ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：264 Continue reading>>
Murata：Mass production begins for 0603M size copper electrode NTC thermistors, ideal for automotive applications
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Murata：Mass production begins for 0603M size copper electrode NTC thermistors, ideal for automotive applications

　　Murata Manufacturing Co., Ltd. (hereinafter “Murata”) has developed 0603M size (0.6 x 0.3 x 0.3 mm) copper electrode NTC thermistors “NCU03XH103F6SRL” and “NCU03XH103F60RL” (hereinafter “this product”) for markets such as the automotive market where there is a demand for high reliability electronic components. This product is an expansion of the NCU series size lineup. Mass production has already begun, and samples can also be provided.　　As advances are being made towards automated driving and IoT integration in the automotive market, circuit boards are being made with an increasingly larger number of electronic components, and in turn, higher component densities. With the increasing sophistication of ADAS*1/telematics technologies*2, there are higher loads on electronic components, amplifying the issue of component overheating. As a result, there is a heightened demand for overheating detection and temperature monitoring technologies.　　We have taken advantage of Murata’s years of processing technology development experience to create a 0603M size (0.6 x 0.3 x 0.3 mm) product that can be used for high reliability applications. Compared to Murata’s existing products (1005M size), this product has an approximately 80% lower volume and approximately 70% smaller mounting area.　　Murata will continue to expand our product lineup to meet market demand. By responding quickly to market demand, we also contribute to further improvements in circuit board component densities and downsizing of devices for high reliability applications.　　*1ADAS: Advanced Driver Assistance System　　*2Telematics technology: Devices that use communications technology installed in vehicles to collect and transmit driver and vehicle data and share information in real time. Main applications of this technology include navigation systems that collect traffic information to help drivers avoid traffic jams and voice recognition services used to operate in-car features.　　Features　　Works with automobiles and other systems that require high reliability components. Downsizing (0603M size) achieved with copper electrodes.　　Approximately 80% lower volume and approximately 70% smaller mounting area than Murata’s existing products (1005M size). Because this product has the same characteristics as our existing products, there is no need to change the circuit board design when replacing an existing product with this product. This product will also help our customers increase their component density and save space on the circuit board.　　Small in volume and capable of fast response.　　Specifications
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Release time：2024-08-28 15:21 reading：862 Continue reading>>
Vodafone Idea inks 4G network pacts worth $1.4 bn; Huawei, ZTE emerge as major gainers at Nokia expense
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Vodafone Idea inks 4G network pacts worth $1.4 bn; Huawei, ZTE emerge as major gainers at Nokia expense

Vodafone Idea Ltd (VIL) has finalised new network equipment supply contracts, with Chinese equipment makers Huawei and ZTEemerging major gainers at the expense of European rivals Nokia and Ericsson as India's largest telco focusses on costs in a bid to realise Rs 14,000 crore worth of annual synergies two years ahead of time.After a tight battle for the overall contract likely worth $1.3-1.4 billion (Rs 9,230-9,940 crore), Finland’s Nokia and Sweden’s Ericsson will collectively meet roughly 65% of Vodafone Idea’s network gear requirements, while the two Chinese vendors will handle the remaining 35%, people familiar with the matter said. Previously, the Europeans met some 80% of the cumulative telecom equipment needs of Vodafone India and Idea Cellular before their merger, which was completed on August 31.The newly-created telco is racing against time to merge its dual network to not just save on costs but also to kick off deepening and expansion of its 4G network and increase capacity as it lags erstwhile market leader Bharti Airtel and latest entrant Reliance Jio, and has consequently been losing subscribers. Vodafone Idea have also said it plans to refarm 2G and 3G spectrum and deploy for 4G. “Vodafone Idea will shortly place purchase orders (POs) with Nokia, Ericsson, Huawei and ZTE for 4G network gear, aggregating roughly $1.3-1.4 billion as nearly 30% of existing equipment will be reused in smaller towns to optimise costs and improve capex efficiency,” one of the people quoted above said.Another person said Vodafone Idea has stepped up gear purchases from Huawei and ZTE as both Chinese network vendors offered more attractive prices and flexibility in payment terms over two to three year-spans unlike Ericsson and Nokia, which had quoted higher rates and sought payments at the point of deployment itself.Nokia and Ericsson though still bagged more circles—nine and eight respectively, to Huawei’s seven and ZTE’s five, all of which were shared with another vendor. Nokia currently provides networks equipment to the combined Vodafone-Idea Cellular entity in 15 circles, followed by Ericsson in 14 circles. Huawei and ZTE supply equipment to VIL in seven and three circles, respectively.In a major win for the Chinese companies, Huawei bagged the latest contracts for both Delhi and Chennai metros, while Ericsson didn’t get a single metro circle. Nokia got Mumbai and Kolkata, and shared the Tamil Nadu circle with Huawei, though it lost out on Chennai. Nokia and Ericsson declined comment while Vodafone Idea, Huawei and ZTE didn’t respond to ET’s emailed queries.Balesh Sharma, chief executive officer of Vodafone Idea, told analysts on Wednesday that the operator had completed its vendor selections for circles and zones. The company, in a presentation, also said it had brought forward by two years to FY21 the annual Rs 14,000-crore run-rate for costs and capex synergies.The latest contracts come as a breather for both Huawei and ZTE who have been facing severe revenue challenges in India due to rapid consolidation in the telecom service provider market, besides facing headwinds in some global markets due to security concerns. Both these vendors have got more circles than previously estimated, due to the mobile phone operator’s focus on keeping costs in check, another person said. "While initially, Vodafone Idea was veering towards the European vendors, Idea’s previous experiences with the Chinese players, especially in terms of running a tight ship, tilted the scales," the person said.The company is facing intense financial pressure. Vodafone Idea posted a loss of Rs 4,974 crore and an earnings before interest, taxes, depreciation and amortisation margin of 8.1% for the quarter ended September, raising concerns about its ability to service debt that has ballooned to more than Rs 1.15 lakh crore.Rohan Dhamija, partner and head of India & Middle East at Analysys Mason, said Vodafone Idea could have thought about giving more circles to fewer vendors to get bigger volume discounts, which would have helped them in financially turbulent times."However, the decision could be driven by the complexity of the two merged networks, hence the need for enrolling specific vendors in specific circles."
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Release time：2018-11-23 00:00 reading：1164 Continue reading>>
<span style='color:red'>IDEA</span> confirms strong European demand for semis
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IDEA confirms strong European demand for semis

