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New Renesas USB-C Power Solution with Innovative Three-Level Topology Improves Performance and Reduces System Size

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller.　　The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications.　　The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses.　　Renesas is a worldwide leader in USB-PD solutions, offering a comprehensive range of products, including turnkey solutions for various applications. Renesas helps customers shorten their time-to-market with an extensive development environment and pre-certified USB-IF reference designs. Renesas USB-PD solutions offer superior quality and safety, along with high efficiency and power density.　　“This three-level buck topology solution is a prime example of Renesas’ worldwide leadership in battery charging,” said Gaurang Shah, Vice President of the Power Division at Renesas. “The innovative technology includes patent-pending breakthroughs that offer our customers clear advantages over competing USB-C power offerings.”　　The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.　　Key Features of the RAA489300/RAA489301 battery charger and voltage regulator　　Wide range of input and output voltages for use in voltage battery packs and with various PD adapters　　Integrated safety features with built-in protection mechanisms against overcharging, overheating, and voltage anomalies　　Scalability for easily adapting to various power levels and application requirements　　Optimized switching architecture divides the voltage across power switches, improving efficiency　　Minimizes power consumption, contributing to greener, more sustainable designs　　Lower thermal stress improves system reliability and extends product lifespan　　Winning Combinations　　Renesas offers the RTK-251-SinkCharger-240W and the 240W Dual-Port Daughter Card Winning Combinations that minimize the effort required for customers to design USB-C battery charging into their products. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. 　　Device Availability　　The RAA489300/RAA489301 is available today in a 4×4 mm 32-lead TQFN package. Comprehensive design support and tools, including the RTK-251-SinkCharger-240W Kit and the RTKA489300DE0000BU Evaluation Board, are also available.

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Renesas

Release time：2025-08-20 11:46 reading：366 Continue reading>>

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Adapting to challenging magnetic environments: MT73xx 3D dual-output Hall latches from NOVOSENSE enable precise automotive motor control

　　The NOVOSENSE MT73xx series dual-output Hall latches, based on 3D Hall technology, support SS (Speed & Speed) or SD (Speed & Direction) dual-channel outputs and complies with Automotive Grade 0 standards. Ideal for motor control systems such as power windows, liftgates, and sunroofs, this product family enhances the accuracy and stability of speed and position detection, optimizing overall in-vehicle comfort.　　In motor control systems, precise detection of speed and direction signals directly influences system response speed and operational stability. Traditional solutions typically rely on a combination of two separate Hall latches, requiring high magnetic ring installation precision. This often leads to issues such as signal phase deviation, poor synchronization, and structural complexity.　　Integrates a 3D Hall sensing structure with inherent orthogonal output characteristics, the MT73xx series can simultaneously deliver dual-channel speed signals (SS output) with a 90° phase difference or speed and direction signals (SD output), making it widely suitable for “speed-direction” detection applications. This design reduces dependency on precise positioning of magnetic poles, mitigates dual-channel phase deviation, simplifies system architecture, and improves overall system stability, providing a more flexible and reliable solution for motion control detection.　　Compatibility with diverse magnetic ring configurations enabled by VHS technology　　To achieve high-precision 3D sensing, the MT73xx series adopts NOVOSENSE’s proprietary VHS (Vertical Hall Sensor) technology. Through combinations of XY, YZ, and XZ axial sensing, any two axes naturally deliver orthogonal outputs, enhancing signal synchronization.　　Additionally, the MT73xx series offers excellent compatibility with various magnetic ring configurations – whether axial, radial, or irregularly shaped magnets – maintaining robust duty cycle performance. This allows customers to adapt designs flexibly depending on magnetic ring characteristics and installation environments, further reducing development complexity and tuning costs.　　Dual-output design for optimized system integration　　Regarding system integration, the MT73xx’s dual-output capability allows it to replace traditional single- or dual-Hall solutions by directly transmitting SS (Speed & Speed) or SD (Speed & Direction) signals to ECU, minimizing the requirements for peripheral redundant position sensors.　　This approach not only saves PCB space and simplifies structural layouts, but also enhances solution integration, offering greater design flexibility for innovative applications in motor control and intelligent cockpit systems.

