T<span style='color:red'>AI</span>YO丨Multilayer Metal Power Inductor Rated at 165°C for Automobiles 1608 Size Added to the Lineup
Trade news

TAIYO丨Multilayer Metal Power Inductor Rated at 165°C for Automobiles 1608 Size Added to the Lineup

　　TAIYO YUDEN CO., LTD. has commercialized 14 items, including the multilayer metal power inductor MCOIL™ "LACNF1608KKT1R0MAB" (1.6 x 0.8 x 1.0 mm, maximum height shown), which complies with the "AEC-Q200" certification reliability test standard for passive automotive components.　　The new product is approximately 49% smaller than our previous product, the "LACNF2012KKT1R0MAB" (2.0 x 1.25 x 1.0 mm), and can contribute to the miniaturization and higher performance of power supply circuits installed in automobiles.　　These products are used as choke coils in DC-DC converters used in automotive engine control systems such as ECUs, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　Mass production of this products began at our subsidiary, WAKAYAMA TAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture), in December 2025. Samples are available for 50 yen per unit.　　Background　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller in order to arrange devices in highly dense configurations and integrate them into single modules. Furthermore, since ECUs are increasingly being installed in engine compartments--a high temperature environment--on-board electronic components must be able to withstand high temperatures.　　In response, TAIYO YUDEN has added a new 1608 size to its MCOIL™ LACN series of multilayer metal power inductors, which boast the advantages of being smaller and thinner, and having an operating temperature range of -55°C to +165°C. Our proprietary metal materials are bonded to each other by an oxide film using heat treatment, ensuring insulation and providing high heat resistance and thermal conductivity. Thanks to these features, the product exhibits stable characteristics, is able to withstand high temperatures, and achieves high reliability, even in devices used in harsh temperature environments such as automotive applications.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　■Application　　Choke coils in DC-DC converters used in automotive engine control systems such as ECUs, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters　　* Derating of rated current is necessary depending on the ambient temperature.　　Please see our website below for detailed specifications.　　LACN series　　https://ds.yuden.co.jp/TYCOMPAS/ut/specificationSearcher?cid=L&u=M&Seri=LACN_A&SR2=LM%2CMP　　LCCN series　　https://ds.yuden.co.jp/TYCOMPAS/ut/specificationSearcher?SR6-L=AP2&Ind=1000.0%3A1500.0&Current_Srch=%3A1.9&pg=1&pn=L*CNF&cid=L&u=M　　* "MCOIL" is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.　　* The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.
Key word：
Release time：2026-01-08 15:22 reading：275 Continue reading>>
Renesas丨Silicon to Software: RoX <span style='color:red'>AI</span> Studio Advances Software-Defined Vehicle Design
Trade news

Renesas丨Silicon to Software: RoX AI Studio Advances Software-Defined Vehicle Design

