High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode <span style='color:red'>GaN</span>
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High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.
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Release time：2025-08-07 14:08 reading：887 Continue reading>>
Renesas Strengthens Power Leadership with New <span style='color:red'>GaN</span> FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
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Release time：2025-07-04 15:04 reading：772 Continue reading>>
ROHM’s Eco<span style='color:red'>GaN</span>™ has been Adopted for AI Server Power Supplies by Murata Power Solutions
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ROHM’s EcoGaN™ has been Adopted for AI Server Power Supplies by Murata Power Solutions

　　ROHM has announced that the EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization. Mass production of this power supply unit is set to begin in 2025.　　Rapid advancements in IoT-related fields such as AI and AR (Augmented Reality) have led to a surge in global data traffic in recent years. Notably, the power consumption for a single AI-generated response is estimated to be several times higher than that of a standard Internet search, highlighting the need for more efficient AI power supplies. Meanwhile, GaN devices, known for low ON resistance and high-speed switching performance, are gaining attention for their ability to enhance power supply efficiency while reducing the size of peripheral components such as inductors used in power circuits.　　Dr. Joe Liu, Technical Fellow, Murata Power Solutions　　“We are pleased to have successfully designed AI server power supply units featuring higher efficiency and power density by incorporating ROHM’s GaN HEMTs. The high-speed switching capability, low parasitic capacitance, and zero reverse recovery characteristics of GaN HEMTs help minimize switching losses. This allows for higher operating frequencies in switching converters, reducing the size of magnetic components. ROHM’s GaN HEMTs deliver competitive performance and exceptional reliability, yielding excellent results in the development of Murata Power Solutions’ 5.5kW AI server power supply units. Going forward, we will continue our collaboration with ROHM, a leader in power semiconductors, to improve the efficiency of power supplies and address the social issue of increasing power demand.”　　Yuhei Yamaguchi, General Manager, Power Stage Product Development Div., LSI Business Unit, ROHM Co., Ltd.　　“We are delighted that ROHM's EcoGaN™ products have been integrated into AI server power supply units from Murata Power Solutions, a global leader in power supplies. The GaN HEMTs used in this application provide industry-leading switching performance in a high heat dissipation TOLL package, enhancing power density and efficiency in Murata Power Solutions’ power supply units. We look forward to strengthening our partnership with Murata Manufacturing, a company that shares the similar vision of contributing to society through electronics - promoting the miniaturization and efficiency of power supplies to enrich people’s lives.”　　Murata Power Solutions’ Power Supply Units for AI Servers　　Murata Power Solutions’ series of “1U Front End” AC-DC power supplies includes the D1U T-W-3200-12-HB4C (12V output) and D1U T-W-3200-54-HB4C (54V output) 3.2kW power supplies in the high power density short version M-CRPS package, as well as the 5.5kW D1U67T-W-5500-50-HB4C designed for AI servers. These front-end power supplies deliver high conversion efficiency that meets the stringent requirements of 80+ Titanium and Open Compute products while supporting N+m redundant operation for system reliability, making them ideal for powering the latest GPU servers. In addition to providing reliable, efficient power for servers, workstations, and storage/communication systems, the low profile 1U design of these units helps to minimize system footprint.　　ROHM's EcoGaN™　　ROHM’s brand name for GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.　　• EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.　　Related ROHM Web Pages        • 650V TOLL Package GaN HEMTs (Feb. 2025 News Release)　　https://www.rohm.com/news-detail?news-title=2025-02-27_news_gan&defaultGroupId=false　　• ROHM GaN Power Device Page (EcoGaN™)　　https://www.rohm.com/products/gan-power-devices/　　About Murata Manufacturing　　Murata Manufacturing is a global leader in the development, production, and sales of ceramic-based electronic components. By leveraging proprietary expertise in material development, process innovation, product design, and production technology, supported by software, analysis, and evaluation, Murata Manufacturing creates innovative products that drive the advancement of an electronic society.　　For more information, please visit Murata Manufacturing's website: https://corporate.murata.com/en-global/
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Release time：2025-03-13 11:46 reading：652 Continue reading>>
ROHM launches 650V <span style='color:red'>GaN</span> HEMT in a compact, high-heat dissipation TOLL package
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ROHM launches 650V GaN HEMT in a compact, high-heat dissipation TOLL package

