ROHM’s New N-channel <span style='color:red'>MOSFET</span>s Offer High Mounting Reliability in Automotive Applications
Trade news

ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications

　　ROHM has released N-channel MOSFETs - RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB - featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.　　The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.　　ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.　　Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.　　Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.　　Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.　　Application Examples◇ Vehicle motors (e.g., doors, seat positioning, power windows)　　◇ LED headlights　　◇ Car infotainment / displays　　◇ Advanced Driver Assistance Systems (ADAS)　　Internet Sales InformationOnline Distributors: DigiKey, Mouser and Farnell　　Pricing: $3.50/unit (samples, excluding tax)　　Availability: Now (OEM quantities)　　The products will be offered at other online distributors as they become available.　　(Sales Launch Date: June 2024)　　Online Distributors　　TerminologyON resistance (Ron)　　The resistance value between the Drain and Source while the MOSFET is ON. The smaller this value is, the lower the (power) loss during conduction.　　N-channel MOSFET　　A type of MOSFET that conducts when a positive voltage is applied to the Gate relative to the Source. N-channel MOSFETs are more widely adopted in the market today due to their lower ON-resistance (RDS(on)) over P-channel variants, facilitating use in a broad range of circuits.　　Split Gate Structure　　A technology that divides the gate of the MOSFET into multiple parts to efficiently regulate the flow of electrons. This ensures fast, reliable operation.　　Wettable Flank Technology　　A technique for plating the sides of the lead frame on bottom electrode packages to improve mounting reliability.　　Gull Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability.
Key word：
Release time：2024-09-24 10:58 reading：610 Continue reading>>
ROHM's 4th Generation SiC <span style='color:red'>MOSFET</span> Bare Chips Adopted in Three EV Models of ZEEKR from Geely
Trade news

ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely

　　ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co., Ltd. - a joint venture between ROHM and Zhenghai Group Co., Ltd. to Viridi E-Mobility Technology (Ningbo) Co., Ltd, a Tier 1 manufacturer under Geely.　　Geely and ROHM have been collaborating since 2018, beginning with technical exchanges, then later forming a strategic partnership focused on SiC power devices in 2021. This led to the integration of ROHM’s SiC MOSFETs into the traction inverters of three models: the ZEEKR X, 009, and 001. In each of these EVs, ROHM’s power solutions centered on SiC MOSFETs play a key role in extending the cruising range and enhancing overall performance.　　ROHM is committed to advancing SiC technology, with plans to launch 5th generation SiC MOSFETs in 2025 while accelerating market introduction of 6th and 7th generation devices. What’s more, by offering SiC in various forms, including bare chips, discrete components, and modules, ROHM is able to promote the widespread adoption of SiC technology, contributing to the creation of a sustainable society.　　ZEEKR Models Equipped with ROHM’s EcoSiC™The ZEEKR X, which features a maximum output exceeding 300kW and cruising range of more than 400km despite being a compact SUV, is attracting attention even outside of China due to its exceptional cost performance. The 009 minivan features an intelligent cockpit and large 140kWh battery, achieving an outstanding maximum cruising range of 822km. And for those looking for superior performance, the flagship model, 001, offers a maximum output of over 400kW from dual motors with a range of over 580km along with a four-wheel independent control system.　　About ZEEKRZEEKR was launched in 2021 as the dedicated EV brand of Geely, a leading Chinese automaker that also owns well-established premium brands such as Volvo Cars and Lotus Cars. The name ZEEKR combines ZE, representing ZERO, the starting point of infinite possibilities, E for innovation in the electric era, and KR, the chemical symbol for krypton, a rare gas that emits light when energized. ZEEKR’s philosophy centers on harmonizing humanity, technology, and nature, aiming to redefine the perception of electric vehicles through innovative designs and technologies. The brand has garnered praise in markets outside of China, including in the US and Europe, for its impressive driving performance and range, with plans to expand sales to Western and Northern Europe.　　Please visit ZEEKR's website for more information: https://zeekrglobal.com/　　Market Background and ROHM’s EcoSiC™In recent years, there has been a push to develop more compact, efficient, lightweight electric systems to expand the adoption of next-generation electric vehicles (xEVs) and achieve environmental goals such as carbon neutrality. For electric vehicles in particular, improving the efficiency of the traction inverter, a key element of the drive system, is crucial for extending the cruising range and reducing the size of the onboard battery, heightening expectations for SiC power devices.　　As the world’s first supplier to begin mass production of SiC MOSFETs in 2010, ROHM continues to lead the industry in SiC device technology development. These devices are now marketed under the EcoSiC™ brand, encompassing a comprehensive lineup that includes bare chips, discrete components, and modules. For more information, please visit the SiC page on ROHM’s website: https://www.rohm.com/products/sic-power-devices 　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Supporting InformationROHM is committed to providing application-level support, including the use of in-house motor testing equipment Additionally, by clicking on the URL below, users can access various supporting contents on ROHM’s website that facilitate the evaluation and introduction of 4th generation SiC MOSFETs, such as SPICE and other design models, simulation circuits for common applications (ROHM Solution Simulator), and evaluation board information.　　https://www.rohm.com/products/sic-power-devices/sic-mosfet#supportInfo
Key word：
Release time：2024-09-03 10:42 reading：650 Continue reading>>
ROHM’s Compact SOT-223-3 600V <span style='color:red'>MOSFET</span>s Contribute to Smaller, Lower Profile Designs for Lighting Power Supplies, Pumps, and Motors
Trade news

