Spin current from heat: new material increases efficiency

Release time:2017-11-21
author:Ameya360
source:Neil Tyler
reading:1087

  Physicists at Bielefeld University have found a way to use the heat from electronic devices to create energy, applying the heat to generate magnetic signals known as ‘spin currents’.

  According to researchers it could be possible in the future to use these signals to replace some of the electrical current currently used in electronic components.

  In a new study, physicists from the University of Greifswald, Gie?en University, and the Leibniz Institute for Solid State and Materials Research in Dresden tested which materials generated this spin current most effectively from heat. Their findings have been published in the research journal ‘Nature Communications’.

  The Bielefeld physicists are working on the basic principles for making data processing more effective and energy-efficient in the young field of ‘spin caloritronics’ and the study determines the strength of the spin current for various combinations of thin films.

  A spin current is produced by differences in temperature between two ends of an electronic component. These components are extremely small and only one millionth of a millimetre thick. Because they are composed of magnetic materials such as iron, cobalt, or nickel, they are called magnetic nanostructures.

  The physicists take two such nanofilms and place a layer of metal oxide between them usually only a few atoms thick. One of the external films is then heated and then electrons with a specific spin orientation then pass through the metal oxide. This produces the spin current.

  The teams led by Dr. Alexander B?hnke and Dr. Torsten Hübner have tested different combinations of ultra-thin films. ‘Depending on which material we used, the strength of the spin current varied markedly,’ says B?hnke. ‘That is because of the electronic structure of the materials we used.’

  According to the researchers, magnetic nanostructures with special combinations made up of cobalt, iron, silicon, and aluminium were particularly productive.

  The study is one of a number of projects in the ‘Spin Caloric Transport’ (SpinCaT) Priority Programme of the German Research Foundation (DFG).

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Spin Transfer, TEL Partner on MRAM Process Development
  MRAM developer Spin Transfer Technologies (STT) and capital equipment vendor Tokyo Electron Ltd. (TEL) have entered into a collaborative engineering program to jointly develop process technologies for SRAM- and DRAM-class spin-transfer torque (ST) MRAM devices.  The project will combine TEL's ST-MRAM deposition tool and knowledge of the formation capabilities of magnetic tools with STT's high-endurance perpendicular magnetic tunnel junction (pMTJ) design and device fabrication technology, the companies said. The goal of the project is to further advance ST-MRAM to provide previously unachievable levels of speed, density and endurance, they said.  MRAM (magnetoresistive random access memory) has long been seen as a potential replacement for SRAM, DRAM and flash, but development, which began in earnest in the 1990s, has been slow. To date, only one company, Everspin Technologies, has shipped working MRAM products. Everspin has been shipping MRAM since 2006, when it was part of Freescale Semiconductor, and claims to have shipped more than 60 million MRAM devices.  Embedded SRAM — pervasive in mobile, computing and industrial applications — is considered a fast and high endurance memory, but is also costly, power hungry and volatile. ST-MRAM, which is more compact, is considered less costly, nonvolatile and requires less power when storing data. But further improvements — especially in terms of fast switching and endurance — are needed for ST-MRAM to match or exceed SRAM performance.  Last August, Everspin became the first vendor to announce it was sampling MRAM with pMTJs — considered by all vendors developing MRAM to be the technology offer the best scalability, shape dependence and magnetic scalability. In January of this year, STT also began sampling pMTJs.  STT and TEL said the collaborative agreement would further each company's goal of offering compelling MRAM solutions for the embedded SRAM market initially and, eventually, the standalone DRAM market. The companies aim to develop MRAM is pMTJs smaller than 30nm, more dense than today's commercially available products.  Tom Sparkman, who took over as CEO of STT in July, said in a press statement that the partnership with TEL would speed the development of the company's technology for replacing SRAM and DRAM.  "We believe the adoption of ST-MRAM will materially exceed current expectations, and we are excited to work with TEL to revolutionize the ST-MRAM market by achieving the speed, density and endurance the industry needs,"
2017-10-17 00:00 reading:2282
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