　　ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.　　Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.　　ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup - meeting the market demand for even smaller and more efficient high-power applications.　　The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.　　To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.　　In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.　　Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR (WEIHAI) CO., LTD.　　“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”　　Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.　　“We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people's lives.”　　EcoGaN™ Brand       Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples       Power supply for servers, communication base stations, industrial equipment and more.　　AC adapters (USB chargers), PV inverters, ESS (Energy Storage System).　　In a wide range of power supply systems with output power of 500W to 1kW class can be installed.　　Online Sales InformationSales Launch Date: December 2024　　Applicable Part No: GNP2070TD-ZTR　　The products will be available at DigiKey™, Mouser™ and Farnell™ from March, and will also be offered at other online distributors as they become available.　　Online Sales Information       Sales Launch Date: December 2024       Applicable Part No: GNP2070TD-ZTR　　　　About ATX SEMICONDUCTOR (WEIHAI) CO., Ltd.       ATX is an OSAT company based in Weihai, Shandong Province China, specializing in the assembly and testing of power devices. We support over 50 types of packages, including MOSFETs, IGBTs, SiC, and GaN devices, with an annual production capacity exceeding 5.7 billion units. ATX’s products are widely used in industrial equipment, automotive systems, renewable energy applications such as solar power, and consumer electronics. Notably, we hold a strong market share in the electric vehicle control sector, supplying internationally recognized brands.　　As a leading company in next-generation semiconductor device development utilizing proprietary intellectual properties and core technologies, ATX has established close, long-term collaborative relationships with the world’s top 10 power device companies.　　For more information, please visit ATX’s website: http://www.atxwh.com/　　Terminology       GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is gaining adoption for its superior properties (over silicon), including exceptional high-frequency characteristics. HEMT stands for High Electron Mobility Transistor.　　RDS(ON) × Qoss　　An index for evaluating device performance, where Qoss represents the total output-side amount of charge between the drain and source. RDS(ON) refers to the on-state resistance between the Drain and Source of a MOSFET. The smaller RDS(ON) is, the lower the (power) loss during operation. Minimizing the product of these two leads to more efficient the switching operation and reduced switching losses.
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Release time：2025-03-11 09:14 reading：722 Continue reading>>
ROHM's Eco<span style='color:red'>GaN</span>™ has been adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a brand of Delta
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ROHM's EcoGaN™ has been adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a brand of Delta

　　ROHM has announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from Innergie, a brand of Delta. Delta is a global provider of IoT-based Smart Green Solutions headquartered in Taiwan. ROHM’s EcoGaN™ device contributes to greater application performance, reliability, and miniaturization by providing higher efficiency in power supply systems.　　Efforts to save energy are accelerating toward achieving a sustainable society by reducing power loss, especially in equipment that handle high power. Furthermore, GaN devices that enable high-speed switching are being considered for power supplies, since high frequency operation not only saves energy but also allows the use of smaller circuits.　　Offering GaN-based devices under the brand name EcoGaN™, ROHM is advancing product development and providing solutions by focusing on mastering the use of GaN, which has high potential but is difficult to handle. For discrete products, mass production of 150V withstand GaN HEMTs began in 2022 and 650V withstand GaN HEMTs in 2023 featuring industry-leading device performance (RDS(ON) × Ciss / RDS(ON) × Coss). What’s more, integrating an ESD protection element into the GNP1150TCA-Z improves ESD breakdown tolerance by approximately 75% over standard GaN HEMTs, and has been evaluated to improve application reliability that ultimately led its adoption.　　Yuhei Yamaguchi, General Manager,　　Power Stage Product Development Dept., LSI Business Div., ROHM Co., Ltd.　　We are pleased to have ROHM's EcoGaN™ incorporated into USB-C chargers from Delta, a global leader in power and thermal management solutions. ROHM contributes to Delta’s prowess in high-energy power supplies by leveraging analog technology that maximizes power semiconductor performance and achieves superior topologies. Both companies share a similar management vision to realize a decarbonized and digital society, forming a strong partnership that resulted in the adoption of ROHM devices and ICs in Delta’s power circuit design. Furthermore, we look forward to our continued collaboration to promote greater miniaturization and efficiency in chargers and other products that can contribute to enriching people’s lives.　　Jason Chen, General Manager,　　Innergie, a brand of Delta　　The development of GaN power devices is a major focus in the global electronics industry, and therefore, we have deepened our collaboration with ROHM over the past several years. Moreover, in 2022, we initiated a strategic partnership to jointly develop next-generation power semiconductors for power supply systems. This partnership has delivered ROHM’s advanced 650V GaN (GNP1150TCA-Z) devices, which are now supporting Innergie’s new products. The C4 Duo is the first model from Innergie’s One for All Series adapters to use ROHM’s GaN devices, and we expect more models to adopt this state-of-the-art technology. We believe that, by strengthening our collaboration with ROHM, we will be able to provide customers adapters featuring higher power efficiency and capability, but with much smaller product size.　　Related Pages　　・Delta Electronics Website　　https://www.deltaww.com/en-US/index　　・Innergie Website　　https://myinnergie.com/us/product/c4-duo-45w-dual-usbc-power-adapter-fold/　　・ROHM's GaN Power Device Website　　https://www.rohm.com/products/gan-power-devices　　ROHM EcoGaN™　　Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.
