Basic knowledge of electronic components purchasing -Ameya360 electronic components purchasing website

Trade news

Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.　　Designed for Edge/Endpoint AI　　The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.　　Advanced Technology　　The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.　　“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”　　“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”　　“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”　　Robust, Optimized Peripheral Set for AI　　Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.　　The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.　　New RUHMI Framework　　Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.　　Advanced Security Features　　The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.　　Ready to Use Solutions　　Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.　　Key Features of the RA8P1 MCUs　　Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)　　Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core　　Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface　　Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers　　Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management　　Packages: 224BGA, 289BGA

Key word：

Renesas

Release time：2025-07-04 14:56 reading：248 Continue reading>>

Trade news

Murata Launches World’s First 10µF/50Vdc MLCC in 0805-inch Size for Automotive Applications

　　Murata Manufacturing Co., Ltd. has announced the new GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is the world's first 0805-inch size (2.0 x 1.25 mm) MLCC to offer a capacitance of 10µF with a 50Vdc rating and is specifically engineered for automotive applications*. This cutting-edge product marks a significant advancement in MLCC design, delivering a smaller 0805-inch package while maintaining capacitance, voltage rating, and MLCC reliability.　　Advancements in advanced driver-assistance systems (ADAS) and autonomous driving (AD) technologies necessitate deploying an increased number of integrated circuits (ICs) within vehicle systems. This surge in ICs simultaneously leads to a greater demand for supporting high-capacitance passive components while imposing tighter spatial constraints – as a greater number of capacitors must be accommodated on increasingly crowded automotive printed circuit boards (PCBs).　　Designed for 12V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count, resulting in smaller, more efficient, and reliable automotive systems. As the first automotive-specific MLCC to achieve a 10µF capacitance with a 50Vdc rating in the compact 0805-inch size the GCM21BE71H106KE02 represents a significant advancement in capacitance efficiency. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7µF/50Vdc product, despite sharing the same physical size. Furthermore, compared to the previous 10µF/50Vdc MLCC in the larger 1206-inch size (3.2 x 1.6 mm), the new MLCC occupies approximately 53% less space, providing substantial space savings for automotive applications.　　Murata will continue to pursue further miniaturization and increased capacitance of MLCCs, while expanding its product lineup to meet the evolving needs of the automotive market. These efforts will support the industry as they look to develop higher-performance and more multifunctional vehicles. In addition, by downsizing electronic components, Murata aims to reduce material usage and improve production efficiency per unit, helping to lower electricity consumption at its manufacturing sites and reduce overall environmental impact.

