NOVOSENSE Achieves ISO 26262 ASIL D
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NOVOSENSE Achieves ISO 26262 ASIL D "Defined-Practiced" Certification, Reinforcing Automotive Safety Leadership

　　NOVOSENSE Microelectronics today announced it has earned the ISO 26262 ASIL D "Defined-Practiced" certification from TÜV Rheinland, a significant milestone validating the company's robust functional safety management system.　　This achievement confirms NOVOSENSE's successful implementation of functional safety practices in critical automotive applications, including ABS wheel speed sensors and isolated gate drivers. Moving from the "Managed" (system establishment) to the "Defined-Practiced" (system implementation) level signifies a major leap in NOVOSENSE's functional safety capabilities and underscores the maturity of its research and development (R&D) and quality management systems.　　Transitioning from Compliance to Real-World Application　　Since securing the ISO 26262 ASIL D "Managed" certification in December 2021, NOVOSENSE has focused on refining its R&D processes and strengthening its functional safety management. TÜV Rheinland's comprehensive audit assessed various aspects, including functional safety lifecycle management, safety culture, and R&D proficiency. The review specifically examined the practical application of these systems in NOVOSENSE's NSM41xx series wheel speed sensors and the NSI6911 isolated gate driver, confirming the company's systems meet the stringent "Defined-Practiced" standard.　　Key Product Highlights:　　• NSM41xx Series ABS Wheel Speed Sensors: These AMR-based sensors, designed to ISO 26262 ASIL B (D) standards, support ASIL D system-level functional safety. They offer precise wheel speed monitoring for critical systems like ABS, ESP, and EPS, ensuring reliability in demanding conditions. These are currently in mass production.　　• NSI6911 Isolated Gate Driver: Designed for new energy vehicle (NEV) main drives, this ASIL D-compliant driver features a 12-bit high-precision ADC, advanced diagnostics, and an SPI programmable interface. It provides robust driving and protection for SiC MOSFETs and IGBTs, ensuring NEV safety. Samples are now available.　　Commitment to Automotive Excellence　　Automotive applications remain a core focus for NOVOSENSE, driving the company to uphold its "Robust & Reliable" values. Building strong functional safety capabilities is a strategic priority, supported by a comprehensive ISO 26262:2018-compliant development process and a rigorous automotive-grade quality management system.　　As of 2024, NOVOSENSE has shipped over 500 million automotive chips, with automotive business representing more than 35% of its total revenue. Its products are trusted by leading NEV OEMs and Tier-1 suppliers.　　NOVOSENSE aims to be a preferred chip supplier in the global automotive supply chain. Through its strong R&D, reliable quality assurance, proven mass production, and flexible customization, NOVOSENSE delivers high-quality, high-reliability, and high-performance analog and mixed-signal chips, along with comprehensive system-level solutions.
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Release time：2025-03-20 09:57 reading：310 Continue reading>>
Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers
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Leading Performance for High Voltage Applications: NOVOSENSE Launches the NSI67X0 Series of Smart Isolated Drivers

