ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：406 Continue reading>>
Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
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Release time：2025-07-04 15:04 reading：549 Continue reading>>
ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time：2025-07-03 14:52 reading：377 Continue reading>>
ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity
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ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity

　　ROHM has expanded its portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types. They are optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors.　　The demand for advanced sensing technologies utilizing near-infrared (NIR) has grown in recent years, particularly in VR/AR equipment and biosensing devices. These technologies are used in applications such as eye tracking, iris recognition, and blood flow/oxygen saturation measurements that require high accuracy. At the same time, miniaturization, energy efficiency, and design flexibility are becoming increasingly important. In industrial equipment, near-infrared LEDs are playing a greater role with the rise of precise printer control and automation systems. In response, ROHM is expanding customer options by developing a lineup of compact packages and wavelengths that offer greater design flexibility, while contributing to higher precision and power savings by achieving high radiant intensity.　　The new lineup consists of six models in three package configurations, including two ultra-compact (1.0mm × 0.6mm), ultra-thin (t=0.2mm) products as part of the PICOLED™ series: SML-P14RW and SML-P14R3W. In addition, there are four variants in the industry-standard (1.6mm × 0.8mm) size, featuring a narrow beam circular lens package (CSL0902RT, CSL0902R3T) and flat lens design that emits light over a wide range (CSL1002RT, CSL1002R3T). Each package is available in two wavelengths, 850nm (860nm for the SML-P14RW) and 940nm, allowing customers various options for their specific application needs. The 850nm wavelength is ideal for phototransistors and camera sensors, making it suitable for high-sensitivity applications such as eye tracking and object detection in VR/AR. At the same time, the 940nm wavelength is less affected by sunlight and does not appear red when emitting light, making it suitable for motion sensors. It is also widely used in biosensing applications such as pulse oximeters to measure blood flow and oxygen saturation (SpO2).　　The light source incorporates an NIR element with an optimized emission layer structure utilizing proprietary technology developed through in-house manufacturing expertise. This has made it possible to achieve industry-leading* radiant intensity in a compact package, which was previously considered difficult. For example, compared to a standard 1006 size product, the SML-P14RW delivers approx. 1.4 times the radiant intensity at the same current. In other words, the SML-P14RW consumes 30% less power to achieve the same radiation intensity. This technology improves sensing accuracy and power savings for the entire system.　　Going forward, ROHM will continue to provide innovative light source solutions that support next-generation sensing technologies, creating new value in the VR/AR and industrial equipment markets, while contributing to the realization of a sustainable society.　　Compact NIR LED Lineup　　*1:Ta=25°C *2:IF=30mA *3:IF=20mA　　ROHM also offers NIR-sensitive phototransistors.　　Application Examples　　• VR/AR licenses (eye tracking, gesture recognition)　　• Pulse oximeters (blood flow/oxygen saturation measurement)　　• Industrial optical sensors (object passage detection, position detection), self-checkout systems (bill/card detection), mobile printers (paper detection)　　• Home appliance remote controls (IR data communication), robot vacuum cleaners (floor detection)　　Terminology　　VR/AR (Virtual Reality/Augmented Reality)　　Virtual reality immerses users in a completely digital environment through small high-resolution monitors or screens within an enclosed space. Augmented reality enhances the real world by overlaying digital content onto a headset or smart glasses, enabling users to interact with 3D images. Collectively, these technologies are sometimes referred to as XR (Cross Reality or Extended Reality).　　Near-Infrared (NIR)　　Refers to light in the wavelength range of 780nm to 1000nm. Primarily used in sensors, communication and measurement applications, it is suitable for high accuracy distance measurement and recognition.　　PICOLED™ Series　　ROHM's ultra-small, ultra-thin chip LEDs designed for compact mobile devices and wearables, developed using a proprietary element manufacturing process.　　Radiant Intensity　　An index representing the strength of energy emitted by a light-emitting device in a specific direction (unit: W/sr). This is an important factor that affects the LED’s output intensity and detection performance on the receiving side.　　Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies.　　*PICOLED™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time：2025-05-26 14:54 reading：486 Continue reading>>