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NOVOSENSE

Release time：2025-08-13 15:35 reading：366 Continue reading>>

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Murata Launches iSIM IoT Module with Built-In Global Connectivity from 1NCE

　　Murata today introduced a new iSIM-compatible LPWA module, the Type 1SC, pre-integrated with out-of-the-box connectivity from 1NCE, one of the world’s fastest-growing IoT companies. The collaboration delivers simplified, scalable global connectivity, making it easier to launch and manage low-power IoT devices. Optimized for low-power, low-data applications, the solution comes bundled with 50 MB of data and optional top-ups, enabling rapid, cost-effective deployment for applications such as asset tracking, fleet management, and healthcare monitoring. Supporting both LTE-M and NB-IoT, the module offers broad compatibility across networks in 173 countries.　　By embedding 1NCE’s cloud-based connectivity directly into the module, Murata eliminates the need for separate SIM provisioning, streamlining the design and manufacturing process for compact, energy-efficient devices. The result is a faster, more reliable path to market. Additionally, with over 30 million devices managed across 23,000+ customers, its platform simplifies lifetime IoT connectivity – bringing seamless integration, global reach, and built-in scalability to the next generation of connected products.　　“Murata’s Type 1SC module represents our commitment to driving innovation in the IoT space,” said Hiro Hyogo, Senior Manager, Corporate Technology and Innovation at Murata Americas. “By having connectivity pre-installed on our modules, we’re reducing the complexities and costs associated with global IoT deployments while ensuring strong security and performance.”　　"IoT will be dominated by software players, which is why Murata chose and trusted in 1NCE," said Fabian Kochem, Head of Global Product Strategy at 1NCE. “The supply chain of IoT is bloated, but our two companies save our customers time and money.”

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Murata

Release time：2025-08-13 15:33 reading：279 Continue reading>>

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High-voltage half-bridge driver NSD2622N from NOVOSENSE: A high-reliability, high-integration solution tailored for E-mode GaN

