Ameya360:Diodes Launches First SiC SBDs

Release time：2023-02-13
author：Ameya360
source：网络
reading：2236

　　Diodes Inc. has released its first silicon carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the DIODES DSCxxA065 series with 11 products rated at 650V (4A, 6A, 8A, and 10A) and the DIODES DSCxx120 series with eight products rated at 1.2kV (2A, 5A, and 10A).

Ameya360:Diodes Launches First SiC SBDs

　　These wide-bandgap SBDs bring the benefits of significantly improved efficiency and high-temperature reliability, while also responding to market demands for reduced system running costs and low maintenance. The devices are suitable for AC-DC, DC-DC, and DC-AC switching converters, photovoltaic inverters, uninterruptable power supplies, and industrial motor drive applications. These devices can also be used in a variety of other circuits, such as boost converters for power factor correction.

　　The efficient performance of these SiC devices are superior to those of conventional silicon-based products, and provide power supply designers with uncompromising product performance benefits, such as:

　　Negligible switching losses due to low capacitive charge (QC) that provide high efficiency in fast switching applications. This is suitable for circuit designs with higher power density and smaller overall solution size.

　　Low forward voltage (VF) that further improves efficiency, reducing power losses and operational costs.

　　Reduced heat dissipation that helps lower overall system cooling budgets.

　　High surge current capability that increases robustness for better system reliability, while excellent thermal performance reduces build costs.

　　Three package options include surface mount TO252-2 (Type WX), through-hole TO220AC (Type WX), and ITO220AC (Type WX-NC).


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Diodes’ Power Switch Enhances Power-rail Management in SSDs
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Diodes’ Power Switch Enhances Power-rail Management in SSDs

　　Diodes' new single-channel high-side power switch features three different selectable slew rates so that wider capacitance loads can be handled while keeping inrush currents down.　　Diodes Inc. has launched a new versatile single-channel high-side power switch that features three different selectable slew rates so that wider capacitance loads can be handled while keeping inrush currents down, ensuring system stability. The DIODES AP22980 power switch is targeted at the solid-state data storage systems used in portable electronic equipment, computer hardware, and edge-based data center deployments.　　The N-channel MOSFET, with a built-in charge pump inside the AP22980, has an extremely low Rds(ON) of 5.1m? enabling loads reaching 6A while minimizing voltage drops and power losses in high current loading applications. By having a separate VBIAS pin, the minimum input voltage that it is capable of supporting is significantly lower, resulting in a wider input voltage range that can be covered—from 0.285V to 5.5V—enabling greater application flexibility.　　With 60?A (typical) quiescent supply current, the AP22980 is highly optimized for situations where keeping standby power consumption down is a priority. This device has an operational temperature range of -40°C to 105°C. If the junction temperature exceeds 150°C, an overtemperature protection mechanism is triggered.　　The AP22980 three-level selectable slew rate power switches are supplied in the compact W-QFN1520 package that takes up little board space and eases integration.
2022-12-27 13:27 reading：2160
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