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BIWIN Wins "Solid State Drive Enterprise Gold Award 2025"

　　Recently, BIWIN made a mark in the Flash Memory World 2025 hosted by DOIT, where it showcased its comprehensive enterprise-grade storage portfolio and was honored with the "Solid State Drive Enterprise Gold Award 2025." This recognition further underscores the company’s technical expertise and product excellence in the enterprise storage sector.　　Focus on Enterprise Applications　　Building a Product Ecosystem for Diverse Scenarios　　The rapid growth of AI-driven computing has fueled increasing demand for high-performance, high-density SSDs and large-capacity memory solutions. BIWIN-launched enterprise-grade storage solutions cater to a wide range of applications, covering from traditional servers and data centers to AI servers and from cloud computing platforms to edge computing nodes. These products deliver exceptional performance and stability while meeting stringent customer requirements for data security, system compatibility, and long-term operational reliability.　　SATA SSD: Designed for mainstream server platforms, SATA SSD offers high energy efficiency and low total cost of ownership (TCO) storage solutions.　　PCIe SSD: Available in both Gen4 and Gen5 versions, PCIe SSDs are featured with high performance and low latency, making them ideal for high-performance computing scenarios like AI training, databases, and distributed storage.　　CXL Memory Expansion Modules: Aligned with next-generation computing architectures, CXL modules support higher bandwidth and lower-latency memory access.　　RDIMM Memory Modules: Tailored for server platforms, RDIMM modules provide large-capacity, high-stability memory for various high-end computing scenarios.　　SP Series PCIe SSD　　A Flagship Enterprise Solution Balancing Efficiency and Security　　BIWIN’s SP Series enterprise-grade PCIe SSDs, available in PCIe 4.0 and PCIe 5.0 interfaces, address a wide range of performance requirements.　　Featured with a PCIe 5.0 ×4 interface and a 2.5" U.2 form factor, the SP5 Series demonstrates exceptional throughput and responsiveness, capable of delivering sequential read/write speeds of up to 13,600 MB/s and 10,500 MB/s, and 4K random read/write performance up to 3,200K IOPS and 910K IOPS respectively. In addition, its innovative architectural design enables industry-leading KIOPS-per-Watt performance, providing strong support for the development of green data centers.　　In AI training scenarios, key features such as large capacity, high speed and low latency offered by SP series SSDs contribute to significantly enhancing data training and computational efficiency for large-scale models; while in big data analytic systems, its capability to achieve high-concurrency access plays a large part in elevating critical business data processing efficiency, reducing response times and accelerating decision-making processes.　　The SP Series also integrates advanced functionalities, including AES256 encryption, Sanitize advanced formatting, End-to-End Data Path Protection, Internal RAID, Secure Boot, and TCG Opal 2.0. These help to secure data security and integrity during transmission and storage, making it particularly suitable for applications with stringent data sensitivity requirements.　　Technologies Empowers Market Expansion　　Collaborating with Partners to Create Ecosystem Value　　On the market side, the company’s enterprise-grade products have passed China Mobile’s AVAP test, as well as interoperability tests with over 20 CPU platforms and OEM manufacturers. Strategic partnerships have been established with multiple domestic platform vendors, and the company has also successfully passed audits by several leading internet companies. In terms of technical capabilities, the company boasts an experienced R&D team and holds a broad portfolio of core technology patents in Thermal Management, Wear Leveling, ECC, and Intelligent Storage Management Algorithms, which collectively strengthen the company’s leading role in cutting-edge storage technology.　　Looking ahead, BIWIN will continue to strengthen its Integrated Solutions and Manufacturing (ISM) strategy while pursuing its “52X” mid-to-long-term strategy to enhance product competitiveness and ecosystem influence. With further collaborations with server OEMs, the company aims to advance joint development of high-performance storage solutions for AI and edge computing and deliver customized solutions tailored to customer needs. In parallel, efforts will be concentrated across key verticals, including telecom operators, top domestic internet platforms, and technical co-development initiatives. Through cross-sector collaboration in areas such as technical collaboration, industry applications, and co-development with customers, BIWIN aims to build an open, collaborative, and mutually beneficial ecosystem for enterprise-grade storage segment.