ROHM’s Compact SOT-223-3 600V MOSFETs Contribute to Smaller, Lower Profile Designs for Lighting Power Supplies, Pumps, and Motors

　　ROHM has added a lineup of compact 600V Super Junction MOSFETs - the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are ideal for small lighting power supplies, pumps, and motors.　　In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated - spurring the demand for compact MOSFETs that are essential for switching operation.　　Generally, however, it has been difficult to reduce the size of Super Junction MOSFETs while maintaining an optimal balance between high breakdown voltage and low ON resistance. In response, after reviewing the shape of the mounted chip, ROHM was able to develop 5 models in the SOT-223-3 package (6.50mm × 7.00mm × 1.66mm) - providing a smaller, lower profile form factor without compromising the performance of conventional products.　　Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM’s new products reduce area and thickness by 31% and 27% - contributing to smaller, lower profile applications. At the same time, the same land pattern (footprint) as the TO-252 package can be used, enabling mounting on existing circuit boards without modification.　　Offering distinctive features, three of the models optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are ideal for sets requiring low loss, high efficiency operation. The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr), making them well-suited for motors-equipped devices.　　Supporting materials such as application notes, technical documents, and SPICE simulation models for each product are available on ROHM’s website free of charge to enable quick market introduction.　　Going forward, ROHM will continue to expand its Super Junction MOSFET lineup in different packages and even lower ON resistances that contribute to solving social issues such as environmental protection by reducing power consumption in variety devices.　　Product Lineup　　For compact power supplies　　Application Examples        • R6004END4 / R6003KND4 / R6006KND4: Lighting, Air conditioners, Refrigerators, etc.　　• R6002JND4 / R6003JND4: Motors for pumps, fans, copiers, etc.　　Online Sales InformationSales Launch Date: December 2023　　Pricing: $3.0/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser, and Farnell　　The products will be offered at other online distributors as they become available.　　Online Distributors　　For More Information about ROHM’s Super Junction MOSFETVarious resources are available on ROHM's website, including application notes on the SOT-223-3 package and other documents essential for circuit design.　　https://www.rohm.com/support/super-junction-mosfet　　PrestoMOS“Presto” is an Italian musical term meaning “very fast.”　　PrestoMOS is ROHM’s original power MOSFET that maintains the high withstand voltage and low ON resistance of Super Junction MOSFETs while speeding up the reverse recovery time of the built-in diode. Reducing switching losses makes it ideal for a wider range of applications with inverter circuits, such as air conditioners and refrigerators.　　TerminologySuper Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A type of transistor, MOSFETs can be divided by device structure into DMOSFET (Double-diffused MOSFET), planar, and super junction topologies. Super Junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types, featuring lower loss when handling large power.　　trr (Reverse Recovery Time)　　The time it takes for the built-in diode to switch from the ON state to completely OFF. The lower this value is, the smaller the loss during switching.
Key word：
Release time：2024-01-24 13:40 reading：2066 Continue reading>>
ROHM’s New 5-Model Lineup of Low ON Resistance 100V Dual <span style='color:red'>MOSFET</span>s
Trade news

