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Valeo & <span style='color:red'>ROHM Semiconductor</span> co-develop the next generation of power electronics

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Valeo & ROHM Semiconductor co-develop the next generation of power electronics

　　Valeo, a leading automotive technology company, and ROHM Semiconductor, a major semiconductor and electronic component manufacturer, collaborate to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Silicon Carbide (SiC) molded module TRCDRIVE pack™ to Valeo for future powertrain solutions.　　Valeo is broadening access to efficient, electrified mobility across various vehicle types and markets from the smallest one (ebikes), through the mainstream (passenger cars) to the biggest one (eTrucks). By combining Valeo’s expertise in mechatronics, thermal management and software development with ROHM’s power modules, Valeo drives the power electronics solution forward, contributing to the performance, efficiency, and decarbonization of automotive systems worldwide.　　Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchanges aimed at improving the performance and efficiency of the motor inverter – a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs). By refining power electronics, both companies aim to offer optimized cost/performance by delivering higher energy efficiency, reducing heat generation thanks to an optimized cooling and mechatronic integration, and increasing overall reliability with a SiC packaging.　　“This partnership marks, for Valeo Power Division, a significant step forward in delivering advanced and high-efficient power electronics,” says Xavier DUPONT, Valeo Power Division CEO. “Together, we aim to set new industry standards for high voltage inverters and accelerate the transition towards more efficient and affordable electric mobility.”　　“We are pleased to support Valeo, a renowned automotive supplier, with our power semiconductors. ROHM’s TRCDRIVE pack™ provides high power density, leading to an improved power efficiency. Together, we contribute to the development of highly efficient powertrains by fostering the collaboration with Valeo,” says Wolfram HARNACK, President ROHM Semiconductor GmbH.　　These evolutions are all essential to supporting the growing demand for longer range, faster charging capabilities, and, overall a high-performance and an affordable inverter for BEVs and PHEVs.　　Valeo will start supplying a first series project in early 2026. Valeo and ROHM will contribute to the improvement of efficiency and downsizing of Valeo’s next generation of xEV inverters.　　Background on the TRCDRIVE pack™　　TRCDRIVE pack™ is a trademark for the SiC molded module developed for traction inverter drives. This product features high power density and a unique terminal configuration – solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours. Because SiC enables low-loss power conversion under high voltage conditions, combining Valeo's component technology, casing design and thermal management expertise with ROHM's power module creates a synergistic effect. Through both companies’ collaboration in automotive power electronics, they contribute to achieving a decarbonized society by enhancing the performance and efficiency of the motor inverter.　　More information is available via:　　https://www.rohm.com/news-detail?news-title=2024-06-11_news_trcdrive-pack&defaultGroupId=false　　TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.　　About Valeo　　Valeo is a technology company and partner to all automakers and new mobility players worldwide. Valeo innovates to make mobility safer, smarter and more sustainable. Valeo enjoys technological and industrial leadership in electrification, driving assistance systems, reinvention of the interior experience and lighting everywhere. These four areas, vital to the transformation of mobility, are the Group's growth drivers.　　Valeo in figures: 22 billion euros in sales in 2023 | 109 600 employees, 28 countries, 159 plants, 64 research and development centers and 19 distribution platforms at June 30, 2024.　　https://www.valeo.com/　　Valeo is listed on the Paris stock Exchange.

Key word：

ROHM

Release time：2024-11-29 10:49 reading：406 Continue reading>>

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ROHM Semiconductor R6049YN N-Channel Power MOSFETs

　　ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options. FEATURES　　》Low on-resistance　　》Fast switching　　》Drive circuits can be simple　　》Si technology　　》Enhancement channel mode　　》Through-hole mount　　》Halogen-free mold compound　　》Lead-free plating and RoHS-compliant　　SPECIFICATIONS　　》600V drain-source breakdown voltage　　》±22A or ±49A continuous drain current　　》±147A pulsed drain current　　》82mΩ on-drain-source resistance　　》±30V gate-source voltage　　》4V to 6V gate-source threshold voltage range　　》100μA maximum zero gate voltage drain current　　》±100nA maximum gate-source leakage current　　》49A maximum source current　　》1.5V maximum source-drain voltage　　》1.0Ω typical gate resistance　　》6.5μC typical reverse recovery charge　　》34A typical peak reverse recovery current　　》Typical gate charge　　。65nC total　　。21nC source　　。30nC drain　　》7V typical gate plateau voltage　　》90W or 448W power dissipation　　》Typical capacitance　　。2940pF input　　。100pF output　　。Effective output　　.100pF energy related　　.650pF time related　　》Single pulse avalanche　　。2.8A current　　。208mJ energy　　》Typical time　　。38ns turn-on delay　　。33ns rise　　。91ns turn-off delay　　。19ns fall　　。380ns reverse recovery　　》-55°C to +150°C operating temperature range　　》TO-220AB-3, TO-220FM-3, and TO-247G-3 package options　　INNER CIRCUIT

Key word：

ROHM

Release time：2023-09-25 15:58 reading：2100 Continue reading>>

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Continental acknowledges ROHM Semiconductor with the "Supplier of the Year 2022 Award"