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Release time：2024-02-27 13:51 reading：951 Continue reading>>
Renesas to Acquire Transphorm to Expand its Power Portfolio with <span style='color:red'>GaN</span> Technology
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Renesas to Acquire Transphorm to Expand its Power Portfolio with GaN Technology

　　Renesas Electronics Corporation (“Renesas,” TSE: 6723), a premier supplier of advanced semiconductor solutions, and Transphorm, Inc. (“Transphorm,” Nasdaq: TGAN), a global leader in robust gallium nitride (“GaN”) power semiconductors, today announced that they have entered into a definitive agreement pursuant to which a subsidiary of Renesas will acquire all outstanding shares of Transphorm’s common stock for $5.10 per share in cash, representing a premium of approximately 35% to Transphorm’s closing price on January 10, 2024, a premium of approximately 56% to the volume weighted average price over the last twelve months and a premium of approximately 78% to the volume weighted average price over the last six months. The transaction values Transphorm at approximately $339 million. The acquisition will provide Renesas with in-house GaN technology, a key next-generation material for power semiconductors, expanding its reach into fast-growing markets such as EVs, computing (data centers, AI, infrastructure), renewable energy, industrial power conversion and fast chargers/adapters.　　Demand for highly efficient power systems is increasing as building blocks for carbon neutrality. To address this trend, an industry-wide transition toward wide bandgap (“WBG”) materials, represented by silicon carbide (“SiC”) and GaN, is also being seen. These advanced materials allow a broader range of voltage and switching frequency than conventional silicon-based devices. To build on this momentum, Renesas has announced the establishment of an in-house SiC production line, supported by a 10 year SiC wafer supply agreement.　　Renesas now aims to further expand its WBG portfolio with Transphorm’s expertise in GaN, an emerging material that enables higher switching frequency, lower power losses, and smaller form factors. These benefits empower customers’ systems with greater efficiency, smaller and lighter composition, and lower overall cost. As such, demand for GaN is predicted to grow by more than 50 percent annually, according to an industry study. Renesas will implement Transphorm’s auto-qualified GaN technology to develop new enhanced power solution offerings, such as X-in-1 powertrain solutions for EVs, along with computing, energy, industrial and consumer applications.　　“Transphorm is a company uniquely led by a seasoned team rooted in GaN power and with origins from the University of California at Santa Barbara,” said Hidetoshi Shibata, CEO of Renesas. “The addition of Transphorm’s GaN technology builds on our momentum in IGBT and SiC. It will fuel and expand our power portfolio as a key pillar of growth, offering our customers the full ability to choose their optimal power solutions.”　　“Combined with Renesas’ world-wide footprint, breadth of solution offerings and customer relationships, we are excited to pave the way for industry-wide adoption of WBG materials and set the stage for significant growth. This transaction will also allow us to offer further expanded services to our customers and deliver significant immediate cash value to our stockholders,” said Dr. Primit Parikh, Co-founder, President and CEO of Transphorm and Dr. Umesh Mishra, Co-founder and CTO of Transphorm. “Additionally, it will provide a strong platform for our exceptional team to further Transphorm’s leading GaN technology and products.”　　Transaction Details　　The board of directors of Transphorm has unanimously approved the definitive agreement with respect to the transaction and recommended that Transphorm stockholders adopt such definitive agreement and approve the merger. Concurrently with the execution of the definitive agreement, KKR Phorm Investors L.P., which holds approximately 38.6% of Transphorm’s outstanding common stock, has entered into a customary voting agreement with Renesas to vote in favor of the transaction.　　The transaction is expected to close in the second half of calendar year 2024, subject to Transphorm stockholder approval, required regulatory clearances and the satisfaction of other customary closing conditions.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.