ROHM’s New 5-Model Lineup of Low ON Resistance 100V Dual MOSFETs

　　ROHM has developed dual MOSFETs that integrate two 100V chips in a single package - ideal for fan motor drive applied in communication base stations and industrial equipment. New five-models have been added as part of the HP8KEx/HT8KEx (Nch+Nch) and HP8MEx (Nch+Pch) series.　　Recent years have seen a transition to higher voltages from conventional 12V/24V to 48V systems in communication base stations and industrial equipment, - intending to achieve higher efficiency by reducing current values. In these situations, switching MOSFETs are required a withstand voltage of 100V to account for voltage fluctuations, as 48V power supplies are also used in the fan motors for cooling these applications. However, increasing the breakdown voltage raises ON resistance (RDS(on)) (which is in a trade-off relationship), leading to decreased efficiency, making it difficult to achieve both lower RDS(on) and higher breakdown voltage. Moreover, unlike multiple individual drive MOSFETs normally applied in fan motors -　dual MOSFETs that integrate two chips in one package are increasingly being adopted to save space.　　In response, ROHM developed two new series - the HP8KEx/HT8KEx (Nch+Nch) and the HP8MEx (Nch+Pch) - that combine Nch and Pch MOSFET chips using the latest processes. Both series achieve the industry’s lowest RDS(on) by adopting new backside heat dissipation packages with excellent heat dissipation characteristics. As a result, RDS(on) is reduced by up to 56% compared with standard dual MOSFETs (19.6mΩ for the HSOP8 and 57.0mΩ for the HSMT8 Nch+Nch), contributing to significantly lower set power consumption. At the same time, combining two chips in a single package provides greater space savings by reducing area considerably. For example, replacing two single-chip TO-252 MOSFETs with one HSOP8 decreases footprint by 77%.　　Next, ROHM will continue to expand its dual MOSFET lineup to withstand voltages ideal for industrial equipment while also developing low-noise variants. This is expected to contribute to solving social issues such as environmental protection by saving space and reducing power consumption in various applications.　　Application Examples        - Fan motors for communication base stations　　- Fan motors for factory automation, and other industrial equipment　　- Fan motors for data center servers, etc.　　Combination with a pre-driver IC to achieve the optimal motor drive solutionCombining these products with ROHM’s market-proven pre-driver ICs for single-/3-phase brushless motors make it possible to consider even smaller motors featuring lower consumption and quieter drive. By providing total support for peripheral circuit design that marries the dual-MOSFET series with pre-driver ICs, ROHM can offer the best motor drive solutions for customer needs.　　Solution examples with 100V Dual MOSFETs　　- HT8KE5 (Nch+Nch Dual MOSFET) + BM64070MUV (3-Phase Brushless Motor Pre-Driver IC)　　- HT8KE6 (Nch+Nch Dual MOSFET) + BM64300MUV (3-Phase Brushless Motor Pre-Driver IC) and more
Key word：
Release time：2023-10-19 16:07 reading：1979 Continue reading>>
ROHM Semiconductor R6049YN N-Channel Power <span style='color:red'>MOSFET</span>s
Trade news

ROHM Semiconductor R6049YN N-Channel Power MOSFETs

　　ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.     FEATURES　　》Low on-resistance　　》Fast switching　　》Drive circuits can be simple　　》Si technology　　》Enhancement channel mode　　》Through-hole mount　　》Halogen-free mold compound　　》Lead-free plating and RoHS-compliant　　SPECIFICATIONS　　》600V drain-source breakdown voltage　　》±22A or ±49A continuous drain current　　》±147A pulsed drain current　　》82mΩ on-drain-source resistance　　》±30V gate-source voltage　　》4V to 6V gate-source threshold voltage range　　》100μA maximum zero gate voltage drain current　　》±100nA maximum gate-source leakage current　　》49A maximum source current　　》1.5V maximum source-drain voltage　　》1.0Ω typical gate resistance　　》6.5μC typical reverse recovery charge　　》34A typical peak reverse recovery current　　》Typical gate charge　　。65nC total　　。21nC source　　。30nC drain　　》7V typical gate plateau voltage　　》90W or 448W power dissipation　　》Typical capacitance　　。2940pF input　　。100pF output　　。Effective output　　.100pF energy related　　.650pF time related　　》Single pulse avalanche　　。2.8A current　　。208mJ energy　　》Typical time　　。38ns turn-on delay　　。33ns rise　　。91ns turn-off delay　　。19ns fall　　。380ns reverse recovery　　》-55°C to +150°C operating temperature range　　》TO-220AB-3, TO-220FM-3, and TO-247G-3 package options　　INNER CIRCUIT
Key word：
Release time：2023-09-25 15:58 reading：2064 Continue reading>>
ROHM’s New 600V Super Junction <span style='color:red'>MOSFET</span>s Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time
Trade news

ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time

　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading　　Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time　　Contributes to lower power loss along with fewer man-hours and external parts required for noise suppression in devices equipped with small motors*ROHM July 13th, 2023 study　　Product LineupOnline Sales InformationVideoFeatured Products　　July 13th, 2023　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　PrestoMOS™     ‘Presto’ is an Italian musical term meaning ‘very fast’.　　PrestoMOS™ is ROHM’s original power MOSFET that maintains the high withstand voltage and low ON resistance of Super Junction MOSFETs while speeding up the trr of the built-in diode. Reducing switching losses make it ideal for a wider range of applications with inverter circuits, such as air conditioners and refrigerators.　　*PrestoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples◇ Refrigerators◇ Ventilation fans◇ Fan motorsAlso suitable for a variety of devices equipped with small motors.　　Online Sales InformationSales Launch Date: March 2023　　Online Distributors: DigiKey, Mouser, and Farnell　　Pricing: $3.5/unit (samples, excluding tax)　　Products and evaluation boards will be offered at online distributors as they become available.　　TerminologySuper Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A type of transistor, MOSFETs can be divided by device structure into DMOSFET (Double-diffused MOSFET), planar, and super junction topologies. Super Junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types, while also featuring lower loss when handling large power.　　trr (Reverse Recovery Time)　　The time it takes for the built-in diode to switch from the ON state to completely OFF. The lower this value is, the smaller the loss during switching.　　Lifetime Control　　The time it takes for carriers (holes or electrons) that have moved when voltage is applied to the semiconductor to recombine when the voltage is stopped is called the lifetime, and the technology that makes recombination easier by intentionally creating defects in the semiconductor crystal structure is called lifetime control.
Key word：
Release time：2023-09-15 13:48 reading：2127 Continue reading>>
AMEYA360:ROHM Semiconductor 4th Generation N-Channel SiC Power <span style='color:red'>MOSFET</span>s
Trade news

AMEYA360:ROHM Semiconductor 4th Generation N-Channel SiC Power MOSFETs

　　ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.　　FEATURES　　Low on-resistance with improving short-circuit ruggedness　　Minimizes switching loss by drastically reducing parasitic capacitance　　Supports 15V Gate-Source voltage, improving application design freedom　　Fast switching speed　　Fast reverse recovery　　Easy to parallel　　Simple to drive　　Silicon Carbide (SiC) technology　　N-Channel transistor polarity　　Single-channel　　Through-hole mounting　　Enhancement mode　　+175°C maximum operating temperature　　AEC-Q101-qualified options available　　Lead-free, RoHS and REACH compliant　　APPLICATIONS　　Automobile　　Switch mode power supplies　　Solar inverters　　DC/DC converters　　Induction heating　　Motor drives　　SPECIFICATIONS　　3 to 7 pins　　-4V to +21V gate-source voltage range, 4.8V threshold　　63nC to 170nC gate-charge range　　26A to 105A continuous drain current range　　13mΩ to 62mΩ on-drain source resistance　　750V or 1.2kV Drain-source breakdown voltage　　11ns to 57ns rise time　　9.6ns to 21ns fall time　　Typical delay time　　4.4ns to 20ns turn-on range　　22ns to 83ns turn-off range　　93W to 312W power dissipation range　　Available packages　　TO-247-4L　　TO-247N-3　　TO-263-7L
Key word：
Release time：2023-03-17 11:59 reading：1609 Continue reading>>
AMEYA360:Onsemi NTH4L028N170M1 Silicon Carbide (SiC) <span style='color:red'>MOSFET</span>
Trade news

