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Murata Unveils First High-Frequency XBAR Filter for Next-Gen Networks

　　Murata Manufacturing Co., Ltd. has announced the mass production and commercial shipment of the world’s first*1 high-frequency filter using XBAR technology*2. Developed by combining Murata’s proprietary Surface Acoustic Wave (SAW) filter expertise with XBAR technology from Murata's subsidiary Resonant Inc., it enables the extraction of desired signals while achieving both low insertion loss and high attenuation. These features are critical for the latest wireless technologies, including 5G, Wi-Fi 6E, Wi-Fi 7, and emerging 6G technologies.　　The demand for reliable high-frequency communications continues to grow in response to the widespread deployment of 5G and the future development of 6G. Simultaneously, wireless local-area network (WLAN) standards such as Wi-Fi 6E and Wi-Fi 7 are expanding into higher frequency domains to accommodate ultra-fast data rates. Filters used in these applications must address key challenges, such as preventing out-of-band interference, maximizing system battery performance, and meeting strict space limitations. Traditional approaches using Low Temperature Co-Fired Ceramic (LTCC) or conventional Bulk Acoustic Wave (BAW) filters often fall short in these performance areas.　　Murata’s new XBAR-based filter addresses these limitations by achieving high attenuation performance while maintaining a wide bandwidth and low signal loss. The XBAR structure itself excites bulk acoustic waves using comb-shaped electrodes and a piezoelectric single-crystal thin film, enabling performance beyond the reach of conventional filter structures. It effectively removes high-frequency interference, even in bands above 3 GHz, allowing for clearer signal detection and better performance, contributing to high-speed, high-capacity, and high-quality wireless communication.　　Key performance parameters include a passband of 5150–7125 MHz, a typical insertion loss of 2.2 dB, and a typical return loss of 17 dB. Typical attenuation figures are 11 dB at 4800–5000 MHz, 28 dB at 3300–4800 MHz, 27 dB at 7737–8237 MHz, and 26 dB at 10300–14250 MHz.　　The new filter is targeted at devices with embedded wireless functionality, including smartphones, wearables, notebook PCs, and communication gateways, offering an optimal balance of performance and cost efficiency. Murata will continue to drive innovation in filter technologies to support the evolution of wireless communications, and expects this architecture to scale further, with future product generations capable of operating effectively in ultra-high frequency bands above 10GHz.　　Notes　　*1According to Murata research as of July 7, 2025.　　*2XBAR technology: Murata’s proprietary filter structure that excites bulk acoustic waves using comb-shaped electrodes and piezoelectric single-crystal thin films.

Key word：

Murata

Release time：2025-07-10 14:15 reading：227 Continue reading>>

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Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size

　　Murata Manufacturing Co., Ltd. has begun the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm) multilayer ceramic capacitors (MLCC) with a capacitance of 47µF*. The new product line, available in two variants with different temperature characteristics, is designed to advance MLCC miniaturization and enhance customer system performance.　　In recent years, high-performance IT solutions, such as those used in AI servers and data centers, have seen rapid growth. Due to the often high component density demanded by these devices, optimized component placement within limited PCB areas is paramount. As a result, there is increasing demand for capacitors that offer both miniaturization and higher capacitance, along with high reliability under high-temperature conditions caused by heat generated from PCBs and integrated circuits (ICs).　　In response to these requirements, Murata has utilized its proprietary technologies in ceramic dielectric layers and internal electrode miniaturization to facilitate the world’s first mass production of this innovative 47µF product in the compact 0402-inch size. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60%. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22µF product in the same 0402-inch size.　　The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85°C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105°C. The ability to operate in environments up to 105°C, makes the X6S variant well-suited for placement near ICs, thereby contributing to improved device performance and integration. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.　　Murata is committed to advancing miniaturized capacitors with higher capacitance and improved high-temperature reliability to meet evolving market demands. These innovations not only support the ongoing miniaturization and functional enhancement of electronic devices but also contribute to lower material usage and increased production efficiency per unit, ultimately helping reduce power consumption at Murata’s factories and lessen environmental impact.　　For inquiries regarding this product, please contact us.　　Notes　　*Based on Murata research as of July 9, 2025.

Key word：

Murata

Release time：2025-07-10 14:13 reading：231 Continue reading>>

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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.

