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Fibocom-Powered Robotic Mower Solution Featured at SPOGA+GAFA 2025, Pioneering the Future of Boundary-Free Smart Lawn Care

　　Cologne, Germany – June 24, Fibocom, a global leader incommunication modules and AI solutions, had its state-of-the-art intelligentrobotic lawn mower solution prominently showcased at SPOGA+GAFA 2025, theworld’s leading trade fair for the garden and outdoor living industry. Multiplerobotic lawn mowers powered by Fibocom’s technology demonstrated seamlessnavigation across simulated garden environments—autonomously detectingboundaries, planning precise mowing routes, and avoiding obstacles—all withoutrelying on traditional physical perimeter wires. This impressive demonstrationhighlighted the disruptive potential of AI-driven, boundary-free lawn caresolutions.　　The global smartrobotic mower market holds vast potential, with Europe and North Americaaccounting for 72% of the world’s 250 million private gardens. Yet, adoptionremains low—under 6% in North America and 10–30% in Europe—highlightingsubstantial room for growth as demand for intelligent lawn care accelerates.　　Fibocom’ssolution integrates advanced AI vision, multi-sensor fusion, and intelligentnavigation to eliminate the need for traditional boundary wires. This enablesrobotic mowers to autonomously detect perimeters and obstacles, ensuring safe,efficient, and precise operation while significantly improving mowing productivity.It’s worth mentioning that, having accumulated over 350,000 kilometers ofreliable autonomous performance worldwide, this solution has proven itsrobustness in diverse and complex garden environments.　　Fibocom provides two solution variantstailored to diverse customer needs: a standard pure-vision model and a flagshipversion combining binocular VIO (Visual-Inertial Odometry) with RTK (Real-TimeKinematic) for superior stability, precision, and large-area coverage—ideal forprofessional and commercial applications. This comprehensive suite, encompassingstereo cameras, AI processing boards, motor control units, and customizablemobile applications, enables OEM partners to accelerate product developmentcycles and focus resources on product differentiation and go-to-marketstrategies. For end users, it revolutionizes lawn care with smart mapping,autonomous operation, and auto-recharging for a safer, easier experience.　　Strategic partnerships with top global brandsare fast-tracking the launch of Fibocom-powered products in key internationalmarkets over the next six months, underscoring Fibocom’s technologicalleadership and growing influence in the smart lawn care industry. Leveragingcutting-edge innovation and manufacturing excellence, Fibocom empowers partnersto penetrate top-tier European retail channels and scale globally, where everyimpeccably maintained lawn showcases the strength of Chinese smartmanufacturing on the world stage.

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Fibocom

Release time：2025-07-11 11:28 reading：143 Continue reading>>

Murata Unveils First High-Frequency XB<span style='color:red'>AR</span> Filter for Next-Gen Networks

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Murata Unveils First High-Frequency XBAR Filter for Next-Gen Networks

　　Murata Manufacturing Co., Ltd. has announced the mass production and commercial shipment of the world’s first*1 high-frequency filter using XBAR technology*2. Developed by combining Murata’s proprietary Surface Acoustic Wave (SAW) filter expertise with XBAR technology from Murata's subsidiary Resonant Inc., it enables the extraction of desired signals while achieving both low insertion loss and high attenuation. These features are critical for the latest wireless technologies, including 5G, Wi-Fi 6E, Wi-Fi 7, and emerging 6G technologies.　　The demand for reliable high-frequency communications continues to grow in response to the widespread deployment of 5G and the future development of 6G. Simultaneously, wireless local-area network (WLAN) standards such as Wi-Fi 6E and Wi-Fi 7 are expanding into higher frequency domains to accommodate ultra-fast data rates. Filters used in these applications must address key challenges, such as preventing out-of-band interference, maximizing system battery performance, and meeting strict space limitations. Traditional approaches using Low Temperature Co-Fired Ceramic (LTCC) or conventional Bulk Acoustic Wave (BAW) filters often fall short in these performance areas.　　Murata’s new XBAR-based filter addresses these limitations by achieving high attenuation performance while maintaining a wide bandwidth and low signal loss. The XBAR structure itself excites bulk acoustic waves using comb-shaped electrodes and a piezoelectric single-crystal thin film, enabling performance beyond the reach of conventional filter structures. It effectively removes high-frequency interference, even in bands above 3 GHz, allowing for clearer signal detection and better performance, contributing to high-speed, high-capacity, and high-quality wireless communication.　　Key performance parameters include a passband of 5150–7125 MHz, a typical insertion loss of 2.2 dB, and a typical return loss of 17 dB. Typical attenuation figures are 11 dB at 4800–5000 MHz, 28 dB at 3300–4800 MHz, 27 dB at 7737–8237 MHz, and 26 dB at 10300–14250 MHz.　　The new filter is targeted at devices with embedded wireless functionality, including smartphones, wearables, notebook PCs, and communication gateways, offering an optimal balance of performance and cost efficiency. Murata will continue to drive innovation in filter technologies to support the evolution of wireless communications, and expects this architecture to scale further, with future product generations capable of operating effectively in ultra-high frequency bands above 10GHz.　　Notes　　*1According to Murata research as of July 7, 2025.　　*2XBAR technology: Murata’s proprietary filter structure that excites bulk acoustic waves using comb-shaped electrodes and piezoelectric single-crystal thin films.

