GigaDevice's Dual-Power Supply SPI NOR <span style='color:red'>Flash</span> for 1.2V SoCs Halves Read Power Consumption
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GigaDevice's Dual-Power Supply SPI NOR Flash for 1.2V SoCs Halves Read Power Consumption

　　GigaDevice, a leading semiconductor company specializing in flash Memory, 32-bit microcontrollers (MCUs), sensors, analog products and solutions, has unveiled the GD25NE series of dual-power supply SPI NOR Flash, designed specifically for 1.2 V system-on-chip (SoC) applications.　　The GD25NE series strengthens GigaDevice's strategic dual-power supply Flash roadmap, providing seamless compatibility with next-generation 1.2 V SoCs and eliminating the need for an external booster circuit. With its higher performance and lower power consumption, the GD25NE series addresses the growing demand for advanced embedded storage, making it an ideal choice for wearable devices, healthcare, IoT, data center and Edge AI applications.　　Combining a 1.8 V core voltage with a 1.2 V I/O interface voltage, GD25NE supports single, dual, quad STR (single transfer rate) and quad DTR (double transfer rate) operation. It achieves high-speed clock frequencies of up to 133 MHz in STR mode and 104 MHz in DTR mode.　　With a typical page program time of 0.15ms and sector erase time of 30ms, the GD25NE series significantly outperforms conventional 1.2 V-only Flash solutions—offering up to 20% faster read performance, over 60% faster program speed, and 30% reduction in erase time. Due to these advances, it makes the GD25NE series an outstanding choice for emerging embedded applications.　　The GD25NE series is engineered with ultra-low power consumption by design, making it ideal for energy-sensitive applications. It features a typical deep power-down current of just 0.2 µA, a Quad I/O DTR read current of 9mA at 104 MHz, and program/erase currents as low as 8 mA. Compared to conventional 1.8 V solutions, the 1.2 V design reduces power consumption by up to 50%. This optimized power architecture not only enhances power efficiency but also simplifies system design while maintaining higher performance.　　“The GD25NE series represents a new class of dual-supply SPI NOR Flash, delivering an optimal balance of high performance and ultra-low power consumption," said Ruwei Su, GigaDevice vice president and general manager of Flash BU, "With significantly reduced power usage, faster read speeds, and enhanced program/erase efficiency, this solution is designed to meet the evolving demands of next-generation 1.2 V SoCs. As part of our ongoing commitment to innovation, we continue to expand our portfolio, providing customers with more efficient, reliable, and future-ready Flash solutions for new leading-edge applications”
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Release time：2025-03-12 10:59 reading：453 Continue reading>>
GigaDevice GD25/55 Serial NOR <span style='color:red'>Flash</span> Automotive-Grade Product Family Certified for ISO 26262 ASIL D
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GigaDevice GD25/55 Serial NOR Flash Automotive-Grade Product Family Certified for ISO 26262 ASIL D

　　GigaDevice, a leading semiconductor company specializing in Flash Memory, 32-bit Microcontrollers (MCUs), Sensors, Analog products and solutions, announced its GD25/55 SPI NOR Flash Automotive-Grade Product Family has received ISO 26262:2018 ASIL D Automotive Functional Safety certification from SGS, the world's leading Testing, Inspection and Certification company. This achievement not only strongly validates the outstanding safety performance and reliability of the GD25/55 SPI NOR Flash product in demanding automotive applications but also further solidifies the company's leadership position in the SPI NOR Flash field.　　With the exponential growth in the number of automotive electronics and electrical components, the demand for safety is becoming increasingly critical. As the internationally recognized standard for automotive functional safety, ISO 26262 aims to reduce the risks associated with automotive electronics and electrical systems and ensure the safety performance of vehicles. Under the ISO 26262 framework, the ASIL (Automotive Safety Integrity Level) classification system divides functional safety into four levels, ranging from A (lowest) to D (highest). Level D represents the highest level of safety, meaning that development processes at this level are subject to the most stringent requirements.　　