AMEYA360:Onsemi NTH4L028N170M1 Silicon Carbide (SiC) MOSFET

　　Anson Mae NTH4L028N170M1 Silicon Carbide (SiC) MOSFET optimized for fast switching applications. Anson MOSFET uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak. The series provides optimum performance when driven by a 20V grid drive, but can also be used in conjunction with an 18V grid drive.　　At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.　　The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation and gate noise.　　Characteristic　　Typical value RDS(on) = 28mΩ (VGS = 20V)　　Ultra-low grid charge (QG(tot)=200nC)　　High speed switch with low capacitance (Coss=200pF)　　100% avalanche tested　　These devices are lead free and comply with the RoHS directive　　Application　　UPS　　Dc/DC converter　　Boost converter
Key word：
Release time：2023-02-24 10:41 reading：3273 Continue reading>>
What is the difference between <span style='color:red'>MOSFET</span> and IGB
Trade news

What is the difference between MOSFET and IGB

　　MOS transistor is MOSFET, Chinese full name metal oxide semiconductor field effect transistor, known as gold oxygen half effect transistor is a kind of field effect transistor can be widely used in analog circuits and digital circuits. Because the gate of the FET is isolated by an insulating layer, it is also called an insulating gate FET. Mosfets can be divided into N channel depletion type and enhanced type. There are four major types of P-channel depletion and enhanced. Next, Ameya360 electronic components purchase network will introduce to you!　　IGBT is an insulated gate bipolar transistor. It is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate FETs). It combines the advantages of high input impedance of MOSFET and low on-voltage drop of GTR. The saturation voltage of GTR decreases, the current carrying density is high, but the driving current is high. MOSFET has low driving power and fast switching speed, but large conduction voltage drop and low current carrying density. Igbts combine the advantages of both devices, with lower driving power and reduced saturation voltage. It is very suitable for converter system with DC voltage of 600V and above, such as AC motor, frequency converter, switching power supply, lighting circuit, traction drive and other fields.　　There are many types of MOSFeTs, but the most comparable to IGBTs are power MosFeTs. It is designed to handle significant power levels. They are only used in the "on" or "off" state, making them the most widely used low-voltage switch. Compared to IGBTs, power mosFeTs have faster reversing speed and higher efficiency when operating at low voltages.　　What's more, it can maintain high blocking voltage and high current. This is because most power MOSFET structures are vertical (not planar). Its rated voltage is a direct function of the doping and thickness of the N-epitaxial layer, and its rated current is related to the channel width (the wider the channel, the higher the current). Because of their efficiency, power MosFeTs are used in power supplies, DC/DC converters, and low voltage motor controllers.　　MOSFET and IGBT insulated gate double maximum power tubes and other devices have an insulated silicon structure between the source and gate, and DC current cannot pass through, so the low-frequency behavior drive power is close to zero. However, the grid capacitor Cgs are formed between the grid and the source, so some dynamic drive power is required when the high frequencies are alternately switched on and need to be switched off.　　Due to the large gate capacitance Cgs, low power mosFETs typically have Cgs between 10-100pF for high power insulated gate power devices. Usually between 1-100nF, large dynamic drive power is required. In addition, grid drive power is generally not negligible due to the drain-to-grid Miller capacitor Cdg. Due to the current trailing effect of IGBTs, better immunity is required during downtime and negative voltage drive is required. Mosfets are fast and can be turned off without negative voltage, but when interference is severe, negative voltage off is very good for improving reliability.　　MOSFET is used in switching power supply, ballast, high frequency induction heating, high frequency inverter welding machine, communication power supply and other high frequency power supply, IGBT focuses on welding, inverter, inverter, electroplating power supply, super audio induction heating and other fields.
Key word：
Release time：2023-02-13 11:40 reading：1714 Continue reading>>
Ameya360:Renesas Introduces New Gate Driver IC for IGBTs and SiC <span style='color:red'>MOSFET</span>s Driving EV Inverters
Trade news

Ameya360:Renesas Introduces New Gate Driver IC for IGBTs and SiC MOSFETs Driving EV Inverters