Key word：

Renesas

Release time：2025-07-04 15:04 reading：303 Continue reading>>

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Murata Launches World’s First 10µF/50Vdc MLCC in 0805-inch Size for Automotive Applications

　　Murata Manufacturing Co., Ltd. has announced the new GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is the world's first 0805-inch size (2.0 x 1.25 mm) MLCC to offer a capacitance of 10µF with a 50Vdc rating and is specifically engineered for automotive applications*. This cutting-edge product marks a significant advancement in MLCC design, delivering a smaller 0805-inch package while maintaining capacitance, voltage rating, and MLCC reliability.　　Advancements in advanced driver-assistance systems (ADAS) and autonomous driving (AD) technologies necessitate deploying an increased number of integrated circuits (ICs) within vehicle systems. This surge in ICs simultaneously leads to a greater demand for supporting high-capacitance passive components while imposing tighter spatial constraints – as a greater number of capacitors must be accommodated on increasingly crowded automotive printed circuit boards (PCBs).　　Designed for 12V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count, resulting in smaller, more efficient, and reliable automotive systems. As the first automotive-specific MLCC to achieve a 10µF capacitance with a 50Vdc rating in the compact 0805-inch size the GCM21BE71H106KE02 represents a significant advancement in capacitance efficiency. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7µF/50Vdc product, despite sharing the same physical size. Furthermore, compared to the previous 10µF/50Vdc MLCC in the larger 1206-inch size (3.2 x 1.6 mm), the new MLCC occupies approximately 53% less space, providing substantial space savings for automotive applications.　　Murata will continue to pursue further miniaturization and increased capacitance of MLCCs, while expanding its product lineup to meet the evolving needs of the automotive market. These efforts will support the industry as they look to develop higher-performance and more multifunctional vehicles. In addition, by downsizing electronic components, Murata aims to reduce material usage and improve production efficiency per unit, helping to lower electricity consumption at its manufacturing sites and reduce overall environmental impact.

Key word：

Murata

Release time：2025-07-04 13:59 reading：325 Continue reading>>

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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.

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ROHM

Release time：2025-07-03 14:52 reading：233 Continue reading>>

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GigaDevice Anchors Global Headquarters in Singapore to Power Synergy and Impact

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially opened its global headquarters in Singapore. This strategic move marks a major milestone in GigaDevice's international growth journey, underscoring its commitment to closer customer engagement, building a resilient and agile supply chain, and strengthening its ecosystem and brand presence across key global markets.　　Founded in 2005, GigaDevice has rapidly built a competitive product portfolio and innovative solutions. Its SPI NOR Flash commands the No. 2 global position with a 20.4% market share, and it ranks No. 7 worldwide in the 32-bit general-purpose MCU segment. Serving diverse sectors including industrial, automotive, consumer, and IoT, GigaDevice is recognized for delivering semiconductor solutions with reliability and innovation at its core.　　As global demand for smart, connected technologies accelerates—particularly in industrial automation, automotive electronics, and intelligent edge devices—GigaDevice is sharpening its focus on innovation, supply chain agility, and ecosystem collaboration. The company is positioning itself to meet the evolving needs of international customers and capture opportunities across fast-growing markets.　　"We chose Singapore not just for its strategic location, but for its clarity, consistency, and global ambition," said Jennifer Zhao, GigaDevice Global Business CEO. "This is more than a regional office—it's a collaborative innovation hub where expertise across disciplines and borders comes together to build smarter systems, accelerate execution, and power what's next."　　Singapore's robust infrastructure, pro-innovation environment, and exceptional talent pool have established it as a global premier technology and business hub. Its strong connectivity, transparent regulatory framework, and dedication to digital transformation provide the ideal foundation for companies like GigaDevice to scale globally while maintaining agility and future readiness.　　Functioning alongside GigaDevice's group headquarters in China, the Singapore global headquarters will serve as a central platform to drive global coordination, foster localized product innovation, and deepen collaboration with customers and supply chain partners. From this base, the company aims to expand its presence in international markets and build a more connected, agile, and responsive global ecosystem.

Key word：

GigaDevice

Release time：2025-06-30 14:57 reading：303 Continue reading>>

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TAIYO YUDEN: World's First Multilayer Metal Power Inductor Capable of Withstanding Temperatures up to 165°C

