Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in <span style='color:red'>AI</span> Data Centers, Industrial and Charging Systems
  Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.  The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.  Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.  Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.  “The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”  Unique d-mode Normally-off Design for Reliability and Easy Integration  Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.  GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.  Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
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Release time:2025-07-04 15:04 reading:221 Continue reading>>
Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with <span style='color:red'>AI</span> Acceleration
Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy  Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.  Designed for Edge/Endpoint AI  The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.  Advanced Technology  The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.  “There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”  “The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”  “It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”  Robust, Optimized Peripheral Set for AI  Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.  The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.  New RUHMI Framework  Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.  Advanced Security Features  The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.  Ready to Use Solutions  Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.  Key Features of the RA8P1 MCUs  Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)  Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core  Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface  Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers  Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management  Packages: 224BGA, 289BGA
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Release time:2025-07-04 14:56 reading:220 Continue reading>>
ROHM Introduces a New MOSFET for <span style='color:red'>AI</span> Servers with Industry-Leading* SOA Performance and Low ON-Resistance
  ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.  As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.  The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.  Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.  ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.  Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.  Application Examples  • 48V AI server systems and power supply hot-swap circuits in data centers  • 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)  • Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)  • UPS and emergency power systems (battery backup units)  Online Sales InformationSales Launch Date: May 2025  Pricing: $5.50/unit (samples, excluding tax)  Online Distributors: DigiKey™, Mouser™ and Farnell™  The products will be offered at other online distributors as they become available.  Applicable Part No: RY7P250BM  EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.  Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.  TerminologyHot-Swap Circuit  A circuit that enables components to be inserted or removed while the system remains powered on.  It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.  Power MOSFET  A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.  SOA (Safe Operating Area)  The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.  Low ON-resistance (RDS(on))  The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.  Inrush Current  A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time:2025-07-03 14:52 reading:186 Continue reading>>
Redefining Smart Living: Fibocom FG390 with MediaTek T930 Brings <span style='color:red'>AI</span> to the Heart of Homes and SMBs
  As AI technology rapidly advances and smart devices proliferate, households and small to medium-sized businesses (SMBs) are seeking intelligent, secure, and efficient “digital housekeepers”. These AI-powered ecosystems must enable seamless device coordination, centralized data management, and real-time decision-making across scenarios like smart security, remote work, and digital infrastructure management.  To address the growing demand, Fibocom, in collaboration with MediaTek, introduces the FG390, a next-generation 5G module powered by the MediaTek T930 platform. Combining superior cellular connectivity, integrated AI capabilities, and deep insight into smart home and enterprise networking, FG390is set to become a key enabler in building AI-driven home ecosystems and intelligent control hubs. The module helps bridge data silos and optimize operational efficiency amid ongoing digital transformation.  Exceptional Cellular Performance for Enhanced 5GExperience  FG390 is powered by MediaTek’s advanced T930 platform, built on a 4nm process and integrating the MediaTek M90 5G modem with a quad-core ArmCortex-A55 CPU. Delivering exceptional cellular performance, it supports6-carrier downlink aggregation (6CC CA) and 5-layer 3Tx uplink over Sub-6GHz 5GNR, reaching peak speeds of 10 Gbps downlink and 2.8 Gbps uplink for ultra-fast, low-latency connectivity. Ideal for bandwidth-intensive applications such as multi-stream 8K video or immersive AR/VR experiences, FG390 also features 8Rx reception with 200MHz bandwidth to enhance spectral efficiency and ensure stable coverage, even at cell edges.  