GigaDevice has always maintained a focus on precision and excellence in the automotive electronics field, with product quality at the core of its business development. In terms of quality management, the company’s automotive-grade Flash aims for a 0 PPM defect rate, continuously driving quality improvements and earning widespread trust from customers. To date, global shipments have surpassed 200 million units. In terms of functional safety, GigaDevice has strengthened its process systems and personnel management, continuously enhancing its functional safety management capabilities. After achieving ISO 26262 ASIL D process certification in 2023, the company’s automotive-grade SPI NOR Flash has now also received ASIL D functional safety certification. This demonstrates that GigaDevice has established a rigorous development process for automotive-grade chips, and based on this foundation, has developed the mature capability to design products that meet functional safety standards.　　The GD25/55 SPI NOR Flash Automotive-Grade Product Family strictly adheres to the AEC-Q100 Grade 1 standard and is manufactured using 55nm/45nm process technology. It supports operating voltages of 3V, 1.8V, and a range from 1.65V to 3.6V, with capacities ranging from 2Mb to 2Gb, fully meeting the code storage requirements of automotive electronics. In terms of read/write performance, it offers single-channel, dual-channel, quad-channel, and octal-channel communication modes, with data throughput rates of up to 400MB/s, ensuring efficient data transmission. The product also boasts 100,000 erase/write cycles and a data retention period of up to 20 years. For enhanced safety, products with capacities of 64Mb and above feature built-in ECC algorithms and CRC check functions, improving reliability and extending the product's lifespan.　　Currently, GD25/55 SPI NOR Flash Automotive-Grade Product Family are widely used by numerous domestic and international automakers and Tier 1 suppliers, serving key automotive electronics applications across a range of fields including In-Vehicle Infotainment, Intelligent Cockpits, Connected Car Systems, Advanced Driver Assistance Systems (ADAS), Autonomous Driving, Battery Management System, Domain Controllers, Central Computing, Central Gateways, and Zone Control Systems.　　Ruwei Su, GigaDevice Vice President and General Manager of Flash BU, stated: “As a critical medium for storing key code in automotive electronics, the functional safety of NOR Flash is essential to ensure the reliability and integrity of data in extreme environments, directly impacting the safety and stable operation of vehicles. GigaDevice GD25/55 SPI NOR Flash Automotive-Grade Product Family has obtained the ISO 26262:2018 ASIL D automotive functional safety certification, which fully demonstrates the company's strong capabilities in automotive-grade chip design. Moving forward, GigaDevice will continue to uphold high standards of automotive functional safety, strictly adhere to relevant process specifications, and provide global customers with more high-quality, highly reliable automotive-grade storage products.”
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Release time：2024-12-17 16:03 reading：907 Continue reading>>
BIWIN Secures Fastest Growing <span style='color:red'>Flash</span> Storage & Manufacturer Brand Title at DT Awards 2023
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BIWIN Secures Fastest Growing Flash Storage & Manufacturer Brand Title at DT Awards 2023

　　BIWIN, a distinguished player in the flash storage industry, clinches the prestigious "Fastest Growing Flash Storage & Manufacturer Brand" award at the 15th Digital Terminal (DT) Awards 2023. The ceremony, held at Hotel The Suryaa in New Delhi, underscores BIWIN's pivotal role in the fiercely competitive Indian ICT sector.　　Accepting the award on behalf of BIWIN, Rajesh Khurana, Country Manager for Consumer Business in India, emphasized BIWIN's commitment to innovation, excellence, and utmost customer satisfaction.　　The DT Awards, recognized as India's premier tech honor, gathered over 250 industry leaders and celebrated achievements across more than 110 categories. BIWIN's triumph in this category is a testament to BIWIN's unwavering dedication to delivering cutting-edge and relevant flash storage solutions to the Indian market. This success is fueled by BIWIN's distinctive design and an unwavering commitment to quality.　　The award not only acknowledges BIWIN's current standing as a key player in the flash storage industry but also propels BIWIN forward as an innovator committed to shaping the digital landscape. BIWIN continues to push boundaries in the flash storage sector, fueled by the recognition bestowed upon them at the 15th DT Awards.　　BIWIN's vision extends beyond this award, focusing on advancing technology solutions to shape the digital future. As a recipient of this esteemed accolade, BIWIN remains dedicated to spearheading innovation and excellence in the dynamic realm of flash storage.　　The Digital Terminal Awards, recognized as a premier accolade in the Indian ICT industry, annually celebrates the contributions of tech brands to the digital landscape. It stands as a testament to BIWIN's commitment to driving innovation and excellence in the ever-evolving tech sector.
