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How Will BIWIN BGA SSD Break Through in the <span style='color:red'>Intel</span>ligent Upgrade Path of Edge Devices?

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How Will BIWIN BGA SSD Break Through in the Intelligent Upgrade Path of Edge Devices?

　　In the wave of edge intelligence upgrades, as products are continuously evolving toward miniaturization and high integration, the device systems are confronted with dual challenges of physical space compression and surging computing power. Over the past years, BIWIN has invested significant effort in advancing research and development in storage technologies and advanced packaging and testing processes, providing it with competitive advantages in delivering tailored, miniaturized, and highly integrated storage solutions, including a diverse product portfolio, patented proprietary technologies, and a robust manufacturing and supply chain system.　　Notably, the BIWIN-launched EP410 BGA SSD, with its innovative architectural design, exemplifies a breakthrough solution for edge devices upgrades by offering three key capabilities: a compact and lightweight design, outstanding performance, and high reliability. While offering form factors as compact as those of embedded chips to meet the rigorous dimension requirements of portable devices, these SSDs are able to deliver superior performance and flexible capacity options compared to UFS/eMMC standards.　　Ultra-Thin, Compact Design to Maximize System Spatial Efficiency　　The increasing inference frequencies across smartphones and PCs have made the large capacity a fundamental configuration. Meanwhile, in order to deliver optimized user experience and robust operation under complicated environments, the terminal manufacturers are striving to achieve maximized hardware efficiency and capacity utilization within constrained system dimensions.　　Aligned with the trends in product iteration, BGA SSD EP410 is equipped with advanced packaging processes such as 16-layer die stacking and 40μm ultra-thin die, realizing the compact form factor measuring only 16×20×1.4mm—merely 1/14 the volume of conventional M.2 2280 SSDs (80×22×3.5mm). Surprisingly, it’s able to deliver uncompromising capacity up to 2TB, supporting the smooth image recognition and natural language processing in edge devices and free of capacity limitations. The adopted packaging processes not only reduces board footprint, providing more design flexibility for terminal manufacturers, but also enhances electrical performance to accommodate greater data throughput, enabling device manufacturers to develop more streamlined, competitively advantageous products.　　Uncompromised Performance, Establishing a Robust Foundation for Edge Intelligence Inference　　In terms of performance, BIWIN has harnessed its integrated R&D and packaging and testing business model, along with the optimization and tuning of firmware algorithm, to satisfy the critical demands for error correction, data security and integrity in storage products across various application scenarios.　　The BIWIN EP410 BGA SSD is compatible with PCIe 4.0 interface and NVMe protocol, with its sequential read/write speed reaching 7350MB/s and 6600MB/s respectively, far surpassing the theoretical bandwidth capability of UFS 4.0. Incorporated with self-developed flash memory management algorithm and dynamic bandwidth allocation technology, BIWIN BGA SSD has demonstrated excellent bandwidth stability, qualifying for edge intelligence devices’ access to high-speed data and transfers of high-load requirements with low latency, as well as the responsive handling of sophisticated intelligent tasks. From the application perspective, BIWIN BGA SSD has been included in the list of Google approved suppliers; on the compatibility front, it offers a cross-platform advantage, compatible with a variety of mainstream SoC solutions, which simplifies the design and introduction processes for clients.　　Intelligent Thermal Control and Reliability Design, Ensuring the Stable Operation of Critical Applications　　With the characteristics of chip miniaturization and high integration becoming more pronounced, the increases in power consumption and thermal output have presented challenges for devices’ operational stability and lifespan. Considering this, BIWIN EP410 BGA SSD has further strengthened its reliability design, verification, analysis and management processes. In order to ensure efficient heat dissipation, the product is engineered with DRAM-less architecture with intelligent thermal throttling, as well as in-house LDPC, dynamic and static wear leveling, bad block management and multi-environmental adaptability, contributing to significantly improving the data integrity and security, ensuring long-term stable operations and preventing disconnection during critical usage scenarios including gaming, productivity applications, and content creation.　　Having been subjected to BIWIN’s thorough testing procedures, including electrical performance, SI, application, compatibility, and reliability testings, the products have been validated with their MTBF exceeding 1,500,000 hours and operating temperature ranging from 0℃ to 70℃, enabling the flagship intelligent terminals, for example the 2-in-1 laptops, UAVs, automotive IVI, to catch the wave of edge intelligence upgrades.　　Conclusion　　From the successful mass production of its first PCIe BGA SSD in 2018 to the latest generation EP410 BGA SSD featuring the PCIe Gen4 x4 interface, BIWIN’s continuously evolving products demonstrate its deep expertise in miniaturization and high-integration technologies, while also highlighting its visionary foresight in the ecosystem of edge intelligence. As AI and storage technologies progress toward deeper ecological integration, BIWIN will further leverage its early-mover advantages in mobile terminal storage chips and extend this advantage into the edge intelligence era. Whether in hardware design, software optimization, or ecosystem construction, BIWIN remains committed to advancing industry progress and delivering increasingly intelligent, efficient, and reliable storage solutions to users.

