ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

发布时间：2025-06-23 14:11
作者：AMEYA360
来源：ROHM
阅读量：229

　　~Integration in traction inverters extends the cruising range and improves performance~

　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.

　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.

　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.

　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.

ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　About the "bZ5"

　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.

　　About HAIMOSIC (SHANGHAI) Co., Ltd.

　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/


（备注：文章来源于网络，信息仅供参考，不代表本网站观点，如有侵权请联系删除！）

上一篇：Tumfei Valve Technology：Fine small electric actuator

下一篇：Tumfei Valve Technology：The principle of common valves and their use

在线留言询价

相关阅读
New High Accuracy Current Sense Amps Compatible with Both Negative and High Voltages
Trade news

New High Accuracy Current Sense Amps Compatible with Both Negative and High Voltages

　　ROHM has developed a new lineup of high accuracy current sense amps – the BD1423xFVJ-C and the BD1422xG-C. They are qualified under the AEC-Q100 automotive reliability standard. The BD1423xFVJ-C series, offered in the TSSOP-B8J package, supports input voltages up to +80V, making it ideal for high-voltage environments such as 48V DC-DC converters, redundant power supplies, auxiliary batteries, and electric compressors. The series includes three models with different gain settings: BD14230FVJ-C, BD14231FVJ-C and BD14232FVJ-C.　　For lower voltage use cases, the BD1422xG-C, available in the compact SSOP6 package, supports input voltages up to +40V. This makes them suitable for automotive applications requiring space-saving designs, such as current monitoring and protection (overcurrent) in 5V/12V power supply networks used in body and drivetrain domains. Like its high-voltage counterpart, this series also consists of three different gain options: BD14220G-C, BD14221G-C and BD14222G-C.　　In recent years, alongside conventional 5V/12V power supplies, the automotive market has seen a growing adoption of 48V systems fueled by the rising popularity of electric vehicles. Furthermore, as vehicle functionality becomes more advanced, the need for precise monitoring and control across a wide range of applications continues to increase, placing a greater importance on high-accuracy current sensing.　　A current sense amp indirectly measures the current flowing through a circuit by amplifying the miniscule voltage drop across a shunt resistor. The amplified signal is then sent to an ADC or comparator for system control and monitoring. ROHM’s automotive-grade current sense amps meet market demands by leveraging proven analog expertise. This enables high-accuracy current sensing with compatibility for both negative and high voltage environments, contributing to improved safety and reliability in automotive applications, particularly electric vehicles.　　These new products achieve greater space efficiency by integrating most of current sensing circuitry, typically comprised of an operational amplifier and discrete components, int o a single package. As a result, current detection is possible by simply connecting a shunt resistor. The devices also feature a two-stage amplifier configuration, consisting of a chopper amplifier at the input and an auto-zero amplifier at the output. Internal resistor matching for gain setting ensures stable, accurate current sensing (±1%) while minimizing the effects of temperature variations.　　Furthermore, current detection accuracy is maintained even when an external RC filter circuit added for noise suppression, significantly reducing design complexity and development time. Additional features include -14V negative voltage tolerance that supports back electromotive force, reverse connection, and negative voltage input.　　Going forward, ROHM will continue to deliver optimal solutions that contribute to higher precision and enhanced reliability in automotive equipment.　　Application Examples　　• BD1423xFVJ-C (for 48V systems): Redundant power supplies, auxiliary batteries, DC-DC converters, and electric compressors, and the like　　• BD1422xG-C (for 5V/12V systems): Body DCUs (Domain Control Units) / ECUs (Electronic Control Units), etc.　　Terminology　　AEC-Q100 Automotive Reliability Standard　　AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q100 is a standard that specifically applies to integrated circuits (ICs).　　Shunt Resistor　　A resistor connected in series in the current path to detect the current in the circuit by measuring the potential difference across it.　　Chopper Amp　　An amp circuit designed to minimize signal offset and noise, primarily used for accurately amplifying low-frequency and weak DC signals.　　Auto-Zero Amp　　An amp that automatically compensates for offset voltage (unwanted noise and errors) by continuously sampling and correcting it during operation. This ensures high signal accuracy, making it ideal for applications that demand ultra-precise measurement and signal processing.
2025-06-13 16:56 阅读量：281
ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture
Trade news