Next-Gen Smart Home Hub with Advanced Personalization  As 5G and AI technologies converge, the CPE (Customer Premises Equipment) is emerging as the central hub of the smart home. Powered by FG390, this hub gains advanced sensing capabilities, broad compatibility with smart devices—including support for the Matter protocol—and deeply integrated AI algorithms. Together, these features enable real-time adaptation to environmental changes and user behavior, delivering a more personalized, seamless, and comfortable smart living experience.  AI Services Spark New Commercial Potential  What truly differentiates the FG390 is its deep AI integration alongside exceptional connectivity. Equipped with a dedicated NPU, it functions as an intelligent in-home AI agent, delivering context-aware services to end users. Designed to support edge-cloud collaborative AI models, such as those from Open AI and DeepSeek, the FG390 empowers AI-enabled FWA (Fixed Wireless Access) solutions for both consumer and enterprise markets. Its intuitive AI SDK enables flexible service expansion for FWA users, while mobile operators can leverage it to unlock new AI-driven value-added services and monetization channels. Additionally, the module supports NAS integration for centralized data management and optimized AI resource allocation, enhancing productivity and setting the stage for next-generation smart applications.  “We have a long history of working together with Fibocom to reach significant FWA milestones, and our collaboration on the next-generation T930 5G FWA platform will help to drive growth of the FWA ecosystem,” said Evan Su, General Manager of Wireless Communications at MediaTek. “With this partnership in mind, we are pushing forward by creating a higher focus on new products that are rich in features and innovative design, while delivering cutting-edge solutions and exceptional service to customers around the world.”  “Designed to meet the evolving needs of the FWA market over the next 3–5 years, we’re pleased to collaborate with MediaTek to launch the FG390 5G FWA module,” Added Simon Tao, VP of MBB Product Management Dept, Head of MBB BU at Fibocom. “Powered by the full capabilities of the MediaTek T930 platform and 5G Release 18, FG390addresses the connectivity needs of large-scale smart home and SMB deployments with high gain, low latency, and multi-OS compatibility. Fibocom remains dedicated to advancing 5G eMBB modules with superior cellular and AI performance. Leveraging powerful NPUs, we’ll work closely with our partners to further enable AI-driven applications across smart homes, offices, and cities, fully embracing the AI era. Together with MediaTek, we’ll continue to innovate across products, technologies, and applications to shape a smarter future.”
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Release time:2025-06-30 15:02 reading:266 Continue reading>>
ROHM Builds the Future of <span style='color:red'>AI</span> with Optimized Solutions for NVIDIA 800V Architecture
  As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.  ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.  A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.  Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.  ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.  Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.  Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.  The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.
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Release time:2025-06-13 16:52 reading:324 Continue reading>>
Fibocom Releases 5G <span style='color:red'>AI</span> Mobile Hotspot Solution, Unlocking Intelligent Future for Mobile Broadband Devices
  As 5G and AI technologies continue to converge, demand is growing for stable, high-speed, and intelligent mobile networks across various scenarios—from business travel and outdoor operations to global connectivity. Fibocom’s latest 5G AI Mobile Hotspot solution redefines the mobile broadband experience with cutting-edge technology and forward-thinking design.  Powered by Qualcomm’s advanced 4nm QCM4490 platform, the solution combines smartphone-grade ultra-low power consumption with precision circuit design. This results in a powerful yet energy-efficient platform that balances high performance with cost optimization.  In terms of connectivity, the solution supports 3GPP Release 16 and NR 2CC 120MHz. It delivers a downlink speed of up to 2.3 Gbps in SA mode and 2.5 Gbps in NSA mode. Customers can flexibly configure the solution with either AX3600-based Wi-Fi 6E or BE5800-based Wi-Fi 7 options. It supports dual-band simultaneous (DBS) modes of 2.4GHz+5GHz or 2.4GHz+6GHz, as well as high-band simultaneous (HBS) mode of 5GHz+6GHz.  Tailored for Mobile Hotspot applications, the solution runs an optimized Android 13 OS, significantly boosting system performance while reducing power consumption. With USB 3.1 support and a theoretical data transfer rate of up to 5 Gbps, it’s well-suited not only for 5G Mobile Hotspot devices but also for other mobile broadband terminals such as USB dongles.  Crucially, the solution leverages the QCM4490’s heterogeneous computing architecture, featuring a robust 8-core CPU (2x Cortex-A78 @ 2.4GHz + 6x Cortex-A55 @ 2.0GHz) and integrated Adreno 613 GPU (@ 1010MHz). Compared to GPU-less solutions, this powerful combination enables efficient on-device AI processing, expanding the possibilities for more edge intelligence applications. Internal tests have demonstrated the successful deployment of large-scale open-source AI models such as Qwen-1.8 B-Chat.  From business office to global travel these mobile broadband applied scenarios, Fibocom’s cost-effective 5G AI Mobile Hotspot solution—with optional Wi-Fi 7 support—paves the way for a new era of AI-enhanced mobile broadband.
