ROHM launches 650V GaN HEMT in a compact, high-<span style='color:red'>heat</span> dissipation TOLL package
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ROHM launches 650V GaN HEMT in a compact, high-heat dissipation TOLL package

　　ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with excellent heat dissipation, high current capacity, and superior switching performance, the TOLL package is increasingly being adopted in applications that require high power handling, particularly inside industrial equipment and automotive systems. For this launch, package manufacturing has been outsourced to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter ATX), an experienced OSAT (Outsourced Semiconductor Assembly and Test) provider.　　Improving the efficiency of motors and power supplies, which account for most of the world’s electricity consumption, has become a significant challenge to achieving a decarbonized society. As power devices are key to improve efficiency, the adoption of new materials such as SiC (Silicon Carbide) and GaN is expected to further enhance the efficiency of power supplies.　　ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup - meeting the market demand for even smaller and more efficient high-power applications.　　The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.　　To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system, to carry out design and planning. Under the collaboration announced on December 10, 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company Limited (TSMC). Back-end processes are handled by ATX. On top, ROHM plans to partner with ATX to produce automotive-grade GaN devices.　　In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by strengthening these partnerships in addition to advancing its own development efforts.　　Liao Hongchang, Director and General Manager, ATX SEMICONDUCTOR (WEIHAI) CO., LTD.　　“We are extremely pleased to have been entrusted with production by ROHM, a company renowned for its advanced manufacturing technologies and in-house production facilities that cover everything from wafer fabrication to packaging. We began technical exchanges with ROHM in 2017 and are currently exploring possibilities for deeper collaboration. This partnership was made possible due to ATX’s track record and technical expertise in the back-end manufacturing of GaN devices. Looking ahead, we also plan to collaborate on ROHM’s ongoing development of automotive-grade GaN devices. By strengthening our partnership, we aim to contribute to energy conservation across various industries and the realization of a sustainable society.”　　Satoshi Fujitani, General Manager, AP Production Headquarters, ROHM Co., Ltd.　　“We are delighted to have successfully produced 650V GaN HEMTs in the TOLL package, achieving sufficient performance. ROHM not only offers standalone GaN devices but also provides power solutions that combine them with ICs, leveraging ROHM’s expertise in analog technology. The knowledge and philosophy cultivated in the design of these products are also applied to device development. Collaborating with OSATs such as ATX, that possess advanced technical capabilities, allows us to stay ahead in the rapidly growing GaN market while utilizing ROHM’s strengths to bring innovative devices to market. Going forward, we will continue to enhance the performance of GaN devices to promote greater miniaturization and efficiency in a variety of applications, contributing to enrich people's lives.”　　EcoGaN™ Brand       Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples       Power supply for servers, communication base stations, industrial equipment and more.　　AC adapters (USB chargers), PV inverters, ESS (Energy Storage System).　　In a wide range of power supply systems with output power of 500W to 1kW class can be installed.　　Online Sales InformationSales Launch Date: December 2024　　Applicable Part No: GNP2070TD-ZTR　　The products will be available at DigiKey™, Mouser™ and Farnell™ from March, and will also be offered at other online distributors as they become available.　　Online Sales Information       Sales Launch Date: December 2024       Applicable Part No: GNP2070TD-ZTR　　　　About ATX SEMICONDUCTOR (WEIHAI) CO., Ltd.       ATX is an OSAT company based in Weihai, Shandong Province China, specializing in the assembly and testing of power devices. We support over 50 types of packages, including MOSFETs, IGBTs, SiC, and GaN devices, with an annual production capacity exceeding 5.7 billion units. ATX’s products are widely used in industrial equipment, automotive systems, renewable energy applications such as solar power, and consumer electronics. Notably, we hold a strong market share in the electric vehicle control sector, supplying internationally recognized brands.　　As a leading company in next-generation semiconductor device development utilizing proprietary intellectual properties and core technologies, ATX has established close, long-term collaborative relationships with the world’s top 10 power device companies.　　For more information, please visit ATX’s website: http://www.atxwh.com/　　Terminology       GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is gaining adoption for its superior properties (over silicon), including exceptional high-frequency characteristics. HEMT stands for High Electron Mobility Transistor.　　RDS(ON) × Qoss　　An index for evaluating device performance, where Qoss represents the total output-side amount of charge between the drain and source. RDS(ON) refers to the on-state resistance between the Drain and Source of a MOSFET. The smaller RDS(ON) is, the lower the (power) loss during operation. Minimizing the product of these two leads to more efficient the switching operation and reduced switching losses.