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Release time：2024-01-15 15:48 reading：2258 Continue reading>>
Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and <span style='color:red'>GaN</span> Power Semiconductors?
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Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power Semiconductors?

　　Governments around the world and companies in all industries and businesses are coming together to engage in efforts to achieve carbon neutrality (Fig. 1). Every conceivable multifaceted decarbonization measure is being taken. This includes, for instance, the utilization of renewable energies such as solar power, the electrification of equipment that was previously used by burning fossil fuels, and the reduction in power consumption of existing devices like home appliances, IT equipment, and industrial motors.　　Various countries and regions have introduced carbon pricing mechanisms as systems to shift greenhouse gas emissions from business activities to costs. As a result, in addition to being meaningful as social contribution, carbonization initiatives now have a clear numerical impact on the financial statements that serve as a report card for corporate management.　　Full Model Change in Semiconductor Materials for the First Time in 50 Years　　There has been an increase in activity for decarbonization efforts. Against this background, there is a field in semiconductors where the pace of the movement in technological innovation is rapidly accelerating. This is the power semiconductor field.　　Power semiconductors are semiconductor devices that play the role of managing, controlling, and converting the power necessary to operate electrical and electronic equipment. These devices are built into so-called power electronics circuits. These circuits include power circuits that stably supply drive power to home appliances and IT equipment, power conversion circuits to transmit and distribute power without waste, and circuits that drive motors with high efficiency at a torque and rotational speed that can be controlled freely. These power semiconductors, which are key devices to realize a sustainable society, have now started to undergo a once-in-50-years full model change.　　Power semiconductors have various device structures including MOSFET*1, IGBT*2, and diodes. They are used differently according to the purpose. Nevertheless, although the structure differs, silicon (Si) has consistently been used for more than 50 years as the device material. That is because Si has good electrical characteristics and has the property of being easy to process into various device structures at the same time.　　*1: A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of Field Effect Transistor. It functions as an electrical switch. These transistors consist of three layers: a metal, oxide, and semiconductor. The current is turned on and off by applying a voltage to the electrode called a gate.　　*2: An Insulated Gate Bipolar Transistor (IGBT) is a transistor with a structure that combines a MOSFET and bipolar transistor. It is characterized by combining the high-speed operation of the MOSFET with the high withstand voltage and low resistance of the bipolar transistor.　　However, Si-based power semiconductors are no longer able to clear the high level of technical requirements to further reduce the power consumption of various electrical and electronic equipment. To overcome this situation, progress is underway on the utilization of new materials such as silicon carbide (SiC) and gallium nitride (GaN), which are more suitable than Si as materials for power semiconductors. SiC and GaN have multiple physical properties and characteristics suitable for power semiconductors. These include their dielectric breakdown field strength (affects the withstand voltage), mobility (affects the operating speed), and thermal conductivity (affects reliability). If we can develop a device that brings out those excellent characteristics, we can realize power semiconductors with even higher performance.　　SiC-based MOSFETs and diodes have already been commercialized. They are being used in electric vehicle (EV) motor drive inverters, DC/AC converters in solar power generation power conditioners, and other equipment. GaN-based HEMT*3 have also already been commercialized. They are now being used in AC converters for ultra-small PCs, chargers for smartphones, and other equipment.　　*3: A High Electron Mobility Transistor (HEMT) is a Field Effect Transistor that enables high-speed switching by joining semiconductors with differing properties to induce electrons with high mobility.　　Evolution of Capacitors, Inductors, and Other Equipment Is Essential to Draw out the Potential of SiC and GaN　　It is not possible to draw out the full outstanding potential of power semiconductors made based on new materials simply by replacing the Si-based devices in existing power electronics circuits. This is because the other semiconductor ICs, passive components, and even the control software that comprise power electronics circuits have been developed and selected on the assumption they would be used in Si-based power semiconductors. It is necessary to newly re-develop and re-select these peripheral components as well to effectively utilize new material-based power semiconductors.　　