How Will BIWIN BGA SSD Break Through in the Intelligent Upgrade Path of Edge Devices?
Trade news

How Will BIWIN BGA SSD Break Through in the Intelligent Upgrade Path of Edge Devices?

　　In the wave of edge intelligence upgrades, as products are continuously evolving toward miniaturization and high integration, the device systems are confronted with dual challenges of physical space compression and surging computing power. Over the past years, BIWIN has invested significant effort in advancing research and development in storage technologies and advanced packaging and testing processes, providing it with competitive advantages in delivering tailored, miniaturized, and highly integrated storage solutions, including a diverse product portfolio, patented proprietary technologies, and a robust manufacturing and supply chain system.　　Notably, the BIWIN-launched EP410 BGA SSD, with its innovative architectural design, exemplifies a breakthrough solution for edge devices upgrades by offering three key capabilities: a compact and lightweight design, outstanding performance, and high reliability. While offering form factors as compact as those of embedded chips to meet the rigorous dimension requirements of portable devices, these SSDs are able to deliver superior performance and flexible capacity options compared to UFS/eMMC standards.　　Ultra-Thin, Compact Design to Maximize System Spatial Efficiency　　The increasing inference frequencies across smartphones and PCs have made the large capacity a fundamental configuration. Meanwhile, in order to deliver optimized user experience and robust operation under complicated environments, the terminal manufacturers are striving to achieve maximized hardware efficiency and capacity utilization within constrained system dimensions.　　Aligned with the trends in product iteration, BGA SSD EP410 is equipped with advanced packaging processes such as 16-layer die stacking and 40μm ultra-thin die, realizing the compact form factor measuring only 16×20×1.4mm—merely 1/14 the volume of conventional M.2 2280 SSDs (80×22×3.5mm). Surprisingly, it’s able to deliver uncompromising capacity up to 2TB, supporting the smooth image recognition and natural language processing in edge devices and free of capacity limitations. The adopted packaging processes not only reduces board footprint, providing more design flexibility for terminal manufacturers, but also enhances electrical performance to accommodate greater data throughput, enabling device manufacturers to develop more streamlined, competitively advantageous products.　　Uncompromised Performance, Establishing a Robust Foundation for Edge Intelligence Inference　　In terms of performance, BIWIN has harnessed its integrated R&D and packaging and testing business model, along with the optimization and tuning of firmware algorithm, to satisfy the critical demands for error correction, data security and integrity in storage products across various application scenarios.　　The BIWIN EP410 BGA SSD is compatible with PCIe 4.0 interface and NVMe protocol, with its sequential read/write speed reaching 7350MB/s and 6600MB/s respectively, far surpassing the theoretical bandwidth capability of UFS 4.0. Incorporated with self-developed flash memory management algorithm and dynamic bandwidth allocation technology, BIWIN BGA SSD has demonstrated excellent bandwidth stability, qualifying for edge intelligence devices’ access to high-speed data and transfers of high-load requirements with low latency, as well as the responsive handling of sophisticated intelligent tasks. From the application perspective, BIWIN BGA SSD has been included in the list of Google approved suppliers; on the compatibility front, it offers a cross-platform advantage, compatible with a variety of mainstream SoC solutions, which simplifies the design and introduction processes for clients.　　Intelligent Thermal Control and Reliability Design, Ensuring the Stable Operation of Critical Applications　　With the characteristics of chip miniaturization and high integration becoming more pronounced, the increases in power consumption and thermal output have presented challenges for devices’ operational stability and lifespan. Considering this, BIWIN EP410 BGA SSD has further strengthened its reliability design, verification, analysis and management processes. In order to ensure efficient heat dissipation, the product is engineered with DRAM-less architecture with intelligent thermal throttling, as well as in-house LDPC, dynamic and static wear leveling, bad block management and multi-environmental adaptability, contributing to significantly improving the data integrity and security, ensuring long-term stable operations and preventing disconnection during critical usage scenarios including gaming, productivity applications, and content creation.　　Having been subjected to BIWIN’s thorough testing procedures, including electrical performance, SI, application, compatibility, and reliability testings, the products have been validated with their MTBF exceeding 1,500,000 hours and operating temperature ranging from 0℃ to 70℃, enabling the flagship intelligent terminals, for example the 2-in-1 laptops, UAVs, automotive IVI, to catch the wave of edge intelligence upgrades.　　Conclusion　　From the successful mass production of its first PCIe BGA SSD in 2018 to the latest generation EP410 BGA SSD featuring the PCIe Gen4 x4 interface, BIWIN’s continuously evolving products demonstrate its deep expertise in miniaturization and high-integration technologies, while also highlighting its visionary foresight in the ecosystem of edge intelligence. As AI and storage technologies progress toward deeper ecological integration, BIWIN will further leverage its early-mover advantages in mobile terminal storage chips and extend this advantage into the edge intelligence era. Whether in hardware design, software optimization, or ecosystem construction, BIWIN remains committed to advancing industry progress and delivering increasingly intelligent, efficient, and reliable storage solutions to users.
Key word：
Release time：2025-03-20 14:01 reading：235 Continue reading>>
ROHM’s PMICs for SoCs have been Adopted in Reference Designs for Telechips’ Next-Generation Cockpits
Trade news