　　Software-defined vehicles (SDV) are upending traditional automotive design. While vehicle development is still highly iterative, the industry is in the throes of a historic transformation where manufacturers are compressing once-sequential hardware-to-software design cycles into more efficient software-first design flows.　　This so-called shift-left approach is exemplified by Renesas' adoption of digital tools and AI models as part of a broader digitalization and software strategy aimed at accelerating design and innovation, while simultaneously optimizing R&D efficiency. In the automotive sector, the evolution is driven by practical considerations given that a typical vehicle now embeds more than 100 million lines of code. Heavier software dependence requires continuous updating and deployment, multi-supplier integration, design validation at scale, and reflects an ecosystem where OEMs insource more software and chipmakers ship platforms, not parts. Renesas anticipated these changes with the scalable R-Car hardware and software development platform. R-Car supports the transition of E/E designs to more central processing architectures, including advanced driver assistance systems (ADAS) and autonomous vehicle design. Last year, we added R-Car Open Access (RoX), an extended platform for SDVs that provides a pre-integrated, out-of-the-box environment with hardware, operating systems, software stacks, and tools to accelerate next-generation vehicle development.　　R-Car leverages a heterogeneous architecture that features Arm® CPUs with multiple hardware accelerators. RoX includes a common set of toolchains that allows software reuse across electronic control units (ECUs) for ADAS, in-vehicle information (IVI) systems, and centralized data gateways. By enabling cloud-native development and customized design simulation, the RoX platform expands SDV lifecycle support through continuous updates that align with a modern value chain where OEMs and service providers increasingly co-own software.　　Introducing RoX AI Studio: Cloud-Native MLOps on R-Car　　Many of our automotive customers have embraced R-Car and the Renesas RoX platform as a means to accelerate SDV development and manage the complexity of in-vehicle embedded processing systems. In doing so, we found a persistent "lab-to-road" gap between how designers employ AI training in the cloud and how they deploy new features in automotive SoCs.　　RoX AI Studio, a new extension of the original RoX platform, closes that gap. The machine learning operations (MLOps) tool lets teams remotely evaluate AI models using a managed cloud control plane that connects engineers with hardware-in-the-loop (HIL) device farms so they can profile real-world performance without waiting for scarce lab boards. Continuous integration and deployment (CI/CD) keeps the full toolchain current, so improvements arrive automatically with no local installs required. The result is faster iteration, fewer surprises, and a direct line from model training to road-ready, HIL model validation.　　What Is MLOps – and How Does RoX AI Studio Enable It for SDVs?　　To define MLOps, it's important to understand what preceded it. MLOps builds on a concept called DevOps – short for development operations – in which tools and best practices are combined to shorten software design lifecycles. This is achieved by breaking down silos between development and IT operations teams to help them collaborate more effectively.　　DevOps governs deterministic integrate/test/deploy processes for conventional software code and services. MLOps adds AI data and models, where development lifecycles are iterative, experiments branch, and choices must be tracked, compared, and promoted. By anchoring model validation on R-Car silicon, RoX AI Studio becomes the bridge between model-in-training and model-in-production, turning the art and science of AI model development into repeatable and scalable engineering operations with targeted KPIs.　　RoX AI Studio operationalizes automotive MLOps for SDVs in several ways:　　Model Intake and Registry: Renesas provides a curated model zoo that includes many popular AI models. Users can also use a bring your own model (BYOM) approach to ingest their own custom or proprietary models and receive a quick performance evaluation on R-Car silicon.　　Automated Updates: Orchestration workflows in our MLOps tool simplify the user experience by abstracting model processing for silicon deployment, while CI/CD toolchains automate the release and deployment of the latest version of the AI toolchain for R-Car SoCs.　　HIL Evaluation: MLOps in the cloud connects to a physical lab hosting an array of R-Car silicon devices that run inference experiments on demand. This allows remote validation of AI models without requiring physical co-location with the hardware.　　Results and Artifacts: Collects metrics and logs from inference experiments and aggregates them as metric comparison tables and plots.　　Scaled Experimentation: Runs multiple models/variants in parallel to compare accuracy vs. latency under real-world operating constraints.　　Flexible Deployment: Will allow designers to begin on the Renesas cloud for speed and then mirror the same stack later in a private cloud when silicon is more widely available for individual projects.　　RoX AI Studio Is Advancing Automotive's "Shift Left" Strategy　　Automotive timelines are compressing. Manufacturers are moving from three to four-year platform development cycles to one to two-year cycles augmented by ongoing over-the-air (OTA) updates to provide on-road product feature enhancements. That means design teams adopting the shift-left philosophy need to test hardware and software earlier using target (remote or virtual) devices.　　That's a challenge for OEMs, many of which have invested heavily in AI model training and are striving to continuously improve their networks by deploying feature updates to their vehicles in the field. At the same time, shorter development cycles mean they must test many device options simultaneously – at scale and across multiple vectors – without over-investing in the wrong development path.　　When OEMs and Tier 1 suppliers use RoX AI Studio, they can quickly validate their devices by testing at scale and within the context of their specific MLOps network strategy. RoX AI Studio makes this practical by creating a simplified developer experience for managing cloud-to-lab infrastructure and automated workflows for pre-trained model deployment and evaluation on R-Car SoC targets. It runs experiments in parallel, as opposed to serially, and provides access to device farms that allow global teams to start development before boards arrive and continue at scale.　　For automotive OEMs, this means earlier starts and fewer late surprises, reusable software investments that move from cloud to vehicle, and a clean path to private-cloud deployment and virtual platforms that yield better results and shorten time to market.　　Platform Thinking for the Software-Defined Era　　Car makers designing SDVs are committed to developing hardware and software in parallel, and the market is converging on cloud-native machine learning tools – but with no universal MLOps winner yet.　　Renesas RoX AI Studio provides a standardized SDV design foundation and operationalizes AI development on that foundation by moving beyond DevOps to support a "one-stop studio" model. Together, the RoX platform and RoX AI Studio are enabling a shift-left culture change: validate earlier, iterate faster, deploy confidently.　　Renesas RoX AI Studio is currently available to select customers with a broad introduction planned in 2026.
Key word：
Release time：2025-12-31 17:27 reading：376 Continue reading>>
Renesas Fast-Tracks SDV Innovation with R-Car Gen 5 SoC-Based End-to-End Multi-Domain Solution Platform
Trade news