　　NOVOSENSE has officially launched the NSI67X0 series of smart isolated drivers with Isolated Analog Sensing function. Suitable for driving power devices such as SiC, IGBTs and MOSFETs, and available in both automotive (AEC-Q100 compliant) and industrial variants, this series can be widely used in new energy vehicles, air conditioners, power supplies, photovoltaics and other applications.　　This series of isolated gate drivers equates an isolated analog to PWM sensor, which can be used for temperature or voltage detection. The design further enhances driver versatility, simplifies system design, effectively reduces system size and lowers overall cost.　　High-voltage Drive and Ultra-high Common-mode Immunity　　Designed to drive IGBTs or SiC up to 2121V DC operating voltage, NSI67X0 offers advanced protection functions, excellent dynamic performance, and outstanding robustness. This series uses SiO2 capacitor isolation technology to isolate the input side from the output side, providing ultra-high common-mode immunity (CMTI>150kV/μs) while ensuring extremely small offset between devices, which is at the leading level in the industry.　　Powerful Output Capability and Miniaturized Package　　The NSI67X0 series has powerful output capability, supporting ±10A drive current and a maximum output drive voltage of 36V, far exceeding most similar products. Its SOW16 package design further enhances safety by achieving a creepage distance of more than 8mm while maintaining miniaturization.　　Comprehensive Protection Functions and Automotive Certification　　With comprehensive protection functions, including fast overcurrent protection, short-circuit protection, fault soft turn off, 4.5A Miller clamp, and undervoltage protection, this series is a reliable choice for driving power devices such as IGBTs. The entire product family meets the AEC-Q100 standard for automotive applications and can be widely used in new energy vehicles, industrial control and energy management.　　Features of NSI67X0 Series　　◆ Smart isolation drivers up to 2121Vpk for driving SiC and IGBTs　　◆ High CMTI: 150 kV/μs　　◆ Input side supply voltage: 3V ~ 5.5V　　◆ Driver side supply voltage: up to 32V　　◆ Rail-to-rail output　　◆ Peak source and sink current: ±10A　　◆ Typical propagation delay: 90ns　　◆ Operating ambient temperature: -40°C ~ +125°C　　◆ Compliant with AEC-Q100 for automotive applications　　◆ RoHS compliant package type: SOW16, creepage distance > 8mm　　Protection Functions　　◆ Fast over-current and short-circuit protection, with optional DESAT threshold voltage of 9V and 6.5V and OC threshold voltage of 0.7V　　◆ Integrated soft turn off function in case of fault, with optional soft turn off current of 400mA and 900mA　　◆ Integrated Miller clamp function, with clamp current up to 4.5A　　◆ Independent undervoltage protection UVLO on both HV and LV sides　　◆ Fault alarm (FLT/RDY pin indication)　　Isolated Analog Sampling Function　　◆ Isolated analog sampling function　　◆ AIN input voltage range: 0.2V ~ 4.7V　　◆ APWM output duty cycle: 96% ~ 6%　　◆ Duty cycle accuracy: 1.6%　　◆ APWM output frequency: 10kHz　　◆ Optional AIN integrated constant current source output　　Safety Related Certification　　◆ UL Certification: 1 minute 5700Vrms　　◆ VDE Certification: DIN VDE V 0884-11:2017-01　　◆ CSA Certification: Approved under CSA Component Acceptance Notice 5A　　◆ CQC Certification: Compliant with GB4943.1-2011　　Introduction to Principle of High-precision Temperature Sampling of NSI67X0 Series　　The AIN interface of the NSI6730 has a built-in 200uA current source. When an external NTC is connected, a voltage drop will be generated and demodulated into a 10kHz PWM signal for isolated output. The PWM signal is captured by the processor MCU, and the corresponding voltage value and temperature are obtained by calculating the duty cycle.　　When the AIN voltage is in the range of 0.2V ~ 4.7V, the AIN input voltage and APWM output duty cycle are linearly related. When the AIN voltage is converted to a PWM signal, the PWM duty cycle conforms to the following formula:　　That is, the AIN voltage of 0.2V ~ 4.7V corresponds to a PWM duty cycle of 96% ~ 6%.　　Model Selection Chart of NSI67X0 Series　　This series offers a variety of models to meet the needs of different applications. Specifically, in the NSI67X0 series, when X is 3, the AIN interface integrates a constant current source; when X is 7, the AIN interface does not integrate a constant current source.