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Release time：2025-03-11 09:14 reading：337 Continue reading>>
How to recognize and prevent damage to circuit boards from over<span style='color:red'>heat</span>ing?
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How to recognize and prevent damage to circuit boards from overheating?

　　Recognizing and preventing overheating damage to circuit boards is crucial for ensuring the reliability and longevity of electronic devices. Here are some guidelines to help you identify signs of overheating and prevent damage:　　Recognizing PCB Overheating　　Unusual Smells:　　Sign: Burning or unusual odors.　　Cause: Overheating components can release distinct smells due to solder or other materials reaching high temperatures.　　Discoloration:　　Sign: Darkened or discolored areas on the circuit board.　　Cause: Excessive heat can lead to discoloration of the PCB or nearby components.　　Visual Inspection:　　Sign: Distorted or melted components.　　Cause: Overheating can cause physical damage, such as distortion or melting of plastic or metal components.　　Malfunctioning Components:　　Sign: Erratic behavior, intermittent failures, or complete failures.　　Cause: Overheating can damage or degrade electronic components, leading to malfunctions.　　Preventing PCB Overheating　　Proper Ventilation:　　Action: Ensure that electronic devices have proper ventilation to dissipate heat.　　Considerations: Adequate airflow and proper placement of components can prevent the buildup of heat.　　Heat Sinks and Fans:　　Action: Use heat sinks and fans to dissipate heat from critical components.　　Considerations: Heat sinks absorb and transfer heat away from components, while fans increase airflow.　　Thermal Design:　　Action: Implement a proper thermal design for the circuit board.　　Considerations: Distribute heat-generating components evenly, and use materials with good thermal conductivity.　　Temperature Monitoring:　　Action: Implement temperature monitoring systems.　　Considerations: Use temperature sensors to monitor critical areas and trigger alarms or shutdown procedures if temperatures exceed safe limits.　　Proper Component Selection:　　Action: Choose components with appropriate power ratings and thermal characteristics.　　Considerations: Select components that can handle the expected heat dissipation without exceeding their specified limits.　　Controlled Ambient Conditions:　　Action: Ensure that electronic devices are used within specified environmental conditions.　　Considerations: High ambient temperatures can contribute to overheating; maintain the operating environment within recommended limits.　　Regular Maintenance:　　Action: Perform regular inspections and maintenance.　　Considerations: Dust accumulation can impede airflow and contribute to overheating; clean devices periodically.　　Optimized Power Supply:　　Action: Use an optimized and stable power supply.　　Considerations: Fluctuations or improper power supply can lead to increased heat generation; ensure stable and appropriate voltage levels.　　By implementing these measures, you can both identify signs of overheating and take proactive steps to prevent damage to circuit boards in electronic devices.　　What are the hazards of circuit board overheating ?　　Circuit board overheating can lead to various hazards and adverse effects, potentially causing damage to electronic components, reducing the lifespan of devices, and posing safety risks. Here are some hazards associated with circuit board overheating:　　• Component Damage:　　Risk: Overheating can cause semiconductor devices, resistors, capacitors, and other electronic components to degrade or fail.　　Consequence: Malfunctioning or damaged components can lead to device failures, data loss, or system instability.　　• Reduced Lifespan:　　Risk: Prolonged exposure to high temperatures can significantly reduce the lifespan of electronic components.　　Consequence: Devices may experience premature failures, requiring more frequent replacements or repairs.　　• Thermal Stress:　　Risk: Rapid temperature changes or uneven heating can result in thermal stress on the circuit board and its components.　　Consequence: Thermal stress may cause solder joints to crack or weaken, leading to intermittent connections or complete failures.　　• Fire Hazard:　　Risk: Overheating, especially in extreme cases, can pose a fire hazard.　　Consequence: Ignition of flammable materials, such as PCB substrates, insulation, or nearby components, may lead to fire incidents.　　• Data Loss:　　Risk: Overheating can affect storage devices, including hard drives and solid-state drives.　　Consequence: Critical data stored on the affected devices may become corrupted or permanently lost.　　• Electromagnetic Interference (EMI):　　Risk: Overheating can lead to increased electromagnetic interference.　　Consequence: EMI may negatively impact the performance of nearby electronic devices or systems, leading to communication errors or malfunctions.　　• Safety Risks:　　Risk: Overheating can compromise the safety of electronic devices.　　Consequence: Devices used in safety-critical applications, such as medical equipment or automotive systems, may experience failures that pose risks to users.　　• Warranty Voidance:　　Risk: Manufacturers often specify operating temperature ranges for electronic devices.　　Consequence: Overheating may void warranties, leaving users responsible for repair or replacement costs.　　• Environmental Impact:　　Risk: Overheated devices may not comply with environmental regulations.　　Consequence: The disposal of damaged or non-compliant electronic devices can contribute to environmental pollution.