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Murata

Release time：2025-07-10 14:15 reading：226 Continue reading>>

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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.

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ROHM

Release time：2025-07-08 17:04 reading：260 Continue reading>>

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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

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Renesas

Release time：2025-07-04 15:04 reading：303 Continue reading>>

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Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.　　Designed for Edge/Endpoint AI　　The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.　　Advanced Technology　　The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.　　“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”　　“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”　　“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”　　Robust, Optimized Peripheral Set for AI　　Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.　　The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.　　New RUHMI Framework　　Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.　　Advanced Security Features　　The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.　　Ready to Use Solutions　　Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.　　Key Features of the RA8P1 MCUs　　Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)　　Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core　　Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface　　Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers　　Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management　　Packages: 224BGA, 289BGA

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Renesas

Release time：2025-07-04 14:56 reading：290 Continue reading>>

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Redefining Smart Living: Fibocom FG390 with MediaTek T930 Brings AI to the Heart of Homes and SMBs

　　As AI technology rapidly advances and smart devices proliferate, households and small to medium-sized businesses (SMBs) are seeking intelligent, secure, and efficient “digital housekeepers”. These AI-powered ecosystems must enable seamless device coordination, centralized data management, and real-time decision-making across scenarios like smart security, remote work, and digital infrastructure management.　　To address the growing demand, Fibocom, in collaboration with MediaTek, introduces the FG390, a next-generation 5G module powered by the MediaTek T930 platform. Combining superior cellular connectivity, integrated AI capabilities, and deep insight into smart home and enterprise networking, FG390is set to become a key enabler in building AI-driven home ecosystems and intelligent control hubs. The module helps bridge data silos and optimize operational efficiency amid ongoing digital transformation.　　Exceptional Cellular Performance for Enhanced 5GExperience　　FG390 is powered by MediaTek’s advanced T930 platform, built on a 4nm process and integrating the MediaTek M90 5G modem with a quad-core ArmCortex-A55 CPU. Delivering exceptional cellular performance, it supports6-carrier downlink aggregation (6CC CA) and 5-layer 3Tx uplink over Sub-6GHz 5GNR, reaching peak speeds of 10 Gbps downlink and 2.8 Gbps uplink for ultra-fast, low-latency connectivity. Ideal for bandwidth-intensive applications such as multi-stream 8K video or immersive AR/VR experiences, FG390 also features 8Rx reception with 200MHz bandwidth to enhance spectral efficiency and ensure stable coverage, even at cell edges.　　Next-Gen Smart Home Hub with Advanced Personalization　　As 5G and AI technologies converge, the CPE (Customer Premises Equipment) is emerging as the central hub of the smart home. Powered by FG390, this hub gains advanced sensing capabilities, broad compatibility with smart devices—including support for the Matter protocol—and deeply integrated AI algorithms. Together, these features enable real-time adaptation to environmental changes and user behavior, delivering a more personalized, seamless, and comfortable smart living experience.　　AI Services Spark New Commercial Potential　　What truly differentiates the FG390 is its deep AI integration alongside exceptional connectivity. Equipped with a dedicated NPU, it functions as an intelligent in-home AI agent, delivering context-aware services to end users. Designed to support edge-cloud collaborative AI models, such as those from Open AI and DeepSeek, the FG390 empowers AI-enabled FWA (Fixed Wireless Access) solutions for both consumer and enterprise markets. Its intuitive AI SDK enables flexible service expansion for FWA users, while mobile operators can leverage it to unlock new AI-driven value-added services and monetization channels. Additionally, the module supports NAS integration for centralized data management and optimized AI resource allocation, enhancing productivity and setting the stage for next-generation smart applications.　　“We have a long history of working together with Fibocom to reach significant FWA milestones, and our collaboration on the next-generation T930 5G FWA platform will help to drive growth of the FWA ecosystem,” said Evan Su, General Manager of Wireless Communications at MediaTek. “With this partnership in mind, we are pushing forward by creating a higher focus on new products that are rich in features and innovative design, while delivering cutting-edge solutions and exceptional service to customers around the world.”　　“Designed to meet the evolving needs of the FWA market over the next 3–5 years, we’re pleased to collaborate with MediaTek to launch the FG390 5G FWA module,” Added Simon Tao, VP of MBB Product Management Dept, Head of MBB BU at Fibocom. “Powered by the full capabilities of the MediaTek T930 platform and 5G Release 18, FG390addresses the connectivity needs of large-scale smart home and SMB deployments with high gain, low latency, and multi-OS compatibility. Fibocom remains dedicated to advancing 5G eMBB modules with superior cellular and AI performance. Leveraging powerful NPUs, we’ll work closely with our partners to further enable AI-driven applications across smart homes, offices, and cities, fully embracing the AI era. Together with MediaTek, we’ll continue to innovate across products, technologies, and applications to shape a smarter future.”