　　NOVOSENSE has launched NSD2622N, a high-voltage half-bridge driver IC specifically designed for enhancement-mode GaN (E-mode GaN). This chip integrates positive/negative voltage regulation circuits, supports bootstrap supply, and provides high dv/dt immunity and robust driving capability. It significantly simplifies GaN driver circuit design while enhancing system reliability and reducing overall costs.　　Application background　　In recent years, gallium nitride high-electron-mobility transistors (GaN HEMTs) are gaining increasingly widespread adoption in high-voltage, high-power applications, such as AI data center power supplies, microinverters, and on-board chargers (OBCs). With significant advantages of high switching frequency and low switching losses, GaN HEMTs enable substantially improved power density in power supply systems, noticeably optimized energy efficiency, and significantly reduced system costs.　　However, GaN devices still face challenges in real-world applications. For instance, E-mode GaN devices exhibit low turn-on thresholds. In high-voltage and high-power applications, particularly in hard-switching operation mode, poorly designed driver circuits can lead to false triggering due to crosstalk during high-frequency high-speed switching. Additionally, the complexity of compatible driver circuit designs raises the barrier to GaN device adoption.　　To accelerate widespread GaN adoption, leading GaN manufacturers at home and abroad have introduced some power ICs with integrated drivers, especially MOSFET-LIKE GaN power devices in Si-MOSFET-compatible packages, which somewhat reduce GaN driver circuit design complexity. However, driver-integrated GaN solutions have limitations: they struggle to meet customized design requirements and are unsuitable for applications adopting multi-device parallel or bidirectional switching topologies. Therefore, discrete GaN devices with dedicated drivers remain essential for many applications. To address the above-mentioned limitations, NOVOSENSE has developed NSD2622N – a driver IC tailored to E-mode GaN, aiming to deliver high-performance, high-reliability, and cost-competitive driving solutions for high-voltage and high-power GaN applications.　　Product features　　NSD2622N is a high-voltage half-bridge driver IC specifically designed for E-mode GaN. It integrates a voltage regulation circuit capable of generating a configurable stable positive voltage from 5V to 6.5V to ensure reliable GaN driving, as well as a charge pump circuit that produces a fixed -2.5V negative voltage for reliable GaN turn-off. By integrating both positive and negative voltage regulation circuits, the chip supports high-side output with bootstrap supply.　　NSD2622N leverages NOVOSENSE’s proven capacitive isolation technology. Its high-side driver withstands a voltage range of -700V to +700V and a minimum SW dv/dt immunity of 200V/ns. Meanwhile, low propagation delay and tight delay matching between high-side and low-side outputs make it a perfect match for the high-frequency, high-speed switching requirements of GaN devices. Additionally, NSD2622N delivers 2A (source) and -4A (sink) peak drive currents on both high-side and low-side outputs, meeting the requirements of high-speed GaN driving and multi-device parallel configurations. The IC also includes an integrated 5V LDO that can power circuits like digital isolators in applications requiring isolation.　　Key specifications of NSD2622N　　SW voltage range: -700V to 700V　　SW dv/dt immunity: > 200V/ns　　Wide supply voltage range: 5V-15V　　Adjustable positive output voltage range: 5V-6.5V　　Built-in negative output voltage: -2.5V　　Peak drive current: 2A (source) / 4A (sink)　　Minimum input pulse width (typical): 10ns　　Input-to-output propagation delay (typical): 38ns　　Pulse width distortion (typical): 5ns　　Rise time (1nF load, typical): 6.5ns　　Fall time (1nF load, typical): 6.5ns　　Built-in dead time (typical): 20ns　　Bootstrap supply for high-side output　　Integrated 5V LDO for digital isolator supply　　Undervoltage lockout (UVLO) and overtemperature protection　　Operating temperature range: -40°C to +125°CFunctional block diagram of NSD2622N　　Eliminating false triggering risks and providing more stable drive voltage　　Compared to conventional Si MOSFET driver solutions, the key challenge in E-mode GaN driver circuit design lies in providing appropriate, stable and reliable positive/negative bias voltages. This is because that E-mode GaN typically requires a 5V-6V turn-on voltage, while its threshold voltage is as low as 1V, or even lower at high temperatures, necessitating negative turn-off voltage to prevent false triggering. To address this challenge, two common drive solutions are used for E-mode GaN: resistive-capacitive (RC) voltage division drive and direct drive.　　1. RC voltage division drive　　This approach utilizes standard Si MOSFET driver ICs. As shown in the diagram, during turn-on, the parallel combination of Cc and Ra is connected with Rb in series, dividing the driver supply voltage (e.g., 10V) to provide a 6V gate drive voltage for the GaN device, with Dz1 clamping the positive voltage. During turn-off, Cc discharges to provide negative turn-off voltage for the GaN device, with Dz2 clamping the negative voltage.RC voltage division drive solution　　Although the RC voltage division circuit does not require sophisticated driver ICs, it introduces additional parasitic inductance due to a large number of components involved, which can impact GaN’s switching performance at high frequencies. Moreover, since the negative turn-off voltage relies on discharge from capacitor Cc, the negative turn-off voltage proves unreliable.　　