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Release time：2024-04-28 10:00 reading：510 Continue reading>>
What is a <span style='color:red'>heat</span> sink in the electronic components?
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What is a heat sink in the electronic components?

　　In the world of electronic components, heat sinks play a vital role. As a device specifically designed to dissipate the heat generated by electronic components, the heat sink plays an irreplaceable role in maintaining the stability and reliability of electronic equipment. This article will introduce in detail the definition, classification, role and application of heat sinks in electronic components, and discuss their design principles and maintenance methods.　　The definition and function of heat sinkA heat sink is a device used to absorb, conduct, and dissipate heat generated by electronic components. In electronic components, the main functions of the heat sink include:　　Heat dissipation: Heat sinks absorb the heat generated by electronic components and dissipate it into the surrounding environment, thereby preventing electronic components from overheating.　　Prevent component damage: Overheating is one of the main causes of damage to electronic components. By using a heat sink, we can effectively reduce the operating temperature of electronic components, thereby extending their service life.　　Classification of heat sinksDepending on material, form and function, heat sinks can be divided into the following categories:　　Classification according to material: heat sinks can be made of aluminum, copper, steel and other metal materials. Heat sinks made of different materials have different thermal conductivity properties and weight.　　Classification according to form: heat sinks can be divided into flat type, fin type, water-cooled type, etc. Flat-plate heat sinks are suitable for low-power electronic components, fin-type heat sinks are suitable for medium to high-power electronic components, and water-cooled heat sinks are suitable for high-power electronic components.　　According to functional classification: heat sinks can be divided into passive heat sinks and active heat sinks. Passive heat sinks usually use methods such as increasing surface area and heat transfer media to improve heat dissipation efficiency, while active heat sinks use active driving methods such as fans and heat pipes to improve heat dissipation efficiency.　　Application of heat sinks in electronic componentsIn electronic components, heat sinks are widely used in various fields. Here are some specific application examples:　　Integrated Circuits (ICs): In integrated circuits, a large amount of heat is generated due to the high level of integration and dense transistor layout. In order to ensure the normal operation and stability of the IC, a heat sink is usually required for heat dissipation.　　Transistors: Transistors are key components in many electronic devices, and their performance is affected by temperature. By using a heat sink, the operating temperature of the transistor can be reduced, thereby improving its performance and reliability.　　Sensors: Many sensors (such as temperature sensors, touch sensors, etc.) require accurate measurement of ambient temperature or pressure. Using a heat sink can help the sensor maintain stable performance, thereby improving measurement accuracy.　　Design principles and maintenance methods　　Design Principles: When designing and selecting a heat sink, the following factors need to be considered:　　(1)- Structure: The appropriate heat sink structure should be selected according to the shape and size of the electronic components.　　(2)- Materials: Appropriate materials should be selected according to the power of electronic components and the working environment. For example, aluminum and copper have better thermal conductivity, while steel has higher strength.　　(3)- Process: Mature processes should be selected to ensure the quality and reliability of the heat sink.Maintenance methods: To ensure the normal operation of the heat sink and extend its service life, here are some suggestions:　　(1)- Regular cleaning: Regularly remove dust and other impurities on the surface of the heat sink to improve its heat dissipation efficiency.　　(2)- Check fasteners: Regularly check and tighten the fasteners between the heat sink and electronic components to ensure good heat conduction.　　(3)- Replace thermal grease: When the thermal grease is found to be dry or hardened, new thermal grease should be replaced in time to ensure smooth heat conduction.　　(4)- Avoid collisions and vibrations: Try to avoid collisions and vibrations to avoid damage to the heat sink and electronic components.ConclusionIn electronic components, heat sinks play a vital role. By absorbing, conducting and dissipating the heat generated by electronic components, heat sinks help maintain the stability and reliability of electronic equipment. This article details the classification, functions and applications of heat sinks, as well as design and maintenance methods. With the continuous development of science and technology, we can foresee that more new and efficient heat dissipation technologies will be used in the field of electronic components in the future.