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BIWIN

Release time：2025-08-04 11:22 reading：457 Continue reading>>

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BIWIN Spec TDP200 Series Industrial-Grade PCIe SSD Hits the Market

　　With profound insights into the strict requirements for stability, reliability, and uninterrupted operations under industrial-based scenarios, BIWIN Spec introduces newly-available TDP200 series industrial-grade M.2 PCIe SSD designed for industrial data transfer demands. Featured with industrial-grade hardware and software design and optimized firmware algorithms, this innovation supports 24/7 high-frequency writes and is especially resistant to strong mechanical impacts and shocks, serving as efficient and reliable storage solutions for data communications, smart healthcare, industrial automation, industrial robots and AIoT.　　Tough and Reliable Industrial-Grade Design　　Engineered with selected industrial hardware and optimized circuit design, the TDP200 series supports stable operations under temperature ranging from -20℃ to +70℃, helping keep data safe and secure. More specialized designs such as high-quality 3D TLC NAND, high performance controller and capacity up to 2TB make the SSD qualified to handle massive, data-intensive workloads.　　Specialized Firmware for Long-Lasting Reliability　　Packed with advanced reliability features like 4K LDPC, SRAM ECC, RAID, and power loss protection, the TDP200 series boasts an impressive 3000 P/E cycles endurance, making it ideal for relentless 24/7 operations without downtime. A high-precision thermal sensor paired with S.M.A.R.T. health monitoring tracks temperature in real time, automatically adjusting performance to ensure consistent reliability under heavy workloads.　　Rigorous Testing for Uncompromising Quality　　The TDP200 series has been verified with robust quality through over 1000 tests of aging, extreme temperatures and reliability. While strictly in line with the international standards, the product is also continuously monitored in all aspects of performance, reliability and quality through ORT, ensuring top-tier excellence throughout its lifecycle. Moreover, the Series is tested seamlessly compatible with global mainstream platforms and operating systems.　　From product design and hardware architecture to component selection, firmware algorithms, and manufacturing, every detail of BIWIN’s industrial-grade SSD is crafted to deliver a stable, reliable, and durable foundation for industrial data.

Key word：

BIWIN

Release time：2025-07-29 15:40 reading：536 Continue reading>>

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BIWIN Industrial-Grade TDC200 Series Storage Cards: Built for Multi-Channel 4K Surveillance