As shown in the half-bridge demo board test waveforms, during the startup phase (T1 in the waveform), the absence of initial charge on Cc results in failure to establish negative voltage and thus zero-voltage turn-off; during the negative turn-off period following the driver’s signal transmission (T2), the negative voltage amplitude fluctuates with capacitor discharge; and during the prolonged turn-off period (T3), the capacitor cannot sustain negative voltage, eventually discharging to zero. Consequently, RC voltage division circuits are generally limited to medium/low power applications with relatively lower reliability requirements, and are proved unsuitable for high-power systems.Waveform of E-mode GaN using RC voltage division drive circuit(CH2: Drive supply voltage; CH3: GaN gate-source voltage)　　2. Direct drive　　The direct drive solution requires selecting a driver IC with an appropriate undervoltage-lockout (UVLO) threshold, for example, NSI6602VD, which is specifically designed for E-mode GaN with a 4V UVLO threshold. When paired with an external positive/negative voltage regulation circuit, it can directly drive E-mode GaN devices. Below is a typical application circuit.NSI6602VD driver circuitPositive and negative voltage regulation circuits　　This direct drive solution can provide reliable negative turn-off voltage for GaN under all operating conditions, when the auxiliary power supply is functioning normally. As a result, this approach is widely adopted in various high-voltage, high-power GaN applications.　　The next-generation GaN driver NSD2622N from NOVOSENSE, integrates the positive/negative voltage regulation circuits directly into the chip. As shown in the half-bridge demo board test waveforms below, NSD2622N maintains consistent negative turn-off voltage amplitude and duration regardless of operating conditions. Specifically, during startup (T1 in the waveform), the negative voltage is established even before the driver sends signals; during GaN turn-off (T2), the negative voltage remains stable in amplitude; during extended periods without driver signals (T3), the negative voltage continues to stay reliably stable.Waveforms of E-mode GaN using NSD2622N driver circuit(CH2: Low-side GaN Vds, CH3: Low-side GaN Vgs)　　Simplified circuit design and reduced system costs　　NSD2622N can provide stable and reliable direct drive for GaN devices. More importantly, by integrating positive/negative voltage regulators, it significantly reduces external component count. By adopting the bootstrap supply architecture, NSD2622N greatly simplifies driver power circuit design and lowers overall system costs.　　Taking a 3kW power supply unit (PSU) as an example, assuming both phases of the interleaved TTP PFC and full-bridge LLC use GaN devices, a complexity comparison between two direct-drive solutions is given below:　　When using the NSI6602VD driver solution, each half-bridge high-side driver requires an independent isolated power supply in conjunction with corresponding isolation and positive/negative voltage regulation circuits. This means complex auxiliary power supply design for isolation. Given the high power quality requirements of GaN driving and the fact that the main power paths of the PFC and LLC stages are typically placed on separate boards, a two-stage auxiliary power architecture is often necessary. In this configuration, the first stage typically employs a device with wide input voltage range like flyback converter, to generate regulated voltage rails. The second stage may use an open-loop full-bridge topology to provide isolated power and further regulate the power to generate the required positive and negative supply voltages for NSI6602VD. Below is a typical power architecture for such a driver solution.Typical power architecture for NSI6602VD driver solution　　The NSD2622N driver solution significantly simplifies auxiliary power design through its bootstrap supply capability. Below is a typical power architecture for this approach.Typical power architecture for NSD2622N driver solution　　A detailed comparison of bill-of-materials (BOM) for driver and power supply circuits between the above-mentioned two GaN direct-drive solutions is provided in the table below. It can be seen that the NSD2622N solution utilizing bootstrap supply, dramatically reduces total component count compared to the NSI6602VD’s isolated power supply approach, resulting in substantially lower system costs. Even in applications requiring isolated power supply, NSD2622N maintains its competitive edge - its integrated positive/negative voltage regulators enable a more simplified peripheral circuit relative to the NSI6602VD solution, leading to fewer components and lower system costs.BOM comparison between two GaN direct drive solutions　　Versatile GaN compatibility and flexible drive voltage adjustment　　The E-mode GaN driver IC NSD2622N from NOVOSENSE delivers not only superior performance but also broad compatibility across various GaN devices from different brands, of different types (including both voltage-mode and current-mode), and at different voltage ratings. For instance, the output voltage of NSD2622N can be set between 5V to 6.5V by adjusting feedback resistors. This enables selection of the most appropriate driving voltage for any GaN device by simply adjusting the feedback resistors to match specific GaN characteristics, allowing GaN devices from different brands to operate at their individual peak performance points.　　In addition, NSD2622N features a minimum dv/dt immunity of 200V/ns on the switching node (SW), enhancing the upper limit of GaN switching speed. The adoption of a more compact QFN package and the design of independent turn-on and turn-off output pins further reduce the driver loop parasitic inductance. The over-temperature protection ensures safer GaN applications.　　NOVOSENSE also offers single-channel GaN driver IC NSD2012N. Featuring 3mm*3mm QFN package and adjustable negative voltage capability, it can meet more personalized application requirements.