Renesas Fast-Tracks SDV Innovation with R-Car Gen 5 SoC-Based End-to-End Multi-Domain Solution Platform

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, is expanding its software-defined vehicle (SDV) solution offerings centered around the fifth-generation (Gen 5) R-Car family. The latest device in the Gen 5 family, the R-Car X5H is the industry’s first multi-domain automotive system-on-chip (SoC) manufactured with advanced 3nm process technology. It is capable of simultaneously running vehicle functions across advanced driver assistance systems (ADAS), in-vehicle infotainment (IVI), and gateway systems.　　Renesas has begun sampling Gen 5 silicon and now offers full evaluation boards and the R-Car Open Access (RoX) Whitebox Software Development Kit (SDK) as part of the next phase of development. Renesas is also driving deeper collaboration with customers and partners to accelerate adoption. At CES 2026, Renesas will showcase AI-powered multi-domain demonstrations of the R-Car X5H in action.　　The R-Car X5H leverages one of the most advanced process nodes in the industry to offer the highest level of integration, performance and power efficiency, with up to 35 percent lower power consumption than previous 5nm solutions. As AI becomes integral to next-generation SDVs, the SoC delivers powerful central compute targeting multiple automotive domains, with the flexibility to scale AI performance using chiplet extensions. It delivers up to 400 TOPS of AI performance, with chiplets boosting acceleration by four times or more. It also features 4 TFLOPS equivalent* of GPU power for high-end graphics and over 1,000k DMIPS powered by 32 Arm® Cortex®-A720AE CPU cores and six Cortex-R52 lockstep cores with ASIL D support. Leveraging mixed criticality technology, the SoC executes advanced features in multiple domains without compromising safety.　　As hardware and software become more tightly integrated early in development to support complex E/E architectures, Renesas is adding new capabilities to the RoX development platform. RoX dramatically simplifies development by combining all essential hardware, operating systems, software and tools required to rapidly develop next-generation vehicles with seamless software updates.　　Accelerating Automotive Innovation with an Open, Scalable RoX Whitebox SDK　　To accelerate time-to-market, Renesas now offers the RoX Whitebox Software Development Kit (SDK) for the R-Car X5H, an open platform built on Linux, Android, and XEN hypervisor. Additional support for partner OS and solutions is available, including AUTOSAR, EB corbos Linux, QNX, Red Hat and SafeRTOS. Developers can jumpstart development out of the box using the SDK to build ADAS, L3/L4 autonomy, intelligent cockpit, and gateway systems. An integrated stack of AI and ADAS software enables real-time perception and sensor fusion while generative AI and Large Language Models (LLMs) enable intelligent human-machine interaction for next-generation AI cockpits. The SDK integrates production-grade application software stacks from leading partners such as Candera, DSP Concepts, Nullmax, Smart Eye, STRADVISION and ThunderSoft, supporting end-to-end development of modern automotive software architectures and faster time to market.　　“Since introducing our most advanced R-Car device last year, we have been steadfast in developing market-ready solutions, including delivering silicon samples to customers earlier this year,” Vivek Bhan, Senior Vice President and General Manager of High Performance Computing at Renesas. “In collaboration with OEMs, Tier-1s and partners, we are rapidly rolling out a complete development system that powers the next generation of software-defined vehicles. These intelligent compute platforms deliver a smarter, safer and more connected driving experience and are built to scale with future AI mobility demands.”　　“Integrating Renesas’ R-Car X5 generation series into our high-performance compute portfolio is a natural next step that builds on our existing collaboration,” said Christian Koepp, Senior Vice President Compute Performance at Bosch’s Cross-Domain Computing Solutions Division. “At CES 2026, we look forward to showcasing this powerful solution with Renesas X5H SoC, demonstrating its fusion capabilities across multiple vehicle domains, including video perception for advanced driver assistance systems."　　“Innovative system-on-chip technology, such as Renesas’ R-Car X5H, is paving the way for ZF’s software-defined vehicle strategy,” said Dr. Christian Brenneke, Head of ZF’s Electronics & ADAS division. “Combining Renesas’ R-Car X5H with our ADAS software solutions enables us to offer full-stack ADAS capabilities with high computing power and scalability. The joint platform combines radar localization and HD mapping to provide accurate perception and positioning for reliable ADAS performance. At CES 2026, we’ll showcase our joint ADAS solution.”　　First Fusion Demo on R-Car X5H with Partner Solutions at CES 2026　　Renesas will showcase the capabilities of the R-Car X5H for the first time through a series of invitation-only demos at CES 2026. For more information about how to attend this event, contact sales at: CES26_Info@lm.renesas.com.　　The new multi-domain demo upscales from R-Car Gen 4 to the next-generation R-Car X5H on the RoX platform, integrating ADAS and IVI stacks, RTOS, and edge AI functionality on Linux and Android with XEN hypervisor virtualization. Supporting input from eight high-resolution cameras and up to eight displays with resolutions reaching 8K2K, the platform delivers immersive visualization and robust sensor integration for next-generation SDVs. Combined with the RoX Whitebox SDK and production-grade partner software stacks, the platform is engineered for real-world deployment covering multiple automotive domains.　　Availability　　Renesas is shipping R-Car X5H silicon samples and evaluation boards, along with the RoX Whitebox SDK, to select customers and partners.
Key word：
Release time：2025-12-24 16:06 reading：477 Continue reading>>
ROHM launches wide SOA MOSFET for <span style='color:red'>AI</span> servers in compact 5×6mm package
Trade news