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Release time：2023-11-02 14:58 reading：2281 Continue reading>>
'No one can take us down,' China's state-run media claims as trade war <span style='color:red'>heat</span>s up
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'No one can take us down,' China's state-run media claims as trade war heats up

U.S. President Donald Trump, left, and Xi Jinping, China's president, shake hands during a news conference at the Great Hall of the People in Beijing, China, on Thursday, Nov. 9, 2017.China's state-run media outlets sounded a confident tone in Monday editorials and warned that U.S. trade pressure against the country would not only strain bilateral relations between the two nations but could negatively affect the American economy and wider global markets.Those reactions followed the latest round of mutual tariffs targeting U.S. and Chinese goods taking effect Monday, escalating trade tensions between the world's two largest economies.The U.S. levied tariffs of 10 percent on $200 billion of Chinese products with the rate set to increase to 25 percent by the end of the year. The Chinese government retaliated with taxes on 5,207 U.S. imports worth about $60 billion. Before Monday's penalties took effect, the U.S. and China had already applied tariffs to $50 billion of each other's goods.In Monday editorials, Chinese state-controlled newspapers such as Global Times and China Daily's editorial pages were quick to claim that Beijing had stayed calm and fair in the face of Washington's trade pressure.If the U.S. is using trade pressure as a negotiating tactic against Beijing, it would jeopardize both countries' economies and the effects would likely spill over to the larger global economy, an editorial published by China Daily on Monday said."The US' unilateral trade moves have not only damaged normal China-US trade activities, but also could stunt world economic growth," the state-controlled newspaper reported. "So if the Trumpadministration continues to stick to its unilateral and protectionist stance, and refuses to respect the fundamental norms of mutual respect and consultation, it would be difficult for the two sides to make substantial progress in any future trade talks."The editorial added that China has remained sincere in its efforts for a fair trading agreement, in contrast to U.S. "trade bullying."Other media editorials highlighted the broader erosion of U.S.-China relations as a result of Washington's accusations about unfair business and regulatory practices benefiting Beijing.For one, China Daily claimed in another editorial that America's accusations of China engaging in "theft" and forced transfer of intellectual property and other "unfair" trade practices may strain the longstanding consensus between both countries.As such, if U.S. trade measures against China were meant as a bargaining chip in negotiations "they may actually end up rendering further engagement even more difficult, if not completely impossible," the editorial said.For its part, the Global Times, China's hyper-nationalistic Communist Party-run tabloid, in a Monday editorial called for Americans to recognize China's strength in the trade disagreements."China is doing what it should. China is honest and principled and a major trade power with intensive strengths. No one can take us down," it said.