　　Designed for high-definition, multi-channel video surveillance, the BIWIN Spec TDC200 Series Industrial-Grade SD Cards & microSD Cards come equipped with various self-developed firmware algorithms featuring high-reliable design and multichannel write optimizations to achieve stable write speeds across multiple video channels. And with design upgrades in physical structure and reliability, these cards are able to support operating temperature within -25°C to 85°C, as well as more protective capabilities like water-, dust-, shock-, wear-, X-ray-resistance and anti-magnetism. They are ideal for intensive scenarios such as vehicle surveillance, security systems, industrial inspection, and medical monitoring applications.　　Reliable Multi-Channel 4K Recording，10 Channels of Continuous Recording Without Frame Drops　　The BIWIN TDC200 series SD Card & microSD Card are equipped with smart data flow technologies which help to distinguish video stream data from system data and allocate them into separate storage zones. This optimized data structure through partitioned storage assists to reduce data fragmentation and write amplification caused by garbage collection (GC) during full-drive write scenarios, so as to extend products’ lifespan. Additionally, the built-in intelligent cache management system minimizes wear from high-frequency access, ensuring stability and reliability during high-load, continuous writing scenarios. The cards support 10 channels of 4K high-definition recording equipment with 7×24-hour stable continuous writing, ensuring no frame drops or stuttering in surveillance and high-definition recording scenarios, with no frame skipping or data loss during playback.　　Adaptive Power Saving for Extended Endurance，Ideal for Demanding Industrial Tasks　　Featured with smart low-power management technology, the TDC200 Series SD Card & microSD Card automatically switches to low power mode under standby state, reducing power consumption from milliamps (mA) to microamps (μA)—a drop of up to 85% in sleep mode. With microsecond-level wake-up response, the cards are especially suited for battery-powered or energy-sensitive applications, such as body-worn cameras, portable surveillance units, and inspection devices, significantly extending device uptime in the field.　　Comprehensive Protection from the Inside Out，Engineered for Harsh Industrial Environments　　In automotive and industrial settings, storage devices must withstand shocks, drops, vibrations, and extreme temperatures. The BIWIN TDC200 Series cards feature a reinforced physical design that ensures stable performance in environments ranging from -25℃ to 85℃. They are built to resist impact, vibration, water, dust, X-rays, and magnetic interference that can lead to circuit shorts or signal loss. Tested under rigorous reliability protocols, the TDC200 achieves a Mean Time Between Failures (MTBF) of up to 3 million hours, greatly reducing the risk of downtime and lowering maintenance costs in mission-critical deployments.　　Built with 3D TLC direct write and multiple software optimization technologies, BIWIN TDC200 Series SD Card & micro SD Card include capabilities of VDT (Voltage Detection Technology), S.M.A.R.T. health monitoring, Power Loss Protection, Intelligent Thermal Throttling and advanced ECC algorithms. VDT and S.M.A.R.T. provide predictive failure analysis and real-time health feedback, while intelligent thermal throttling and data retention safeguard data integrity under high-temperature conditions. These features work together to ensure long-term stability and durability even in the most demanding industrial environments.　　Conclusion　　In application scenarios requiring high-volume, multi-channel video recording, the BIWIN TDC200 Series Industrial-Grade SD & microSD Cards deliver exceptional stability and performance. With zero frame loss and uninterrupted data streams, every critical moment is captured in full. Thanks to superior shock and vibration resistance, these cards are the ideal choice for use in dashcams, in-vehicle DVRs, body-worn cameras, panoramic cameras, smart medical devices, industrial tablets, and industrial UAVs where data integrity is paramount.

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BIWIN

Release time：2025-07-29 15:33 reading：498 Continue reading>>

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Renesas Announces Establishment of New Subsidiary and Changes as Specified Subsidiary

　　Renesas Electronics Corporation (TSE: 6723, "Renesas"), a premier supplier of advanced semiconductor solutions, announced the establishment of a new subsidiary (the “New Subsidiary”) in the United States as a holding company for its Software & Digitalization business. The New Subsidiary is expected to be classified as a specified subsidiary of Renesas.　　1. Purpose of Establishing the New Subsidiary　　In January 2024, Renesas established a new organization dedicated to software and digitalization, accelerating efforts in these fields. As part of this initiative, Renesas acquired Altium Limited ("Altium", Note) in August 2024 and is working together with Altium as one team to establish an integrated and open “electronics system design and lifecycle management platform” to make electronics design accessible to a broader market to allow more innovation. In January 2025, Altium’s acquisition of Part Analytics, Inc., a supply chain management company, marked another step toward realizing Renesas’ Digitalization Vision.　　To further strengthen and grow its Software & Digitalization business, Renesas plans to establish a holding company as its wholly owned subsidiary in the first quarter ending March 31,2026, to oversee the management of its subsidiaries related to this business. Following the necessary procedures, Renesas intends to consolidate the shares of its Software & Digitalization-related subsidiaries, including Altium, under the New Subsidiary. The New Subsidiary's net assets are expected to exceed 30 percent of Renesas' total equity, and, as a result, it will be treated as a specified subsidiary of Renesas. By centrally managing its Software & Digitalization-related subsidiaries under the New Subsidiary, Renesas aims to enhance governance and operational efficiency, while building a structure that can flexibly respond to future business development and internal resource allocation.　　2. Overview of the Specified Subsidiary　　3. Future Outlook　　There is no material impact on Renesas' consolidated financial results for the fiscal year ending December 31, 2025. Renesas will make an announcement in a timely manner should any matters requiring disclosure arise in the future.　　(Note) Altium Limited has changed its corporate name to Altium Pty Ltd, effective December 12, 2024.