Key word：

BIWIN

Release time：2025-03-20 14:01 reading：230 Continue reading>>

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NOVOSENSE launches automotive-grade temperature and humidity sensor NSHT30-Q1, driving the development of automotive intelligence

Key word：

NOVOSENSE

Release time：2024-04-08 16:41 reading：1571 Continue reading>>

Loongson Unveils 3A6000 CPU, Aims to Match <span style='color:red'>Intel</span>’s Advanced Process in Next Phase

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Loongson Unveils 3A6000 CPU, Aims to Match Intel’s Advanced Process in Next Phase

　　Loongson Technology Corp Ltd, unveiled its latest domestic CPU, Loongson 3A6000, on November 28th in Beijing, China. Notably, this CPU is entirely based on Chinese in-house design, free from reliance on any foreign licensed technology. During the product launch, Weiwu Hu, the chairman of Loongson, announced that next phase will utilize mature processes to achieve performance comparable to Intel’s advanced process, reported by CTEE.　　Loongson 3A6000 adopts a China domestic instruction set architecture(ISA), showcasing China’s capability to self-develop a new generation CPU, as reported by CCTV News. This CPU can run various cross-platform applications, catering to the needs of diverse large and complex desktop scenarios.　　The release of the Loongson 3A6000 signifies a pivotal milestone, highlighting China’s achievement in self sufficiency and product performance, bringing it on par with international mainstream products.　　According to Mydrivers.com, test results indicate that the overall performance of the Loongson 3A6000 processor is comparable to Intel’s 10th Gen Core quad-core processor launched in 2020. Notably, the Loongson 3A6000 is built on the self-developed ISA “LoongArch,” showcasing complete independence from foreign licensing, from top-level structure to ISA and application binary interface (ABI) standards.　　In terms of core performance, the Loongson 3A6000 boasts a main frequency of 2.5GHz, supports 128-bit vector extension (Loongson SIMD eXtension, LSX), and 256-bit advanced vector extension (Loongson Advanced SIMD eXtension, LASX). It also supports simultaneous multi-threading technology (SMT2), featuring a total of 8 logical cores on the entire chip.　　Hu highlighted that the 3A6000 has charted a path based on mature processes, optimizing performance through design. This achievement marks comparable performance with Intel and AMD under relatively weaker process conditions. The next step involves continuing to use mature processes to achieve performance levels on par with Intel’s advanced technology.　　Regarding the upcoming Loongson 3B6000, Hu mentioned during the third-quarter earnings briefing that Loongson is strategically focused on enhancing efficiency, aiming to reach or approach the performance level of Apple’s CPU for each GHz.

Key word：

CPU

Release time：2023-11-29 14:09 reading：1328 Continue reading>>

<span style='color:red'>Intel</span>’s Next Gen CPU to Produce at TSMC with 3nm in First Half of Next Year

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Intel’s Next Gen CPU to Produce at TSMC with 3nm in First Half of Next Year