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NOVOSENSE

Release time：2025-08-07 14:08 reading：442 Continue reading>>

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PRI Certification, the #2 Certification Body in China, Launches IATF 16949 Services to Support Growing Automotive Industry

　　PRI Certification Expands by Adding IATF 16949 Certification Services in China and Enhances Position as One of the Top Two Chinese CBs with 18% Market Share　　PRI Certification proudly announces the official launch of IATF 16949 certification services in China. The expansion through PRI China’s Beijing office allows the organization to offer IATF 16949 services directly to the Chinese marketplace. In addition to this stronger presence in China, PRI Certification also holds the #2 market share in the United States. This dual-market leadership underscores PRI’s global credibility and trusted reputation across two of the world’s most significant manufacturing regions.　　This strategic move solidifies PRI Certification’s commitment to delivering high-quality, industry-specific certification solutions throughout Asia. While the Beijing office will serve as the local hub for client engagement and auditing, all technical and certification decisions will continue to be supported through PRI’s team in Warrendale, Pennsylvania, USA—ensuring global consistency, technical rigor, and impartial oversight.　　Over a Decade of Experience in Asia　　PRI Certification has been delivering IATF 16949 certification in Japan for over 10 years, earning a strong reputation for excellence and reliability in the region. Expanding into China is a natural progression that aligns with growing demand in the Asian automotive market.　　Expert Auditors with Deep Automotive Knowledge　　PRI’s auditors bring unmatched technical expertise and practical insight to each audit. This ensures clients receive not just compliance evaluations but also process improvements that contribute to lasting business value.　　Tailored Audits Across 30+ Industries　　PRI Certification has successfully delivered certification services across more than 30 industries worldwide. The organization’s approach to auditing is tailored to the specific needs of the automotive sector, making PRI a trusted partner for companies pursuing or maintaining IATF 16949 Certification.　　Continuing a Legacy of Quality in China　　PRI has been providing certification services in China since 2010, helping organizations achieve international quality benchmarks across a wide range of sectors. The introduction of IATF 16949 services marks a significant milestone, strengthening PRI’s ongoing commitment to the region’s automotive manufacturing excellence.

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PRI

Release time：2025-08-05 14:46 reading：453 Continue reading>>

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Renesas Introduces 64-bit RZ/G3E MPU for High-Performance HMI Systems Requiring AI Acceleration and Edge Computing