Key word：

Murata

Release time：2025-07-04 13:59 reading：294 Continue reading>>

Trade news

GD32C231 Series MCU — Redefining Cost-Performance, Unleashing New Potential

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially launched the value-packed GD32C231 series of entry-level microcontrollers, further expanding its Arm® Cortex®-M23 core product lineup. As the leader in China's largest Arm® MCU market, GigaDevice positions the GD32C231 series as a "high-performance entry-level" solution designed to offer more competitive options for applications including small home appliances, BMS (Battery Management Systems), small-screen display devices, handheld consumer products, industrial auxiliary controls, and automotive aftermarket systems.　　With over 2 billion cumulative MCU shipments and a mature supply chain, GigaDevice's newly launched GD32C231 series overcomes the performance limitations of traditional entry-level chips through innovative design. The series not only integrates a rich set of peripherals but also adopts an industrial-grade wide-voltage process and offers a comprehensive ecosystem. While maintaining exceptional cost-effectiveness, this affordable MCU supports more complex application scenarios, redefining value standards in the entry-level MCU market and ushering in a new era of "affordable yet high-spec" solutions.　　GD32C231 Series MCUs: The Ultimate Choice for Cost-Effectiveness　　The GD32C231 series MCUs deliver a significant upgrade in computing performance and peripheral features while maintaining excellent price competitiveness, achieving an ultra-high cost-performance balance. Built on Arm's advanced Cortex®-M23 core architecture, the series offers up to 10% higher performance than Cortex®-M0+, with clock speeds reaching 48MHz. It supports efficient processing capabilities such as integer division, greatly enhancing software execution efficiency.　　In terms of memory configuration, the series features 32KB to 64KB of highly reliable embedded Flash and 12KB of low-power SRAM, with full memory areas equipped with ECC error correction. To meet the demands of diverse applications, multiple package options are available, including TSSOP20/LGA20, QFN28, LQFP32/QFN32, and LQFP48/QFN48. Thanks to its highly integrated chip design, the series effectively reduces the number of external components, providing users with a bill-of-materials (BOM) cost-optimized solution.GD32C231 Product Portfolio　　The Perfect Balance of Wide Voltage Support, Low Power, and Fast Wake-up Time　　The GD32C231 series delivers exceptional power flexibility and energy efficiency, supporting a wide operating voltage range from 1.8V to 5.5V and a broad temperature range from -40°C to 105°C. This makes it highly adaptable for deployment in harsh and demanding environments. Featuring multiple power management modes, the device consumes as little as 5μA in deep sleep mode and offers ultra-fast 2.6μs wake-up time - achieving an optimal balance between low power consumption and real-time performance. These capabilities make the GD32C231 ideal for battery-powered and portable applications.　　Reliable Operation for Safety-Critical Applications　　Engineered for reliability, the GD32C231 provides robust ESD protection - meeting 8kV contact discharge and 15kV air discharge standards. Full ECC error correction is applied across Flash and SRAM memory, helping to prevent data corruption. An integrated hardware CRC module further enhances data transmission integrity. These features ensure the MCU performs reliably in safety-critical environments such as industrial automation and automotive electronics.　　Highly Integrated Peripherals for Flexible Design　　The GD32C231 series integrates a comprehensive set of peripherals, significantly enhancing system integration and design flexibility:　　A 12-bit ADC with 13 external channels and 2 internal comparators for precise analog signal measurement.　　Up to 4 general-purpose 16-bit timers and 1 advanced 16-bit timer for versatile time-based operations.　　2 high-speed SPI interfaces (including quad QSPI at 24Mbps), 2 I²C interfaces (supporting Fast Mode+ at 1Mbit/s), and 3 UARTs (up to 6Mbps) for robust serial communication.　　An integrated 3-channel DMA controller and 1 I²S interface for efficient peripheral data handling.　　With support for up to 45 GPIOs in a 48-pin package, the GD32C231 offers excellent expandability for complex designs. These rich peripheral resources empower the MCU to meet the demands of a wide range of applications - from consumer electronics to industrial control systems - with ease and reliability.GD32C231 block diagram　　Full-Stack Ecosystem Support for Efficient Development　　The GD32C231 series is backed by a comprehensive development ecosystem designed to accelerate product design and time-to-market. Standard software libraries and resources are readily available on GigaDevice's official website.　　To support developers throughout the entire development cycle, GigaDevice provides extensive documentation, including datasheets, user manuals, hardware design guidelines, application notes, and porting references - enabling rapid onboarding for both hardware and software development. A complete SDK firmware package is also offered, featuring rich sample code and development board resources that cover everything from low-level drivers to advanced applications.　　The GD32 MCU family natively supports FreeRTOS, offering developers a lightweight, open-source, and high-efficiency real-time operating system. To streamline development even further, GigaDevice offers the GD32 Embedded Builder IDE - its proprietary development environment that integrates graphical configuration and intelligent code generation, reducing design complexity. The GD32 All-In-One Programmer supports essential Flash operations such as programming, erasing, reading, and option byte configuration. Meanwhile, the GD-Link debugger provides dual-mode SWD/JTAG support with plug-and-play functionality for a seamless debugging experience. GigaDevice also collaborates closely with third-party programming tool providers to offer customers a wide range of programming and debugging options.　　Additionally, the GD32C231 series is fully compatible with major international toolchains including Arm® Keil, IAR Embedded Workbench, and SEGGER Embedded Studio, ensuring flexibility across various development platforms. For typical use cases, GigaDevice provides robust application solutions and reference designs - helping developers shorten design cycles, simplify product validation, and accelerate the path to mass production.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.GigaDevice.com　　*GigaDevice, GD32, and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.

Key word：

GigaDevice

Release time：2025-06-30 14:52 reading：292 Continue reading>>

Trade news

ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　~Integration in traction inverters extends the cruising range and improves performance~　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.　　About the "bZ5"　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.　　About HAIMOSIC (SHANGHAI) Co., Ltd.　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/

Key word：

ROHM

Release time：2025-06-23 14:11 reading：299 Continue reading>>

Trade news

New High Accuracy Current Sense Amps Compatible with Both Negative and High Voltages