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Release time：2025-02-24 16:18 reading：541 Continue reading>>
Top 10 IC Design Houses’ Combined Revenue Grows 12% in 2023, NVIDIA Takes Lead for the First Time, Says TrendForce
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Top 10 IC Design Houses’ Combined Revenue Grows 12% in 2023, NVIDIA Takes Lead for the First Time, Says TrendForce

　　In 2023, the combined revenue of the world’s top ten IC design houses reached approximately $167.6 billion, marking a 12% annual increase. This growth was primarily driven by NVIDIA, which saw a remarkable 105% increase in revenue, significantly boosting the overall industry. While Broadcom, Will Semiconductor, and MPS experienced only marginal revenue growth, other companies faced declines due to economic downturns and inventory reductions, says TrendForce.　　Looking ahead to 2024, TrendForce predicts that with IC inventory levels returning to healthy standards and driven by the AI boom, major CSPs will continue to expand the construction of LLMs. Additionally, AI applications are expected to penetrate personal devices, potentially leading to the introduction of AI-powered smartphones and AI PCs. Consequently, the global IC design industry's revenue growth is expected to continue its upward trajectory.　　NVIDIA, Broadcom, and AMD benefit from a surge in demand for AI　　The top five IC design houses boosted their 2023 revenues to $55.268 billion—a 105% year-over-year increase—primarily driven by NVIDIA’s AI GPU H100. Currently, NVIDIA captures over 80% of the AI accelerator chip market, and its revenue growth is expected to continue in 2024 with the release of the H200 and next-generation B100/B200/GB200. Broadcom’s revenue reached $28.445 billion in 2023 (semiconductor segment only), growing by 7%, with AI chip income accounting for nearly 15% of its semiconductor solutions. Despite stable wireless communications revenue, Broadcom expects a near-double-digit decline in broadband and server storage connectivity this year.　　AMD’s revenue fell by 4% to $22.68 billion in 2023, due to declining PC demand and inventory reductions, affecting most of its business segments. Only its data center and embedded businesses, boosted by the acquisition of Xilinx, grew by 17%. AMD’s AI GPU MI300 series, launched in the fourth quarter of 2023, is expected to be a major revenue driver in 2024.　　Conversely, Qualcomm and MediaTek were impacted by the downturn in the smartphone market. Qualcomm’s 2023 revenue decreased by 16% YoY to $30.913 billion (QCT only) due to weak demand in the handheld device and IoT sectors, with China’s smartphone shipments hitting a decade low. However, Qualcomm is actively promoting the automotive market, expecting automotive revenues to more than double by 2030.　　MediaTek’s revenue also fell in 2023, dropping 25% YoY to $13.888 billion, with declines in smartphone, power management IC, and smart edge businesses. Nevertheless, due to the adoption of its Dimensity 9300 by several Chinese clients and expected growth in high-end smartphone shipments, the company predicts a return to double-digit growth for all of 2024.　　Two significant changes in the ranking from sixth to tenth took place: First, Cirrus Logic fell off the list from its last place spot and was replaced by MPS, whose 2023 revenue rose 4% YoY to $1.821 billion thanks to automotive, enterprise data, and storage computing businesses—offsetting declines in communication and industrial sectors.　　Secondly, Realtek’s revenue fell by 19% annually to $3.053 billion in 2023, dropping the company down to eighth place. The decline was mainly due to a sharp decrease in PC shipments, a suspension of telecom tenders in China, and early inventory write-offs. However, after clearing inventory, Realtek saw a slight improvement in PC and automotive shipments in the first quarter of 2024 over networking and consumer electronics. With the launch of WiFi-7 in the third quarter, the restart of telecom tenders, and participation in the development of edge computing frameworks through the Arm alliance, Realtek’s revenues are poised for growth.