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced the launch of its new 64-bit RZ/G3E microprocessor (MPU), a general-purpose device optimized for high-performance Human Machine Interface (HMI) applications. Combining a quad-core Arm® Cortex®-A55 running at up to 1.8GHz with a Neural Processing Unit (NPU), the RZ/G3E brings high-performance edge computing with AI inference for faster, more efficient local processing. With Full HD graphics support and high-speed connectivity, the MPU targets HMI systems for industrial and consumer segments including factory equipment, medical monitors, retail terminals and building automation.　　High-Performance Edge Computing and HMI Capabilities　　At the heart of the RZ/G3E is a quad-core Arm Cortex-A55, a Cortex-M33 core, and the Ethos™-U55 NPU for AI tasks. This architecture efficiently runs AI applications such as image classification, object recognition, voice recognition and anomaly detection while minimizing CPU load. Designed for HMI applications, it delivers smooth Full HD (1920x1080) video at 60fps on two independent displays, with output interfaces including LVDS (dual-link), MIPI-DSI, and parallel RGB. A MIPI-CSI camera interface is also available for video input and sensing applications.　　“The RZ/G3E builds on the proven performance of the RZ/G series with the addition of an NPU to support AI processing,” said Daryl Khoo, Vice President of Embedded Processing at Renesas. “By using the same Ethos-U55 NPU as our recently announced RA8P1 microcontroller, we’re expanding our AI embedded processor portfolio and offering a scalable path forward for AI development. These advancements address the demands of next-generation HMI applications across vision, voice and real-time analytics with powerful AI capabilities.”　　The RZ/G3E is equipped with a range of high-speed communication interfaces essential for edge devices. These include PCI Express 3.0 (2 lanes) for up to 8Gbps, USB 3.2 Gen2 for fast 10Gbps data transfer, and dual-channel Gigabit Ethernet for seamless connectivity with cloud services, storage, and 5G modules.　　Low-Power Standby with Fast Linux Resume　　Starting with the third-generation RZ/G3S, the RZ/G series includes advanced power management features to significantly reduce standby power. The RZ/G3E maintains sub-CPU operation and peripheral functions while achieving low power consumption around 50mW and around 1mW in deep standby mode. It supports DDR self-refresh mode to retain memory data, enabling quick wake-up from deep standby for running Linux applications.　　Comprehensive Linux Software Support　　Renesas continues to offer the Verified Linux Package (VLP) based on the reliable Civil Infrastructure Platform, with over 10 years of maintenance support. For users requiring the latest versions, Renesas provides Linux BSP Plus, including support for the latest LTS Linux kernel and Yocto. Ubuntu by Canonical and Debian open-source OS are also available for server or desktop Linux environments.　　Key Features of RZ/G3E　　CPU: Quad-core Cortex-A55 (up to 1.8GHz), Cortex-M33　　NPU: Ethos-U55 (512 GOPS)　　HMI: Dual Full HD output, MIPI-DSI / Dual-link LVDS / Parallel RGB, 3D graphics, H.264/H.265 codec　　Memory Interface: 32-bit LPDDR4/LPDDR4X with ECC　　Connectivity for 5G Communication: PCIe 3.0 (2 lanes), USB 3.2 Gen2, USB 2.0 x2, Gigabit Ethernet x2, CAN-FD　　Operating Temperature: -40°C to 125°C　　Package Options: 15mm square 529-pin FCBGA, 21mm square 625-pin FCBGA　　Product Longevity: 15-year supply under Product Longevity Program (PLP)　　System-on-Module Solutions from Renesas and Ecosystem Partners　　Renesas has also introduced system-on-module (SoM) solutions featuring the RZ/G3E. A broad range of SoM solutions will be available from Renesas’ ecosystem partners such as a SMARC module from Tria, an OSM (Size-M) from ARIES Embedded, and an OSM (Size-L) from MXT.　　Winning Combinations　　Renesas combined the RZ/G3E with other compatible devices to develop Full HD Dual-Display HMI Platform and Digital Otoscope solutions. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RZ/G3E is available today, along with the Evaluation Board Kit. The kit includes a SMARC v2.1.1 module board and a carrier board.If you want to buy related products, you can contact AMEYA360's customer service.

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Renesas

Release time：2025-07-30 15:09 reading：556 Continue reading>>

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BIWIN Industrial-Grade TDC200 Series Storage Cards: Built for Multi-Channel 4K Surveillance