ROHM launches wide SOA MOSFET for AI servers in compact 5×6mm package

　　ROHM has developed the 100V power MOSFET - RS7P200BM - achieving industry-leading SOA in a 5060-size (5.0mm × 6.0mm) package. This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.　　The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.　　Therefore, ROHM has expanded its line-up of 100V power MOSFETs ideal for hot-swap circuits in AI servers to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher density mounting compared to the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8.0mm × 8.0mm size) package, which ROHM has released in May 2025.　　The new product achieves a low on-resistance (RDS(on)) of 4.0mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs.　　Mass production of the new product began in September 2025 (sample price: $5.5/unit, excluding tax).　　ROHM will continue to expand its product lineup for 48V power supplies, which are increasingly adopted in applications such as AI servers. By providing highly efficient and reliable solutions, we will contribute to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.　　Application Examples　　•48V system AI servers and data center power hot-swap circuits　　•48V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.)　　•Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　•UPS, emergency power systems (battery backup units)　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　・EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　SOA(Safe Operating Area)　　The voltage and current range within which a device can operate safely without damage. Operation beyond this safe operating area may cause thermal runaway or damage; therefore, consideration of the SOA is essential, particularly in applications where inrush current or overcurrent may occur.　　Hot-swap circuit　　The complete circuitry supports the hot-swap function, which enables the removal or insertion of components while the device's power supply remains active. Comprising MOSFETs, protective elements, and connectors, it suppresses inrush currents occurring during component insertion and provides overcurrent protection, thereby ensuring the safe operation of the system and connected components.　　Inrush Current　　The high current exceeds the rated current value that flows momentarily when switching on electronic equipment. Controlling this prevents damage to devices and stabilizes the system by reducing the load on components within the power supply circuit.　　On-resistance(RDS(on))　　The resistance value between the drain and source terminals when the MOSFET is in operation (on). The lower the value, the less power loss occurs during operation.
Key word：
Release time：2025-11-28 17:28 reading：557 Continue reading>>
T<span style='color:red'>AI</span>YO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for <span style='color:red'>AI</span> Servers
Trade news

TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers

　　TAIYO YUDEN CO., LTD. has commercialized and begun mass production of embeddable multilayer ceramic capacitor (MLCC) that achieves a capacitance of 22-μF in a 1005M size (1.0 x 0.5 mm).　　This ceramic capacitor is an MLCC designed for decoupling applications on IC power lines used in AI servers and other types of information devices.　　Components embedded in a board require high precision in terms of flatness of the external electrodes for connection to the circuit. With respect to this requirement, TAIYO YUDEN has commercialized an embeddable MLCC that achieves a 22-μF capacitance in a 1005M size by enhancing external electrode formation technology and other elemental technologies.　　Mass production of the capacitor began at our Tamamura Plant (Sawa District, Gunma Prefecture) in August 2025. Samples are available for 20 yen per unit.　　Technology Background　　AI servers and other types of devices with advanced information processing capabilities are equipped with ICs that consume extremely large amounts of power. For decoupling purposes in such power supply circuits, small, high-capacity MLCCs are required to handle large currents.　　Additionally, to minimize circuit loss and noise, it is important to route the power supply circuit close to the ICs. Traditional power supply circuits are routed around ICs. But, technological developments are progressing, allowing them to be placed closer, such as on the back of the board or directly under the ICs. Thus, embeddable MLCCs need to be equipped with high-precision external electrodes to connect to the lines.　　To satisfy this need, TAIYO YUDEN has improved its external electrode formation technology and commercialized 1005M-size embeddable MLCC with a capacitance of 22 μF.　　TAIYO YUDEN is continuing to develop new MLCCs with higher capacitance and other distinguishing features.　　■ Application　　Decoupling applications on IC power lines used in AI servers and other types of information devices
Key word：
Release time：2025-10-20 16:40 reading：515 Continue reading>>
ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale <span style='color:red'>AI</span> Infrastructure
Trade news

ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.
Key word：
Release time：2025-10-15 11:50 reading：787 Continue reading>>
Renesas Powers 800 Volt Direct Current <span style='color:red'>AI</span> Data Center Architecture with Next-Generation Power Semiconductors
Trade news

Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced that it is supporting efficient power conversion and distribution for the 800 Volt Direct Current power architecture announced by NVIDIA, helping fuel the next wave of smarter, faster AI infrastructure.　　As GPU-driven AI workloads intensify and data center power consumption scales into multi-hundred megawatt territory, modern data centers must adopt power architectures that are both energy optimized and scalable. Wide bandgap semiconductors such as GaN FET switches are quickly emerging as a key solution thanks to their faster switching, lower energy losses, and superior thermal management. Moreover, GaN power devices will enable the development of 800V direct current buses within racks to significantly reduce distribution losses and the need for large bus bars, while still supporting reuse of 48V components via DC/DC step-down converters.　　Renesas’ GaN based power solutions are especially suited for the task, supporting efficient and dense DC/DC power conversion with operating voltages of 48V to as high as 400V, with the option to stack up to 800V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the new DC/DC converters. 　　“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, Senior Vice President and General Manager of Power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”　　Renesas Power Management Leadership　　A world leader in power management ICs, Renesas ships more than 1.5 billion units per year, with increased shipments serving the computing industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of power management devices, delivering unmatched quality and efficiency with exceptional battery life. As a trusted supplier, Renesas has decades of experience designing power management ICs, backed by a dual-source production model, the industry’s most advanced process technology, and a vast network of more than 250 ecosystem partners.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. 
Key word：
Release time：2025-10-13 13:29 reading：920 Continue reading>>
Renesas Expands MCU/MPU Portfolio to Meet New Processing Needs of Edge <span style='color:red'>AI</span>
Trade news

