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AMEYA360:Onsemi NTH4L028N170M1 Silicon Carbide (SiC) MOSFET

　　Anson Mae NTH4L028N170M1 Silicon Carbide (SiC) MOSFET optimized for fast switching applications. Anson MOSFET uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak. The series provides optimum performance when driven by a 20V grid drive, but can also be used in conjunction with an 18V grid drive.　　At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.　　The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation and gate noise.　　Characteristic　　Typical value RDS(on) = 28mΩ (VGS = 20V)　　Ultra-low grid charge (QG(tot)=200nC)　　High speed switch with low capacitance (Coss=200pF)　　100% avalanche tested　　These devices are lead free and comply with the RoHS directive　　Application　　UPS　　Dc/DC converter　　Boost converter

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AMEYA360,Onsemi,NTH4L028N170M1

Release time：2023-02-24 10:41 reading：3272 Continue reading>>

Ameya360:Hyundai Selects <span style='color:red'>onsemi</span> SiC Power Modules for Traction Inverters

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Ameya360:Hyundai Selects onsemi SiC Power Modules for Traction Inverters

　　onsemi’s EliteSiC family of silicon carbide (SiC) power modules has been selected for Kia Corp.’s EV6 GT model. The electric vehicle (EV) accelerates from zero to 60mph (96.6kph) in 3.4s and reaches top speed at 161mph (259kph). Within the traction inverter of a high performance EV, the EliteSiC power module enables high-efficiency power conversion from the DC 800V of the battery to the AC drive for the rear axle.　　onsemi continues to collaborate with Hyundai Motor Co. and Kia (HMC/KIA) to use the EliteSiC technology for the upcoming high performance EVs based on HMC/KIA’s Electric – Global Module Platform (E-GMP). onsemi’s high-power density SiC power module delivers the most innovative package technology to minimize parasitics and thermal resistance and offers robust package reliability using innovative interconnects. This leads to reduced power losses associated with DC to AC conversion along with reduced size and weight of the traction inverter, increasing performance and EV range by 5%.　　With decades of superior packaging expertise in high-density power solutions for automotive applications, onsemi differentiated power module technology delivers industry-leading power traction solutions. Exceptional packaging technology alongside an evolutionary path from planar to trench cell structures in SiC enable onsemi to provide highly robust and reliable solutions to industry leader HKMC/KIA.　　“Our collaboration with HMC/KIA is rooted in the superior performance of our EliteSiC technology,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi. “As important is our quickly growing, vertically integrated SiC supply chain that allows onsemi to plan for the necessary scale to support high-volume production for EVs.”

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Ameya360,onsemi

Release time：2023-01-13 14:09 reading：3401 Continue reading>>

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Ameya360:Onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs

　　According to Ameya 360：onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L015N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.　　FEATURES:　　Qualified for automotive according to AEC?Q101　　650V rated　　Max RDS(on) = 18mΩ at Vgs = 18V, Id = 75A　　High-speed switching and low capacitance　　100% UIL tested　　Devices are RoHS compliant　　APPLICATIONS：　　Automotive DC/DC and PFC　　Automotive traction inverter

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Ameya360,Onsemi

Release time：2023-01-12 11:18 reading：3031 Continue reading>>

<span style='color:red'>onsemi</span>’s EliteSiC Portfolio Touts High-efficiency Performance

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onsemi’s EliteSiC Portfolio Touts High-efficiency Performance

　　onsemi will showcase three new members of its EliteSiC silicon carbide (SiC) family at the Consumer Electronics Show (CES) 2023 in Las Vegas.　　onsemi will showcase three new members of its EliteSiC silicon carbide (SiC) family—the 1.7kV EliteSiC MOSFET and two 1.7kV avalanche-rated EliteSiC Schottky diodes—at the Consumer Electronics Show (CES) 2023 in Las Vegas. The new devices provide reliable, high-efficiency performance for energy infrastructure and industrial drive applications and highlight onsemi’s position as a leader in industrial silicon carbide solutions.　　With the 1.7kV EliteSiC MOSFET (NTH4L028N170M1), onsemi delivers higher breakdown voltage (BV) SiC solutions, required for high-power industrial applications. The two 1.7kV avalanche-rated EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) allow designers to achieve stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC.　　“By providing best-in-class efficiency with reduced power losses, the new 1.7kV EliteSiC devices reinforce the high standards of superior performance and quality for products in our EliteSiC family as well as further expand the depth and breadth of onsemi’s EliteSiC,” said Simon Keeton, executive vice president and general manager, Power Solutions Group, onsemi. “Together with our end-to-end SiC manufacturing capabilities, onsemi offers the technology and supply assurance to meet the needs of industrial energy infrastructure and industrial drive providers.”　　Renewable energy applications are consistently moving to higher voltages with solar systems from 1.1kV to 1.5kV DC Buses. To support this change, customers require MOSFETs with a higher BV. The new 1.7kV EliteSiC MOSFET offers a maximum Vgs range of -15V/25V, making it suitable for fast switching applications where gate voltages are increasing to -10V, delivering increased system reliability.　　At a test condition of 1.2kV at 40A, the 1.7kV EliteSiC MOSFET achieves a gate charge (Qg) of 200nC – which is market-leading compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.　　At a BV rating of 1.7kV, the EliteSiC Schottky diode devices offer improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode. The new devices also provide excellent reverse leakage performance with a maximum reverse current (IR) of just 40μA at 25°C and 100μA at 175°C – significantly better than competitive devices that are often rated at 100μA at 25°C.

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onsemi

Release time：2023-01-06 11:02 reading：3401 Continue reading>>

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onsemi Completes Sale of Japan Fab

　　onsemi has completed of the divestment of its Niigata, Japan facility to JS Foundry.　　onsemi has completed of the divestment of its Niigata, Japan facility to JS Foundry K.K. The sale aligns with onsemi’s fab-liter strategy to expand gross margin and improve its financial results by reducing fixed cost footprint.　　JS Foundry was founded through a partnership between Mercuria Investment Co. Ltd and Sangyo Sosei Advisory Corp. Inc. Mercuria, a subsidiary of Mercuria Holdings Co. Ltd, is one of the leaders in the Japanese alternative investment space, with its investments covering different industries including manufacturing and service industries. SSA is the first financial advisor in Japan specializing in the technology, media and telecommunications (TMT) industry. Through their partnership, they established JS Foundry to be a Japanese-owned foundry company to supply semiconductors to Japanese customers.　　“After an in-depth search for a buyer for the last two years, we are confident to have found the right partner for the facility in JS Foundry,” said Hassane El-Khoury, president and chief executive officer of onsemi. “As always, when making decisions about our manufacturing structure and facilities across the globe, we consider the well-being of employees and seek to create a smooth transition for everyone involved. We look forward to a bright future for JS Foundry K.K. and Niigata employees, who we thank for their hard work and commitment to onsemi.”　　JS Foundry is planning to use the site as the foundation for its new foundry business in Japan. To ensure continuity of supply to its existing customers, onsemi has entered into a wafer supply agreement with JS Foundry K.K. to continue existing wafer fabrication at the site.

Key word：

onsemi

Release time：2023-01-04 09:45 reading：3418 Continue reading>>

model	brand	Quote
CDZVT2R20B	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
TL431ACLPR	Texas Instruments

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
ESR03EZPJ151	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
STM32F429IGT6	STMicroelectronics
BP3621	ROHM Semiconductor

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