Fig. 2: Example of an AC/DC converter circuit utilizing a GaN-based power semiconductor used in data center servers and other technologies　　For example, numerous GaN HEMTs are being used in AC/DC converter circuits that have adopted GaN HEMTs recently introduced to lower power consumption in the power supplies of data center servers (Fig. 2). It is possible to improve the switching frequency (operating frequency) of power electronics circuits by utilizing the features of GaN HEMTs in that they enable high-speed switching at high voltages. The reactance value of capacitors embedded into circuits and inductors in reactor signal processing circuits can be lower in circuits with a high operating frequency. In general, low reactance components have a small size. Therefore, it is possible to downsize the circuit board and to improve the power density. Similarly, introducing SiC MOSFETs even in inverter circuits which drive EV motors and other components enables the downsizing of peripheral components and also allows the overall inverter circuits to be made smaller and more lightweight.　　On the other hand, a high level of noise may arise from high-voltage and high-speed switching power supplies. There is a possibility that noise may then adversely affect the operation of the peripheral equipment. Power supplies comprising power semiconductors made with SiC and GaN switch at an even higher frequency. Therefore, the risk of noise occurring further increases. Accordingly, stricter noise suppression is required than when using existing power electronics circuits. At that time, there is a need to use noise suppression components designed to be applied to high-voltage, large-current, and high-frequency circuits rather than those for conventional circuits.　　In addition, there is also a need for small transformers that operate at even higher frequencies for transformers that are particularly heavy components even among passive components. Low profile planar transformers and other components have already been developed and launched onto the market under the assumption that they will be used in SiC- and GaN-based power semiconductors.　　Attention Focusing on the Evolution of Peripheral Components in Addition to Power Semiconductors　　Various types of semiconductors, not limited to power semiconductors, have been made based on Si up to now. Therefore, many existing electronic components have been developed under the implicit assumption that they will be used by being combined with Si-based semiconductors. It may become necessary to develop new products to suit the new technical requirements instead of simply searching for even better products among existing components to maximize the effect of introducing power semiconductors made with new materials.　　In general, Si-based power semiconductors tend to operate at lower speeds the greater the voltage and current they can handle (Fig. 3). That is the reason why there are not enough small capacitors and reactors that can handle high voltages and large currents. Moreover, there is a trend to simplify the heat dissipation system and to reduce the size, weight, and cost for SiC-based power semiconductors that can operate stably under high temperatures. In these cases, the passive components also need to have a guaranteed high reliability under a high-temperature environment.　　The introduction of new materials in the power semiconductor field is a major move to update the electrical and electronic ecosystem that has been optimized to Si materials for more than 50 years. Therefore, we also want to pay a great deal of attention to the evolution of peripheral electronic components optimized for new materials.
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Release time：2023-11-22 14:42 reading：1930 Continue reading>>
ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of <span style='color:red'>GaN</span> Devices
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ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

　　ROHM has developed a gate driver IC - the BD2311NVX-LB. It is optimized for GaN devices and achieves gate drive speeds on the order of nanoseconds (ns) - ideal for high-speed GaN switching. This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance. The result: fast switching with a minimum gate input pulse width of 1.25ns that contributes to smaller, more energy efficient, higher performance applications.　　In recent years, improving power conversion efficiency while reducing the size of power supply units in server systems have become important factors as the number of IoT devices continues to grow. This requires further advancements in the power device sector. At the same time, LiDAR, which is used not only for autonomous driving but also for monitoring industrial equipment and social infrastructure, demands high-speed pulsed laser light to further increase recognition accuracy.　　As these applications require the use of high-speed switching devices, in conjunction with the release of GaN devices, ROHM developed an ultra-high-speed gate driver IC that maximizes GaN performance. Going forward, ROHM continues to release smaller WLCSP products to support greater miniaturization.　　As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver. On top, the optimum GaN device can be selected by adjusting the gate resistance based on application requirements. ROHM also offers a lineup of GaN devices under the EcoGaN™ name - contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance. The gate driver BD2311NVX-LB with the unique gate overvoltage suppression feature - when used with ROHM's EcoGaN™ products - further simplifies the design and enhances application reliability.　　