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Release time：2018-09-28 00:00 reading：979 Continue reading>>
U.S.-China trade war <span style='color:red'>heat</span>s up with semiconductor industry caught in the middle
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U.S.-China trade war heats up with semiconductor industry caught in the middle

U.S. Government Imposes Tariffs on $200 Billion of Goods and China Retaliates on $60 Billion of GoodsEarlier this week, the U.S. Trade Representative (USTR) released a 10 percent tariff on $200 billion in imports from China, including more than 90 tariff lines central to the semiconductor industry.The 10 percent tariff will take effect on September 24, 2018, and rise to 25 percent on January 1. These tariff lines will cost SEMI’s 400 U.S. members tens of millions of dollars annually in additional duties. However, counting the products included in the previous rounds of tariffs, the total estimated impact exceeds $700 million annually. China has already announced that it will respond with tariffs on $60 billion worth of U.S. goods. In his notice, President Trump said the U.S. will impose tariffs on $267 billion worth of goods if China retaliates.The U.S. government removed 279 total tariff lines, including three lines that impact our industry: silicon carbide, tungsten, and network hubs used in the manufacturing process.As we’ve noted, intellectual property is critical to the semiconductor industry, and SEMI strongly supports efforts to better protect valuable IP. However, we believe that these tariffs will ultimately do nothing to address the concerns with China’s trade practices. This sledgehammer approach will introduce significant uncertainty, impose greater costs, and potentially lead to a trade war. This undue harm will ultimately undercut our companies’ ability to sell overseas, which will only stifle innovation and curb U.S. technological leadership.Product Exclusion Process – List 2USTR formally published the details for the product exclusion process for products subject to the List 2 China 301 tariffs (the $16 billion tariff list). If your company’s products are subject to tariffs, you can request an exclusion.In evaluating product exclusion requests, the USTR will consider whether a product is available from a source outside of China, whether the additional duties would cause severe economic harm to the requestor or other U.S. interests, and whether the product is strategically important or related to Chinese industrial programs (such as “Made in China 2025”)The request period ends on December 18, 2018, and approved exclusions will be effective for one year, applying retroactively to August 23, 2018. Because exclusions will be made on a product basis, a particular exclusion will apply to all imports of the product, regardless of whether the importer filed a request.
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Release time：2018-09-26 00:00 reading：1206 Continue reading>>
Spin current from <span style='color:red'>heat</span>: new material increases efficiency
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Spin current from heat: new material increases efficiency

　　Physicists at Bielefeld University have found a way to use the heat from electronic devices to create energy, applying the heat to generate magnetic signals known as ‘spin currents’.　　According to researchers it could be possible in the future to use these signals to replace some of the electrical current currently used in electronic components.　　In a new study, physicists from the University of Greifswald, Gie?en University, and the Leibniz Institute for Solid State and Materials Research in Dresden tested which materials generated this spin current most effectively from heat. Their findings have been published in the research journal ‘Nature Communications’.　　The Bielefeld physicists are working on the basic principles for making data processing more effective and energy-efficient in the young field of ‘spin caloritronics’ and the study determines the strength of the spin current for various combinations of thin films.　　A spin current is produced by differences in temperature between two ends of an electronic component. These components are extremely small and only one millionth of a millimetre thick. Because they are composed of magnetic materials such as iron, cobalt, or nickel, they are called magnetic nanostructures.　　The physicists take two such nanofilms and place a layer of metal oxide between them usually only a few atoms thick. One of the external films is then heated and then electrons with a specific spin orientation then pass through the metal oxide. This produces the spin current.　　The teams led by Dr. Alexander B?hnke and Dr. Torsten Hübner have tested different combinations of ultra-thin films. ‘Depending on which material we used, the strength of the spin current varied markedly,’ says B?hnke. ‘That is because of the electronic structure of the materials we used.’　　According to the researchers, magnetic nanostructures with special combinations made up of cobalt, iron, silicon, and aluminium were particularly productive.　　The study is one of a number of projects in the ‘Spin Caloric Transport’ (SpinCaT) Priority Programme of the German Research Foundation (DFG).