Renesas Expands MCU/MPU Portfolio to Meet New Processing Needs of Edge AI

　　Artificial intelligence at the IoT edge is redefining how connected devices capture, process, and analyze data to render actionable outcomes in a variety of consumer and industrial applications. Unlike AI cloud servers, where power, data latency, and security management are prime design considerations, AIoT moves intelligence closer to the data source to enable real-time, in-situ decision-making with enhanced privacy and lower energy use.　　Despite its promise, AI at the IoT edge carries significant engineering challenges. Traditional AI models are computationally intensive. They require large amounts of memory and power, which resource-constrained IoT devices, often battery-operated with limited processing capacity, cannot easily support. Instead, designers need highly optimized, lightweight neural network models that run efficiently on microcontrollers, microprocessors, and other low-power hardware without sacrificing performance or accuracy.　　Managing AIoT Processing with TinyML Models　　Because it is inherently decentralized, AIoT reduces dependency on cloud servers while instantly acting upon real-time analytics and boosting security by keeping data local. This makes the process of outfitting factory equipment with predictive maintenance easier by embedding machine learning (ML) models within local sensors to detect anomalies or faults without waiting for cloud analysis. Smart home devices with AI-enhanced voice interfaces can perform instant keyword recognition and natural language understanding without sending sensitive audio data over the network.　　Similar to a trend underway in AI data centers, AIoT at the edge is also evolving to handle the proliferation of inference modeling. If data is the fuel for intelligent, real-time decision making, then AI inference is the engine that processes pre-trained ML models directly on edge devices.　　Data center AI inference modeling has a unique set of computational requirements best served by powerful parallel processors that can train large language models (LLMs) models that may have billions of parameters. On the other end of the spectrum, edge AIoT technologies like TinyML minimize memory requirements and computing overhead, making real-time analytics feasible for battery-powered IoT endpoints. Moreover, TinyML inference modeling enables multi-modal applications, combining voice, vision, and sensor data for advanced use cases like environmental monitoring and autonomous navigation.　　Real-time data processing is another function complicated by the memory limitations, modest energy budgets, and thermal constraints of edge AIoT. Many consumer and industrial applications, such as smart home voice recognition and autonomous sensors, demand ultra-low latency responses. Cloud-based AI struggles to meet these requirements due to network delays, making on-device inference essential. Engineers must also ensure data security and privacy by embedding strong encryption and root-of-trust mechanisms directly at the endpoint.　　Tools like TinyML are critical for overcoming these barriers and enabling compact machine learning models that operate efficiently on IoT hardware while extending battery life.　　Renesas Optimizes New MCUs and MPUs for Edge AIoT　　To better serve edge AIoT applications, Renesas recently expanded its processor portfolio, introducing new high-performance, low-power MCUs and MPUs with integrated neural processing units (NPUs) purpose-built for AI computing.　　The 32-bit Renesas RA8P1 MCU is designed for voice and vision edge AI applications and features dual Arm® cores, the 1GHz Cortex®-M85 and 250MHz Cortex-M33, and an Arm Ethos™-U55 NPU that delivers up to 256GOPS of AI performance. For security, the new MCU supports the Arm TrustZone® secure execution environment, hardware root-of-trust, secure boot, and advanced cryptographic engines, ensuring safe deployment in critical edge applications.　　