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture

　　As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.　　ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.　　A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.　　Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.　　ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.　　Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.　　Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.　　The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
2025-06-13 16:52 阅读量：287
ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity
Trade news

ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity

　　ROHM has expanded its portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types. They are optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors.　　The demand for advanced sensing technologies utilizing near-infrared (NIR) has grown in recent years, particularly in VR/AR equipment and biosensing devices. These technologies are used in applications such as eye tracking, iris recognition, and blood flow/oxygen saturation measurements that require high accuracy. At the same time, miniaturization, energy efficiency, and design flexibility are becoming increasingly important. In industrial equipment, near-infrared LEDs are playing a greater role with the rise of precise printer control and automation systems. In response, ROHM is expanding customer options by developing a lineup of compact packages and wavelengths that offer greater design flexibility, while contributing to higher precision and power savings by achieving high radiant intensity.　　The new lineup consists of six models in three package configurations, including two ultra-compact (1.0mm × 0.6mm), ultra-thin (t=0.2mm) products as part of the PICOLED™ series: SML-P14RW and SML-P14R3W. In addition, there are four variants in the industry-standard (1.6mm × 0.8mm) size, featuring a narrow beam circular lens package (CSL0902RT, CSL0902R3T) and flat lens design that emits light over a wide range (CSL1002RT, CSL1002R3T). Each package is available in two wavelengths, 850nm (860nm for the SML-P14RW) and 940nm, allowing customers various options for their specific application needs. The 850nm wavelength is ideal for phototransistors and camera sensors, making it suitable for high-sensitivity applications such as eye tracking and object detection in VR/AR. At the same time, the 940nm wavelength is less affected by sunlight and does not appear red when emitting light, making it suitable for motion sensors. It is also widely used in biosensing applications such as pulse oximeters to measure blood flow and oxygen saturation (SpO2).　　The light source incorporates an NIR element with an optimized emission layer structure utilizing proprietary technology developed through in-house manufacturing expertise. This has made it possible to achieve industry-leading* radiant intensity in a compact package, which was previously considered difficult. For example, compared to a standard 1006 size product, the SML-P14RW delivers approx. 1.4 times the radiant intensity at the same current. In other words, the SML-P14RW consumes 30% less power to achieve the same radiation intensity. This technology improves sensing accuracy and power savings for the entire system.　　Going forward, ROHM will continue to provide innovative light source solutions that support next-generation sensing technologies, creating new value in the VR/AR and industrial equipment markets, while contributing to the realization of a sustainable society.　　Compact NIR LED Lineup　　*1:Ta=25°C *2:IF=30mA *3:IF=20mA　　ROHM also offers NIR-sensitive phototransistors.　　Application Examples　　• VR/AR licenses (eye tracking, gesture recognition)　　• Pulse oximeters (blood flow/oxygen saturation measurement)　　• Industrial optical sensors (object passage detection, position detection), self-checkout systems (bill/card detection), mobile printers (paper detection)　　• Home appliance remote controls (IR data communication), robot vacuum cleaners (floor detection)　　Terminology　　VR/AR (Virtual Reality/Augmented Reality)　　Virtual reality immerses users in a completely digital environment through small high-resolution monitors or screens within an enclosed space. Augmented reality enhances the real world by overlaying digital content onto a headset or smart glasses, enabling users to interact with 3D images. Collectively, these technologies are sometimes referred to as XR (Cross Reality or Extended Reality).　　Near-Infrared (NIR)　　Refers to light in the wavelength range of 780nm to 1000nm. Primarily used in sensors, communication and measurement applications, it is suitable for high accuracy distance measurement and recognition.　　PICOLED™ Series　　ROHM's ultra-small, ultra-thin chip LEDs designed for compact mobile devices and wearables, developed using a proprietary element manufacturing process.　　Radiant Intensity　　An index representing the strength of energy emitted by a light-emitting device in a specific direction (unit: W/sr). This is an important factor that affects the LED’s output intensity and detection performance on the receiving side.　　Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies.　　*PICOLED™ is a trademark or registered trademark of ROHM Co., Ltd.
2025-05-26 14:54 阅读量：339
DENSO and ROHM Reach Basic Agreement to Establish a Strategic Partnership in the Semiconductor Field
Trade news