　　ROHM has developed a new lineup of high accuracy current sense amps – the BD1423xFVJ-C and the BD1422xG-C. They are qualified under the AEC-Q100 automotive reliability standard. The BD1423xFVJ-C series, offered in the TSSOP-B8J package, supports input voltages up to +80V, making it ideal for high-voltage environments such as 48V DC-DC converters, redundant power supplies, auxiliary batteries, and electric compressors. The series includes three models with different gain settings: BD14230FVJ-C, BD14231FVJ-C and BD14232FVJ-C.　　For lower voltage use cases, the BD1422xG-C, available in the compact SSOP6 package, supports input voltages up to +40V. This makes them suitable for automotive applications requiring space-saving designs, such as current monitoring and protection (overcurrent) in 5V/12V power supply networks used in body and drivetrain domains. Like its high-voltage counterpart, this series also consists of three different gain options: BD14220G-C, BD14221G-C and BD14222G-C.　　In recent years, alongside conventional 5V/12V power supplies, the automotive market has seen a growing adoption of 48V systems fueled by the rising popularity of electric vehicles. Furthermore, as vehicle functionality becomes more advanced, the need for precise monitoring and control across a wide range of applications continues to increase, placing a greater importance on high-accuracy current sensing.　　A current sense amp indirectly measures the current flowing through a circuit by amplifying the miniscule voltage drop across a shunt resistor. The amplified signal is then sent to an ADC or comparator for system control and monitoring. ROHM’s automotive-grade current sense amps meet market demands by leveraging proven analog expertise. This enables high-accuracy current sensing with compatibility for both negative and high voltage environments, contributing to improved safety and reliability in automotive applications, particularly electric vehicles.　　These new products achieve greater space efficiency by integrating most of current sensing circuitry, typically comprised of an operational amplifier and discrete components, int o a single package. As a result, current detection is possible by simply connecting a shunt resistor. The devices also feature a two-stage amplifier configuration, consisting of a chopper amplifier at the input and an auto-zero amplifier at the output. Internal resistor matching for gain setting ensures stable, accurate current sensing (±1%) while minimizing the effects of temperature variations.　　Furthermore, current detection accuracy is maintained even when an external RC filter circuit added for noise suppression, significantly reducing design complexity and development time. Additional features include -14V negative voltage tolerance that supports back electromotive force, reverse connection, and negative voltage input.　　Going forward, ROHM will continue to deliver optimal solutions that contribute to higher precision and enhanced reliability in automotive equipment.　　Application Examples　　• BD1423xFVJ-C (for 48V systems): Redundant power supplies, auxiliary batteries, DC-DC converters, and electric compressors, and the like　　• BD1422xG-C (for 5V/12V systems): Body DCUs (Domain Control Units) / ECUs (Electronic Control Units), etc.　　Terminology　　AEC-Q100 Automotive Reliability Standard　　AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q100 is a standard that specifically applies to integrated circuits (ICs).　　Shunt Resistor　　A resistor connected in series in the current path to detect the current in the circuit by measuring the potential difference across it.　　Chopper Amp　　An amp circuit designed to minimize signal offset and noise, primarily used for accurately amplifying low-frequency and weak DC signals.　　Auto-Zero Amp　　An amp that automatically compensates for offset voltage (unwanted noise and errors) by continuously sampling and correcting it during operation. This ensures high signal accuracy, making it ideal for applications that demand ultra-precise measurement and signal processing.

Key word：

ROHM

Release time：2025-06-13 16:56 reading：333 Continue reading>>

Trade news

ROHM Builds the Future of AI with Optimized Solutions for NVIDIA 800V Architecture