　　Intel’s upcoming Lunar Lake platform has entrusted TSMC with the 3nm process of its CPU. This marks TSMC’s debut as the exclusive producer for Intel’s mainstream laptop CPU, including the previously negotiated Lunar Lake GPU and high-speed I/O (PCH) chip collaborations. This move positions TSMC to handle all major chip orders for Intel’s crucial platform next year, reported by UDN News.　　Regarding this news, TSMC refrained from commenting on single customer business or market speculations on November 21st. Intel has not issued any statements either.　　Recent leaks of Lunar Lake platform internal design details from Intel have generated discussions on various foreign tech websites and among tech experts on X (formerly known as Twitter). According to the leaked information, TSMC will be responsible for producing three key chips for Intel’s Lunar Lake—CPU, GPU, and NPU—all manufactured using the 3nm process. Orders for high-speed I/O chips are expected to leverage TSMC’s 5nm production, with mass production set to kick off in the first half of next year, aligning with the anticipated resurgence of the PC market in the latter half of the year.　　While TSMC previously manufactured CPUs for Intel’s Atom platform over a decade ago, it’s crucial to note that the Atom platform was categorized as a series of ultra-low-voltage processors, not Intel’s mainstream laptop platform. In recent years, Intel has gradually outsourced internal chips, beyond CPUs, for mainstream platforms to TSMC, including the GPU and high-speed I/O chips in the earlier Meteor Lake platform—all manufactured using TSMC’s 5nm node.　　Breaking from its tradition of in-house production of mainstream platform CPUs, Intel’s decision to outsource to TSMC hints at potential future collaborations. This move opens doors to new opportunities for TSMC to handle the production of Intel’s mainstream laptop platforms.　　It’s worth noting that the Intel Lunar Lake platform is scheduled for mass production at TSMC in the first half of next year, with a launch planned for the latter half of the year, targeting mainstream laptop platforms. Unlike the previous two generations of Intel laptop platforms, Lunar Lake integrates CPU, GPU, and NPU into a system-on-chip (SoC). This SoC is then combined with a high-speed I/O chip, utilizing Intel’s Foveros advanced packaging. Finally, the DRAM LPDDR5x is integrated with the two advanced packaged chips on the same IC substrate.

Key word：

Intel

Release time：2023-11-22 11:18 reading：1911 Continue reading>>

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Intel’s CEO Envisions Over One Hundred Million AI PC Shipments in Two Years

　　On November 7th, Intel held its “Intel Innovation Taipei 2023 Technology Forum”, with CEO Pat Gelsinger highlighting the healthy state of PC inventory. He also expressed optimism about the injection of several more years of innovative applications and evolution in PCs through AI.　　Intel Aims to Ship over One Hundred Million AI PC within the Next Two Years　　Gelsinger expressed that the PC inventory has reached a healthy level, and he is optimistic about the future growth of AI PCs, which are equipped with AI processors or possess AI computing capabilities. He anticipates that AI will be a crucial turning point for the PC industry.　　Additionally, Gelsinger stated that the server industry may have seemed uneventful in recent years, but with the accelerated development of AI, it has become more exciting. AI is becoming ubiquitous, transitioning from the training phase to the deployment phase, and various platforms will revolve around AI.　　Gelsinger expressed his strong confidence in Intel’s position in the AI PC market, expecting to ship over one hundred million units within two years.　　Intel’s Ambitious Expansion in Semiconductor Foundry Landscape　　Intel is actively promoting its IDM 2.0 strategy, with expectations from the industry that the company, beyond its brand business, has advanced packaging capabilities to support semiconductor foundry operations. In the future, Intel is poised to compete with rivals such as TSMC and Samsung.　　Gelsinger noted that some have viewed Intel’s plan of achieving five technical nodes in four years as “an ambitious endeavor.” However, he emphasized that Intel remains committed to its original goal of advancing five process nodes within four years.　　The company’s foundry business has received positive responses from numerous potential customers, and while it may take three to four years for significant expansion, the advanced packaging aspect may only require two to three quarters to get on track.　　This transformation marks a significant shift for the company, setting new standards in the industry. Intel is making steady progress in its four-year plan to advance five nodes, and Moore’s Law will continue to extend. The construction of Intel’s new factories is also ongoing.　　According to Intel’s roadmap, Intel 7 and Intel 4 are already completed, Intel 3 is set for mass production in the latter half of this year, and Intel 20A and 18A are expected to enter mass production in the first and second halves of next year, respectively.

Key word：

Intel

Release time：2023-11-08 16:10 reading：1505 Continue reading>>

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Intense Competition in Advancing Processes at the 2nm by Samsung, Intel, and TSMC