Professor Yue-Ming Hsin, Department of Electrical Engineering, National Central University, (Taiwan)　　“GaN devices are expected to be materials that can demonstrate performance in the high-frequency range more than silicon. In power switching applications such as DC-DC and AC-DC converters, and in LiDAR applications, the performance of GaN devices can contribute to smaller, more energy-efficient, and higher performance applications.　　On the other hand, to demonstrate the performance of GaN devices, gate driver IC that enable high-speed switching while taking into account the low drive voltage of GaN HEMTs are essential. Therefore, we turned our attention to ROHM, which aims to maximize the performance of GaN devices by developing optimized gate drive technology. Professor Yu-Chen Liu (National Taipei University of Technology) and Professor Chin Hsia (Chang Gung University), who are working together on the same project, tested ROHM’s driver IC, the BD2311NVX.　　The results showed that BD2311NVX had shorter rise time and lower ringing at 1MHz switching frequency for DC-DC converter compared to other driver ICs.　　The reduced rise time of this driver IC will help maximize the reduction in switching losses, which is an advantage of GaN. We are also looking forward to ROHM's GaN solutions, which have strengths in analog technologies in power supplies and drivers.”　　LiDAR Application Example　　Product Lineup
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Release time：2023-11-09 16:07 reading：1860 Continue reading>>
Infineon announces completion of acquisition of <span style='color:red'>GaN</span> Systems
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Infineon announces completion of acquisition of GaN Systems

　　Infineon Technologies AG recently announced the closing of the acquisition of GaN Systems Inc. (“GaN Systems”). The Ottawa-based company brings with it a broad portfolio of gallium nitride (GaN)-based power conversion solutions and leading-edge application know-how. All required regulatory clearances have been obtained and GaN Systems has become part of Infineon effective as of the closing.　　“GaN technology is paving the way for more energy-efficient and CO 2-saving solutions that support decarbonization,” said Jochen Hanebeck, CEO of Infineon. “The acquisition of GaN Systems significantly accelerates our GaN roadmap and further strengthens Infineon’s leadership in power systems through mastery of all relevant power semiconductor technologies. We welcome our new colleagues from GaN Systems to Infineon.”　　Infineon now has a total of 450 GaN experts and more than 350 GaN patent families, which expands the company’s leading position in power semiconductors and considerably speeds up time-to-market. Both companies’ complementary strengths in IP and application understanding as well as a well-filled customer project pipeline put Infineon in an excellent position to address various fast-growth applications.　　On 2 March 2023, Infineon and GaN Systems announced that the companies had signed a definitive agreement under which Infineon would acquire GaN Systems for US$830 million. The acquisition, an all-cash transaction, was funded from existing liquidity.
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Release time：2023-10-27 10:48 reading：1588 Continue reading>>
Renesas Announces New Organizational Structure to Accelerate Next Phase of Growth
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Renesas Announces New Organizational Structure to Accelerate Next Phase of Growth

　　Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new organizational structure and leadership team appointments. These changes will take effect January 1, 2024, and will support the company in its next phase of growth and development to become the leader in embedded semiconductor solutions.　　1. Establishment of four technology-based product groups　　Renesas is establishing a technology-based organization designed to provide more comprehensive and tailored solution offerings. This is aimed at effectively addressing the converging needs of customers and markets by leveraging our embedded processing, analog, power, and connectivity expertise to create complete solutions. The new organization will also enable the company to capitalize on the scale advantages by fostering more cross selling opportunities and broader customer coverage. As part of these changes, Renesas’ businesses will be restructured into four new product groups.　　Analog & Connectivity　　Davin Lee, currently Vice President of Advanced Analog Division, will assume the role of Senior Vice President and General Manager of Analog & Connectivity. Under Davin’s leadership, the group will be responsible for analog products as well as the company’s vast portfolio of connectivity products.　　Embedded Processing　　Toshihiko Seki, currently Vice President of MCU Device Solution Division, will assume the role of Senior Vice President and General Manager of Embedded Processing. He will be responsible for Renesas’ entire standard catalog embedded processing products. The group is designed to accelerate the company’s efforts to provide more catalog products and solutions to go deeper and broader with new and existing customers.　　High Performance Computing　　Vivek Bhan, who currently holds the position of Senior Vice President and Co-General Manager of High Performance Computing, Analog and Power Solutions Group, will assume the role of Senior Vice President and General Manager of High Performance Computing. He will be responsible for the company’s custom and application-specific high computing products.　　