　　As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements must evolve in parallel. A recognized leader in power semiconductor technology, ROHM is proud to be among the key silicon providers supporting NVIDIA’s new 800 V High Voltage Direct Current (HVDC) architecture. This marks a pivotal shift in data center design, enabling megawatt-scale AI factories that are more efficient, scalable, and sustainable.　　ROHM’s power device portfolio spans both silicon and wide bandgap technologies, including silicon carbide (SiC) and gallium nitride (GaN), offering a strategic path for data center designers. The company’s silicon MOSFETs are already widely adopted across automotive and industrial sectors, providing a cost-effective and reliable solution for today’s power conversion needs. These are ideal for applications where price, efficiency, and reliability must be balanced, making them a strong fit for transitional stages of AI infrastructure development.　　A standout example is the RY7P250BM, a 100V power MOSFET endorsed by major global cloud providers designed specifically for hot-swap circuits in 48V power systems—an essential component in AI servers. Key features include best-in-class SOA (Safe Operating Area) performance and ultra-low ON resistance (1.86 mΩ) in a compact 8080 package. These characteristics help reduce power loss and improve system reliability—crucial requirements in high-density, high-availability cloud platforms. As data centers transition from 12V to 48V and beyond, hot-swap capability becomes critical for maintaining uptime and protecting against inrush currents.　　Industrial-grade rectification with minimal losses is an area where ROHM’s SiC devices excel and align with NVIDIA’s plans to begin large-scale deployment of its 800V HVDC data center architecture to power 1 MW compute racks and beyond. At the heart of NVIDIA’s new infrastructure is the conversion of 13.8kV AC from the grid directly into 800V DC. The initiative is designed to address the inefficiencies of traditional 54V rack power systems, which are constrained by physical space, copper overload, and conversion losses.　　ROHM’s SiC MOSFETs deliver superior performance in high-voltage, high-power environments, offering higher efficiency through reduced switching and conduction losses, greater thermal stability for compact, high-density systems, and proven reliability in mission-critical applications. These characteristics align perfectly with the requirements of the NVIDIA 800 V HVDC architecture, which aims to reduce copper usage, minimize energy losses, and simplify power conversion across the data center.　　Complementing SiC, ROHM is advancing gallium nitride technologies under the EcoGaN™ brand. While SiC is best-suited for high voltage, high current applications, GaN offers exceptional performance in the 100V to 650V range, with superior breakdown field strength, low ON resistance, and ultra-fast switching. ROHM’s broad EcoGaNTM lineup includes 150V and 650V GaN HEMTs, gate drivers, and integrated power stage ICs. At the same time, proprietary Nano Pulse ControlTM technology further improves switching performance, reducing pulse widths to as low as 2ns. These innovations support the growing demand for smaller, more efficient power systems in AI data centers.　　Beyond discrete devices, ROHM offers a lineup of high-power SiC modules, including top-side cooling molded packages such as the HSDIP20, equipped with advanced 4th Gen SiC chips. These 1200V SiC modules are optimized for LLC topologies in AC-DC converters and primary-side applications in DC-DC converters. Engineered for high-efficiency, high-density power conversion, they are particularly well-suited for the centralized power systems envisioned in NVIDIA’s architecture. Their robust thermal performance and scalability make them ideal for 800 V busways and MW-scale rack configurations.　　The transition to an 800V HVDC infrastructure is a collaborative effort. ROHM is committed to working closely with industry leaders like NVIDIA as well as data center operators and power system designers to provide the foundational silicon technologies needed for this next generation of AI factories. Our expertise in power semiconductors, particularly in wide-bandgap materials like SiC and GaN, positions us as a key partner in developing solutions that are not only powerful but also contribute to a more sustainable and energy-efficient digital future.

Key word：

ROHM

Release time：2025-06-13 16:52 reading：328 Continue reading>>

Trade news

Fibocom Releases 5G AI Mobile Hotspot Solution, Unlocking Intelligent Future for Mobile Broadband Devices

　　As 5G and AI technologies continue to converge, demand is growing for stable, high-speed, and intelligent mobile networks across various scenarios—from business travel and outdoor operations to global connectivity. Fibocom’s latest 5G AI Mobile Hotspot solution redefines the mobile broadband experience with cutting-edge technology and forward-thinking design.　　Powered by Qualcomm’s advanced 4nm QCM4490 platform, the solution combines smartphone-grade ultra-low power consumption with precision circuit design. This results in a powerful yet energy-efficient platform that balances high performance with cost optimization.　　In terms of connectivity, the solution supports 3GPP Release 16 and NR 2CC 120MHz. It delivers a downlink speed of up to 2.3 Gbps in SA mode and 2.5 Gbps in NSA mode. Customers can flexibly configure the solution with either AX3600-based Wi-Fi 6E or BE5800-based Wi-Fi 7 options. It supports dual-band simultaneous (DBS) modes of 2.4GHz+5GHz or 2.4GHz+6GHz, as well as high-band simultaneous (HBS) mode of 5GHz+6GHz.　　Tailored for Mobile Hotspot applications, the solution runs an optimized Android 13 OS, significantly boosting system performance while reducing power consumption. With USB 3.1 support and a theoretical data transfer rate of up to 5 Gbps, it’s well-suited not only for 5G Mobile Hotspot devices but also for other mobile broadband terminals such as USB dongles.　　Crucially, the solution leverages the QCM4490’s heterogeneous computing architecture, featuring a robust 8-core CPU (2x Cortex-A78 @ 2.4GHz + 6x Cortex-A55 @ 2.0GHz) and integrated Adreno 613 GPU (@ 1010MHz). Compared to GPU-less solutions, this powerful combination enables efficient on-device AI processing, expanding the possibilities for more edge intelligence applications. Internal tests have demonstrated the successful deployment of large-scale open-source AI models such as Qwen-1.8 B-Chat.　　From business office to global travel these mobile broadband applied scenarios, Fibocom’s cost-effective 5G AI Mobile Hotspot solution—with optional Wi-Fi 7 support—paves the way for a new era of AI-enhanced mobile broadband.