　　According to TechNews’ report, Gitae Jeong, Vice President of Samsung Electronics, recently revealed in an interview that the company is set to introduce the SF1.4 (1.4nm) process, expected to enter mass production in 2027.　　This announcement intensifies the competition in advanced semiconductor manufacturing, particularly in the development of 2.5D/3D integrated heterogeneous structure packaging among the three major semiconductor foundry giants.　　*TSMC: N3P Process Superior to Intel 18A, N2 to Lead Industry’s Advanced Processes　　Previously, the semiconductor industry reported challenges with both TSMC and Samsung achieving yields above 60% for their 3nm processes due to undisclosed issues. TSMC’s yield was reported to be only 55%, below the normal yield rate.　　However, TSMC’s President, C.C. Wei, expressed optimism, stating that current N3 demand is better than three months ago, contributing to a healthy growth outlook for TSMC in 2024.　　Wei also anticipates that TSMC’s 3nm process will contribute a mid-single-digit percentage (4%-6%) to the company’s annual wafer revenue in 2023.　　Regarding competition with rival Intel’s 18A process, Wei believes that TSMC’s N3P process offers better performance, power, and area (PPA), alongside improved cost efficiency and technical maturity. Furthermore, TSMC’s upcoming N2 process is expected to be the industry’s most advanced when introduced.　　*Intel: Striving for the Fourth Customer for 18A Process Outsourcing Orders　　Intel’s CEO, Pat Gelsinger, has revealed that the 18A process has secured orders from three customers and aims to acquire a fourth customer by the end of the year. The advanced 18A process is scheduled to begin production at the end of 2024, with one customer already having made an advance payment. External expectations suggest that the customer could possibly be NVIDIA or Qualcomm.　　Intel has stated that Intel 4 and Intel 3 processes are similar, as are Intel 20A and Intel 18A processes. Consequently, Intel’s primary focus will be on offering Intel 3 and Intel 18A to semiconductor foundry customers. Meanwhile, Intel 4 and Intel 20A processes are more likely to be used internally. However, Intel is open to accommodating customer requests if they express interest in adopting these later processes.　　*Samsung: Commencing Mass Production of SF2 in 2025, Prioritizing Internal Use　　Due to challenges with the three-nanometer (3nm) manufacturing process, there have been reports that Samsung plans to shift directly to the more advanced two-nanometer (2nm) process.　　According to Samsung’s Foundry Forum (SFF) plan, they will begin mass production of the 2nm process (SF2) in 2025 for mobile applications, expand to high-performance computing (HPC) applications in 2026, and further extend to the automotive sector and the expected 1.4nm process by 2027.　　Similar to Intel, Samsung intends to prioritize the production of its own products using the 2nm process. The 2nm process products will initially be utilized for Samsung’s in-house products rather than external customer products.　　*Summary　　While TSMC’s N3 series currently enjoys broad support, including N3E, N3X, and N3P process series, the move to 2nm introduces new variables as it adopts a completely new GAAFET architecture. Regardless, whether it’s TSMC’s N2, Intel’s 18A, or Samsung’s SF2, each of them possesses its competitive strengths. The industry is also eagerly anticipating the future developments in advanced semiconductor processes.

Key word：

TSMC

Release time：2023-11-03 14:50 reading：1541 Continue reading>>

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Intel, Samsung, TSMC Race in Cutting-Edge Processes