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Release time：2017-11-21 00:00 reading：1087 Continue reading>>
Why Memory Prices Are Heating Up
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Why Memory Prices Are Heating Up

　　The issue of increasing memory prices is more complicated than many people think.　　DRAM and NAND prices are going up and projected to rise further, according to market analysts. Many people perceive the current memory market situation as a temporary imbalance between supply and demand. Or, they expect the market to settle when the manufacturing of 3D NAND flash reaches maturity. However, In case of DRAM market, no one knows when DRAM supplies will improve.　　Observing the demand, although some market segments are growing, there are no killer applications or booming market segments. Therefore, the problem originates from the supply side.　　According to Micron, DRAM bit growth is expected to be 15 to 20 percent in 2017 (noted below), the lowest bit growth in the last 20 years. Such small bit growth comes from DRAM scaling limitations. There has not been any news regarding DRAM scaling for a while. When bit growth is below 45 percent, it is a seller market. Thus, the DRAM oligopoly, slow bit growth, and sluggish fab expansion results in a long-term, tight supply. Ultimately, DRAM prices could increase without any improvements in supply.　　There is extreme competition in the NAND market. Based on expectations that 3D NAND will significantly improve productivity, all NAND vendors invested billions of dollars in 3D NAND manufacturing. Therefore, oversupply was expected a while ago. However, this expectation proved false. 3D NAND had been more difficult to fabricate than previously thought. Currently, a few NAND vendors are struggling to ship 3D NAND.　　Many analysts expect relief of supply when the manufacturing of 64-layer and 96-layer 3D NAND flash reaches maturity in late 2018. So, will there be enough NAND supply next year? As shown in the plot, lateral scaling (i.e. Moore’s Law) of planar NAND increases bit cell EXPONENTIALLY in a manner of power of 2. In contrast, the number of cell layers (i.e. vertical scaling) of 3D NAND increases bit cells LINEARLY. For the time being, planar NAND meets the exponential demand growth of bit cells based on Moore’s Law. Now that planar NAND faces scaling limitations, 3D NAND will have difficulties meeting the demand with just linear bit growth.　　64-layer 3D NAND finally reaches price parity with planar NAND. For double and quadruple the memory sizes, 3D NAND should be 128-layer and 256-layer, respectively. Considering accumulated yield loss, manufacturing difficulties, and low wafer throughput, memory size expansion beyond 64-layer is a big challenge for 3D NAND. If 3D NAND reaches price parity with planar NAND at 1-layer, then it would be much easier to expand memory size vertically.　　As discussed, high memory prices are not simply due to the imbalance of supply and demand anymore. It will be very difficult to see a cool down of memory prices from now on, because such high memory prices come from scaling limitations of memory devices. Ironically, memory vendors are making big money based on these memory scaling limitations. From the top five semiconductor ranking, three of them are memory vendors in the first half of 2017. SK Hynix and Micro, for example, heavily depend on DRAM because 75 percent and 65 percent of their revenue comes from the DRAM market, respectively.　　For the time being, buyers could control the memory price and memory products have been disregarded as commodity. Now, it is a golden age for memory vendors and high memory prices will become a burden for buyers. That’s right, memory will become a seller’s market because of memory scaling limitations. How can we find a solution for high memory price? In 2016 and 2017, technology roadmaps (such as ITRS and IRDS) strongly recommend GAA (Gate All Around) transistors for continuation of transistor scaling and M3D (Monolithic 3D) IC for low manufacturing costs. So, customers should seek ultra-low cost memory devices proactively, where “GAA + M3D” is being utilized. Otherwise, customers will pay more for memory components and such high memory prices will become problematic for most electronic devices and systems.