Key word：

Fibocom

Release time：2025-06-06 15:38 reading：370 Continue reading>>

Trade news

TAIYO YUDEN: World's First Multilayer Metal Power Inductor Capable of Withstanding Temperatures up to 165°C

　　TAIYO YUDEN CO., LTD. has commercialized four items, including the multilayer metal power inductor MCOIL™ "LACNF2012KKTR24MAB" (2.0 x 1.25 x 1.0 mm, maximum height value shown), which complies with the "AEC-Q200" reliability qualification test standard for passive automotive components. Through advancements made in our proprietary metal materials and multilayer construction methods, we have achieved an upper operating temperature limit of 165°C for a multilayer metal power inductor, a world’s first *1 .　　These products are used as choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　By extending the upper operating temperature limit range of our conventional product "LCCNF2012KKTR24MAD" (operating temperature range: -55°C to +150°C) to 165°C, these new products are able to contribute to the miniaturization and performance enhancement of power supply circuits by enabling high-density mounting in high-temperature environments such as in automobiles.　　Mass production of these products began at our subsidiary, WAKAYAMATAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan), in April 2024. Samples are available for 50 yen per unit.　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller and thinner in order to arrange devices in highly dense configurations and integrate them into single modules. Components mounted at high densities become more susceptible to the effects of heat, as their reduced volumes makes it more difficult for the heat generated by the components to dissipate. Furthermore, since ECUs are increasingly being installed in engine compartments—a high temperature environment—on-board electronic components must be able to withstand high temperatures.　　To address these challenges, TAIYO YUDEN further improved the reliability of the MCOIL™ LCCN series of multilayer metal power inductors, which had the advantage of being smaller and thinner, and launched the AEC-Q200 certified LACN series which provides an extended operating temperature range of - 55°C to +165°C.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　*1 As of May 30, 2024, according to TAIYO YUDEN study.　　■Application　　Choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　■Characteristics　　*2 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*3 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*4 The rated current is the DC current value that satisfies both of current value saturation current value and temperature rise current value.　　* Derating of rated current is necessary depending on the ambient temperature. Please see our website below for detailed specifications

Key word：

TAIYO

Release time：2025-05-30 14:21 reading：306 Continue reading>>

Trade news

TAIYO YUDEN Expands Lineup of Multilayer Metal Power Inductors for Smartphones

　　TAIYO YUDEN CO., LTD. has begun mass production of three products, including the LSCND1412FETR47ME (1.4 x 1.2 x 0.65 mm; maximum height shown), in its MCOIL™ LSCN series of multilayer metal power inductors.　　These power inductors are for use as choke coils in the power circuits of smartphones. Retaining the same form factor as our previous product "LSCND1412FETR47MC" (1.4 x 1.2 x 0.65 mm), the DC superposition allowable current of our new "LSCND1412FETR47ME" has been increased by 20% to 3.6 A (previously 3.0 A), and its DC resistance has been reduced by 10% to 38 mΩ (previously 42 mΩ). These improvements contribute to boosting the performance of power supply circuits in smartphones, which are becoming increasingly sophisticated and multifunctional.　　Mass production of these products commenced at our subsidiary WAKAYAMATAIYO YUDEN CO. LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan). Samples are available for 50 yen per unit.　　Technology Background　　Smartphones are becoming increasingly sophisticated, with capabilities such as AI-based image and video editing, as well as voice and text translation. At the same time, there is demand for greater efficiency in order to keep their body small, and achieve long operating times with limited battery capacity. To achieve both high performance and high efficiency, a smartphone’s processor operates at high speeds with low voltage and high current, and employs a multi-core configuration where each core is equipped with its own power supply circuit, allowing it to improve both its processing power and efficiency by switching the cores used depending on load. This trend in power supply circuits has become particularly pronounced in cutting-edge smartphones, which require both high performance and high efficiency, and in recent years has led to an increase in the adoption of small and thin low-inductance power inductors capable of handling large currents.　　To address these needs, at TAIYO YUDEN we have been using metallic magnetic materials with high DC superposition characteristics to optimize the design and other aspects of our MCOIL™ LSCN series multilayer metal power inductors—which have the advantage of allowing them to be made more compact and thinner—commercializing three products, including “LSCND1412FETR47ME,” which deliver 20% greater DC superposition allowable current and 10% smaller DC resistance compared to our previous products.　　In response to market needs, we will continue to expand and improve our product lineup with higher functionality and reliability, as well as smaller and thinner products.　　■ Application　　For use as a choke coil for power circuits in smartphones and other devices.　　■Characteristics　　*1 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*2 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*3 The rated current value is following either Idc1(max) or Idc2(max), which is the lower one.　　* “MCOIL” is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.　　* The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.