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Fibocom

Release time：2025-06-30 15:02 reading：289 Continue reading>>

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GigaDevice Anchors Global Headquarters in Singapore to Power Synergy and Impact

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially opened its global headquarters in Singapore. This strategic move marks a major milestone in GigaDevice's international growth journey, underscoring its commitment to closer customer engagement, building a resilient and agile supply chain, and strengthening its ecosystem and brand presence across key global markets.　　Founded in 2005, GigaDevice has rapidly built a competitive product portfolio and innovative solutions. Its SPI NOR Flash commands the No. 2 global position with a 20.4% market share, and it ranks No. 7 worldwide in the 32-bit general-purpose MCU segment. Serving diverse sectors including industrial, automotive, consumer, and IoT, GigaDevice is recognized for delivering semiconductor solutions with reliability and innovation at its core.　　As global demand for smart, connected technologies accelerates—particularly in industrial automation, automotive electronics, and intelligent edge devices—GigaDevice is sharpening its focus on innovation, supply chain agility, and ecosystem collaboration. The company is positioning itself to meet the evolving needs of international customers and capture opportunities across fast-growing markets.　　"We chose Singapore not just for its strategic location, but for its clarity, consistency, and global ambition," said Jennifer Zhao, GigaDevice Global Business CEO. "This is more than a regional office—it's a collaborative innovation hub where expertise across disciplines and borders comes together to build smarter systems, accelerate execution, and power what's next."　　Singapore's robust infrastructure, pro-innovation environment, and exceptional talent pool have established it as a global premier technology and business hub. Its strong connectivity, transparent regulatory framework, and dedication to digital transformation provide the ideal foundation for companies like GigaDevice to scale globally while maintaining agility and future readiness.　　Functioning alongside GigaDevice's group headquarters in China, the Singapore global headquarters will serve as a central platform to drive global coordination, foster localized product innovation, and deepen collaboration with customers and supply chain partners. From this base, the company aims to expand its presence in international markets and build a more connected, agile, and responsive global ecosystem.

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GigaDevice

Release time：2025-06-30 14:57 reading：303 Continue reading>>

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ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　~Integration in traction inverters extends the cruising range and improves performance~　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.　　About the "bZ5"　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.　　About HAIMOSIC (SHANGHAI) Co., Ltd.　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/

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ROHM

Release time：2025-06-23 14:11 reading：319 Continue reading>>

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ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture

　　As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.　　ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.　　A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.　　Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.　　ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.　　Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.　　Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.　　The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.