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Release time：2024-05-13 14:48 reading：840 Continue reading>>
Renesas’ New FemtoClock™ 3 Timing Solution Delivers Industry’s Lowest Power and Leading Jitter Performance of 25fs-rms
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Renesas’ New FemtoClock™ 3 Timing Solution Delivers Industry’s Lowest Power and Leading Jitter Performance of 25fs-rms

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today expanded its timing solutions portfolio with a new ultra-low 25fs-rms clock solution for wireline infrastructure, data center and industrial applications. The new FemtoClock™ 3 family includes ultra-low jitter clock generators and jitter attenuators with 8 and 12 outputs, enabling high-performance, easy-to-use, and cost-effective clock tree designs for next-generation, high-speed interconnect systems. Target applications for the new devices include telecom switches and routers, top-of-rack data center switches, medical imaging, broadcast audio & video and more.　　FemtoClock 3 devices provide industry leading phase noise and jitter required to meet the needs of 112Gbps SerDes rates, as well as next generation 224Gbps SerDes designs using commonly available 48MHz to 73MHz crystals. The highly integrated devices can generate up to four frequency domains and offer integrated LDOs (Low Drop Out regulators) with superior PSRR, reducing board complexity and cost.　　“Renesas leads the industry with best-in-class timing solutions built from decades of experience and patented technology,” said Zaher Baidas, Vice President of the Timing Division for Renesas. “FemtoClock 3 devices extend that leadership by providing multiple clock and synchronization functions in a single device with ultra-low jitter, simplifying printed circuit board design and reducing solution area and cost.”　　“FemtoClock 3 was the only timing solution that offered us the ultra-low jitter performance while maintaining low power dissipation and simplifying the PCB design and lowering solution area on our next-generation switches,” said Vincent Ho, CEO at UfiSpace. “We count on Renesas to deliver the timing solutions that enable us to deliver leading-edge products quickly and cost-effectively.”　　Key Features of the FemtoClock 3 Family　　Industry-leading 25fs-rms jitter exceeds next-generation 112Gbps and 224Gbps SerDes reference clock requirements　　Up to 4 frequency domains allow all system clocks to be generated from a single device　　Device variants with jitter attenuation, synchronization and clock generation capabilities and with 8 or 12 outputs　　Low power dissipation of 1.2W and operating a single 1.8V supply　　Integrated non-volatile memory allows for device customization in factory at no additional cost to customer　　Small 7 x 7mm 48-pin VFQFPN and 9 x 9mm 64-pin VFQFPN packages　　Compliant with ITU-T G.8262 and G.8262.1 for enhanced synchronous Ethernet　　Single chip with multiple operating modes simplifies overall clock tree　　FemtoClock 3 supports multiple operating modes, including synchronization, jitter attenuation, and clock generation. Customers can combine the new FemtoClock 3 solution with the broader ClockMatrix™, VersaClock, buffer and oscillator portfolio of timing solutions to address challenging timing needs for their high-performance wireline infrastructure and data center designs.　　FemtoClock 3 functions seamlessly in conjunction with the state-of-the-art Renesas IC Toolbox (RICBox) application, empowering users to configure and program devices on the evaluation board. Additionally, RICBox interfaces with the Renesas Lab on the Cloud platform, providing users with the capability to connect virtually to an actual laboratory setting.　　Winning Combinations　　Renesas has combined FemtoClock 3 with numerous compatible devices from its portfolio to offer Winning Combinations, including the 1600G Fixed Form Factor Switch. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.
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Release time：2024-04-19 11:28 reading：1453 Continue reading>>
ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics
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ROHM Develops Automotive Primary LDOs: Leveraging Original QuiCur™ Technology to Achieve Industry-Leading* Load Response Characteristics

　　ROHM has developed 45V rated 500mA output primary LDO regulators: BD9xxM5-C (BD933M5EFJ-C / BD950M5EFJ-C / BD900M5EFJ-C / BD933M5WEFJ-C / BD950M5WEFJ-C / BD900M5WEFJ-C). These devices are suitable for supplying power to automotive electronic components such as ECUs that operate from vehicle batteries.　　In recent years, the number of onboard power supply system and functions continues to grow as electrification in the automotive industry progresses. This increases the demand for primary LDOs that can directly step down the battery voltage to MCUs and other components used in ECUs. However, the energy supplied by the vehicle’s lead-acid battery is often subject to sudden voltage fluctuations, which primary LDOs are required to provide with excellent line-transient response in these conditions.　　