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
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ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers

　　ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.　　The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.　　Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.　　To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.　　The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.　　All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.　　Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.　　Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.　　Product Lineup　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples　　・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies　　・AC-DC conversion circuits for 48V AI server power supplies　　・48V industrial equipment power supplies (i.e. fan motors)　　Terminology　　Low ON-Resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.　　SOA (Safe Operating Area) Tolerance　　The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.　　Power MOSFET　　A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.　　Hot-Swap Controller (HSC)　　A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
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Release time：2025-04-10 13:10 reading：570 Continue reading>>
NOVOSENSE Achieves ISO 26262 ASIL D
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NOVOSENSE Achieves ISO 26262 ASIL D "Defined-Practiced" Certification, Reinforcing Automotive Safety Leadership

　　NOVOSENSE Microelectronics today announced it has earned the ISO 26262 ASIL D "Defined-Practiced" certification from TÜV Rheinland, a significant milestone validating the company's robust functional safety management system.　　This achievement confirms NOVOSENSE's successful implementation of functional safety practices in critical automotive applications, including ABS wheel speed sensors and isolated gate drivers. Moving from the "Managed" (system establishment) to the "Defined-Practiced" (system implementation) level signifies a major leap in NOVOSENSE's functional safety capabilities and underscores the maturity of its research and development (R&D) and quality management systems.　　Transitioning from Compliance to Real-World Application　　Since securing the ISO 26262 ASIL D "Managed" certification in December 2021, NOVOSENSE has focused on refining its R&D processes and strengthening its functional safety management. TÜV Rheinland's comprehensive audit assessed various aspects, including functional safety lifecycle management, safety culture, and R&D proficiency. The review specifically examined the practical application of these systems in NOVOSENSE's NSM41xx series wheel speed sensors and the NSI6911 isolated gate driver, confirming the company's systems meet the stringent "Defined-Practiced" standard.　　Key Product Highlights:　　• NSM41xx Series ABS Wheel Speed Sensors: These AMR-based sensors, designed to ISO 26262 ASIL B (D) standards, support ASIL D system-level functional safety. They offer precise wheel speed monitoring for critical systems like ABS, ESP, and EPS, ensuring reliability in demanding conditions. These are currently in mass production.　　• NSI6911 Isolated Gate Driver: Designed for new energy vehicle (NEV) main drives, this ASIL D-compliant driver features a 12-bit high-precision ADC, advanced diagnostics, and an SPI programmable interface. It provides robust driving and protection for SiC MOSFETs and IGBTs, ensuring NEV safety. Samples are now available.　　Commitment to Automotive Excellence　　Automotive applications remain a core focus for NOVOSENSE, driving the company to uphold its "Robust & Reliable" values. Building strong functional safety capabilities is a strategic priority, supported by a comprehensive ISO 26262:2018-compliant development process and a rigorous automotive-grade quality management system.　　As of 2024, NOVOSENSE has shipped over 500 million automotive chips, with automotive business representing more than 35% of its total revenue. Its products are trusted by leading NEV OEMs and Tier-1 suppliers.　　NOVOSENSE aims to be a preferred chip supplier in the global automotive supply chain. Through its strong R&D, reliable quality assurance, proven mass production, and flexible customization, NOVOSENSE delivers high-quality, high-reliability, and high-performance analog and mixed-signal chips, along with comprehensive system-level solutions.