Power　　Chris Allexandre who currently serves as Senior Vice President, Chief Sales & Marketing Officer (CSMO) and Head of the Global Sales and Marketing Unit will take on a new role as Senior Vice President and General Manager of Power. Chris will be responsible for overseeing Renesas’ power management and discrete products and executing the company’s power strategies.　　2. Establishment of new Software & Digitalization team and centralization of Operations, Engineering and key foundational organizations　　In addition to the establishment of four product groups, Renesas has also taken steps to streamline its organizational structure by establishing new groups of functions. The new organizations will serve as centralized foundations across all lines of business to better support customers, enhance performance and add value.　　Software & Digitalization　　As the company aims to transform the way customers design solutions through an innovative cloud-based platform, Renesas has recently welcomed Buvna Ayyagari as Vice President of the new Software & Digitalization organization to spearhead this effort. Buvna will be responsible for driving Renesas’ unified vision for software and digitalization, ensuring they become a powerful differentiator for the company.　　Buvna brings rich and multi-disciplinary expertise across the semiconductor industry from Applied Materials, Synopsys and Intel. She held leadership positions in Engineering, Field Applications Engineering, Marketing, Pre- and Post-sales Customer Support and drove products from definition to high volume. Buvna has experiences in leading digital transformations and has helped to build a team from the ground up to define a software platform, making her well-equipped to continue to drive Renesas’ excellence in software and digitalization.　　Operations　　Renesas is accelerating efforts to drive operational excellence to improve service, quality and profitability. Dr. Sailesh Chittipeddi, currently Executive Vice President, General Manager of Embedded Processing, Digital Power and Signal Chain Solutions Group, will take on a new role to oversee the new operations organization. This brings Renesas’ entire manufacturing, supply chain and procurement into a single organization chartered to lead the company's operational and strategic initiatives to provide exceptional customer experiences.　　Engineering　　Renesas is creating a centralized engineering organization to solidify Renesas’ engineering foundation, from product to test engineering. This new organization will direct the development and execution of the company’s technology and product roadmaps. Takeshi Kataoka, Senior Vice President and Co-General Manager of High Performance Computing, Analog and Power Solutions Group, will newly head this Engineering organization.　　Quality Assurance　　Takeshi Kataoka will also oversee the Quality Assurance function as Senior Vice President and Head of Engineering and Quality Assurance. His experience and profound expertise in leading Renesas’ automotive semiconductor business will help the company to continue to assure supreme quality levels throughout its products and solutions.　　Sales & Marketing　　Bobby Matinpour, who currently serves as Vice President of Global Strategic Vertical & Regional Sales, will succeed Chris Allexandre in the role of Senior Vice President, CSMO and Head of Sales & Marketing.　　These leaders in addition to leaders of each of four product groups will report directly to the CEO. This will allow them to have greater influence on Renesas’ strategy and execution, while enhancing accountability.　　Hiroto Nitta will retire from his role of Senior Vice President of Information Technology. In addition to his current role, Nitta served multiple managerial positions at Renesas including Vice President and Deputy General Manager of Global Sales Units as well as Senior Vice President and Deputy General Manager of Broad-Based Solution Business Unit. He also served as Senior Vice President and Head of SoC Business in the IoT and Infrastructure Business. Renesas appreciates Nitta’s work over the past 40 years helping the company advance its product leadership and wish him and his family all the best for the future.　　As a result of the organizational changes, Roger Wendelken, who has been serving as Senior Vice President and Head of Embedded Microcontroller in the Embedded Processing, Digital Power and Signal Chain Solutions Group will leave Renesas. Roger joined Renesas in 2017 following the Intersil acquisition. He contributed to Renesas as leader of worldwide sales for the broad-based solution business. In his current position, Roger played an instrumental role in releasing the ARM-based RA microcontrollers. The company is grateful to Roger for his significant achievements at Renesas.　　Andrew Cowell will retire from his role of Senior Vice President and Head of Performance Power. Since joining Renesas in 2017 from Intersil, Andrew guided the foundation in strengthening the growth and market share gains of the digital multiphase controllers and smart power stages for the infra core power businesses. Renesas thanks Andrew for his remarkable contribution and wishes him all the best for his retirement.　　Hiroto Nitta, Roger Wendelken and Andrew Cowell will assist with the transition and leave Renesas by the end of the year.
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Release time：2023-10-25 11:13 reading：2679 Continue reading>>

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