At the same time, ECUs and other downstream devices often experience load current variations during operation, that also demand excellent load-transient response characteristics. A high frequency response is essential for fast output voltage recovery, but it has been difficult to provide sufficient phase margin at the same time to ensure stable operation. In response, ROHM developed a novel solution that addresses these challenges.　　The BD9xxM5-C incorporates original QuiCur™ high-speed load response technology that delivers excellent response characteristics to load current fluctuations. For example, the LDO can maintain output to within 100mV of set voltage even as the load changes between 0 and 500mA in 1μs (Rise time/Fall time). Furthermore, low 9.5µA (typ.) current consumption contributes to lower power consumption in automotive applications. These new products will be available in four packages, ranging from the compact HTSOP-J8 to the high heat dissipation TO252 (TO252-3/TO252-5) and HRP5 types. This allows users to select the most suitable package for each use case.　　Going forward, ROHM will continue to improve reliability while reducing power consumption in automotive applications by developing products utilizing its strengths in analog and other technologies.　　Product LineupThe new BD9xxM5-C meets the basic requirements for automotive products, including 150°C operation and qualification under the AEC-Q100 automotive reliability standard. A wide range of packages will be available to select from depending on the application environment, all featuring excellent response performance and low current consumption using proprietary QuiCur™ technology.　　The lineup will be expanded to comprise a total of 18 models, (including the TO252-3, TO252-5, and HRP5 packages) by FY2024.　　Application ExamplesSuitable for a wide range of automotive applications such as ECUs that operate on vehicle primary power supply systems.　　• Powertrain: Fuel Injection (FI), Tire Pressure Monitoring System (TPMS)　　• Body systems: Body Control Modules　　• Infotainment: Instrument Clusters, Head-Up Displays (HUDs)　　QuiCur™ High-Speed Load Response TechnologyQuiCur™ is the name of ROHM’s proprietary ‘Quick Current’ high-speed load response circuit capable of maximizing load response characteristics (response performance) without causing instability in the feedback circuits of power supply ICs.　　Stable operation of the power supply IC is also possible with minimal output capacitance. And in the case of switching regulators, which are a type of power supply IC, it is possible to linearly adjust the capacitance and output voltage fluctuation to easily achieve stable operation even when the capacitance is changed due to specification changes, significantly reducing the number of person-hours required for power circuit design - both in terms of decreasing component count and ensuring stable operation.　　Click on the URL below for more information on QuiCur™ Technology.　　https://www.rohm.com/news-detail?news-title=rohm-establishes-quicur-that-maximizes-the-response-performance-of-power-supply-ics&defaultGroupId=false　　• QuiCur™ is a trademark or registered trademark of ROHM Co., Ltd.　　Support ToolsROHM Real Models are high accuracy SPICE models that utilize original model-based technology to faithfully reproduce the electrical and temperature characteristics of the actual IC, resulting in a perfect match between the IC and simulation values. This ensures reliable verification, contributing to more efficient application development - for example by preventing rework after prototyping.　　ROHM Real Models are now available on ROHM’s website (see link below).　　https://www.rohm.com/products/power-management/linear-regulators/single-output-ldo-regulators?page=1&PS_ProductSeries=BD9xxM5%20series&PS_SpiceLink=1.0#parametricSearch　　Online Sales InformationSales Launch Date: February 2024　　Pricing: $1.5/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser and Farnell　　The products will be sold at other online distributors as well.　　Applicable Part Nos: BD950M5EFJ-C, BD933M5WEFJ-C, BD950M5WEFJ-C, BD900M5WEFJ-C　　TerminologyPrimary　　In a power supply circuit, the side in charge of 1st stage conversion from a power source such as a battery is called the primary and the side responsible for 2nd stage conversion referred to as the secondary.　　LDO Regulator (Low Drop Out/Low Saturation Regulator)　　A type of power supply IC that converts between two different DC voltage levels. Falls under the category of linear regulator (where the input/output voltages operate linearly) characterized by a small input-output voltage difference. Compared to DC-DC converter ICs (switching regulators), LDOs feature a simpler circuit configuration and lower noise.　　Load Current　　From the point of view of the power supply ICs, all electronic circuits in the subsequent stages, including MCUs and sensors, can be considered “loads”. When these loads operate, a (load) current flows, causing the output voltage of the power supply IC to undershoot (drop) or overshoot. Load transient response characteristics refer to the response time until the changed voltage due to load current is restored and the power supply stabilizes.