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Release time：2025-03-20 09:57 reading：859 Continue reading>>
Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers
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Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers

　　NOVOSENSE has officially launched the NSI67X0 series of smart isolated drivers with Isolated Analog Sensing function. Suitable for driving power devices such as SiC, IGBTs and MOSFETs, and available in both automotive (AEC-Q100 compliant) and industrial variants, this series can be widely used in new energy vehicles, air conditioners, power supplies, photovoltaics and other applications.　　This series of isolated gate drivers equates an isolated analog to PWM sensor, which can be used for temperature or voltage detection. The design further enhances driver versatility, simplifies system design, effectively reduces system size and lowers overall cost.　　High-voltage Drive and Ultra-high Common-mode Immunity　　Designed to drive IGBTs or SiC up to 2121V DC operating voltage, NSI67X0 offers advanced protection functions, excellent dynamic performance, and outstanding robustness. This series uses SiO2 capacitor isolation technology to isolate the input side from the output side, providing ultra-high common-mode immunity (CMTI>150kV/μs) while ensuring extremely small offset between devices, which is at the leading level in the industry.　　Powerful Output Capability and Miniaturized Package　　The NSI67X0 series has powerful output capability, supporting ±10A drive current and a maximum output drive voltage of 36V, far exceeding most similar products. Its SOW16 package design further enhances safety by achieving a creepage distance of more than 8mm while maintaining miniaturization.　　Comprehensive Protection Functions and Automotive Certification　　With comprehensive protection functions, including fast overcurrent protection, short-circuit protection, fault soft turn off, 4.5A Miller clamp, and undervoltage protection, this series is a reliable choice for driving power devices such as IGBTs. The entire product family meets the AEC-Q100 standard for automotive applications and can be widely used in new energy vehicles, industrial control and energy management.　　Features of NSI67X0 Series　　◆ Smart isolation drivers up to 2121Vpk for driving SiC and IGBTs　　◆ High CMTI: 150 kV/μs　　◆ Input side supply voltage: 3V ~ 5.5V　　◆ Driver side supply voltage: up to 32V　　◆ Rail-to-rail output　　◆ Peak source and sink current: ±10A　　◆ Typical propagation delay: 90ns　　◆ Operating ambient temperature: -40°C ~ +125°C　　◆ Compliant with AEC-Q100 for automotive applications　　◆ RoHS compliant package type: SOW16, creepage distance > 8mm　　Protection Functions　　◆ Fast over-current and short-circuit protection, with optional DESAT threshold voltage of 9V and 6.5V and OC threshold voltage of 0.7V　　◆ Integrated soft turn off function in case of fault, with optional soft turn off current of 400mA and 900mA　　◆ Integrated Miller clamp function, with clamp current up to 4.5A　　◆ Independent undervoltage protection UVLO on both HV and LV sides　　◆ Fault alarm (FLT/RDY pin indication)　　Isolated Analog Sampling Function　　◆ Isolated analog sampling function　　◆ AIN input voltage range: 0.2V ~ 4.7V　　◆ APWM output duty cycle: 96% ~ 6%　　◆ Duty cycle accuracy: 1.6%　　◆ APWM output frequency: 10kHz　　◆ Optional AIN integrated constant current source output　　Safety Related Certification　　◆ UL Certification: 1 minute 5700Vrms　　◆ VDE Certification: DIN VDE V 0884-11:2017-01　　◆ CSA Certification: Approved under CSA Component Acceptance Notice 5A　　◆ CQC Certification: Compliant with GB4943.1-2011　　Introduction to Principle of High-precision Temperature Sampling of NSI67X0 Series　　The AIN interface of the NSI6730 has a built-in 200uA current source. When an external NTC is connected, a voltage drop will be generated and demodulated into a 10kHz PWM signal for isolated output. The PWM signal is captured by the processor MCU, and the corresponding voltage value and temperature are obtained by calculating the duty cycle.　　When the AIN voltage is in the range of 0.2V ~ 4.7V, the AIN input voltage and APWM output duty cycle are linearly related. When the AIN voltage is converted to a PWM signal, the PWM duty cycle conforms to the following formula:　　That is, the AIN voltage of 0.2V ~ 4.7V corresponds to a PWM duty cycle of 96% ~ 6%.　　Model Selection Chart of NSI67X0 Series　　This series offers a variety of models to meet the needs of different applications. Specifically, in the NSI67X0 series, when X is 3, the AIN interface integrates a constant current source; when X is 7, the AIN interface does not integrate a constant current source.