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Release time：2017-09-06 00:00 reading：1122 Continue reading>>
Embedded MRAM Can Take the Heat
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Embedded MRAM Can Take the Heat

　　On the heels of several foundries publicly announcing plans to put MRAM into production by the end of this year and into 2018, one of them has outlined how it can significantly improve data retention for embedded applications.　　At the recent 2017 International Symposium on VLSI Technology, Systems and Applications in Japan, Globalfoundries outlined in a technical paper Everspin Technologies' progress with moving embedded MRAM (eMRAM) forward into the 22nm process node.　　In a telephone interview with EE Times, Dave Eggleston Globalfoundries' vice president of embedded memory, said the key breakthrough highlighted in the paper is the ability for eMRAM to retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. This will enable eMRAM to be used for general purpose MCUs and automotive SOCs, he said. “The thermal stability has not been there for the magnetic layers. If you solve that data retention problem then it opens up much wider markets," he added.　　MRAM had demonstrated non-volatility, high reliability and manufacturability in previous technology nodes, Eggleston said, but has been challenged to scale to 2x nm node geometries and BEOL compatibility process temperatures for embedded memories. As outlined in the paper, the magnetic tunnel junction (MTJ) stack and integration was been optimized for a 400 degree Celsius, 60-minute post-MTJ patterning thermal budget and compatible with CMOS BEOL.　　The three major foundries are all introducing it as a product and customers are picking up GlobalFoundries' PDK to started designing for it, said Eggleston. The major fab equipment makers started getting involved several years ago because they believed there was enough business, so the tools are available for deposition and etch of the MTJ. “They invested and developed products in conjunction with large fabs like us and with small companies such as Everspin," Eggleston said.　　MCU customers, in the meantime, have started seriously looking at how MRAM can enhance their architectures, said Eggleston. “They get faster write speed and they get higher endurance," he said. This gives them the capability to use embedded MRAM where they might have previously used SRAM. Eggleston said the 2x nm node is the sweet spot in terms of circuitry simplicity and manufacturing costs.　　The market opportunity for eMRAM is not dissimilar to those of other emerging memory technologies as well as incumbents: new high-volume markets include mobility, networking, data centers, Internet of Things (IoT) and automotive, said Eggleston. For Globalfoundries, the latter two are the most relevant. “We used to say they were largely the same, but as a foundry we got lots of traction in automotive," he said.　　eFlash has been the incumbent embedded memory, but there are many emerging options that can potentially address these markets, said Eggleston. In addition to eMRAM, there is phase change memory (PCM), embedded Resistive RAM (eRRAM), carbon nanotube (CNT) and ferroelectric (FeFET). All have tradeoffs when it comes to retention, efficiency and speed, he said. Both CNT and FeFET show promise, but are too immature, while PCM is too specialized and fading away from embedded applications.　　“MRAM and RRAM both have similar capabilities," said Eggleston. “They're both backend aligned memories so that gives you the ability to pretty easily implement them into a logic process." Processes include those that require bulk silicon, FD-SOI or FinFET. eFlash is built down into the silicon, he said, and would be more challenging to build into all of those variants.　　RRAM is a simpler stack, said Eggleston, as there are fewer materials required between the electrodes. “It also doesn't require the same investment in equipment MRAM does," he said. "MRAM certainly requires unique capital equipment to do that complex stack." However, he said, RRAM hasn't shown the ability to provide the data retention, speed, and endurance balance required by the broader market.　　What MRAM offers over RRAM is versatility, said Eggleston, because its material composition can be tuned between electrodes. “You can tune it either for great data retention or for really fast write speed and endurance," he said. This tuneability, he added, will enable Globalfoundries to address the space at advanced nodes previously addressed by eFlash, as well as tune it for speed for use as a non-volatile cache in server processors and storage controllers.
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Release time：2017-06-30 00:00 reading：1084 Continue reading>>
Toyota Selects Nvidia, Intel Feels Heat
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Toyota Selects Nvidia, Intel Feels Heat

　　Nvidia revealed Wednesday at its GPU Technology Conference that Toyota will use Nvidia’s Drive PX AI automotive platform to power advanced autonomous driving systems planned for market introduction.　　Mike Demler, a senior analyst at The Linley Group, described Toyota’s move as “potentially a big deal.”　　In the brewing battle between Nvidia’s AI car computing platform and an Intel-Mobileye platform, Nvidia now appears to be building momentum.　　According to Egil Juliussen, director research, Infotainment & ADAS at IHS Automotive, Toyota has become the fourth major car OEM publicly committed to Nvidia’s Drive PX for their highly automated vehicle. The other three OEMs are Audi, Daimler, and VW Group.　　In addition to those OEMs — which include the world’s two biggest carmakers Toyota and VW, Juliussen added that Nvidia also previously picked up smaller OEMs including Volvo, Tesla and Nio (formerly known as NextEV). Since tier ones such as Bosch and ZF have also embraced Nvidia’s hardware platform, Juliussen believes that this “will probably help Nvidia getting other OEMs on board.”　　Demler, who attended Nvidia’s conference Wednesday, also noted that Argo.ai, Ford’s autonomous driving group, gave a presentation on “Deep Learning in Argo.ai’s Autonomous Vehicles.”　　Of course, it’s important to note that the automotive industry is “still in a very early stage of development for Level 4 and Level 5 self-driving cars,” cautioned Demler. It’s premature to declare any platform’s victory. Juliussen noted that “other platforms for autonomous driving are likely to appear.”　　But so far, it’s hard to deny that Nvidia is picking up steam.　　Toyota’s deal　　A year ago, Toyota Research Institute CEO Gill Pratt came to Nvidia’s conference to deliver a keynote speech, in which he emphasized why simulation is the key to autonomous driving. By leveraging Nvidia’s GPU-powered platform and developing simulation programs, Pratt explained that it’s incumbent upon researchers at the Toyota Research Institute to tackle “corner cases” that happen rarely during trillions of miles of driving in the real world.　　Without simulations to augment learning from huge quantities of real-world data, miles of cumulative driving alone won’t help the industry find answers for such edge cases, he explained.