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Release time:2025-06-06 15:38 reading:365 Continue reading>>
T<span style='color:red'>AI</span>YO YUDEN: World's First Multilayer Metal Power Inductor Capable of Withstanding Temperatures up to 165°C
  TAIYO YUDEN CO., LTD. has commercialized four items, including the multilayer metal power inductor MCOIL™ "LACNF2012KKTR24MAB" (2.0 x 1.25 x 1.0 mm, maximum height value shown), which complies with the "AEC-Q200" reliability qualification test standard for passive automotive components. Through advancements made in our proprietary metal materials and multilayer construction methods, we have achieved an upper operating temperature limit of 165°C for a multilayer metal power inductor, a world’s first *1 .  These products are used as choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.  By extending the upper operating temperature limit range of our conventional product "LCCNF2012KKTR24MAD" (operating temperature range: -55°C to +150°C) to 165°C, these new products are able to contribute to the miniaturization and performance enhancement of power supply circuits by enabling high-density mounting in high-temperature environments such as in automobiles.  Mass production of these products began at our subsidiary, WAKAYAMATAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan), in April 2024. Samples are available for 50 yen per unit.  The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller and thinner in order to arrange devices in highly dense configurations and integrate them into single modules. Components mounted at high densities become more susceptible to the effects of heat, as their reduced volumes makes it more difficult for the heat generated by the components to dissipate. Furthermore, since ECUs are increasingly being installed in engine compartments—a high temperature environment—on-board electronic components must be able to withstand high temperatures.  To address these challenges, TAIYO YUDEN further improved the reliability of the MCOIL™ LCCN series of multilayer metal power inductors, which had the advantage of being smaller and thinner, and launched the AEC-Q200 certified LACN series which provides an extended operating temperature range of - 55°C to +165°C.  TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.  *1 As of May 30, 2024, according to TAIYO YUDEN study.  ■Application  Choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.  ■Characteristics  *2 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)  *3 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)  *4 The rated current is the DC current value that satisfies both of current value saturation current value and temperature rise current value.  * Derating of rated current is necessary depending on the ambient temperature. Please see our website below for detailed specifications
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Release time:2025-05-30 14:21 reading:303 Continue reading>>
T<span style='color:red'>AI</span>YO YUDEN Expands Lineup of Multilayer Metal Power Inductors for Smartphones
  TAIYO YUDEN CO., LTD. has begun mass production of three products, including the LSCND1412FETR47ME (1.4 x 1.2 x 0.65 mm; maximum height shown), in its MCOIL™ LSCN series of multilayer metal power inductors.  These power inductors are for use as choke coils in the power circuits of smartphones. Retaining the same form factor as our previous product "LSCND1412FETR47MC" (1.4 x 1.2 x 0.65 mm), the DC superposition allowable current of our new "LSCND1412FETR47ME" has been increased by 20% to 3.6 A (previously 3.0 A), and its DC resistance has been reduced by 10% to 38 mΩ (previously 42 mΩ). These improvements contribute to boosting the performance of power supply circuits in smartphones, which are becoming increasingly sophisticated and multifunctional.  Mass production of these products commenced at our subsidiary WAKAYAMATAIYO YUDEN CO. LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan). Samples are available for 50 yen per unit.  Technology Background  Smartphones are becoming increasingly sophisticated, with capabilities such as AI-based image and video editing, as well as voice and text translation. At the same time, there is demand for greater efficiency in order to keep their body small, and achieve long operating times with limited battery capacity. To achieve both high performance and high efficiency, a smartphone’s processor operates at high speeds with low voltage and high current, and employs a multi-core configuration where each core is equipped with its own power supply circuit, allowing it to improve both its processing power and efficiency by switching the cores used depending on load. This trend in power supply circuits has become particularly pronounced in cutting-edge smartphones, which require both high performance and high efficiency, and in recent years has led to an increase in the adoption of small and thin low-inductance power inductors capable of handling large currents.  