　　Driven by emerging technologies like AI and high-performance computing, the semiconductor foundry industry increasingly emphasizes the importance of advanced manufacturing processes. Recently, the industry has seen significant developments. Intel announced that it has commenced large-scale production of its Intel 4 process node, while TSMC and Samsung are equally committed to advancing their advanced process technologies.　　Intel’s Mass Production of Intel 4 Process Node　　On October 15th, Intel China’s official public account revealed that Intel has initiated large-scale production of the Intel 4 process node using Extreme Ultraviolet Lithography (EUV) technology. According to Intel, they are making significant progress with their “Four Years, Five Nodes” plan. This plan aims to produce next-generation products that meet the computational demands driven by AI’s role in the “Siliconomy.”　　Being the first process node produced by Intel using EUV lithography technology, Intel 4 offers substantial improvements in performance, efficiency, and transistor density compared to its predecessors. Intel 4 was unveiled at the Intel Innovation 2023 held in September this year.　　In comparison to Intel 7, Intel 4 achieves a 2x reduction in area, providing high-performance computing (HPC) logic libraries and incorporating various innovative features.　　In detail, Intel 4 simplifies the EUV lithography process, optimizing it for high-performance computing applications, supporting both low voltage (<0.65V) and high voltage (>1.1V) operations. Compared to Intel 7, Intel 4 boasts more than a 20% improvement in iso-power performance, and high-density Metal-Insulator-Metal (MIM) capacitors deliver outstanding power supply performance.　　Intel’s “Four Years, Five Nodes” plan is advancing with the following process updates:　　Intel 7 and Intel 4 are currently in large-scale production. Intel 3 is on track to meet its planned target by the end of 2023.　　Intel’s Intel 20A and Intel 18A, which use Ribbon FET all-around gate transistors and PowerVia backside power delivery technology, are also progressing well, with a target of 2024. Intel will soon introduce the Intel 18A process design kit (PDK) for Intel Foundry Services (IFS) customers.　　With the adoption of Intel 4 process nodes, the Intel Core i9 Ultra processor, codenamed “Meteor Lake,” will be released on December 14th this year, ushering in the AIPC era.　　On Intel 3 process nodes, the energy-efficient E-core Sierra Forest processor will be launched in the first half of 2024, and the high-performance P-core Granite Rapids processor will follow closely.　　Samsung’s 2nm Process Detailed Production Plan　　Samsung has already commenced production of its second-generation 3nm chips and plans to continue focusing on 2nm chips.　　On June 28th, Samsung Electronics unveiled its latest foundry technology innovations and business strategies at the 7th Samsung Foundry Forum (SFF) in 2023.　　In the era of artificial intelligence, Samsung’s foundry program, based on advanced GAA process technology, offers robust support for customers in AI applications. To this end, Samsung has disclosed a detailed production plan and performance levels for its 2nm process. The plan is to achieve mass production for mobile applications by 2025 and respectively expand to HPC and automotive electronics in 2026 and 2027.　　Samsung reports that the 2nm process (SF2) improves performance by 12% compared to the 3nm process (SF3), increases efficiency by 25%, and reduces the area by 5%.　　Furthermore, reports indicated that Samsung is ensuring the production capacity for products using the next-generation EUV lithography machine, High-NA, in September. This equipment is expected to have a prototype by the end of this year and officially enter production next year.　　TSMC’s Mass Production of 2nm by 2025　　This year, TSMC has unveiled its latest advanced semiconductor manufacturing roadmap in various locations, including Santa Clara, California, and Taiwan. The roadmap covers a range of processes from 3nm to 2nm.　　TSMC’s current roadmap for 3nm includes N3, N3E, N3P, N3X, and N3 AE, with N3 serving as the foundational version, N3E as an enhanced version with further cost optimization, N3P focusing on improved performance with a planned start in the second half of 2024, N3X targeting high-performance computing devices with a mass production goal in 2025, and N3 AE designed specifically for the automotive sector, offering greater reliability and the potential to shorten time-to-market by 2-3 years.　　In the 2nm realm, TSMC is planning to achieve mass production of the N2 process by 2025. TSMC has reported that the N2 process will offer a 15% speed improvement over N3E at the same power or a 30% reduction in power consumption, with a 15% increase in transistor density. In September, media reports revealed that TSMC has formed a task force to accelerate 2nm pilot production and mass production, aiming for risk production next year and official mass production in 2025.　　To ensure the smooth development of 2nm process technology, TSMC has initiated efforts in the upstream equipment sector. On September 12th, TSMC announced the acquisition of a 10% stake in IMS Nanofabrication, a subsidiary of Intel, for a price not exceeding $432.8 million. IMS specializes in the research and production of electron beam lithography machines, which find extensive applications in semiconductor manufacturing, optical component manufacturing, MEMS manufacturing, and more. The industry sees TSMC’s IMS acquisition as vital for developing crucial equipment and meeting the demand for 2nm process commercialization.

Key word：

TSMC

Release time：2023-10-18 13:12 reading：1478 Continue reading>>

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TSMC’s 3nm Wins Big Qualcomm 5G Deal, Outshines Samsung, Intel

　　According to a report from Economic Daily, TSMC’s 3-nanometer technology has attracted another heavyweight client. Following Apple and MediaTek, it is rumored that Qualcomm will also commission TSMC to produce its next-generation 5G flagship chip using the 3-nanometer process. The chip is expected to be unveiled in late October, making Qualcomm the third client for TSMC’s 3-nanometer technology.　　In response to these rumors, Qualcomm has not provided any comments, while TSMC has chosen to remain silent. Industry experts speculate that TSMC’s 3-nanometer technology will likely attract additional orders from major players such as NVIDIA and AMD in the future. With various leading-edge fabs continuously seeking TSMC’s services, it appears that TSMC’s 3-nanometer technology remains the top choice for international giants.　　Last year, Qualcomm unveiled its annual 5G flagship chip, the “Snapdragon 8 Gen 2,” manufactured using TSMC’s 4-nanometer process. The previous-generation Snapdragon “8 Gen 1” was produced using Samsung’s 4-nanometer process, but it encountered issues related to heat dissipation. Consequently, Qualcomm released an upgraded version, the “Snapdragon 8+ Gen 1,” using TSMC’s 4-nanometer process.　　Qualcomm has traditionally adopted a multi-supplier strategy for semiconductor manufacturing. It is rumored in the industry that Qualcomm has privately informed its smartphone brand customers about the upcoming next-generation 5G flagship chip, the “Snapdragon 8 Gen 3,” expected to be announced in late October. This chip will be available in two process versions: TSMC’s 4-nanometer (N4P) and 3-nanometer (N3E).