　　TAIYO YUDEN CO., LTD. has commercialized four items, including the multilayer metal power inductor MCOIL™ "LACNF2012KKTR24MAB" (2.0 x 1.25 x 1.0 mm, maximum height value shown), which complies with the "AEC-Q200" reliability qualification test standard for passive automotive components. Through advancements made in our proprietary metal materials and multilayer construction methods, we have achieved an upper operating temperature limit of 165°C for a multilayer metal power inductor, a world’s first *1 .　　These products are used as choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　By extending the upper operating temperature limit range of our conventional product "LCCNF2012KKTR24MAD" (operating temperature range: -55°C to +150°C) to 165°C, these new products are able to contribute to the miniaturization and performance enhancement of power supply circuits by enabling high-density mounting in high-temperature environments such as in automobiles.　　Mass production of these products began at our subsidiary, WAKAYAMATAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan), in April 2024. Samples are available for 50 yen per unit.　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller and thinner in order to arrange devices in highly dense configurations and integrate them into single modules. Components mounted at high densities become more susceptible to the effects of heat, as their reduced volumes makes it more difficult for the heat generated by the components to dissipate. Furthermore, since ECUs are increasingly being installed in engine compartments—a high temperature environment—on-board electronic components must be able to withstand high temperatures.　　To address these challenges, TAIYO YUDEN further improved the reliability of the MCOIL™ LCCN series of multilayer metal power inductors, which had the advantage of being smaller and thinner, and launched the AEC-Q200 certified LACN series which provides an extended operating temperature range of - 55°C to +165°C.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　*1 As of May 30, 2024, according to TAIYO YUDEN study.　　■Application　　Choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　■Characteristics　　*2 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*3 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*4 The rated current is the DC current value that satisfies both of current value saturation current value and temperature rise current value.　　* Derating of rated current is necessary depending on the ambient temperature. Please see our website below for detailed specifications

Key word：

TAIYO

Release time：2025-05-30 14:21 reading：316 Continue reading>>

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TAIYO YUDEN Expands Lineup of Multilayer Metal Power Inductors for Smartphones

　　TAIYO YUDEN CO., LTD. has begun mass production of three products, including the LSCND1412FETR47ME (1.4 x 1.2 x 0.65 mm; maximum height shown), in its MCOIL™ LSCN series of multilayer metal power inductors.　　These power inductors are for use as choke coils in the power circuits of smartphones. Retaining the same form factor as our previous product "LSCND1412FETR47MC" (1.4 x 1.2 x 0.65 mm), the DC superposition allowable current of our new "LSCND1412FETR47ME" has been increased by 20% to 3.6 A (previously 3.0 A), and its DC resistance has been reduced by 10% to 38 mΩ (previously 42 mΩ). These improvements contribute to boosting the performance of power supply circuits in smartphones, which are becoming increasingly sophisticated and multifunctional.　　Mass production of these products commenced at our subsidiary WAKAYAMATAIYO YUDEN CO. LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan). Samples are available for 50 yen per unit.　　Technology Background　　Smartphones are becoming increasingly sophisticated, with capabilities such as AI-based image and video editing, as well as voice and text translation. At the same time, there is demand for greater efficiency in order to keep their body small, and achieve long operating times with limited battery capacity. To achieve both high performance and high efficiency, a smartphone’s processor operates at high speeds with low voltage and high current, and employs a multi-core configuration where each core is equipped with its own power supply circuit, allowing it to improve both its processing power and efficiency by switching the cores used depending on load. This trend in power supply circuits has become particularly pronounced in cutting-edge smartphones, which require both high performance and high efficiency, and in recent years has led to an increase in the adoption of small and thin low-inductance power inductors capable of handling large currents.　　To address these needs, at TAIYO YUDEN we have been using metallic magnetic materials with high DC superposition characteristics to optimize the design and other aspects of our MCOIL™ LSCN series multilayer metal power inductors—which have the advantage of allowing them to be made more compact and thinner—commercializing three products, including “LSCND1412FETR47ME,” which deliver 20% greater DC superposition allowable current and 10% smaller DC resistance compared to our previous products.　　In response to market needs, we will continue to expand and improve our product lineup with higher functionality and reliability, as well as smaller and thinner products.　　■ Application　　For use as a choke coil for power circuits in smartphones and other devices.　　■Characteristics　　*1 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*2 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*3 The rated current value is following either Idc1(max) or Idc2(max), which is the lower one.　　* “MCOIL” is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.　　* The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.

Key word：

TAIYO

Release time：2025-05-30 13:51 reading：360 Continue reading>>

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EMC components: TDK offers multilayer chip beads with the industry's highest rated current of 8 A for power supply lines

　　TDK Corporation (TSE: 6762) has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm – L x W x H). Mass production of the product series began in May 2025.　　These 1608-size chip beads for power supply lines achieve a rated current of 8 A, the industry’s highest value*. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. TDK’s new product simplifies the circuit structure because fewer components are required compared to conventional methods, and it improves the quality of power circuits.　　The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the highly reliable components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.　　With TDK’s proprietary materials and structural designs adapted to market needs, the company is committed to expanding its lineup of high rated current products in the automotive, industrial equipment, and consumer equipment areas. These chip beads will serve as EMC components contributing to the enhancement of the quality of power circuits.　　Glossary　　EMC: electromagnetic compatibility　　Main applications　　Power circuit for different pieces of equipment: in-vehicle ECUs, power train, vehicle body control, automotive multimedia (telematics), base stations, PCs, servers, set-top box, smart grids, robots, smartphones, tablet devices, etc.　　Main features and benefits　　Compatible with large currents as high as 8 A　　Reduces components and footprint　　Highly reliable; can be used in high-temperature environments like automotive applications　　Key data