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Release time：2025-02-24 16:18 reading：963 Continue reading>>
Top 10 IC Design Houses’ Combined Revenue Grows 12% in 2023, NVIDIA Takes Lead for the First Time, Says TrendForce
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Top 10 IC Design Houses’ Combined Revenue Grows 12% in 2023, NVIDIA Takes Lead for the First Time, Says TrendForce

　　In 2023, the combined revenue of the world’s top ten IC design houses reached approximately $167.6 billion, marking a 12% annual increase. This growth was primarily driven by NVIDIA, which saw a remarkable 105% increase in revenue, significantly boosting the overall industry. While Broadcom, Will Semiconductor, and MPS experienced only marginal revenue growth, other companies faced declines due to economic downturns and inventory reductions, says TrendForce.　　Looking ahead to 2024, TrendForce predicts that with IC inventory levels returning to healthy standards and driven by the AI boom, major CSPs will continue to expand the construction of LLMs. Additionally, AI applications are expected to penetrate personal devices, potentially leading to the introduction of AI-powered smartphones and AI PCs. Consequently, the global IC design industry's revenue growth is expected to continue its upward trajectory.　　NVIDIA, Broadcom, and AMD benefit from a surge in demand for AI　　The top five IC design houses boosted their 2023 revenues to $55.268 billion—a 105% year-over-year increase—primarily driven by NVIDIA’s AI GPU H100. Currently, NVIDIA captures over 80% of the AI accelerator chip market, and its revenue growth is expected to continue in 2024 with the release of the H200 and next-generation B100/B200/GB200. Broadcom’s revenue reached $28.445 billion in 2023 (semiconductor segment only), growing by 7%, with AI chip income accounting for nearly 15% of its semiconductor solutions. Despite stable wireless communications revenue, Broadcom expects a near-double-digit decline in broadband and server storage connectivity this year.　　AMD’s revenue fell by 4% to $22.68 billion in 2023, due to declining PC demand and inventory reductions, affecting most of its business segments. Only its data center and embedded businesses, boosted by the acquisition of Xilinx, grew by 17%. AMD’s AI GPU MI300 series, launched in the fourth quarter of 2023, is expected to be a major revenue driver in 2024.　　Conversely, Qualcomm and MediaTek were impacted by the downturn in the smartphone market. Qualcomm’s 2023 revenue decreased by 16% YoY to $30.913 billion (QCT only) due to weak demand in the handheld device and IoT sectors, with China’s smartphone shipments hitting a decade low. However, Qualcomm is actively promoting the automotive market, expecting automotive revenues to more than double by 2030.　　MediaTek’s revenue also fell in 2023, dropping 25% YoY to $13.888 billion, with declines in smartphone, power management IC, and smart edge businesses. Nevertheless, due to the adoption of its Dimensity 9300 by several Chinese clients and expected growth in high-end smartphone shipments, the company predicts a return to double-digit growth for all of 2024.　　Two significant changes in the ranking from sixth to tenth took place: First, Cirrus Logic fell off the list from its last place spot and was replaced by MPS, whose 2023 revenue rose 4% YoY to $1.821 billion thanks to automotive, enterprise data, and storage computing businesses—offsetting declines in communication and industrial sectors.　　Secondly, Realtek’s revenue fell by 19% annually to $3.053 billion in 2023, dropping the company down to eighth place. The decline was mainly due to a sharp decrease in PC shipments, a suspension of telecom tenders in China, and early inventory write-offs. However, after clearing inventory, Realtek saw a slight improvement in PC and automotive shipments in the first quarter of 2024 over networking and consumer electronics. With the launch of WiFi-7 in the third quarter, the restart of telecom tenders, and participation in the development of edge computing frameworks through the Arm alliance, Realtek’s revenues are poised for growth.