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Renesas

Release time：2025-07-28 14:40 reading：426 Continue reading>>

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SIMCom Strengthens Japan Market Presence with SIM7672JP Certifications

　　SIMCom, a global leader in IoT communication solutions, announces that its SIM7672JP—powered by the Qualcomm® 216 LTE IoT modem—has successfully obtained key certifications for the Japanese market, including JATE, TELEC, and NTT Docomo Technical Approval (TA). Certification with KDDI is currently ongoing.　　These approvals mark a significant step in SIMCom's strategic expansion into Japan, one of the world’s most advanced and regulated IoT markets.　　Designed to meet Japan's stringent regulatory and operator requirements, the SIM7672JP offers reliable and cost-effective LTE Cat.1 bis connectivity tailored for a wide range of IoT applications. It has already been validated by IIJ (Internet Initiative Japan) and is compatible with the NTT Docomo network, ensuring strong local integration.　　With support for Power Saving Mode (PSM), the SIM7672JP enables long-term, low-power deployments—making it an ideal solution for diverse sectors such as automotive and transport (fleet management, UBI, DVR, public safety), energy and industrial (smart grids, industrial equipment, rugged tablets, infrastructure, pipeline monitoring), consumer and enterprise (payment systems, POS, networking, retail, surveillance), and residential and healthcare (home automation, security, wearables, remote medical devices).　　The SIM7672JP is now in mass production and available for Japanese market. With the latest Japanese certifications, SIMCom is well-positioned to deepen its collaboration with local partners and accelerate the deployment of reliable cellular IoT solutions throughout Japan. SIMCom remains committed to empowering the Japanese IoT ecosystem—with certified, future-proof LTE Cat.1 bis modules that deliver connectivity, efficiency, and compliance.

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SIMCom

Release time：2025-07-21 14:44 reading：392 Continue reading>>

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Fibocom-Powered Robotic Mower Solution Featured at SPOGA+GAFA 2025, Pioneering the Future of Boundary-Free Smart Lawn Care

　　Cologne, Germany – June 24, Fibocom, a global leader incommunication modules and AI solutions, had its state-of-the-art intelligentrobotic lawn mower solution prominently showcased at SPOGA+GAFA 2025, theworld’s leading trade fair for the garden and outdoor living industry. Multiplerobotic lawn mowers powered by Fibocom’s technology demonstrated seamlessnavigation across simulated garden environments—autonomously detectingboundaries, planning precise mowing routes, and avoiding obstacles—all withoutrelying on traditional physical perimeter wires. This impressive demonstrationhighlighted the disruptive potential of AI-driven, boundary-free lawn caresolutions.　　The global smartrobotic mower market holds vast potential, with Europe and North Americaaccounting for 72% of the world’s 250 million private gardens. Yet, adoptionremains low—under 6% in North America and 10–30% in Europe—highlightingsubstantial room for growth as demand for intelligent lawn care accelerates.　　Fibocom’ssolution integrates advanced AI vision, multi-sensor fusion, and intelligentnavigation to eliminate the need for traditional boundary wires. This enablesrobotic mowers to autonomously detect perimeters and obstacles, ensuring safe,efficient, and precise operation while significantly improving mowing productivity.It’s worth mentioning that, having accumulated over 350,000 kilometers ofreliable autonomous performance worldwide, this solution has proven itsrobustness in diverse and complex garden environments.　　Fibocom provides two solution variantstailored to diverse customer needs: a standard pure-vision model and a flagshipversion combining binocular VIO (Visual-Inertial Odometry) with RTK (Real-TimeKinematic) for superior stability, precision, and large-area coverage—ideal forprofessional and commercial applications. This comprehensive suite, encompassingstereo cameras, AI processing boards, motor control units, and customizablemobile applications, enables OEM partners to accelerate product developmentcycles and focus resources on product differentiation and go-to-marketstrategies. For end users, it revolutionizes lawn care with smart mapping,autonomous operation, and auto-recharging for a safer, easier experience.　　Strategic partnerships with top global brandsare fast-tracking the launch of Fibocom-powered products in key internationalmarkets over the next six months, underscoring Fibocom’s technologicalleadership and growing influence in the smart lawn care industry. Leveragingcutting-edge innovation and manufacturing excellence, Fibocom empowers partnersto penetrate top-tier European retail channels and scale globally, where everyimpeccably maintained lawn showcases the strength of Chinese smartmanufacturing on the world stage.