Renesas also introduced the 64-bit RZ/G3E MPU for high-performance edge AIoT and human machine interfaces, combining a quad-core Arm Cortex-A55 CPU, Cortex-M33, and advanced graphics. The RZ/G3E embeds an Arm Ethos-U55 NPU to offload the main CPU by delivering up to 512GOPS of AI performance for image classification, voice recognition, and anomaly detection.　　Arm NPUs Right-Size Power and Performance for AIoT Applications　　The Arm Ethos-U55 NPU supports popular neural network models like ResNet, DS-CNN, and MobileNet with up to 35x faster inference compared to CPU-only processing. Unlike GPUs that burn tens to hundreds of watts on high-throughput, parallel computing, the Ethos-U55 delivers hardware-accelerated inference at milliwatt-level power, making it ideal for IoT edge devices.　　The Arm NPU supports compressed and quantized neural networks, reducing memory and compute overhead to allow for real-time, localized AI processing. In contrast, GPUs excel at training large models but are impractical for edge deployments due to size, cost, and energy use.　　Integrated RUHMI Framework and e² studio Streamline AI Edge Development　　The new MCU and MPU are both supported by the Renesas e² studio integrated development environment and incorporate Renesas' RUHMI Framework to accelerate edge AIoT design. RUHMI (Robust Unified Heterogeneous Model Integration) is an end-to-end toolset and Renesas' first comprehensive MCU/MPU framework for simplifying AI workloads on resource-constrained devices. RUHMI supports leading ML formats like TensorFlow™ Lite, PyTorch®, and ONNX, enabling developers to import and optimize pre-trained models for high-performance, low-power edge AI deployments.　　The RUHMI framework is enhanced by Renesas' e² studio, which provides intuitive tools, sample applications, and debugging features. When used together, they help developers more easily handle pre-processing of image and audio data, execute inference on the NPU, and post-process results within a unified environment.　　Edge AIoT Relies on Processors with Low Power and High Compute Density　　Grand View Research reports that the global edge AI market recorded sales of more than $20 billion in 2024, on its way to nearly $66.5 billion by 2030, driven by demand for real-time data processing and analysis at the network edge.　　Increasingly, MCUs and MPUs are the preferred choice for edge AIoT vision and voice applications due to low power consumption, localized processing, and cost efficiency. Unlike GPUs, which require cloud connectivity and high power, MCUs and MPUs can process data directly at the endpoint, enabling real-time inference and decision-making without network delays. By keeping sensitive data on-device, these processors also enhance security and privacy, eliminating the need for constant cloud communication.　　This combination of speed, energy efficiency, and data security makes MCUs and MPUs ideal for wearables, smart homes, and industrial edge AI systems.　　Future Efforts Will Prioritize HD Vision, Security, and a Robust IoT Supply Chain　　As we right-size support for our processor ecosystem using highly efficient TinyML models, Renesas is also developing MPUs for Vision Transformer (ViT) networks. This form of deep learning applies Transformer models originally designed for natural language processing to computer vision, but unlike power-hungry GPUs, ViTs process high-resolution images and videos without the need for cooling fans.　　Renesas is also creating zero-touch security solutions such as post-quantum cryptography (PQC), which secures against attacks from both classic and quantum computers to better defend against a widening range of cyber threats.　　As we foster AI-accelerated hardware, software, and tool chain development, Renesas remains committed to supporting legacy (non-AI) products and the open-source software environment that powers much of today's IoT systems. By collaborating with our partner ecosystem to keep abreast of the rapidly changing IoT landscape, we can better help our customers design sustainable, smart, secure, and connected systems safely and reliably.
Key word：
Release time：2025-08-25 14:59 reading：1248 Continue reading>>
High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN
Trade news