　　TOKYO, Japan — Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced a new gate driver IC that is designed to drive high-voltage power devices such as IGBTs (Insulated Gate Bipolar Transistors) and SiC (Silicon Carbide) MOSFETs for electric vehicle (EV) inverters.　　Gate driver ICs are essential components to EV inverters, providing an interface between the inverter control MCU and the IGBTs and SiC MOSFETs that deliver power to the inverter. They receive control signals from the MCU in the low-voltage domain and transfer these signals to rapidly turn power devices on and off in the high-voltage domain. To accommodate the higher voltages of EV batteries, the RAJ2930004AGM has a built-in 3.75kVrms (kV root mean square) isolator, which is higher than the 2.5kVrms isolator in the previous generation product, and can support power devices with a withstand voltage of up to 1200V. In addition, the new driver IC boasts superior CMTI (Common Mode Transient Immunity) performance at 150 V/ns (nanosecond) or higher, providing reliable communication and increased noise immunity while meeting the high voltages and fast switching speeds required in inverter systems. The new product offers the basic functions of a gate driver in a small SOIC16 package, making it ideal for cost-effective inverter systems.　　New Gate Driver IC for 1200V Power Devices　　The RAJ2930004AGM can be used together with Renesas IGBTs as well as with IGBTs and SiC MOSFETs from other manufacturers. In addition to traction inverters, the gate driver IC is ideal for a wide range of applications that use power semiconductors, such as on-board chargers and DC/DC converters. To help developers bring their products to market quickly, Renesas offers the xEV Inverter Kit solution that combines gate driver ICs with MCUs, IGBTs, and power management ICs, and plans to release a version incorporating the new gate driver IC in the first half of 2023.　　“Renesas is pleased to offer the second-generation gate driver IC for automotive applications with high isolation voltage and superior CMTI performance," said Akira Omichi, Vice President of Renesas' Automotive Analog Application Specific Business Division. “We will continue to drive application development for EVs by offering solutions that minimize power loss and meet high levels of functional safety in our customers’ systems.”　　Key Features of the RAJ2930004AGM Gate Driver IC　　Isolation capabilities　　·Withstand Isolation voltage: 3.75kVrms　　·CMTI (Common Mode Transient Immunity): 150V/ns　　Gate drive capabilities　　·Output peak current: 10A　　Protection/fault detection functions　　·On-chip active Miller clamp　　·Soft turn-off　　·Overcurrent protection (DESAT protection)　　·Under voltage lockout (UVLO)　　·Fault feedback　　Operating temperature range: -40 to 125°C (Tj:150°C max.)　　This product will help increase the adoption of EVs by realizing cost-efficient inverters, thereby minimizing environmental impacts.
Key word：
Release time：2023-01-28 10:54 reading：2009 Continue reading>>

Turn to

/ 2

Popular categories
Semiconductors Circuit Protection Electromechanical Embedded Solutions Connectors, Interconnects Sensors, Transducers Optoelectronics Development Kits Test and Measurement Power Fans, Thermal Management Boxes, Enclosures, Racks Cables, Wires Passive Components Others
  • Week of hot material
  • Material in short supply seckilling
model brand Quote
RB751G-40T2R ROHM Semiconductor
BD71847AMWV-E2 ROHM Semiconductor
CDZVT2R20B ROHM Semiconductor
TL431ACLPR Texas Instruments
MC33074DR2G onsemi
model brand To snap up
BU33JA2MNVX-CTL ROHM Semiconductor
IPZ40N04S5L4R8ATMA1 Infineon Technologies
TPS63050YFFR Texas Instruments
BP3621 ROHM Semiconductor
ESR03EZPJ151 ROHM Semiconductor
STM32F429IGT6 STMicroelectronics
Hot labels
ROHM
IC
Averlogic
Intel
Samsung
IoT
AI
Sensor
Chip
Original authorized brand
More Licensed Brands>>
Information leaderboard
  • Week of ranking
  • Month ranking

About us

Qr code of ameya360 official account

Identify TWO-DIMENSIONAL code, you can pay attention to

AMEYA360 mall (www.ameya360.com) was launched in 2011. Now there are more than 3,500 high-quality suppliers, including 6 million product model data, and more than 1 million component stocks for purchase. Products cover MCU+ memory + power chip +IGBT+MOS tube + op amp + RF Bluetooth + sensor + resistor capacitance inductor + connector and other fields. main business of platform covers spot sales of electronic components, BOM distribution and product supporting materials, providing one-stop purchasing and sales services for our customers.

Please enter the verification code in the image below：

verification code