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Fibocom

Release time：2025-07-11 11:28 reading：386 Continue reading>>

Murata Unveils First High-Frequency XB<span style='color:red'>AR</span> Filter for Next-Gen Networks

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Murata Unveils First High-Frequency XBAR Filter for Next-Gen Networks

　　Murata Manufacturing Co., Ltd. has announced the mass production and commercial shipment of the world’s first*1 high-frequency filter using XBAR technology*2. Developed by combining Murata’s proprietary Surface Acoustic Wave (SAW) filter expertise with XBAR technology from Murata's subsidiary Resonant Inc., it enables the extraction of desired signals while achieving both low insertion loss and high attenuation. These features are critical for the latest wireless technologies, including 5G, Wi-Fi 6E, Wi-Fi 7, and emerging 6G technologies.　　The demand for reliable high-frequency communications continues to grow in response to the widespread deployment of 5G and the future development of 6G. Simultaneously, wireless local-area network (WLAN) standards such as Wi-Fi 6E and Wi-Fi 7 are expanding into higher frequency domains to accommodate ultra-fast data rates. Filters used in these applications must address key challenges, such as preventing out-of-band interference, maximizing system battery performance, and meeting strict space limitations. Traditional approaches using Low Temperature Co-Fired Ceramic (LTCC) or conventional Bulk Acoustic Wave (BAW) filters often fall short in these performance areas.　　Murata’s new XBAR-based filter addresses these limitations by achieving high attenuation performance while maintaining a wide bandwidth and low signal loss. The XBAR structure itself excites bulk acoustic waves using comb-shaped electrodes and a piezoelectric single-crystal thin film, enabling performance beyond the reach of conventional filter structures. It effectively removes high-frequency interference, even in bands above 3 GHz, allowing for clearer signal detection and better performance, contributing to high-speed, high-capacity, and high-quality wireless communication.　　Key performance parameters include a passband of 5150–7125 MHz, a typical insertion loss of 2.2 dB, and a typical return loss of 17 dB. Typical attenuation figures are 11 dB at 4800–5000 MHz, 28 dB at 3300–4800 MHz, 27 dB at 7737–8237 MHz, and 26 dB at 10300–14250 MHz.　　The new filter is targeted at devices with embedded wireless functionality, including smartphones, wearables, notebook PCs, and communication gateways, offering an optimal balance of performance and cost efficiency. Murata will continue to drive innovation in filter technologies to support the evolution of wireless communications, and expects this architecture to scale further, with future product generations capable of operating effectively in ultra-high frequency bands above 10GHz.　　Notes　　*1According to Murata research as of July 7, 2025.　　*2XBAR technology: Murata’s proprietary filter structure that excites bulk acoustic waves using comb-shaped electrodes and piezoelectric single-crystal thin films.

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Murata

Release time：2025-07-10 14:15 reading：396 Continue reading>>

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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.

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ROHM

Release time：2025-07-08 17:04 reading：405 Continue reading>>

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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

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Renesas

Release time：2025-07-04 15:04 reading：549 Continue reading>>

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Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.　　Designed for Edge/Endpoint AI　　The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.　　Advanced Technology　　The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.　　“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”　　“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”　　“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”　　Robust, Optimized Peripheral Set for AI　　Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.　　The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.　　New RUHMI Framework　　Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.　　Advanced Security Features　　The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.　　Ready to Use Solutions　　Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.　　Key Features of the RA8P1 MCUs　　Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)　　Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core　　Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface　　Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers　　Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management　　Packages: 224BGA, 289BGA

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Release time：2025-07-04 14:56 reading：563 Continue reading>>

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