Key word：

TAIYO

Release time：2025-05-30 13:51 reading：353 Continue reading>>

Trade news

Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new high-performance microprocessor (MPU) in the RTOS-based RZ/A series that meets the growing demands of advanced human-machine interface (HMI) systems. The new RZ/A3M MPU comes with large SDRAM, SRAM and RTOS support to facilitate the seamless execution of complex tasks and real-time graphical displays. The RZ/A3M drives video and camera output on large LCD panels with resolutions up to 1280x800, addressing the display requirements in next-generation home appliances, industrial and office automation, healthcare devices and building control systems.　　Similar to its existing RZ/A3UL, the RZ/A3M features a 64-bit Arm® Cortex®-A55 core with a maximum operating frequency of 1 GHz and 128 KB (kilobytes) of on-chip SRAM. By integrating high-speed 128MB DDR3L-SDRAM in a single System-in-Package (SiP), the device eliminates the complex task of designing a high-speed signal interface for connecting external memory.　　Reducing System Cost with Built-in Memory and Simplified PCB Design　　The RZ/A3M is designed to reduce system costs and accelerate development. It supports both external NAND and NOR flash via QSPI for data and code storage. Paired with a driver, high-capacity NAND flash offers a cost-effective option for memory expansion. Additionally, the RZ/A3M's BGA package has a unique pin layout with two main rows positioned on the outside edge. This layout simplifies PCB routing and enables a low-cost, dual-layer printed wiring board design, providing significant cost and time savings. This memory integration simplifies PCB design by reducing the routing complexity and minimizing layout constraints.　　“I’m pleased to launch the RZ/A3M, the first RZ product with large built-in memory targeting high-function video/animation HMI performance while keeping overall system costs low,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “In addition, we aim to deliver a highly responsive user experience with high-quality, real-time graphics, and provide the ease of design and cost efficiency to help our customers build advanced HMI solutions quickly.”　　Comprehensive Development Environment　　Renesas offers a comprehensive HMI development environment that includes the Flexible Software Package (FSP), evaluation kits, development tools, and sample software. Graphical user interface (GUI) solutions from partner companies such as LVGL, Crank, SquareLine Studio, and Envox will be available for the RZ/A3M to facilitate rapid HMI graphics development.　　Key Features of RZ/A3M　　Arm Cortex-A55 CPU with a maximum operating frequency of 1GHz　　128KB SRAM with error correction, Built-in 128MB DDR3L SDRAM　　Graphics capabilities: LCD controller supporting resolutions up to 1280x800 (WXGA), parallel RGB and MIPI-DSI (4-lane) interfaces, 2D graphics drawing engine　　Peripheral functions: QSPI interface for serial NOR/NAND flash memory, SPI, I2C, SDHI, USB2.0, I2S, temperature sensor, timer　　Package: 244-pin LFBGA, 17mm x 17mm, 0.8mm pitch　　Renesas’ Comprehensive HMI Solutions　　Renesas offers a wide variety of HMI solutions ranging from the 32-bit RX and RA MCU families to the 64-bit RZ family supporting 4K displays. The RZ/A series, built on RTOS-based MPUs with fast startup, includes the new RZ/A3M, which delivers high-performance HMI capabilities with the same ease of use offered by MCUs using large memory capacity.　　Multi-HMI Winning Combination　　Renesas offers Multi-HMI Solution which combines the new RZ/A3M MPU with numerous compatible devices from its portfolio to offer HMI functions for appliances. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.

Key word：

Renesas

Release time：2025-05-26 14:49 reading：421 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
CDZVT2R20B	ROHM Semiconductor
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
TPS63050YFFR	Texas Instruments

PART	Quantity*	Target Price
	Quantity MOQ: 1	Target Price $ If not sure, you may skip this
remark

Telephone *	Name
Company
Email