ROHM’s PMICs for SoCs have been Adopted in Reference Designs for Telechips’ Next-Generation Cockpits

　　ROHM has announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs ‘Dolphin3’ (REF67003) and ‘Dolphin5’ (REF67005) by Telechips, a major fabless semiconductor manufacturer for automotive applications headquartered in Pangyo, South Korea. Intended for use inside the cockpits of European automakers, these designs are scheduled for mass production in 2025.　　ROHM and Telechips have been engaged in technical exchanges since 2021, fostering a close collaborative relationship from the early stages of SoC chip design. As a first step in achieving this goal, ROHM’s power supply solutions have been integrated into Telechips’ power supply reference designs. These solutions support diverse model development by combining sub-PMICs and DrMOS with the main PMIC for SoCs.　　For infotainment applications, the Dolphin3 application processor (AP) power reference design includes the BD96801Qxx-C main PMIC for SoCs. Similarly, the Dolphin5 AP power reference design developed for next-generation digital cockpits combines the BD96805Qxx-C and BD96811Fxx-C main PMICs for SoC with the BD96806Qxx-C sub-PMIC for SoC, improving overall system efficiency and reliability.　　Modern cockpits are equipped with multiple displays, such as instrument clusters and infotainment systems, with each automotive application becoming increasingly multifunctional. As the processing power required for automotive SoCs increases, power ICs like PMICs must be able to support high currents while maintaining high efficiency. At the same time, manufacturers require flexible solutions that can accommodate different vehicle types and model variations with minimal circuit modifications. ROHM SoC PMICs address these challenges with high efficiency operation and internal memory (One Time Programmable ROM) that allows for custom output voltage settings and sequence control, enabling compatibility with large currents when paired with a sub-PMIC or DrMOS.　　Moonsoo Kim,　　Senior Vice President and Head of System Semiconductor R&D Center, Telechips Inc.“Telechips offers reference designs and core technologies centered around automotive SoCs for next-generation ADAS and cockpit applications. We are pleased to have developed a power reference design that supports the advanced features and larger displays found in next-generation cockpits by utilizing power solutions from ROHM, a global semiconductor manufacturer. Leveraging ROHM’s power supply solutions allows these reference designs to achieve advanced functionality while maintaining low power consumption. ROHM power solutions are highly scalable, so we look forward to future model expansions and continued collaboration.”　　Sumihiro Takashima,　　Corporate Officer and Director of the LSI Business Unit, ROHM Co., Ltd.“We are pleased that our power reference designs have been adopted by Telechips, a company with a strong track record in automotive SoCs. As ADAS continues to evolve and cockpits become more multifunctional, power supply ICs must handle larger currents while minimizing current consumption. ROHM SoC PMICs meet the high current demands of next-generation cockpits by adding a DrMOS or sub-PMIC in the stage after the main PMIC. This setup achieves high efficiency operation that contributes to lower power consumption. Going forward, ROHM will continue our partnership with Telechips to deepen our understanding of next-generation cockpits and ADAS, driving further evolution in the automotive sector through rapid product development.”　　・ Telechips SoC [Dolphin Series]　　The Dolphin series consists of automotive SoCs tailored to In-Vehicle Infotainment (IVI), Advanced Driver Assistance Systems (ADAS), and Autonomous Driving (AD) applications. Dolphin3 supports up to four displays and eight in-vehicle cameras, while Dolphin5 enables up to five displays and eight cameras, making highly suited as SoCs for increasingly multifunctional next-generation cockpits. Telechips is focused on expanding the Dolphin series of APs (Application Processors) for car infotainment, with models like Dolphin+, Dolphin3, and Dolphin5, by leveraging its globally recognized technical expertise cultivated over many years.　　・ ROHM 's Reference Design Page　　Details of ROHM’s reference designs and information on equipped products are available on ROHM’s website, along with reference boards. Please contact a sales representative or visit ROHM’s website for more information.　　https://www.rohm.com/contactus　　■ Power Supply Reference Design [REF67003] (equipped with Dolphin3)　　Reference Board No. REF67003-EVK-001　　https://www.rohm.com/reference-designs/ref67003　　■ Power Supply Reference Design [REF67005] (equipped with Dolphin5)　　Reference Board No. REF67005-EVK-001　　https://www.rohm.com/reference-designs/ref67005　　About Telechips Inc.Telechips is a fabless company specialized in designing system semiconductors that serve as the “brains” of automotive electronic components. The South Korean firm offers reliable, high-performance automotive SoCs. In response to the industry’s transition toward SDVs (Software Defined Vehicles), Telechips is broadening its core portfolio beyond car infotainment application processors (APs) to include MCUs, ADAS, network solutions, and AI accelerators.　　As a global, comprehensive automotive semiconductor manufacturer, Telechips adheres to international standards such as ISO 26262, TISAX, and ASPICE, leveraging both hardware and software expertise for future mobility ecosystems, including not only automotive smart cockpits, but also E/E architectures. What’s more, Telechips provides optimal solutions for In-Vehicle Infotainment systems (IVI), digital clusters, and ADAS, all compliant with key automotive standards (AEC-Q100, ISO 26262). Telechips has established business relationships with major automakers both domestically and internationally, supported by a strong track record of shipments.　　One flagship product is the Dolphin5 automotive SoC that integrates an Arm®-based CPU, GPU, and NPU to meet high-performance requirements. As a fabless company, Telechips outsources the manufacturing of its SoCs to Samsung Electronics’ foundry, delivering high-quality semiconductor products to domestic and overseas manufacturers. For more information, please visit Telechips’ website:　　https://www.telechips.com/　　*Arm® is a trademark or registered trademark of Arm Limited.　　TerminologyPMIC (Power Management IC)　　An IC that contains multiple power supply systems and functions for power management and sequence control on a single chip. It is becoming more commonplace in applications with multiple power supply systems in both the automotive and consumer sectors by significantly reducing space and development load vs conventional circuit configurations using individual components (i.e. DC-DC converter ICs, LDOs, discretes).　　SoC (System-on-a-Chip)　　A type of integrated circuit that incorporates a CPU (Central Processing Unit), memory, interface, and other elements on a single substrate. Widely used in automotive, consumer, and industrial applications due to its high processing capacity, power efficiency, and space savings.　　AP (Application Processor)　　Responsible for processing applications and software in devices such as smartphones, tablets, and automotive infotainment systems. It includes components such as a CPU, GPU, and memory controller to efficiently run the Operating System (OS), process multimedia, and render graphics.　　DrMOS (Doctor MOS)　　A module that integrates a MOSFET and gate driver IC. The simple configuration is expected to reduce design person-hours along with mounting area and to achieve efficient power conversion. At the same time, the built-in gate driver ensures high reliability by stabilizing MOSFET drive.
Key word：
Release time：2024-12-20 13:56 reading：723 Continue reading>>
NOVOSENSE launches automotive-grade temperature and humidity sensor NSHT30-Q1, driving the development of automotive intelligence
Trade news