　　Designed for high-definition, multi-channel video surveillance, the BIWIN Spec TDC200 Series Industrial-Grade SD Cards & microSD Cards come equipped with various self-developed firmware algorithms featuring high-reliable design and multichannel write optimizations to achieve stable write speeds across multiple video channels. And with design upgrades in physical structure and reliability, these cards are able to support operating temperature within -25°C to 85°C, as well as more protective capabilities like water-, dust-, shock-, wear-, X-ray-resistance and anti-magnetism. They are ideal for intensive scenarios such as vehicle surveillance, security systems, industrial inspection, and medical monitoring applications.　　Reliable Multi-Channel 4K Recording，10 Channels of Continuous Recording Without Frame Drops　　The BIWIN TDC200 series SD Card & microSD Card are equipped with smart data flow technologies which help to distinguish video stream data from system data and allocate them into separate storage zones. This optimized data structure through partitioned storage assists to reduce data fragmentation and write amplification caused by garbage collection (GC) during full-drive write scenarios, so as to extend products’ lifespan. Additionally, the built-in intelligent cache management system minimizes wear from high-frequency access, ensuring stability and reliability during high-load, continuous writing scenarios. The cards support 10 channels of 4K high-definition recording equipment with 7×24-hour stable continuous writing, ensuring no frame drops or stuttering in surveillance and high-definition recording scenarios, with no frame skipping or data loss during playback.　　Adaptive Power Saving for Extended Endurance，Ideal for Demanding Industrial Tasks　　Featured with smart low-power management technology, the TDC200 Series SD Card & microSD Card automatically switches to low power mode under standby state, reducing power consumption from milliamps (mA) to microamps (μA)—a drop of up to 85% in sleep mode. With microsecond-level wake-up response, the cards are especially suited for battery-powered or energy-sensitive applications, such as body-worn cameras, portable surveillance units, and inspection devices, significantly extending device uptime in the field.　　Comprehensive Protection from the Inside Out，Engineered for Harsh Industrial Environments　　In automotive and industrial settings, storage devices must withstand shocks, drops, vibrations, and extreme temperatures. The BIWIN TDC200 Series cards feature a reinforced physical design that ensures stable performance in environments ranging from -25℃ to 85℃. They are built to resist impact, vibration, water, dust, X-rays, and magnetic interference that can lead to circuit shorts or signal loss. Tested under rigorous reliability protocols, the TDC200 achieves a Mean Time Between Failures (MTBF) of up to 3 million hours, greatly reducing the risk of downtime and lowering maintenance costs in mission-critical deployments.　　Built with 3D TLC direct write and multiple software optimization technologies, BIWIN TDC200 Series SD Card & micro SD Card include capabilities of VDT (Voltage Detection Technology), S.M.A.R.T. health monitoring, Power Loss Protection, Intelligent Thermal Throttling and advanced ECC algorithms. VDT and S.M.A.R.T. provide predictive failure analysis and real-time health feedback, while intelligent thermal throttling and data retention safeguard data integrity under high-temperature conditions. These features work together to ensure long-term stability and durability even in the most demanding industrial environments.　　Conclusion　　In application scenarios requiring high-volume, multi-channel video recording, the BIWIN TDC200 Series Industrial-Grade SD & microSD Cards deliver exceptional stability and performance. With zero frame loss and uninterrupted data streams, every critical moment is captured in full. Thanks to superior shock and vibration resistance, these cards are the ideal choice for use in dashcams, in-vehicle DVRs, body-worn cameras, panoramic cameras, smart medical devices, industrial tablets, and industrial UAVs where data integrity is paramount.

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BIWIN

Release time：2025-07-29 15:33 reading：473 Continue reading>>

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SIMCom：A7663E Achieves Key Global Certifications, Enabling Scalable 4G IoT Deployments

　　As the global demand for LTE Cat 1 modules continues to rise in industrial IoT, asset tracking, and metering applications, SIMCom (as a global leader in IoT communication and solution)'s A7663E stands out with a balanced mix of performance, integration flexibility, and certification readiness. The module has recently secured a comprehensive set of international certifications, including RoHS, REACH, CE (RED) for the European market, Anatel for Brazil, and Cybersecurity compliance, paving the way for faster IoT deployment in regulated global markets.　　The A7663E is built LGA form factor, offering high integration capability while maintaining reliability. It supports LTE-FDD with downlink speeds up to 10 Mbps and uplink up to 5 Mbps, making it suitable for medium-data-rate IoT scenarios that demand efficient wireless performance and long lifecycle support. The inclusion of integrated multi-constellation GNSS (GPS, GLONASS, BeiDou) further enhances its value for location-based applications like asset tracking, smart mobility, telematics, surveillance devices, industrial routers, and remote diagnostics and so on.　　Additionally, A7663E provides a rich set of interfaces to support diverse product architectures. Its software feature set includes FOTA (Firmware Over-The-Air), SSL encryption, and LBS—ensuring devices stay secure and up-to-date throughout their lifecycle. This greatly reduces time-to-market and engineering cost.　　With global compatibility, the A7663E is an ideal LTE Cat 1 solution for IoT developers aiming to scale deployments across multiple regions with confidence.