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Release time：2024-05-13 14:48 reading：1001 Continue reading>>
Renesas’ New FemtoClock™ 3 Timing Solution Delivers Industry’s Lowest Power and Leading Jitter Performance of 25fs-rms
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Renesas’ New FemtoClock™ 3 Timing Solution Delivers Industry’s Lowest Power and Leading Jitter Performance of 25fs-rms

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today expanded its timing solutions portfolio with a new ultra-low 25fs-rms clock solution for wireline infrastructure, data center and industrial applications. The new FemtoClock™ 3 family includes ultra-low jitter clock generators and jitter attenuators with 8 and 12 outputs, enabling high-performance, easy-to-use, and cost-effective clock tree designs for next-generation, high-speed interconnect systems. Target applications for the new devices include telecom switches and routers, top-of-rack data center switches, medical imaging, broadcast audio & video and more.　　FemtoClock 3 devices provide industry leading phase noise and jitter required to meet the needs of 112Gbps SerDes rates, as well as next generation 224Gbps SerDes designs using commonly available 48MHz to 73MHz crystals. The highly integrated devices can generate up to four frequency domains and offer integrated LDOs (Low Drop Out regulators) with superior PSRR, reducing board complexity and cost.　　“Renesas leads the industry with best-in-class timing solutions built from decades of experience and patented technology,” said Zaher Baidas, Vice President of the Timing Division for Renesas. “FemtoClock 3 devices extend that leadership by providing multiple clock and synchronization functions in a single device with ultra-low jitter, simplifying printed circuit board design and reducing solution area and cost.”　　“FemtoClock 3 was the only timing solution that offered us the ultra-low jitter performance while maintaining low power dissipation and simplifying the PCB design and lowering solution area on our next-generation switches,” said Vincent Ho, CEO at UfiSpace. “We count on Renesas to deliver the timing solutions that enable us to deliver leading-edge products quickly and cost-effectively.”　　Key Features of the FemtoClock 3 Family　　Industry-leading 25fs-rms jitter exceeds next-generation 112Gbps and 224Gbps SerDes reference clock requirements　　Up to 4 frequency domains allow all system clocks to be generated from a single device　　Device variants with jitter attenuation, synchronization and clock generation capabilities and with 8 or 12 outputs　　Low power dissipation of 1.2W and operating a single 1.8V supply　　Integrated non-volatile memory allows for device customization in factory at no additional cost to customer　　Small 7 x 7mm 48-pin VFQFPN and 9 x 9mm 64-pin VFQFPN packages　　Compliant with ITU-T G.8262 and G.8262.1 for enhanced synchronous Ethernet　　Single chip with multiple operating modes simplifies overall clock tree　　FemtoClock 3 supports multiple operating modes, including synchronization, jitter attenuation, and clock generation. Customers can combine the new FemtoClock 3 solution with the broader ClockMatrix™, VersaClock, buffer and oscillator portfolio of timing solutions to address challenging timing needs for their high-performance wireline infrastructure and data center designs.　　FemtoClock 3 functions seamlessly in conjunction with the state-of-the-art Renesas IC Toolbox (RICBox) application, empowering users to configure and program devices on the evaluation board. Additionally, RICBox interfaces with the Renesas Lab on the Cloud platform, providing users with the capability to connect virtually to an actual laboratory setting.　　Winning Combinations　　Renesas has combined FemtoClock 3 with numerous compatible devices from its portfolio to offer Winning Combinations, including the 1600G Fixed Form Factor Switch. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.
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Release time：2024-04-19 11:28 reading：1624 Continue reading>>
ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics
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ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics

　　ROHM has developed 45V rated 500mA output primary LDO regulators: BD9xxM5-C (BD933M5EFJ-C / BD950M5EFJ-C / BD900M5EFJ-C / BD933M5WEFJ-C / BD950M5WEFJ-C / BD900M5WEFJ-C). These devices are suitable for supplying power to automotive electronic components such as ECUs that operate from vehicle batteries.　　In recent years, the number of onboard power supply system and functions continues to grow as electrification in the automotive industry progresses. This increases the demand for primary LDOs that can directly step down the battery voltage to MCUs and other components used in ECUs. However, the energy supplied by the vehicle’s lead-acid battery is often subject to sudden voltage fluctuations, which primary LDOs are required to provide with excellent line-transient response in these conditions.　　