NOVOSENSE launches automotive-grade temperature and humidity sensor NSHT30-Q1, driving the development of automotive intelligence

　　NOVOSENSE's new automotive temperature and humidity sensor NSHT30-Q1 is a relative humidity (RH) and temperature sensor based on CMOS-MEMS.　　NSHT30-Q1 integrates a complete sensor system on a single chip, including a capacitive RH sensor, CMOS temperature sensor and signal processor, and an I2C digital communication interface. It is designed in DFN package with Wettable Flank, and the product size is only 2.5mm×2.5mm×0.9mm. The I2C interface communication mode, small and reliable package, and wider operating temperature range make NSHT30-Q1 well suited for automotive applications.　　With the development of automotive intelligence, in-vehicle systems increasingly rely on judgment of the surrounding environment to make decisions. To achieve real-time control and autonomous operation, these systems need to capture necessary information with high-precision sensor products that can respond quickly.　　Take the automotive 5-in-1 sensor as an example. It uses the built-in temperature and humidity sensor to detect the temperature and humidity on the inside of the front windshield, and then calculates the dew point temperature. In this way, the air conditioning system can adjust the temperature inside the vehicle, the air outlet mode, the internal and external circulation, and other functions according to these signals, effectively reducing the humidity inside the vehicle and achieving the defogging function.　　At the same time, the lidar cannot work without support from the temperature and humidity sensor. The temperature and humidity sensor monitors the radar's operating temperature and humidity to ensure that it operates in a suitable operating environment to avoid performance degradation due to excessive temperature. The temperature and humidity sensor can also detect relative humidity to monitor whether the lenses of the lidar and camera module are broken, thereby avoiding damage to internal optical components caused by humid environments and ensuring vehicle driving safety.　　NOVOSENSE's NSHT30-Q1 is an automotive single-chip integrated temperature and humidity sensor with high reliability, high precision and low power consumption, suitable for various automotive applications, such as automotive HVAC control modules and battery management systems. By helping vehicles achieve more efficient and stable system performance, it provides strong support for the development of automotive intelligence.　　In addition, NSHT30-Q1's I2C interface features two selectable I2C addresses with communication speed up to 1 MHz and supports a wide supply voltage range of 2.0V~5.5V for various applications. Also, with programmable interrupt thresholds, alarms and system wake-up can be provided without the need for a microcontroller to continuously monitor the system.　　Performance parameters of NSHT30-Q1　　· Relative humidity (RH) sensor　　- Operating range: 0%~100　　- Precision: ±3% (typical)　　· Temperature sensor:　　- Operating temperature range: -40°C~125°C　　- Precision: ±0.3°C (typical)　　· Relative humidity and temperature compensated digital output　　· Wide supply voltage range: 2.0V~5.5V　　· I2C digital interface with communication speed up to 1 MHz　　- Two selectable addresses　　- Data protection with CRC　　· Low power consumption: average current of 2.5µA　　· 8-Pin Wettable Flank DFN package　　· AEC-Q100 compliant
Key word：
Release time：2024-04-08 16:41 reading：1578 Continue reading>>
Loongson Unveils 3A6000 CPU, Aims to Match Intel’s Advanced Process in Next Phase
Trade news

Loongson Unveils 3A6000 CPU, Aims to Match Intel’s Advanced Process in Next Phase

　　Loongson Technology Corp Ltd, unveiled its latest domestic CPU, Loongson 3A6000, on November 28th in Beijing, China. Notably, this CPU is entirely based on Chinese in-house design, free from reliance on any foreign licensed technology. During the product launch, Weiwu Hu, the chairman of Loongson, announced that next phase will utilize mature processes to achieve performance comparable to Intel’s advanced process, reported by CTEE.　　Loongson 3A6000 adopts a China domestic instruction set architecture(ISA), showcasing China’s capability to self-develop a new generation CPU, as reported by CCTV News. This CPU can run various cross-platform applications, catering to the needs of diverse large and complex desktop scenarios.　　The release of the Loongson 3A6000 signifies a pivotal milestone, highlighting China’s achievement in self sufficiency and product performance, bringing it on par with international mainstream products.　　According to Mydrivers.com, test results indicate that the overall performance of the Loongson 3A6000 processor is comparable to Intel’s 10th Gen Core quad-core processor launched in 2020. Notably, the Loongson 3A6000 is built on the self-developed ISA “LoongArch,” showcasing complete independence from foreign licensing, from top-level structure to ISA and application binary interface (ABI) standards.　　In terms of core performance, the Loongson 3A6000 boasts a main frequency of 2.5GHz, supports 128-bit vector extension (Loongson SIMD eXtension, LSX), and 256-bit advanced vector extension (Loongson Advanced SIMD eXtension, LASX). It also supports simultaneous multi-threading technology (SMT2), featuring a total of 8 logical cores on the entire chip.　　Hu highlighted that the 3A6000 has charted a path based on mature processes, optimizing performance through design. This achievement marks comparable performance with Intel and AMD under relatively weaker process conditions. The next step involves continuing to use mature processes to achieve performance levels on par with Intel’s advanced technology.　　Regarding the upcoming Loongson 3B6000, Hu mentioned during the third-quarter earnings briefing that Loongson is strategically focused on enhancing efficiency, aiming to reach or approach the performance level of Apple’s CPU for each GHz.
Key word：
Release time：2023-11-29 14:09 reading：1328 Continue reading>>
Intel’s Next Gen CPU to Produce at TSMC with 3nm in First Half of Next Year
Trade news