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ROHM

Release time：2025-06-13 16:52 reading：342 Continue reading>>

Trade news

Renesas：Enhance HMI User Experience with Built-in Large Memory MPU

　　The HMI market continues to drive growth in better user experience and increased automation with the expansion of HMI applications. This results in a strong demand for improved functionality and performance in display-based applications, such as real-time plotting, smooth animation, and USB camera image capture, in affordable systems. Microprocessors (MPUs) with high-speed, large-capacity built-in memory that can be used like microcontrollers (MCUs) are gaining attention in the market. Renesas' RZ/A3M MPU with a built-in 128MB DDR3L SDRAM and a compatible package for a two-layer PCB design is the ideal solution for realizing smooth animation and high-quality HMI at a reasonable system cost.　　High-Performance HMI and Real-Time Graphics　　Integrating high-speed, large-capacity memory directly into the MPU package offers several advantages, including mitigating concerns about high-speed signal noise on the PCB and simplifying PCB design for the users. The large-capacity memory needed for high-performance HMIs is externally connected to the MPU in the conventional way. Additionally, PCBs equipped with DDR memory and high-speed signal interfaces require multi-layer PCB designs to account for signal noise, making it challenging to reduce PCB costs. Also, the common capacity of on-chip SRAM is typically between 1MB and 10MB, which is too small for high-performance HMIs that need to include a reasonable number of tasks in the near future. To overcome these issues, Renesas released an industry-leading RZ/A3M MPU with a large built-in 128MB DDR3L memory to support high-performance HMI and real-time graphics performance to enhance better and faster user experiences. Most importantly, the board does not require a high-speed signal interface and supports two-layer PCB design to reduce board noise and simplify system development for users.Figure 1. Strengths of Built-in DDR Memory　　Designing High-Performance PCBs at a Reasonable System Cost　　The number of PCB layers and the ease of design significantly impact the cost of system implementation and maintenance in user applications. As shown in Figure 2, using a wide pin pitch of 0.8mm allows for the layout of signal lines and placement of VIAs between the balls. Additionally, placing the balls handling the main signals in the outer rows of the 244-pin 17mm x 17mm LFBGA package and positioning the GND and power pins as inner balls allows for efficient routing of the necessary signal lines for the system (Figure 3). The RZ/A3M MPU is designed to build cost-effective systems with two-layer PCBs through its innovative packaging and pin assignments.Figure 2. Signal Wiring and Ball LayoutImageFigure 3. Optimized Ball Arrangement for a Two-Layer Board Layout　　User-Friendly Interface Enabling Smooth GUI Display　　The high-resolution graphic LCD controller integrated into the RZ/A3M supports both parallel RGB and 4-lane MIPI-DSI interfaces, accommodating displays up to 1280x800. Additionally, the 2D graphics engine, high-speed 16-bit 1.6Gbps DDR3L memory, and 1GHz Arm® Cortex®-A55 CPU enable high-performance GUI displays, including smooth animations and real-time plotting that increase the possibility of automation in HMI applications. Connecting a USB camera to the USB 2.0 interface enables smooth capture of camera images, making it easy to check inside of an apparatus, for example, the doneness of the food in the oven or the condition in the refrigerator.　　The EK-RZ/A3M is an evaluation kit for the RZ/A3M. It includes an LCD panel with a MIPI-DSI interface. With this kit, users can immediately start evaluation. Renesas also has several graphics ecosystem partners – LVGL, SquareLine Studio, Envox, Crank, RTOSX – who deliver GUI solutions utilizing the EK-RZ/A3M to further accelerate your development cycle.Figure 4. High-Definition HMI Example with the EK-RZ/A3M　　The RZ/A3M MPU, equipped with high-speed 128MB DDR3L memory and a 1GHz Arm Cortex-A55, excels in developing cost-effective HMI applications with real-time plot UIs, smooth animations, and USB camera capture. The integrated memory simplifies PCB design by removing the need for high-speed signal interface design. Visit www.renesas.com/rza3m to learn more about the technical details and how to start developing the next HMI applications for consumer electronics, smart home, building automation, healthcare, industrial applications, and office automation.

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Renesas

Release time：2025-06-06 15:27 reading：408 Continue reading>>

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TL431ACLPR	Texas Instruments
CDZVT2R20B	ROHM Semiconductor
MC33074DR2G	onsemi
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RB751G-40T2R	ROHM Semiconductor

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BP3621	ROHM Semiconductor
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IPZ40N04S5L4R8ATMA1	Infineon Technologies

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