At the same time, ECUs and other downstream devices often experience load current variations during operation, that also demand excellent load-transient response characteristics. A high frequency response is essential for fast output voltage recovery, but it has been difficult to provide sufficient phase margin at the same time to ensure stable operation. In response, ROHM developed a novel solution that addresses these challenges.　　The BD9xxM5-C incorporates original QuiCur™ high-speed load response technology that delivers excellent response characteristics to load current fluctuations. For example, the LDO can maintain output to within 100mV of set voltage even as the load changes between 0 and 500mA in 1μs (Rise time/Fall time). Furthermore, low 9.5µA (typ.) current consumption contributes to lower power consumption in automotive applications. These new products will be available in four packages, ranging from the compact HTSOP-J8 to the high heat dissipation TO252 (TO252-3/TO252-5) and HRP5 types. This allows users to select the most suitable package for each use case.　　Going forward, ROHM will continue to improve reliability while reducing power consumption in automotive applications by developing products utilizing its strengths in analog and other technologies.　　Product LineupThe new BD9xxM5-C meets the basic requirements for automotive products, including 150°C operation and qualification under the AEC-Q100 automotive reliability standard. A wide range of packages will be available to select from depending on the application environment, all featuring excellent response performance and low current consumption using proprietary QuiCur™ technology.　　The lineup will be expanded to comprise a total of 18 models, (including the TO252-3, TO252-5, and HRP5 packages) by FY2024.　　Application ExamplesSuitable for a wide range of automotive applications such as ECUs that operate on vehicle primary power supply systems.　　• Powertrain: Fuel Injection (FI), Tire Pressure Monitoring System (TPMS)　　• Body systems: Body Control Modules　　• Infotainment: Instrument Clusters, Head-Up Displays (HUDs)　　QuiCur™ High-Speed Load Response TechnologyQuiCur™ is the name of ROHM’s proprietary ‘Quick Current’ high-speed load response circuit capable of maximizing load response characteristics (response performance) without causing instability in the feedback circuits of power supply ICs.　　Stable operation of the power supply IC is also possible with minimal output capacitance. And in the case of switching regulators, which are a type of power supply IC, it is possible to linearly adjust the capacitance and output voltage fluctuation to easily achieve stable operation even when the capacitance is changed due to specification changes, significantly reducing the number of person-hours required for power circuit design - both in terms of decreasing component count and ensuring stable operation.　　Click on the URL below for more information on QuiCur™ Technology.　　https://www.rohm.com/news-detail?news-title=rohm-establishes-quicur-that-maximizes-the-response-performance-of-power-supply-ics&defaultGroupId=false　　• QuiCur™ is a trademark or registered trademark of ROHM Co., Ltd.　　Support ToolsROHM Real Models are high accuracy SPICE models that utilize original model-based technology to faithfully reproduce the electrical and temperature characteristics of the actual IC, resulting in a perfect match between the IC and simulation values. This ensures reliable verification, contributing to more efficient application development - for example by preventing rework after prototyping.　　ROHM Real Models are now available on ROHM’s website (see link below).　　https://www.rohm.com/products/power-management/linear-regulators/single-output-ldo-regulators?page=1&PS_ProductSeries=BD9xxM5%20series&PS_SpiceLink=1.0#parametricSearch　　Online Sales InformationSales Launch Date: February 2024　　Pricing: $1.5/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser and Farnell　　The products will be sold at other online distributors as well.　　Applicable Part Nos: BD950M5EFJ-C, BD933M5WEFJ-C, BD950M5WEFJ-C, BD900M5WEFJ-C　　TerminologyPrimary　　In a power supply circuit, the side in charge of 1st stage conversion from a power source such as a battery is called the primary and the side responsible for 2nd stage conversion referred to as the secondary.　　LDO Regulator (Low Drop Out/Low Saturation Regulator)　　A type of power supply IC that converts between two different DC voltage levels. Falls under the category of linear regulator (where the input/output voltages operate linearly) characterized by a small input-output voltage difference. Compared to DC-DC converter ICs (switching regulators), LDOs feature a simpler circuit configuration and lower noise.　　Load Current　　From the point of view of the power supply ICs, all electronic circuits in the subsequent stages, including MCUs and sensors, can be considered “loads”. When these loads operate, a (load) current flows, causing the output voltage of the power supply IC to undershoot (drop) or overshoot. Load transient response characteristics refer to the response time until the changed voltage due to load current is restored and the power supply stabilizes.
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Release time：2024-03-27 11:07 reading：651 Continue reading>>

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