Intel’s Next Gen CPU to Produce at TSMC with 3nm in First Half of Next Year

　　Intel’s upcoming Lunar Lake platform has entrusted TSMC with the 3nm process of its CPU. This marks TSMC’s debut as the exclusive producer for Intel’s mainstream laptop CPU, including the previously negotiated Lunar Lake GPU and high-speed I/O (PCH) chip collaborations. This move positions TSMC to handle all major chip orders for Intel’s crucial platform next year, reported by UDN News.　　Regarding this news, TSMC refrained from commenting on single customer business or market speculations on November 21st. Intel has not issued any statements either.　　Recent leaks of Lunar Lake platform internal design details from Intel have generated discussions on various foreign tech websites and among tech experts on X (formerly known as Twitter). According to the leaked information, TSMC will be responsible for producing three key chips for Intel’s Lunar Lake—CPU, GPU, and NPU—all manufactured using the 3nm process. Orders for high-speed I/O chips are expected to leverage TSMC’s 5nm production, with mass production set to kick off in the first half of next year, aligning with the anticipated resurgence of the PC market in the latter half of the year.　　While TSMC previously manufactured CPUs for Intel’s Atom platform over a decade ago, it’s crucial to note that the Atom platform was categorized as a series of ultra-low-voltage processors, not Intel’s mainstream laptop platform. In recent years, Intel has gradually outsourced internal chips, beyond CPUs, for mainstream platforms to TSMC, including the GPU and high-speed I/O chips in the earlier Meteor Lake platform—all manufactured using TSMC’s 5nm node.　　Breaking from its tradition of in-house production of mainstream platform CPUs, Intel’s decision to outsource to TSMC hints at potential future collaborations. This move opens doors to new opportunities for TSMC to handle the production of Intel’s mainstream laptop platforms.　　It’s worth noting that the Intel Lunar Lake platform is scheduled for mass production at TSMC in the first half of next year, with a launch planned for the latter half of the year, targeting mainstream laptop platforms. Unlike the previous two generations of Intel laptop platforms, Lunar Lake integrates CPU, GPU, and NPU into a system-on-chip (SoC). This SoC is then combined with a high-speed I/O chip, utilizing Intel’s Foveros advanced packaging. Finally, the DRAM LPDDR5x is integrated with the two advanced packaged chips on the same IC substrate.
Key word：
Release time：2023-11-22 11:18 reading：1912 Continue reading>>
Intel’s CEO Envisions Over One Hundred Million AI PC Shipments in Two Years
Trade news

Intel’s CEO Envisions Over One Hundred Million AI PC Shipments in Two Years

　　On November 7th, Intel held its “Intel Innovation Taipei 2023 Technology Forum”, with CEO Pat Gelsinger highlighting the healthy state of PC inventory. He also expressed optimism about the injection of several more years of innovative applications and evolution in PCs through AI.　　Intel Aims to Ship over One Hundred Million AI PC within the Next Two Years　　Gelsinger expressed that the PC inventory has reached a healthy level, and he is optimistic about the future growth of AI PCs, which are equipped with AI processors or possess AI computing capabilities. He anticipates that AI will be a crucial turning point for the PC industry.　　Additionally, Gelsinger stated that the server industry may have seemed uneventful in recent years, but with the accelerated development of AI, it has become more exciting. AI is becoming ubiquitous, transitioning from the training phase to the deployment phase, and various platforms will revolve around AI.　　Gelsinger expressed his strong confidence in Intel’s position in the AI PC market, expecting to ship over one hundred million units within two years.　　Intel’s Ambitious Expansion in Semiconductor Foundry Landscape　　Intel is actively promoting its IDM 2.0 strategy, with expectations from the industry that the company, beyond its brand business, has advanced packaging capabilities to support semiconductor foundry operations. In the future, Intel is poised to compete with rivals such as TSMC and Samsung.　　Gelsinger noted that some have viewed Intel’s plan of achieving five technical nodes in four years as “an ambitious endeavor.” However, he emphasized that Intel remains committed to its original goal of advancing five process nodes within four years.　　The company’s foundry business has received positive responses from numerous potential customers, and while it may take three to four years for significant expansion, the advanced packaging aspect may only require two to three quarters to get on track.　　This transformation marks a significant shift for the company, setting new standards in the industry. Intel is making steady progress in its four-year plan to advance five nodes, and Moore’s Law will continue to extend. The construction of Intel’s new factories is also ongoing.　　According to Intel’s roadmap, Intel 7 and Intel 4 are already completed, Intel 3 is set for mass production in the latter half of this year, and Intel 20A and 18A are expected to enter mass production in the first and second halves of next year, respectively.
Key word：
Release time：2023-11-08 16:10 reading：1506 Continue reading>>
Intense Competition in Advancing Processes at the 2nm by Samsung, Intel, and TSMC
Trade news

Intense Competition in Advancing Processes at the 2nm by Samsung, Intel, and TSMC

