits. The current is permitted to just travel through the PCB diode in one course. Every diode has a positive end, the anode, and an adverse end, the cathode. Current streams from the anode to the cathode, however not the reverse way around.　　Why we should use PCB diodes?　　A PCB diode is a gadget that permits current to stream in one heading however not the other. This is accomplished through an underlying electric field. Albeit the earliest diodes comprised of scorching wires going through the center of a metal chamber which itself was situated within a glass vacuum tube, present day diodes are semiconductor diodes. As the name recommends, these are produced using semiconductor materials, principally doped silicon.　　The most normal application is by a wide margin the utilization of PCB diode for the correction of AC capacity to DC power. Utilizing diodes, various kinds of rectifier circuits can be made, the most fundamental of which are half wave, full wave community tapped, and full scaffold rectifiers. These are critical in hardware power supplies – for instance, a PC’s charger – where an air conditioner current, which comes from the mains power supply, should be changed over completely to a DC current which can then be put away.　　Delicate electronic gadgets should be safeguarded from floods in voltage, and the diode is ideal for this. When utilized as voltage insurance gadgets, PCB diode is nonconducting, notwithstanding, they promptly short any high-voltage spike by sending it to the ground where it can’t hurt delicate coordinated circuits. For this utilization, particular diodes known as “transient voltage silencers” are planned. These can deal with huge power spikes throughout brief time frame periods which would ordinarily harm touchy parts.　　Characteristics of diode　　Fundamental static attributes of PCB diode are the forward voltage VF and forward current IF, and the opposite voltage and current VR and IR.　　The region encompassed by the orange ran line in the chart on the right shows the usable area of amending diodes. In particular, this is the region inside the scope of admissible IF, and inside the breakdown voltage range in the opposite bearing. It ought to be noticed that the region encased by the green ran line is the usable area of Zener diodes, albeit these are not examined in this part. This region isn’t usable for different diodes, and assuming this region is placed unbounded on the IR, gadget disappointment might happen.　　Reverse Recovery Time is when, from the state wherein a voltage is applied in the forward heading and forward current In the event that is streaming, the voltage is shifted to the opposite course and the converse current IR gets back to the consistent state (basically zero).　　As shown in the graph on the right, when the gadget changes from the ON-state in which an In the event that is streaming to the OFF-state, in a perfect world IF would quickly go to nothing. Yet, in reality, zero is passed, and a converse current IR streams quickly, which recuperates to focus in time Reverse Recovery Time. The more limited Reverse Recovery Time is, the better is the gadget trademark.　　The capacitance Ct is the capacitance of the actual diode, and has a similar impact as a capacitor. As in the chart on the right, when a PCB diode is turned here and there, assuming Ct is huge, the supposed adjusting of the waveform turns out to be more articulated, and sometimes there might be the issue that the gadget starts switch off activity before an applied voltage arrives at a full level because of time constants. In a rapid exchanging circuit, diodes with a low Ct are attractive.

Key word：

PCB

Release time：2023-12-21 16:23 reading：1444 Continue reading>>

Ameya360:ROHM Semiconductor RLD90QZWx 905nm Invisible Pulsed Laser <span style='color:red'>Diodes</span>

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Ameya360:ROHM Semiconductor RLD90QZWx 905nm Invisible Pulsed Laser Diodes

　　ROHM Semiconductor RLD90QZWx 905nm Invisible Pulsed Laser Diodes feature narrow emission width and high energy conversion efficiency. The narrow emission width helps achieve an impressive detection distance and sensing accuracy. These laser diodes have a unique structure that reduces wavelength fluctuations. The RLD90QZWx 905nm invisible pulsed laser diodes come in industry standard Φ5.6 package. Typical applications include laser range finders, Automatic Guided Vehicles (AGVs), and security applications.　　FEATURES　　905nm wavelength　　Narrow emission width　　High energy conversion efficiency　　Reduced wavelength fluctuations　　Low power consumption　　Industry-standard Φ5.6 package　　APPLICATIONS　　Laser range finders　　Automatic Guided Vehicles (AGVs)　　Security

Key word：

Ameya360,ROHM

Release time：2023-03-09 11:24 reading：2266 Continue reading>>

Ameya360:<span style='color:red'>Diodes</span> Launches First SiC SBDs

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Ameya360:Diodes Launches First SiC SBDs

　　Diodes Inc. has released its first silicon carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the DIODES DSCxxA065 series with 11 products rated at 650V (4A, 6A, 8A, and 10A) and the DIODES DSCxx120 series with eight products rated at 1.2kV (2A, 5A, and 10A).　　These wide-bandgap SBDs bring the benefits of significantly improved efficiency and high-temperature reliability, while also responding to market demands for reduced system running costs and low maintenance. The devices are suitable for AC-DC, DC-DC, and DC-AC switching converters, photovoltaic inverters, uninterruptable power supplies, and industrial motor drive applications. These devices can also be used in a variety of other circuits, such as boost converters for power factor correction.　　The efficient performance of these SiC devices are superior to those of conventional silicon-based products, and provide power supply designers with uncompromising product performance benefits, such as:　　Negligible switching losses due to low capacitive charge (QC) that provide high efficiency in fast switching applications. This is suitable for circuit designs with higher power density and smaller overall solution size.　　Low forward voltage (VF) that further improves efficiency, reducing power losses and operational costs.　　Reduced heat dissipation that helps lower overall system cooling budgets.　　High surge current capability that increases robustness for better system reliability, while excellent thermal performance reduces build costs.　　Three package options include surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC).

Key word：

Diodes,SiC,SBD

Release time：2023-02-13 15:06 reading：2236 Continue reading>>

<span style='color:red'>Diodes</span>’ Power Switch Enhances Power-rail Management in SSDs

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Diodes’ Power Switch Enhances Power-rail Management in SSDs

　　Diodes' new single-channel high-side power switch features three different selectable slew rates so that wider capacitance loads can be handled while keeping inrush currents down.　　Diodes Inc. has launched a new versatile single-channel high-side power switch that features three different selectable slew rates so that wider capacitance loads can be handled while keeping inrush currents down, ensuring system stability. The DIODES AP22980 power switch is targeted at the solid-state data storage systems used in portable electronic equipment, computer hardware, and edge-based data center deployments.　　The N-channel MOSFET, with a built-in charge pump inside the AP22980, has an extremely low Rds(ON) of 5.1m? enabling loads reaching 6A while minimizing voltage drops and power losses in high current loading applications. By having a separate VBIAS pin, the minimum input voltage that it is capable of supporting is significantly lower, resulting in a wider input voltage range that can be covered—from 0.285V to 5.5V—enabling greater application flexibility.　　With 60?A (typical) quiescent supply current, the AP22980 is highly optimized for situations where keeping standby power consumption down is a priority. This device has an operational temperature range of -40°C to 105°C. If the junction temperature exceeds 150°C, an overtemperature protection mechanism is triggered.　　The AP22980 three-level selectable slew rate power switches are supplied in the compact W-QFN1520 package that takes up little board space and eases integration.

Key word：

Diodes

Release time：2022-12-27 13:27 reading：2160 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics

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