High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.
Key word：
Release time：2025-08-07 14:08 reading：1137 Continue reading>>
Renesas Introduces 64-bit RZ/G3E MPU for High-Performance HMI Systems Requiring <span style='color:red'>AI</span> Acceleration and Edge Computing
Trade news

Renesas Introduces 64-bit RZ/G3E MPU for High-Performance HMI Systems Requiring AI Acceleration and Edge Computing

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced the launch of its new 64-bit RZ/G3E microprocessor (MPU), a general-purpose device optimized for high-performance Human Machine Interface (HMI) applications. Combining a quad-core Arm® Cortex®-A55 running at up to 1.8GHz with a Neural Processing Unit (NPU), the RZ/G3E brings high-performance edge computing with AI inference for faster, more efficient local processing. With Full HD graphics support and high-speed connectivity, the MPU targets HMI systems for industrial and consumer segments including factory equipment, medical monitors, retail terminals and building automation.　　High-Performance Edge Computing and HMI Capabilities　　At the heart of the RZ/G3E is a quad-core Arm Cortex-A55, a Cortex-M33 core, and the Ethos™-U55 NPU for AI tasks. This architecture efficiently runs AI applications such as image classification, object recognition, voice recognition and anomaly detection while minimizing CPU load. Designed for HMI applications, it delivers smooth Full HD (1920x1080) video at 60fps on two independent displays, with output interfaces including LVDS (dual-link), MIPI-DSI, and parallel RGB. A MIPI-CSI camera interface is also available for video input and sensing applications.　　“The RZ/G3E builds on the proven performance of the RZ/G series with the addition of an NPU to support AI processing,” said Daryl Khoo, Vice President of Embedded Processing at Renesas. “By using the same Ethos-U55 NPU as our recently announced RA8P1 microcontroller, we’re expanding our AI embedded processor portfolio and offering a scalable path forward for AI development. These advancements address the demands of next-generation HMI applications across vision, voice and real-time analytics with powerful AI capabilities.”　　The RZ/G3E is equipped with a range of high-speed communication interfaces essential for edge devices. These include PCI Express 3.0 (2 lanes) for up to 8Gbps, USB 3.2 Gen2 for fast 10Gbps data transfer, and dual-channel Gigabit Ethernet for seamless connectivity with cloud services, storage, and 5G modules.　　Low-Power Standby with Fast Linux Resume　　Starting with the third-generation RZ/G3S, the RZ/G series includes advanced power management features to significantly reduce standby power. The RZ/G3E maintains sub-CPU operation and peripheral functions while achieving low power consumption around 50mW and around 1mW in deep standby mode. It supports DDR self-refresh mode to retain memory data, enabling quick wake-up from deep standby for running Linux applications.　　Comprehensive Linux Software Support　　Renesas continues to offer the Verified Linux Package (VLP) based on the reliable Civil Infrastructure Platform, with over 10 years of maintenance support. For users requiring the latest versions, Renesas provides Linux BSP Plus, including support for the latest LTS Linux kernel and Yocto. Ubuntu by Canonical and Debian open-source OS are also available for server or desktop Linux environments.　　Key Features of RZ/G3E　　CPU: Quad-core Cortex-A55 (up to 1.8GHz), Cortex-M33　　NPU: Ethos-U55 (512 GOPS)　　HMI: Dual Full HD output, MIPI-DSI / Dual-link LVDS / Parallel RGB, 3D graphics, H.264/H.265 codec　　Memory Interface: 32-bit LPDDR4/LPDDR4X with ECC　　Connectivity for 5G Communication: PCIe 3.0 (2 lanes), USB 3.2 Gen2, USB 2.0 x2, Gigabit Ethernet x2, CAN-FD　　Operating Temperature: -40°C to 125°C　　Package Options: 15mm square 529-pin FCBGA, 21mm square 625-pin FCBGA　　Product Longevity: 15-year supply under Product Longevity Program (PLP)　　System-on-Module Solutions from Renesas and Ecosystem Partners　　Renesas has also introduced system-on-module (SoM) solutions featuring the RZ/G3E. A broad range of SoM solutions will be available from Renesas’ ecosystem partners such as a SMARC module from Tria, an OSM (Size-M) from ARIES Embedded, and an OSM (Size-L) from MXT.　　Winning Combinations　　Renesas combined the RZ/G3E with other compatible devices to develop Full HD Dual-Display HMI Platform and Digital Otoscope solutions. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RZ/G3E is available today, along with the Evaluation Board Kit. The kit includes a SMARC v2.1.1 module board and a carrier board.If you want to buy related products, you can contact AMEYA360's customer service.
Key word：
Release time：2025-07-30 15:09 reading：1156 Continue reading>>

Turn to

/ 34

Popular categories
Semiconductors Circuit Protection Electromechanical Embedded Solutions Connectors, Interconnects Sensors, Transducers Optoelectronics Development Kits Test and Measurement Power Fans, Thermal Management Boxes, Enclosures, Racks Cables, Wires Passive Components Others
  • Week of hot material
  • Material in short supply seckilling
model brand Quote
MC33074DR2G onsemi
CDZVT2R20B ROHM Semiconductor
BD71847AMWV-E2 ROHM Semiconductor
TL431ACLPR Texas Instruments
RB751G-40T2R ROHM Semiconductor
model brand To snap up
IPZ40N04S5L4R8ATMA1 Infineon Technologies
BU33JA2MNVX-CTL ROHM Semiconductor
ESR03EZPJ151 ROHM Semiconductor
STM32F429IGT6 STMicroelectronics
BP3621 ROHM Semiconductor
TPS63050YFFR Texas Instruments
Hot labels
ROHM
IC
Averlogic
Intel
Samsung
IoT
AI
Sensor
Chip
Original authorized brand
More Licensed Brands>>
Information leaderboard
  • Week of ranking
  • Month ranking

About us

Qr code of ameya360 official account

Identify TWO-DIMENSIONAL code, you can pay attention to

AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

Please enter the verification code in the image below：

verification code