　　According to TechNews’ report, Gitae Jeong, Vice President of Samsung Electronics, recently revealed in an interview that the company is set to introduce the SF1.4 (1.4nm) process, expected to enter mass production in 2027.　　This announcement intensifies the competition in advanced semiconductor manufacturing, particularly in the development of 2.5D/3D integrated heterogeneous structure packaging among the three major semiconductor foundry giants.　　*TSMC: N3P Process Superior to Intel 18A, N2 to Lead Industry’s Advanced Processes　　Previously, the semiconductor industry reported challenges with both TSMC and Samsung achieving yields above 60% for their 3nm processes due to undisclosed issues. TSMC’s yield was reported to be only 55%, below the normal yield rate.　　However, TSMC’s President, C.C. Wei, expressed optimism, stating that current N3 demand is better than three months ago, contributing to a healthy growth outlook for TSMC in 2024.　　Wei also anticipates that TSMC’s 3nm process will contribute a mid-single-digit percentage (4%-6%) to the company’s annual wafer revenue in 2023.　　Regarding competition with rival Intel’s 18A process, Wei believes that TSMC’s N3P process offers better performance, power, and area (PPA), alongside improved cost efficiency and technical maturity. Furthermore, TSMC’s upcoming N2 process is expected to be the industry’s most advanced when introduced.　　*Intel: Striving for the Fourth Customer for 18A Process Outsourcing Orders　　Intel’s CEO, Pat Gelsinger, has revealed that the 18A process has secured orders from three customers and aims to acquire a fourth customer by the end of the year. The advanced 18A process is scheduled to begin production at the end of 2024, with one customer already having made an advance payment. External expectations suggest that the customer could possibly be NVIDIA or Qualcomm.　　Intel has stated that Intel 4 and Intel 3 processes are similar, as are Intel 20A and Intel 18A processes. Consequently, Intel’s primary focus will be on offering Intel 3 and Intel 18A to semiconductor foundry customers. Meanwhile, Intel 4 and Intel 20A processes are more likely to be used internally. However, Intel is open to accommodating customer requests if they express interest in adopting these later processes.　　*Samsung: Commencing Mass Production of SF2 in 2025, Prioritizing Internal Use　　Due to challenges with the three-nanometer (3nm) manufacturing process, there have been reports that Samsung plans to shift directly to the more advanced two-nanometer (2nm) process.　　According to Samsung’s Foundry Forum (SFF) plan, they will begin mass production of the 2nm process (SF2) in 2025 for mobile applications, expand to high-performance computing (HPC) applications in 2026, and further extend to the automotive sector and the expected 1.4nm process by 2027.　　Similar to Intel, Samsung intends to prioritize the production of its own products using the 2nm process. The 2nm process products will initially be utilized for Samsung’s in-house products rather than external customer products.　　*Summary　　While TSMC’s N3 series currently enjoys broad support, including N3E, N3X, and N3P process series, the move to 2nm introduces new variables as it adopts a completely new GAAFET architecture. Regardless, whether it’s TSMC’s N2, Intel’s 18A, or Samsung’s SF2, each of them possesses its competitive strengths. The industry is also eagerly anticipating the future developments in advanced semiconductor processes.
Key word：
Release time：2023-11-03 14:50 reading：1542 Continue reading>>
Intel, Samsung, TSMC Race in Cutting-Edge Processes
Trade news