To address these needs, at TAIYO YUDEN we have been using metallic magnetic materials with high DC superposition characteristics to optimize the design and other aspects of our MCOIL™ LSCN series multilayer metal power inductors—which have the advantage of allowing them to be made more compact and thinner—commercializing three products, including “LSCND1412FETR47ME,” which deliver 20% greater DC superposition allowable current and 10% smaller DC resistance compared to our previous products.  In response to market needs, we will continue to expand and improve our product lineup with higher functionality and reliability, as well as smaller and thinner products.  ■ Application  For use as a choke coil for power circuits in smartphones and other devices.  ■Characteristics  *1 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)  *2 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)  *3 The rated current value is following either Idc1(max) or Idc2(max), which is the lower one.  * “MCOIL” is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.  * The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.
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Release time:2025-05-30 13:51 reading:349 Continue reading>>
T<span style='color:red'>AI</span>YO YUDEN Commercializes LCQPB Series of Power Inductors for Automotive Application
  TAIYO YUDEN CO., LTD. has commercialized the new LCQPB series of wire-wound ferrite power inductors, which have AEC-Q200 qualification for automotive passive components.  The LCQPB series power inductors are designed for use as choke coils and noise filters in DC-DC converters in power circuits for automotive body and information systems.  TAIYO YUDEN previously released the LCEN series and LCCN series of metal power inductors made from metallic magnetic substances for automobile application and the LCXN series and LCXH series of ferrite power inductors. To these, we add the new LCQPB series to give our customers more choice by substance and structure and a high degree of freedom in design.  The LCQPB series inductors have been manufactured by our overseas subsidiary, TAIYO YUDEN (PHILIPPINES), (Lapulapu City, Cebu) since March 2025. Samples are available for 50 yen per unit.  Technology Background  The advancements that we have seen in recent years in electronic controls in vehicles, as typified by ADAS units, have led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. In order to miniaturize power supply circuits, engineers demand inductors with specific properties that allow high-density mounting with a high degree of freedom in design and noise suppression by frequency.  Therefore, TAIYO YUDEN has newly commercialized the LCQPB series, which complies with AEC-Q200. The LCQPB series inductors have a frameless structure that results in a small footprint. The new LCQPB series, together with our other series of inductors designed for automotive application, give our customers more choice by substance and structure and a high degree of freedom in design.  TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.  ■ Application  The LCQPB series power inductors are applicable as choke coils and noise filters in DC-DC converters in power circuits for automotive body and information systems.
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Release time:2025-04-10 13:18 reading:395 Continue reading>>
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and <span style='color:red'>AI</span> Servers
  ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.  The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.  Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.  To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.  The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.  All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.  Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.  Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.  Product Lineup  EcoMOS™ Brand  EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.  Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.  EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.  Application Examples  ・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies  ・AC-DC conversion circuits for 48V AI server power supplies  ・48V industrial equipment power supplies (i.e. fan motors)  Terminology  Low ON-Resistance (RDS(on))  The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.  SOA (Safe Operating Area) Tolerance  The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.  Power MOSFET  A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.  Hot-Swap Controller (HSC)  A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.  Inrush Current  A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
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Release time:2025-04-10 13:10 reading:452 Continue reading>>

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