　　The latest figures from the International Distribution of Electronics Association (IDEA) show demand for semiconductors from European companies continues to grow strongly, with the UK and Ireland making a significant contribution.　　Orders for semiconductors in the UK and Ireland reached ?167million in the third quarter of 2017, according to IDEA. This represents an increase of 30% compared to the same quarter of 2016. Orders for passive components also showed a 30% increase over the same period, reaching ?36m.　　Aggregating all sales of electronic devices, IDEA says in its latest figures, that UK and Ireland companies ordered ?295m worth of components in the quarter; 26% more than in Q3 2016.　　For Europe as a whole, sales of electronic devices were said to be €2.01billion. While this is a 16% improvement over sales in Q3 2016, sales have declined slightly in all categories since the beginning of 2017.　　IDEA’s editor in chief Gary Kibblewhite said: “Despite Q3 being historically a poor quarter, total components bookings continue to grow in most regions with every region, apart from France, posting a growth of at least 15% in total component bookings over the same quarter last year.　　France still grew, but at a lower rate. However, the continuing gradual drop in the semiconductor book:bill ratio throughout the year could well give us problems for 2018.”
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Release time：2017-11-27 00:00 reading：1320 Continue reading>>
DARPA Calls for Post-Moore Ideas
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DARPA Calls for Post-Moore Ideas

　　It’s “the summer of listening” for Bill Chappell, head of a $200+ million government program seeking ways to revitalize electronics. He doesn’t expect to find a replacement for Moore’s law, but he does hope to “shake things up,” creating a handful of alternatives for advancing semiconductor performance.　　“I don’t think exponential growth on a single variable [such as CMOS scaling] is achievable,” Chappell said in an interview about the Electronics Resurgence Initiative (ERI).　　“The next era we're heading into is about progress in lots of variables…hardware/software co-design, new materials and functional blocks, specialization for each app…We’re not out of ideas at all, this is a wildly interesting time where lots of creativity will make up for the march of scaling,” said Chappell, director of the microsystems group at the Defense Advanced Research Projects Agency (DARPA).　　Many industry executives heard about ERI for the first time at a June meeting Chappell hosted in Austin during the Design Automation Conference. About 60 people attended the meeting from companies including Analog Devices, ARM, Cadence, IBM, Intel, Qualcomm, Synopsys, TSMC and Xilinx.　　“It was an intro to the program for industry leaders who may not have been involved with DARPA,” said Steve Keckler, a vice president of architecture research at Nvidia, who spoke at the event about the GPU designer’s work with the agency.　　“I see ERI as an opportunity to engage a broader set of partners to bring things to market, many who haven’t collaborated with DARPA before,” Keckler said.　　This week DARPA conducted a two-day meeting in San Jose to work with chip experts and help them form partnerships. As many as 300 people attended, representing about 45 companies, 10 defense contractors and numerous universities.　　“This is the start of something with teeth behind it,” Chappell said during a break in the event.　　Earlier, DARPA hosted a meeting with defense contractors in Washington D.C. to spawn their ideas. A team of ERI program managers will package the best concepts into a formal call for proposals in September. DARPA will pick and negotiate contracts on winning projects over the following seven months before funding is released and the hard work begins.
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Release time：2017-07-21 00:00 reading：1133 Continue reading>>

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