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Release time：2024-03-27 11:07 reading：464 Continue reading>>
ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
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ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

　　ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.　　Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies - resulting in higher power loss when used for switching.　　In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.　　Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.　　Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.　　SBD Trench MOS StructureThe trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.　　And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.　　Application Examples• Automotive LED headlamps • xEV DC-DC converters • Power supplies for industrial equipment　　• Lighting　　☆: Under development　　* The TO-277GE package products released and sold by online distributors this time are rated for car infotainment and body systems. For each part number, we are preparing grades that can be installed in powertrains, etc. (using the same part number), with mass production scheduled to start in September 2024. (The packaging symbol after the above part numbers will differ)　　Product Page and Related InformationApplication notes highlighting the advantages of these new products in circuits along with a white paper that showcases the features of each SBD series are available on ROHM's website. An SBD page is also available that allows users to narrow down product options by entering voltage conditions and other parameters, facilitating the selection process during design. Click on the URLs below for more information.　　■ ROHM SBD Product Page　　https://www.rohm.com/products/diodes/schottky-barrier-diodes　　■ Application Notes　　Advantages of YQ Series: Compact and Highly Power Conversion Efficiency Schottky Barrier Diodes for Automotive　https://fscdn.rohm.com/en/products/databook/applinote/discrete/diodes/yq_sbd_automotive_an-e.pdf　　■ White Paper　　ROHM's SBD Lineup Contributes to Greater Miniaturization and Lower Loss in Automotive, Industrial, and Consumer Equipment　　https://fscdn.rohm.com/en/products/databook/white_paper/discrete/diodes/sbd_lineup_wp-e.pdf　　Online Sales Information　　Applicable Part Nos: Refer to the above table.　　Availability: December 2023　　Pricing: $2,5/unit (samples, excluding tax)　　The products will be sold at other online distributors as well.　　Terminologytrr (Reverse Recovery Time)　　The time it takes for the switching diode to switch from the ON state to completely OFF. The lower this value is, the smaller the switching losses.　　Forward Voltage (VF)　　A voltage drop that occurs when electricity flows in the forward direction from + to -. The lower this value is, the higher the efficiency.　　Reverse Current (IR)　　Reverse current generated when reverse voltage is applied. The lower this value is, the smaller the power consumption (reverse power loss).　　Thermal Runaway　　When a diode is conducted in the reverse direction, heat generated within the chip may exceed the heat dissipation of the package, causing IR to increase and eventually lead to destruction, - a phenomenon called thermal runaway. For SBDs with high IR values, thermal runaway is especially likely to occur, so care must be taken when designing circuits.
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Release time：2024-02-20 11:26 reading：1905 Continue reading>>
Hiksemi Launches PCIe 4.0 SSD FUTURE Series, 7450MB/S Leads The Next Generation Of Gaming SSDs
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Hiksemi Launches PCIe 4.0 SSD FUTURE Series, 7450MB/S Leads The Next Generation Of Gaming SSDs

　　As a global provider of ultimate storage products and solutions,Hangzhou Hikstorage Technology Co.,Ltd.("Hiksemi") is committed to constantly exploring and inventing to meet the demand of consumers.　　Seeing that SSDs have emerged as the mainstream technology in digital data storage,Hiksemi has made full efforts in the field of PCIe 4.0 SSDs with the rich technical experience. Recently,Hiksemi has launched high-performance PCIe 4.0 SSD,FUTURE Series,designed for PC enthusiasts,gamers and content creators.　　Just as the name FUTURE,this series is born to break limits and embrace the future. With the ultimate performance and speed,it brings the ultimate experience to users. FUTURE SSD has faster speed,stronger performance,larger capacity,making users even more powerful in the world of game entertainment and content creation.　　Faster Speed　　The maximum sequential reading speed of up to 7450MB/S can significantly improve the speed and fluency of game startup,screen loading and file access.　　To demonstrate the capabilities of FUTURE SSD,Hiksemi benchmarked the 2TB model on CrystalDiskMark software. The test result is shown in the figure,the sequential read speed exceeds 7450MB/S. In addition,after loading it into PS5,the file transfer speed and game loading speed become significantly faster. It is enough to reflect excellent speed and performance.　　Stronger Performance　　It adopts customized main controller,advanced process technology and the DRAM-less design to bring high-performance bandwidth and throughput.　　In terms of heat dissipation,the new generation of graphene heat sink guarantees the better temperature control. In terms of durability,the MTBF(Mean Time Between Failures) can reach 2 million hours,and the 5-year long warranty service provides users with greater peace of mind.　　Larger Capacity　　The compact M.2 2280 single-sided PCB design,with a variety of capacity options,up to 4TB,can well meet the expansion needs of PS5,notebooks,desktops and other devices.　　With the continuous development of information technology and the increase of massive data,higher requirements are placed on the speed and capacity of storage devices. With the efforts of brands such as Hiksemi,consumers can purchase SSD products with better performance,faster speed,larger capacity,and better cost effectiveness. Hiksemi will continue to invest in R&D resources,improve the supply chain,and conduct technology and product iterations based on consumer demand,striving to become an emerging force leading the development of the storage industry.