DENSO and ROHM Reach Basic Agreement to Establish a Strategic Partnership in the Semiconductor Field

　　DENSO CORPORATION and ROHM Co., Ltd. are pleased to announce that the two companies have reached a basic agreement to establish a strategic partnership in the semiconductor field. This agreement follows discussions and considerations that began in September 2024.　　Recently, the importance of semiconductors that support the electrification and intelligence of vehicles has been increasing significantly. This is driven by the development and spread of electric vehicles aimed at achieving carbon neutrality, as well as the realization of automated driving, which is expected to contribute to zero fatalities in traffic accidents.　　DENSO and ROHM have a long-standing collaboration in the trade and development of automotive semiconductors. Going forward, both companies will integrate DENSO's advanced system construction capabilities in the automotive sector with ROHM's cutting-edge semiconductor technology, cultivated in the consumer market. This partnership will focus on enhancing the lineup of high-quality devices, particularly analog ICs, that support vehicle electrification and intelligence, and deepening collaboration in development. Additionally, in highly compatible fields within their semiconductor businesses, both companies will discuss broad collaboration. By globally supplying products created through this co-creation, both companies aim to contribute to technological innovation in the automotive field and realize a sustainable mobility society.　　To further solidify this partnership, DENSO and ROHM will continue to consider strengthening their capital relationship.　　DENSO CORPORATION President & CEO, Shinnosuke Hayashi　　DENSO positions semiconductors as key devices to realize next-generation vehicle systems and has been deepening its cooperative relationships with semiconductor manufacturers that possess rich experience and knowledge. ROHM has a wide range of semiconductor lineups that are crucial for automotive electronics products, essential for vehicle intelligence and electrification. We are very pleased that the partnership with ROHM is progressing smoothly. By further deepening the collaboration between both companies and integrating DENSO's accumulated automotive technology and expertise, we believe we can contribute to the development of the mobility society through stable supply and enhanced product value.　　ROHM Co., Ltd. President (Representative Director), Katsumi Azuma　　We are very pleased to deepen our collaborative relationship with DENSO, a leader in technological innovation for the mobility society. This partnership not only strengthens our relationship as suppliers but also envisions broad collaboration in the semiconductor business of both companies. Initially, we will focus on the development of analog ICs related to next-generation systems such as electrification, automated driving, and connected vehicles. Furthermore, without narrowing the scope, we will integrate our respective technologies, knowledge, and assets across a wide range of fields to contribute to technological innovation and stable supply in the automotive industry.
2025-05-13 15:12 阅读量：352
热门分类
盒子，外壳，机架 电缆，电线 电路保护 连接器，互连器件 开发套件 机电产品 嵌入式解决方案 风扇，热管理 光电元件 其它 无源元件 电源 半导体 传感器，变送器 测试与测量
  • 一周热料
  • 紧缺物料秒杀
型号 品牌 询价
TL431ACLPR Texas Instruments
CDZVT2R20B ROHM Semiconductor
RB751G-40T2R ROHM Semiconductor
BD71847AMWV-E2 ROHM Semiconductor
MC33074DR2G onsemi
型号 品牌 抢购
BP3621 ROHM Semiconductor
TPS63050YFFR Texas Instruments
STM32F429IGT6 STMicroelectronics
IPZ40N04S5L4R8ATMA1 Infineon Technologies
BU33JA2MNVX-CTL ROHM Semiconductor
ESR03EZPJ151 ROHM Semiconductor
热门标签
ROHM
Aavid
Averlogic
开发板
SUSUMU
NXP
PCB
传感器
半导体
原厂授权品牌
更多授权品牌>>
资讯排行榜
  • 周排行榜
  • 月排行榜

相关百科
关于我们
AMEYA360微信服务号 AMEYA360微信服务号
AMEYA360商城(www.ameya360.com)上线于2011年，现 有超过3500家优质供应商，收录600万种产品型号数据，100 多万种元器件库存可供选购，产品覆盖MCU+存储器+电源芯 片+IGBT+MOS管+运放+射频蓝牙+传感器+电阻电容电感+ 连接器等多个领域,平台主营业务涵盖电子元器件现货销售、 BOM配单及提供产品配套资料等，为广大客户提供一站式购 销服务。

请输入下方图片中的验证码：

验证码