　　Continental Automotive honored ROHM Semiconductor with the "Supplier of the Year 2022 Award" for its particularly exemplary performance. Since 2008, Continental conducts an annual broadbased analysis to identify exceptional contributions in customer satisfaction and at all levels of quality, supply, engagement, and purchasing conditions. This is the sixth time within the last fifteen years that ROHM has received this prestigious award.　　The award ceremony and festive dinner took place on August 2nd, 2023, at the historic Herzogssaal in Regensburg. It was the first onsite event after three years of virtual presentations due to the pandemic.　　“With the “Supplier of the Year” award we emphasize, that we are eager to continue our strong collaboration and shape the technological transformation in the Automotive market earlier together,” said Peter Popp, Head of Automotive Purchasing at Continental during the ceremony.　　"We have a long history with Continental and are delighted to be recognized for our achievements," states Wolfram Harnack, President of ROHM Semiconductor Europe. "ROHM strives to build long-term and sustainable partnerships with its customers and to continuously contribute to their product quality and customer satisfaction,” concludes Harnack.　　Continental and ROHM representatives celebrated together during the award ceremony in Regensburg (from left to right): - Jürgen Braunstetter, Senior Vice President of Supply Chain Management at Continental; Peter Popp, Head of Automotive Purchasing at Continental; Heiko Metzger, Automotive Sales Director at ROHM; Marek Vyskocil, Vice President Purchasing Electronics at Continental; Kai-Uwe Brinkmann, Senior Vice President Purchasing Electronics at Continental; Sebastian Rodemeyer, Global Key Account Manager at ROHM; Nikolai Setzer, CEO at Continental and Wolfram Harnack, President at ROHM Semiconductor Europe.

Key word：

ROHM

Release time：2023-08-18 10:21 reading：2352 Continue reading>>

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AMEYA360:ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

　　ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.　　FEATURES　　Low on-resistance with improving short-circuit ruggedness　　Minimizes switching loss by drastically reducing parasitic capacitance　　Supports 15V Gate-Source voltage, improving application design freedom　　Fast switching speed　　Fast reverse recovery　　Easy to parallel　　Simple to drive　　Silicon Carbide (SiC) technology　　N-Channel transistor polarity　　Single-channel　　Through-hole mounting　　Enhancement mode　　+175°C maximum operating temperature　　AEC-Q101-qualified options available　　Lead-free, RoHS and REACH compliant　　APPLICATIONS　　Automobile　　Switch mode power supplies　　Solar inverters　　DC/DC converters　　Induction heating　　Motor drives　　SPECIFICATIONS　　3 to 7 pins　　-4V to +21V gate-source voltage range, 4.8V threshold　　63nC to 170nC gate-charge range　　26A to 105A continuous drain current range　　13mΩ to 62mΩ on-drain source resistance　　750V or 1.2kV Drain-source breakdown voltage　　11ns to 57ns rise time　　9.6ns to 21ns fall time　　Typical delay time　　4.4ns to 20ns turn-on range　　22ns to 83ns turn-off range　　93W to 312W power dissipation range　　Available packages　　TO-247-4L　　TO-247N-3　　TO-263-7L

Key word：

ROHM,MOSFETs

Release time：2023-03-17 11:59 reading：1632 Continue reading>>

Ameya360:<span style='color:red'>ROHM Semiconductor</span> RLD90QZWx 905nm Invisible Pulsed Laser Diodes

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Ameya360:ROHM Semiconductor RLD90QZWx 905nm Invisible Pulsed Laser Diodes

　　ROHM Semiconductor RLD90QZWx 905nm Invisible Pulsed Laser Diodes feature narrow emission width and high energy conversion efficiency. The narrow emission width helps achieve an impressive detection distance and sensing accuracy. These laser diodes have a unique structure that reduces wavelength fluctuations. The RLD90QZWx 905nm invisible pulsed laser diodes come in industry standard Φ5.6 package. Typical applications include laser range finders, Automatic Guided Vehicles (AGVs), and security applications.　　FEATURES　　905nm wavelength　　Narrow emission width　　High energy conversion efficiency　　Reduced wavelength fluctuations　　Low power consumption　　Industry-standard Φ5.6 package　　APPLICATIONS　　Laser range finders　　Automatic Guided Vehicles (AGVs)　　Security

Key word：

Ameya360,ROHM

Release time：2023-03-09 11:24 reading：2294 Continue reading>>

Ameya360：<span style='color:red'>ROHM Semiconductor</span> BM2P10B1J-EVK-001 Evaluation Board

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Ameya360：ROHM Semiconductor BM2P10B1J-EVK-001 Evaluation Board

　　ROHM Semiconductor BM2P10B1J-EVK-001 Evaluation Board is designed to evaluate the performance of BM2P10B1J PWM-type DC-DC converters for AC-DC supplies. This evaluation board features the BM2P10B1J-Z PWM method DC-DC converter IC built-in 730V MOSFET. The BM2P10B1J-EVK-001 eval board also features a built-in low ON resistor of 1Ω. The low ON resistor and high voltage tolerant 730V MOSFET make designs easy. This evaluation board operates within the 90V to 264V input voltage range and -10°C to 65°C temperature range.　　FEATURES　　Outputs an isolated voltage of 12V from an input of 90VAC to 264VAC　　2A maximum output current　　47Hz to 63Hz input frequency range　　24W maximum output power　　86.5% power supply efficiency　　BM2P10B1J-Z PWM method DC/DC converter IC built-in 730V MOSFET　　1Ω built-in the low ON resistor　　BM2P10B1J provides the optimum system for all products with outlets

Key word：

Ameya360,ROHM,BM2P10B1J-EVK-001

Release time：2023-02-28 14:47 reading：1848 Continue reading>>

model	brand	Quote
BD71847AMWV-E2	ROHM Semiconductor
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model	brand	To snap up
STM32F429IGT6	STMicroelectronics
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IPZ40N04S5L4R8ATMA1	Infineon Technologies
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BU33JA2MNVX-CTL	ROHM Semiconductor

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