Key word：

TDK

Release time：2025-05-16 13:45 reading：365 Continue reading>>

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Renesas Partners with Indian Government to Drive Innovation Through Startups and Industry-Academia Collaboration, Strengthening India’s Semiconductor Ecosystem

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodateits growing R&D teams, with the inauguration ceremonies held today. This strategic move underscores Renesas’ commitment to innovation and excellence in India and aims to drive continued growth in the region.　　Renesas and the Centre for Development of Advanced Computing (C-DAC), an autonomous scientific society of MeitY, today signed and exchanged two Memoranda of Understanding (MOUs) under the MeitY Chips to Startup (C2S) programme (Note). These MOUs focus on 1) Supporting local startups by enabling them to drive technological advancement andpromote local manufacturing in alignment with the Make in India initiative; and 2) Enhancing industry-academia collaboration by fostering an innovative, product-focused mindset among students.　　Shri Ashwini Vaishnaw, Minister for Railways, Information & Broadcasting, and Electronics & Information Technology, Government of India; along with Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas; and Rea Callendar, Head of Platform Adoption and Ecosystem Enablement at Altium, which joined forces with Renesas in August 2024, attended the celebration at the Noida office. Hidetoshi Shibata, CEO of Renesas, also joined virtually, underscoring the global significance of this milestone.　　India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas is committed to deepening its partnerships with local companies, startups, and universities, with the target to generate over 10 percent of itsglobal revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025. This growth initiative reinforces Renesas' long-term commitment to India and supports its ambition to become an employer of choice in this dynamic and fast-evolving market.　　"The inauguration of our expanded offices marks a significant milestone for Renesas in India. It reflects our unwavering commitment to innovation, excellence, and the nurturing of local talent. By building products in India, for India and the world, we continue to drive growth and deliver meaningful impact across the Indian market,” said Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas. "We are proud to sign two MOUs under the MeitY C2S programme, focused on advancing research, fostering innovation, and nurturing product-focused engineers. These strategic collaborations align with the Make in India initiative, aiming to strengthen local design and manufacturing capabilities and empower homegrown talent to drive the future of industry."　　MOUs under MeitY C2S programme　　Renesas and C-DAC signed two MOUs to collaborate in the field of VLSI and embedded semiconductor systems, with the aim of supporting local startups and academic institutions to accelerate innovation and foster self-reliance in India’s semiconductor and product ecosystem. The C2S programme encompasses collaboration with over 250 academic institutions and R&D organizations across the country, including IITs, NITs, IIITs, government and private colleges, along with approximately 15 startups, creating a strong ecosystem for indigenous innovation.　　MOU for Startups: Renesas will help strengthen the product engineering capabilities of local startups by providing Renesas development boards and Altium Designer, the leading PCB design software.　　MOU for Academic Institutions: Renesas will support experiential learning by offering development boards, PCB education and training, Altium Designer software, and access to the Altium 365 cloud platform, aiming to empower the next generation of electronics engineers and nurture a community of innovators.　　Opening of new offices in Bengaluru and Noida　　In May, Renesas consolidated and relocated its existing offices in Bengaluru and Noida into new, state-of-the-art office spaces, marking a significant milestone in the company’s growth and expansion in India.　　The new Bengaluru office is Renesas’ largest site in India, encompassing world-class design teams, test labs, and comprehensive facilities to support employees. It brings together approximately 500 team members, including R&D engineers, business teams, and employees from the recently acquired Altium and Part Analytics, creating a unified and collaborative workspace. The facility is designed to leverage India’s rich talent ecosystem to drive the development of innovative products.　　The new Noida office brings the engineering and business teams together to accelerate the delivery of world-class high-performance compute solutions, driving automotive market growth through innovation, collaboration, and consistent execution. This strategic expansion reinforces Renesas’ commitment to investing in top-tier local talent and strengthening its capabilities in R-Car system-on-chip (SoC) solutions. Designed to integrate cutting-edge tools and workflows, the new Noida site will further enhance synergy across the global engineering team and support Renesas’ long-term strategy in this critical domain.　　(Note) Chips to Startup (C2S) programme: An initiative launched by the Indian government in December 2021 to boost semiconductor and display manufacturing in the country. C2S not only aims at developing specialized manpower in VLSI/Embedded System Design domain but also addresses each entity of the electronics value chain via specialized manpower training, creation of reusable IP repository, design of application-oriented Systems/ASICs/FPGAs, and deployment by academia/ R&D organization by way of leveraging the expertise available at Startups/MSMEs. For more details, please visit the C2S programme website.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube and Instagram　　(Remarks). All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.

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Release time：2025-05-14 14:21 reading：473 Continue reading>>

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