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Release time：2024-01-26 13:50 reading：2189 Continue reading>>
Renesas Debuts Its Lowest Power Consumption, Dual-core Bluetooth Low Energy SoC with Integrated <span style='color:red'>Flash</span>
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Renesas Debuts Its Lowest Power Consumption, Dual-core Bluetooth Low Energy SoC with Integrated Flash

　　Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced the DA14592 Bluetooth® Low Energy (LE) System-on-Chip (SoC) representing Renesas’ lowest power consumption and smallest, multi-core (Cortex-M33, Cortex-M0+), Bluetooth LE device. By carefully balancing tradeoffs between on-chip memory (RAM/ROM/Flash) and SoC die size (for cost), the DA14592 is very well suited to a broad range of applications including connected medical, asset tracking, human interface devices, metering, PoS readers and ‘crowd-sourced location’ (CSL) tracking.　　Continuing Renesas’ Bluetooth LE SoC leadership in lowest radio power consumption, the DA14592 utilizes a new low-power mode to offer world-class, 2.3mA radio transmit current at 0dBm and 1.2mA radio receive current. Additionally, it supports an ultra-low hibernation current of only 90nA, extending shelf-life for end-products shipped with ‘battery connected’, and ultra-low active current at 34µA/MHz for products requiring significant application processing.　　From a solution cost perspective, the DA14592 typically only requires 6 external components, offering a best-in-class engineering bill of materials (eBOM). Operating from only a system clock and its highly accurate on-chip RCX, this device removes the need for a sleep mode crystal in the majority of applications. Its reduced eBOM, coupled with the DA14592’s small package (offered in WLCSP: 3.32mm x 2.48mm and FCQFN: 5.1mm x 4.3mm) also presents designers with an attractively small solution footprint. The DA14592 also includes a high-precision, sigma-delta ADC, up to 32 GPIOs and unlike other SoCs in its class, it offers a QSPI supporting external memory (Flash or RAM) expansion for applications requiring extra memory.　　Renesas has integrated all external components required to implement a Bluetooth LE solution into the DA14592MOD module. It offers customers the fastest time-to-market and reduced overall project cost. Emphasis has been placed in the design of this module to ensure maximum design flexibility by comprehensively routing the DA14592’s functions to the outside of the module and using castellated pins for easy/low-cost module attachment during development.　　One key application Renesas is showcasing with the DA14592 and DA14592MOD is ‘Crowd-Sourced’ Locationing, a market projected to reach over US$29B in North America alone by 20311 based on Apple’s AirTag sales alone. Google recently announced plans to offer a Find My Device crowd-sourced locationing network as well. Renesas is committed to providing best-in-class reference designs with industry-leading power, eBOM and solution footprint for both mobile operating systems as soon as Google’s Find My Device network becomes available. These reference designs will not only accelerate tag designs but will also enable manufacturers of products that may be lost or stolen to easily attach the DA14592 to their existing product to render their product globally locatable utilizing billions of smartphones, thereby differentiating their products and enhancing end-customer value. Using the DA14592MOD will also remove the need for worldwide regulatory certifications, reducing development costs and further accelerating time-to-market.　　“The DA14592 and DA14592MOD extend our leadership in Bluetooth LE SoCs with our trademark low power consumption and best-in-class eBOMs,” said Davin Lee, Sr. Vice President and General Manager of the Analog and Connectivity Product Group for Renesas. “In addition, we have listened to our customers and continue to expand our product support by offering reference designs for applications such as crowd-sourced locationing, helping our customers to more easily differentiate their products, delivering premium value while maintaining lowest costs.”　　Winning Combinations　　Renesas has combined the new DA14592 with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including Instrument Panel for Light Electric Vehicles. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.　　Availability　　The DA14592 is in mass production today with the DA14592MOD targeted for world-wide regulatory certifications in 2Q24.