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Release time：2017-05-11 00:00 reading：1201 Continue reading>>
Rambus, Microsoft Heat Up With Cold DRAM
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Rambus, Microsoft Heat Up With Cold DRAM

　　A community of computer scientists striving to respond to soaring system demand for real-time data processing has just received some good news.　　Rambus revealed Monday (April 17) that the company, in collaboration with Microsoft researchers, will have an early prototype of cryogenic memory in a month, and a more complete one by the end of the year. The new technologies will be essential to data centers, “currently the fastest growing consumer of memory” in the industry, Craig Hampel, chief scientist at Rambus, told EE Times.　　The new memory subsystems will be able to operate below minus?180 °C or minus?292.00 °F or 93.15 kelvin. This will substantially reduce energy consumption and improve the overall performance of a bank of computers deployed in the cloud for massive data processing, he explained.　　Rambus and Microsoft struck a deal in late December, 2015 to pool resources and develop memory systems for next-generation quantum computing.　　Rambus’ announcement on Monday is the first tangible result of the joint efforts. Such cryogenic techniques mark a significant change in DRAM operating temperatures.　　However, during the initial partnership announcement, the two companies did not mention the development of cryogenic DRAM. Instead, they appeared more interested in developing memory systems for next-generation quantum computing. So, how does their latest announcement relate to that?　　Hampel explained that this all fits into a greater strategy to advance systems to superconducting computing and ultimately to quantum computing. Rambus explained that by breaking down the cryogenic systems’ long-term goal for quantum computing in bite size, they have applied the new technologies to prototyping DRAM that can operate below 90 kelvin.　　The U.S. National Institute of Standards and Technology has chosen to consider the field of cryogenics as that involving temperatures below minus?180 °C or minus?292.00 °F or 93.15 kelvin (K).　　Conventional DRAM operates at room temperature – roughly at 350 and 350 K. By cooling down to 90 K, “you bring down the leakage to zero, while achieving higher performance at a much lower temperature,” explained Hampel.　　Once you bring the temperature down to 7 K, that’s when you get into the superconducting domain, he added. “It allows all of the interconnect power to become zero.”　　To get to quantum computing, however, cryogenic memory must “operate at 20 to 40 millikelvin, which is essentially colder than deep space,” said Hampel.　　Thus far, by succeeding in a DRAM prototype that works at colder than 90 K, Rambus is “hopeful,” said Hampel, that this leads to “better DRAM scaling, lowering cost and increasing reliability” in subsystems currently under tremendous thermal stress.　　The goal is a cryogenic memory subsystem in the next two to three years, according to Hampel.　　To get there, the Rambus-Microsoft partnership is still missing a third leg: DRAM and foundry suppliers. Rambus isn’t announcing that today but will soon need to address it.　　In search of new memory architecture　　Looking back on Rambus’ history, Hampel said, “We have always pushed the new memory architecture” in new markets. In the late ’80s to early ’90s, Rambus went after the PC market with its proprietary memory technologies, and ended up entangled in a standards war. Then, by mid-1990s, Rambus shifted focus to the video game console market, getting its RDRAM adopted by Nitendo 64 and Sony’s PlayStation.　　As the growth of PCs and game consoles have slowed and smartphones are getting fragmented, Hampel said, “We approached Microsoft for partnership,” as both companies identified data centers as “the best home for new memory innovation.”
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Release time：2017-04-17 00:00 reading：1072 Continue reading>>

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