Intel, Samsung, TSMC Race in Cutting-Edge Processes

　　Driven by emerging technologies like AI and high-performance computing, the semiconductor foundry industry increasingly emphasizes the importance of advanced manufacturing processes. Recently, the industry has seen significant developments. Intel announced that it has commenced large-scale production of its Intel 4 process node, while TSMC and Samsung are equally committed to advancing their advanced process technologies.　　Intel’s Mass Production of Intel 4 Process Node　　On October 15th, Intel China’s official public account revealed that Intel has initiated large-scale production of the Intel 4 process node using Extreme Ultraviolet Lithography (EUV) technology. According to Intel, they are making significant progress with their “Four Years, Five Nodes” plan. This plan aims to produce next-generation products that meet the computational demands driven by AI’s role in the “Siliconomy.”　　Being the first process node produced by Intel using EUV lithography technology, Intel 4 offers substantial improvements in performance, efficiency, and transistor density compared to its predecessors. Intel 4 was unveiled at the Intel Innovation 2023 held in September this year.　　In comparison to Intel 7, Intel 4 achieves a 2x reduction in area, providing high-performance computing (HPC) logic libraries and incorporating various innovative features.　　In detail, Intel 4 simplifies the EUV lithography process, optimizing it for high-performance computing applications, supporting both low voltage (<0.65V) and high voltage (>1.1V) operations. Compared to Intel 7, Intel 4 boasts more than a 20% improvement in iso-power performance, and high-density Metal-Insulator-Metal (MIM) capacitors deliver outstanding power supply performance.　　Intel’s “Four Years, Five Nodes” plan is advancing with the following process updates:　　Intel 7 and Intel 4 are currently in large-scale production. Intel 3 is on track to meet its planned target by the end of 2023.　　Intel’s Intel 20A and Intel 18A, which use Ribbon FET all-around gate transistors and PowerVia backside power delivery technology, are also progressing well, with a target of 2024. Intel will soon introduce the Intel 18A process design kit (PDK) for Intel Foundry Services (IFS) customers.　　With the adoption of Intel 4 process nodes, the Intel Core i9 Ultra processor, codenamed “Meteor Lake,” will be released on December 14th this year, ushering in the AIPC era.　　On Intel 3 process nodes, the energy-efficient E-core Sierra Forest processor will be launched in the first half of 2024, and the high-performance P-core Granite Rapids processor will follow closely.　　Samsung’s 2nm Process Detailed Production Plan　　Samsung has already commenced production of its second-generation 3nm chips and plans to continue focusing on 2nm chips.　　On June 28th, Samsung Electronics unveiled its latest foundry technology innovations and business strategies at the 7th Samsung Foundry Forum (SFF) in 2023.　　In the era of artificial intelligence, Samsung’s foundry program, based on advanced GAA process technology, offers robust support for customers in AI applications. To this end, Samsung has disclosed a detailed production plan and performance levels for its 2nm process. The plan is to achieve mass production for mobile applications by 2025 and respectively expand to HPC and automotive electronics in 2026 and 2027.　　Samsung reports that the 2nm process (SF2) improves performance by 12% compared to the 3nm process (SF3), increases efficiency by 25%, and reduces the area by 5%.　　Furthermore, reports indicated that Samsung is ensuring the production capacity for products using the next-generation EUV lithography machine, High-NA, in September. This equipment is expected to have a prototype by the end of this year and officially enter production next year.　　