Key word：

TSMC’s

Release time：2023-09-26 14:52 reading：1630 Continue reading>>

AMEYA360:Experts Weigh Impact of <span style='color:red'>Intel</span>-Arm Collaboration

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AMEYA360:Experts Weigh Impact of Intel-Arm Collaboration

　　Intel Foundry Services and Arm agreed last month to optimize Arm’s IP for Intel’s upcoming 18A process technology (1.8 nm). The collaboration will focus on mobile designs and will undertake design technology co-optimization (DTCO) and system technology co-optimization (STCO), which means that Arm’s IP will be optimized both for Intel’s forthcoming production node and for the company’s advanced packaging technologies.　　Intel Foundry Services and Arm will jointly fine-tune Arm’s IP using the DTCO methodology for Intel’s 18A manufacturing process to optimize performance, power and costs of upcoming designs. One of the key fruits of this collaboration will be development of “an Arm-based mobile SoC and silicon technology demonstration and reference platform for chip designs,” which is a rather broad definition of the work.　　Meanwhile, Intel and Arm confirm that the work has commenced.　　“The work will validate the performance, power and area utilization of Arm SoC designs on the Intel 18A process,” a spokesperson for Intel told EE Times.　　“We are building custom IP to ensure optimal power, performance and area for Arm-based SoC design,” a spokesperson for Arm explained to EE Times. “With this announcement, we enable one more option to our licensees to choose from when they target advanced nodes for Arm-based SoC design.”

Key word：

AMEYA360

Release time：2023-05-16 10:53 reading：3845 Continue reading>>

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Ameya360:Panasonic Introduces Intelli-Balance 100 Mirror Energy Recovery Ventilator at the International Builders’ Show 2023

　　LAS VEGAS, NV - Panasonic, a leading provider of ventilation and healthy indoor living solutions to the building industry, today announced the new Intelli-Balance 100 Mirror Energy Recovery Ventilator (ERV.) The new model is the company’s latest addition to its suite of ERVs, which help to balance air pressure in homes and buildings, and improve indoor air quality. Ideal for large, multi-family projects, the Mirror ERV is an optimal solution for tight spaces where duplicate floorplans require ventilation on either side of a building.　　As consumer awareness of indoor environmental quality has risen since the start of the pandemic, Panasonic continues to deliver solutions that help provide consumers with healthier homes built to meet energy efficiency standards across the country. The new Intelli-Balance 100 Mirror ERV is a cost-effective, code compliant, and installation-flexible option for builders to add into their projects. Key features include:　　1.Two DC motors with Smart Flow technology to assure optimal CFM (cubic feet per minute) output　　2.Multi-speed selector (50-100 CFM), which provides customizable airflow to create balance, positive or negative pressure within the home　　3.Built-in ASHRAE 62.2 timing function to assure code compliance　　4.MERV 8 filter included, with MERV 8 and optional MERV 13 filters available　　5.Two mounting options on the wall or ceiling　　In addition to debuting the Intelli-Balance 100 Mirror ERV at the International Builders’ Show, Panasonic will also be featuring additional solutions including:　　1.WhisperAir Repair Spot Air Purifier　　2.Swidget Smart Controls　　3.The extended suite of ERVS, including the Intelli-Balance 100, Intelli-Balance 200, and WhisperComfort ERV Balanced Air Solution　　4.Ventilation fans, including the WhisperFit DC Fan, WhisperGreen Select Fan, WhisperWarm Fan/Heater, and WhisperFresh Select Fan

Key word：

Panasonic

Release time：2023-02-15 14:24 reading：2071 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
MC33074DR2G	onsemi

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
BP3621	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BU33JA2MNVX-CTL	ROHM Semiconductor

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