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Release time：2023-12-13 14:12 reading：2826 Continue reading>>
Fibocom Smart Module SC126-NA Received Certification from a Leading Carrier in North America
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Fibocom Smart Module SC126-NA Received Certification from a Leading Carrier in North America

　　Fibocom (Stock code: 300638), a global leading provider of IoT (Internet of Things) wireless solutions and wireless communication modules, is proud to announce a pivotal achievement for its 4G smart module SC126-NA receiving the certification from one of the leading carriers in North America. Integrated with a quad-core processor and leveraged 11nm technology, SC126-NA is a high-performance smart module designed for the entry-level intelligent IoT market, now the module is fully capable of providing an integrated, seamless connectivity service to a wide range of AIoT terminals including smart wireless payment terminals, industrial handhelds, 4G PTT-over-cellular terminals by gaining the certification.　　The global artificial intelligence IoT market is projected to reach high demand with the expansion of AI technology. As an essential in fostering the AIoT market growth, smart module empowers IoT devices with mobile computing capabilities, allowing real-time data processing and analysis, greatly reducing the decision-making timeline in critical scenarios for industry customers and improving overall efficiency. The validation of Fibocom's SC126-NA smart module can shorten the certification cycle of customers' terminal devices and ease the investment concerns for customers' IoT projects.　　Notably, Fibocom SC126-NA is equipped with an open Android operating system with rich multimedia processing capabilities. It can be connected to an FHD (1920 x 1080 @30fps) touchscreen, supporting multi-channel camera input, plus H.265 / H.264 encoding and decoding capabilities and integrating with facial recognition algorithm. Packaged in LCC + LGA form factor, the module offers maximum flexibility for customers to develop terminal devices for various market demands. In addition, SC126-NA is capable of providing precise positioning and navigation with GNSS. Furthermore, with the scalability to support a rich set of interfaces including MIPI / USB / UART / SPI / I2C, etc, Fibocom SC126-NA is an ideal smart wireless solution for various applications that require the integration of cellular communication and multimedia features. With the expanding landscape of AIoT applications in the global market, Fibocom developed a series of regional versions of SC126 to support the frequency bands in Europe and APAC, as well as Wi-Fi only version to satisfy the booming market demands.