TSMC’s Mass Production of 2nm by 2025　　This year, TSMC has unveiled its latest advanced semiconductor manufacturing roadmap in various locations, including Santa Clara, California, and Taiwan. The roadmap covers a range of processes from 3nm to 2nm.　　TSMC’s current roadmap for 3nm includes N3, N3E, N3P, N3X, and N3 AE, with N3 serving as the foundational version, N3E as an enhanced version with further cost optimization, N3P focusing on improved performance with a planned start in the second half of 2024, N3X targeting high-performance computing devices with a mass production goal in 2025, and N3 AE designed specifically for the automotive sector, offering greater reliability and the potential to shorten time-to-market by 2-3 years.　　In the 2nm realm, TSMC is planning to achieve mass production of the N2 process by 2025. TSMC has reported that the N2 process will offer a 15% speed improvement over N3E at the same power or a 30% reduction in power consumption, with a 15% increase in transistor density. In September, media reports revealed that TSMC has formed a task force to accelerate 2nm pilot production and mass production, aiming for risk production next year and official mass production in 2025.　　To ensure the smooth development of 2nm process technology, TSMC has initiated efforts in the upstream equipment sector. On September 12th, TSMC announced the acquisition of a 10% stake in IMS Nanofabrication, a subsidiary of Intel, for a price not exceeding $432.8 million. IMS specializes in the research and production of electron beam lithography machines, which find extensive applications in semiconductor manufacturing, optical component manufacturing, MEMS manufacturing, and more. The industry sees TSMC’s IMS acquisition as vital for developing crucial equipment and meeting the demand for 2nm process commercialization.
Key word：
Release time：2023-10-18 13:12 reading：1479 Continue reading>>
TSMC’s 3nm Wins Big Qualcomm 5G Deal, Outshines Samsung, Intel
Trade news

TSMC’s 3nm Wins Big Qualcomm 5G Deal, Outshines Samsung, Intel

　　According to a report from Economic Daily, TSMC’s 3-nanometer technology has attracted another heavyweight client. Following Apple and MediaTek, it is rumored that Qualcomm will also commission TSMC to produce its next-generation 5G flagship chip using the 3-nanometer process. The chip is expected to be unveiled in late October, making Qualcomm the third client for TSMC’s 3-nanometer technology.　　In response to these rumors, Qualcomm has not provided any comments, while TSMC has chosen to remain silent. Industry experts speculate that TSMC’s 3-nanometer technology will likely attract additional orders from major players such as NVIDIA and AMD in the future. With various leading-edge fabs continuously seeking TSMC’s services, it appears that TSMC’s 3-nanometer technology remains the top choice for international giants.　　Last year, Qualcomm unveiled its annual 5G flagship chip, the “Snapdragon 8 Gen 2,” manufactured using TSMC’s 4-nanometer process. The previous-generation Snapdragon “8 Gen 1” was produced using Samsung’s 4-nanometer process, but it encountered issues related to heat dissipation. Consequently, Qualcomm released an upgraded version, the “Snapdragon 8+ Gen 1,” using TSMC’s 4-nanometer process.　　Qualcomm has traditionally adopted a multi-supplier strategy for semiconductor manufacturing. It is rumored in the industry that Qualcomm has privately informed its smartphone brand customers about the upcoming next-generation 5G flagship chip, the “Snapdragon 8 Gen 3,” expected to be announced in late October. This chip will be available in two process versions: TSMC’s 4-nanometer (N4P) and 3-nanometer (N3E).
Key word：
Release time：2023-09-26 14:52 reading：1630 Continue reading>>
Fibocom 5G R16-compliant Module FM160-EAU Achieved Telstra Certification
Trade news