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SIMCom

Release time：2025-07-24 10:37 reading：405 Continue reading>>

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SIMCom Strengthens Japan Market Presence with SIM7672JP Certifications

　　SIMCom, a global leader in IoT communication solutions, announces that its SIM7672JP—powered by the Qualcomm® 216 LTE IoT modem—has successfully obtained key certifications for the Japanese market, including JATE, TELEC, and NTT Docomo Technical Approval (TA). Certification with KDDI is currently ongoing.　　These approvals mark a significant step in SIMCom's strategic expansion into Japan, one of the world’s most advanced and regulated IoT markets.　　Designed to meet Japan's stringent regulatory and operator requirements, the SIM7672JP offers reliable and cost-effective LTE Cat.1 bis connectivity tailored for a wide range of IoT applications. It has already been validated by IIJ (Internet Initiative Japan) and is compatible with the NTT Docomo network, ensuring strong local integration.　　With support for Power Saving Mode (PSM), the SIM7672JP enables long-term, low-power deployments—making it an ideal solution for diverse sectors such as automotive and transport (fleet management, UBI, DVR, public safety), energy and industrial (smart grids, industrial equipment, rugged tablets, infrastructure, pipeline monitoring), consumer and enterprise (payment systems, POS, networking, retail, surveillance), and residential and healthcare (home automation, security, wearables, remote medical devices).　　The SIM7672JP is now in mass production and available for Japanese market. With the latest Japanese certifications, SIMCom is well-positioned to deepen its collaboration with local partners and accelerate the deployment of reliable cellular IoT solutions throughout Japan. SIMCom remains committed to empowering the Japanese IoT ecosystem—with certified, future-proof LTE Cat.1 bis modules that deliver connectivity, efficiency, and compliance.

Key word：

SIMCom

Release time：2025-07-21 14:44 reading：381 Continue reading>>

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Fibocom Debuts 5G Module FG390 Powered by MediaTek T930 Platform, Accelerating FWA Innovation with the Convergence of 5G-A and AI

　　Fibocom, a global leading provider of wireless communication modules and AI solutions, announces the launch of its 5G module FG390, developed on the advanced MediaTek T930 platform. Designed specifically for mobile broadband (MBB) terminal products focused on 5G Fixed Wireless Access (FWA), the FG390 series seeks to boost FWA industry growth across diverse applications such as CPEs, ODUs, mobile hotspot devices, enterprise gateways, and industrial gateways.　　FG390 is a highly integrated, high-performance 5G module built on MediaTek’s advanced T930 chipset, featuring cutting-edge 4nm process technology. It incorporates the MediaTek M90 5G modem alongside a quad-core ARM Cortex-A55 CPU, delivering robust functionality and full compliance with 3GPP Release 18 standards. Supporting downlink 6-carrier aggregation (6CC CA) and uplink 5-layer 3Tx transmission within the 5G NR Sub-6GHz spectrum, the FG390 achieves peak standalone (SA) downlink speeds of up to 10 Gbps and uplink speeds reaching 2.8 Gbps, providing an outstanding high-speed 5G experience. Furthermore, with 200MHz bandwidth and 8Rx technology, the module significantly enhances spectrum efficiency about 40% at cell edges, greatly extending signal coverage. Paired with a dedicated NPU chip, the FG390 powers AI-enabled gateway devices to offer advanced, intelligent network interaction capabilities.　　Amid the swift convergence of 5G-A and AI technologies, the FG390 series harnesses cutting-edge specifications, innovative features, and a comprehensive suite of peripherals to drive digital transformation and continuous innovation across both residential and enterprise applications. This breakthrough empowers telecom operators and the broader market to enhance investment efficiency and accelerate returns in the communications terminal sector.　　Leveraged by the MediaTek T930 platform, the FG390 seamlessly integrates robust 5G Release 18 protocol capabilities with exceptional cellular performance and AI-driven intelligence, setting a new benchmark for the next generation of mobile broadband terminals. Enhanced by a dedicated NPU for AI acceleration, this module empowers transformative applications across smart offices, smart homes, and smart cities. Fibocom remains dedicated to deepening the collaboration with MediaTek to drive continuous innovation in 5G technologies, products, and ecosystem development.

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Fibocom

Release time：2025-07-17 16:21 reading：489 Continue reading>>

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