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Release time：2023-11-14 13:26 reading：2219 Continue reading>>
Fibocom 5G Module FM160-NA Certified by All Three of US' Leading Operators
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Fibocom 5G Module FM160-NA Certified by All Three of US' Leading Operators

　　Fibocom’s 5G module FM160-NA has achieved an industry-leading milestone by receiving all three major US carriers’ certifications. The module has been approved to deliver optimal 5G connectivity service on all three carriers’ networks with verified capabilities, bolstering the mobile broadband applications with the best-in-class 5G experience.　　Shenzhen, China – September 14th 2023 – Fibocom a global leading provider of IoT (Internet of Things) wireless solutions and wireless communication modules, announces the significant milestone of its 5G module FM160-NA on the completion of receiving all three major US carriers’ certifications. The industry-leading FM160-NA will help customers in the North America market to reduce the time-to-market, accelerating the 5G FWA commercialization.　　Supporting NR Carrier Aggregation (CA), FM160-NA optimizes 5G user experience with extended coverage, boosted throughput, and increased capacity. Powered by the Qualcomm Snapdragon® X62 modem chipset, FM160-NA is backward compatible with LTE-TDD and LTE-FDD network standards. It delivers maximum downlink rates of 3.5Gbps and uplink rates of 900Mbps under 5G, empowering IoT applications with lightning data transmission speeds. Packaged in M.2 form factor with the size of 30x52x2.3mm, the module is pin-compatible with Fibocom's Release 15 module FM150, which allows customers to advance the 5G terminals without investment concerns.　　According to the research conducted by Statista, the total amount of 5G Fixed Wireless Access (FWA) connections is predicted to reach 236 million connections worldwide by 2028. In 2022, the number of 5G FWA connections in the world reached 19.23 million. The upgrade demand for higher data throughput for both 4G FWA service providers and early-stage 5G FWA service providers keeps growing. Customer Premises Equipment (CPE), as the access point to provide seamless and reliable connectivity service for homes, enterprises, and industries, is the key enabler in boosting FWA adoption. Fibocom FM160-NA is the ideal wireless solution for FWA customers to narrow down the digital divide by enabling gigabit connectivity for end devices such as CPE, ODU, mobile hot spot, USB dongles, etc.　　FM160-NA provides high-performance positioning and navigation services for mobility scenarios with built-in multi-constellation GNSS. Moreover, it also supports abundant functionalities such as digital audio, VoLTE and VoNR, which is flexible to acquire via software upgrade. Meanwhile, it supports multiple operating systems (Linux/ Android/ Windows), various network protocols as well as industry-standard interfaces (USIM, USB 3.1, PCIe 4.0 and I2S), allowing much flexibility and ease of integration for FWA customer deployment.　　Gene Santana, VP of Overseas Carriers Certification Dept., Fibocom, commented, "We are thrilled to gain all three major carriers’ certifications with the robust quality of FM160-NA, which marks the remarkable achievements for FM160-NA in the North America market. Looking forward, Fibocom is confident to deliver the best-in-class 5G solution for diversified mobile broadband markets and work closely with operators to accelerate the 5G monetization."
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Release time：2023-09-22 11:54 reading：2784 Continue reading>>
ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time
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ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time

　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading　　Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time　　Contributes to lower power loss along with fewer man-hours and external parts required for noise suppression in devices equipped with small motors*ROHM July 13th, 2023 study　　Product LineupOnline Sales InformationVideoFeatured Products　　July 13th, 2023　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　PrestoMOS™     ‘Presto’ is an Italian musical term meaning ‘very fast’.　　PrestoMOS™ is ROHM’s original power MOSFET that maintains the high withstand voltage and low ON resistance of Super Junction MOSFETs while speeding up the trr of the built-in diode. Reducing switching losses make it ideal for a wider range of applications with inverter circuits, such as air conditioners and refrigerators.　　*PrestoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples◇ Refrigerators◇ Ventilation fans◇ Fan motorsAlso suitable for a variety of devices equipped with small motors.　　Online Sales InformationSales Launch Date: March 2023　　Online Distributors: DigiKey, Mouser, and Farnell　　Pricing: $3.5/unit (samples, excluding tax)　　Products and evaluation boards will be offered at online distributors as they become available.　　TerminologySuper Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A type of transistor, MOSFETs can be divided by device structure into DMOSFET (Double-diffused MOSFET), planar, and super junction topologies. Super Junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types, while also featuring lower loss when handling large power.　　trr (Reverse Recovery Time)　　The time it takes for the built-in diode to switch from the ON state to completely OFF. The lower this value is, the smaller the loss during switching.　　Lifetime Control　　The time it takes for carriers (holes or electrons) that have moved when voltage is applied to the semiconductor to recombine when the voltage is stopped is called the lifetime, and the technology that makes recombination easier by intentionally creating defects in the semiconductor crystal structure is called lifetime control.
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Release time：2023-09-15 13:48 reading：2126 Continue reading>>

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