Fibocom 5G R16-compliant Module FM160-EAU Achieved Telstra Certification

　　Recently, Fibocom has achieved certification from Telstra, the leading mobile network service provider in Australia, with its SDX62-empowered module FM160-EAU tested on Telstra's 5G network, further verifying the capability of delivering superior and reliable connectivity service to local users.　　Shenzhen, China – August 3rd 2023 – Fibocom (Stock code: 300638), a global leading provider of IoT (Internet of Things) wireless solutions and wireless communication modules, announced that the 3GPP Release 16 compliant module FM160-EAU has achieved the Telstra certification. The module has been tested and verified on Telstra's network to provide ahigh-performance 5G broadband service, driving the 5G adoption across industries such as FWA, security monitoring, and Industrial IoT in the regional market.　　Broadband demand for regional and remote areas of Australian users has been growing rapidly, and FWA service is expected to cover more than 120,000 homes and business units by the end of 2024, according to Australia's national broadband network (NBN). Meanwhile, 5G is empowered with extended capabilities as 3GPP standard evolves, therefore, it is crucial for FWA service providers to keep up with these advancements and bring an elevated experience for end users. The 5G Sub-6GHz module FM160-EAU is designed to provide an optimal 5G user experience with enhanced coverage, boosted throughput, and increased bandwidth. It is the ideal wireless solution for FWA service providers to bridge the gap of the digital divide by enabling gigabit connectivity for end devices such as CPE, ODU, mobile hot spot, USB dongles, etc.　　Based on the Qualcomm Snapdragon® X62 modem chipset, FM160-EAU supports NR CA (Carrier Aggregation), and delivers ultra-fast speed of up to 3.5Gbps DL and 900Mbps UL, significantly optimizing the speed performance for those IoT applications that require high data throughput. In addition to hardware design, FM160-EAU packages in M.2 form factor and pin-compatible with Fibocom's Release15 module FM150, ensuring the smooth migration to advanced generations and minimizing the investment concerns. It is worth highlighting that FM160-EAU is capable of providing high-precision locating service with its built-in GNSS, and allows feasible customization on abundant functionalities such as digital audio, and industry-standard interfaces for the utilization of 5G applications.　　"Validating the interoperability tests on Telstra's mobile network and receiving the certification successfully signifies another breakthrough of Fibocom's 5G strategy in the global market," said Gene Santana, VP of Overseas Carriers Certification Department, Fibocom. "With the implementation of 5G infrastructure in the regional market, we hope to deliver the resilient, fast and secure FM160-enabled 5G FWA solution to the Australian market in collaboration with Telstra."
Key word：
Release time：2023-08-22 11:49 reading：2992 Continue reading>>

Turn to

/ 11

Popular categories
Semiconductors Circuit Protection Electromechanical Embedded Solutions Connectors, Interconnects Sensors, Transducers Optoelectronics Development Kits Test and Measurement Power Fans, Thermal Management Boxes, Enclosures, Racks Cables, Wires Passive Components Others
  • Week of hot material
  • Material in short supply seckilling
model brand Quote
CDZVT2R20B ROHM Semiconductor
TL431ACLPR Texas Instruments
RB751G-40T2R ROHM Semiconductor
MC33074DR2G onsemi
BD71847AMWV-E2 ROHM Semiconductor
model brand To snap up
ESR03EZPJ151 ROHM Semiconductor
IPZ40N04S5L4R8ATMA1 Infineon Technologies
BU33JA2MNVX-CTL ROHM Semiconductor
BP3621 ROHM Semiconductor
STM32F429IGT6 STMicroelectronics
TPS63050YFFR Texas Instruments
Hot labels
ROHM
IC
Averlogic
Intel
Samsung
IoT
AI
Sensor
Chip
Original authorized brand
More Licensed Brands>>
Information leaderboard
  • Week of ranking
  • Month ranking

About us

Qr code of ameya360 official account

Identify TWO-DIMENSIONAL code, you can pay attention to

AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

Please enter the verification code in the image below：

verification code