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Release time：2024-01-19 11:13 reading：1992 Continue reading>>
GigaDevice Unveils the Industry's Smallest 128Mb SPI NOR <span style='color:red'>Flash</span> in 3x3x0.4mm FO-USON8 Package
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GigaDevice Unveils the Industry's Smallest 128Mb SPI NOR Flash in 3x3x0.4mm FO-USON8 Package

　　GigaDevice a semiconductor industry leader in flash memory, 32-bit microcontrollers, sensors, and analog technology, announces the launch of the industry’s smallest 128Mb SPI NOR Flash, GD25LE128EXH, in the ultra-compact 3x3x0.4mm FO-USON8 package. With its thickness of only 0.4mm, the GD25LE128EXH offers designers unparalleled flexibility in designing compact applications, making it the ideal code storage unit for IoT, wearables, healthcare, and networking products that demand high functionality and low power consumption.　　As a flagship product of GigaDevice's low power SPI NOR Flash series, the GD25LE128EXH features outstanding performance, with a maximum frequency of 133MHz and a data throughput of up to 532Mbit/s, significantly enhancing system access speed and instant-on capability. Compared to other industry products, the GD25LE128EXH operates at a lower read current of only 6mA when running at 4-channel 133MHz frequency, reducing the power consumption by 45% and effectively extending battery life. The GD25LE128EXH achieves an ultra-small size for 128Mb products by using the new FO-USON8 package, which reduces area by 70% and thickness by 50%, compared to the conventional 6x5x0.8mm WSON8 package typically used for such products. As a result, GD25LE128EXH takes up 85% less space and reduces material cost.　　The 3x3x0.4mm FO-USON8 GD25LE128EXH is also pin compatible with 64Mb and lower capacity 3x4x 0.6mm USON8 products, enabling quick density upgrades to 128Mb without changing the PCB layout.　　"As a leading fabless company, GigaDevice not only advocates for innovative technology, but also applies it in practice," said Mike Chen, Executive Director of GigaDevice Memory Business Unit, " Our new GD25LE128EXH, the industry's first 128Mb SPI NOR Flash in an ultra-small package, with its lower power consumption, perfectly suitable for any battery-powered design. We anticipate an increase in demand for high-density SPI NOR Flash that is small and power-efficient, and we are planning to develop a more comprehensive product portfolio using advanced package technology to address such needs in the near future.”　　The GD25LE128EXH is currently in mass production, please contact our sales and distributors for order information. The 3mmx2mmx0.4mm FO-USON8 GD25LE64E will be expected to provide samples in the end of May, contact our sales to get more details.
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Release time：2024-01-08 14:51 reading：2573 Continue reading>>
GigaDevice Introduces 1.2V SPI NOR <span style='color:red'>Flash</span> Product to Meet Advanced SoCs' Need for ultra-Low Power and High Performance
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GigaDevice Introduces 1.2V SPI NOR Flash Product to Meet Advanced SoCs' Need for ultra-Low Power and High Performance

　　GD25UF series featuring single 1.2V supply offers industry's lowest Active Read power consumption　　GD25UF's 1.2V capability enables a direct interface to SoCs and processors produced on advanced process nodes, reducing their die size and simplifying their power supply architecture　　Nuremberg, Germany – 14 March 2023 – GigaDevice, a semiconductor industry leader in Flash memory and 32-bit microcontrollers serving a broad range of technology innovations, today introduced the GD25UF series of SPI NOR Flash in its strategic roadmap of 1.2V Flash products supporting systems-on-chip (SoCs) and applications processors built on advanced process nodes. The GD25UF SPI NOR Flash products are optimized for applications that require ultra-low power consumption or a small board footprint.　　The GD25UF products operate at a supply-voltage range of 1.14V-1.26V .This is ideal for devices built on advanced process nodes and operating at a core voltage of 1.2V, as it provides for a simpler power system architecture, and for direct interfacing between the I/O pins of the SoC or processor and the GD25UF device.　　With the GD25UF products, GigaDevice provides better specifications than other competing 1.2V products in the parameters that manufacturers of mobile communications devices, wireless modems and wearable devices care most about. In low-power mode at a frequency of up to 50MHz, Active Read current can be as low as 0.4mA at slower frequencies. Deep power-down current of 0.1µA makes the GD25UF ideal for any battery-powered or wearable application. In addition, industry-best program and erase times help increase device manufacturing throughput while reducing system power consumption.　　In Fast Read mode, these Flash devices operate at up to 120MHz and achieve a data-transfer rate of up to 640Mbits/s. In low EMI mode, operating at 80MHz over a double transfer-rate (DTR) quad I/O interface, the GD25UF products achieve the same data-transfer rate of 640Mbits/s while minimizing clock-generated noise, an ideal feature for noise-sensitive wireless applications.　　The 64Mbit GD25UF64E is in production now. It is supplied in SOP8, 3mm x 4mm or 4mm x 4mm USON8 and WLCSP packages, or as a known good die. The 128Mbit GD25UF128E is sampling. Products with memory capacity of 32Mbits and 256Mbits are in development.　　Syed S. Hussain, Flash BU Global Segment Marketing of GigaDevice said: 'Users of chips manufactured at advanced process nodes require a new generation of low-voltage Flash memory products that are optimized for the demanding applications that they support, such as IoT devices, mobile phones, PCs and laptops, and consumer devices, e.g. portable healthcare, smart watch and battery-based devices. Today’s launch of the GD25UF64E 1.2V Flash product marks the start of a comprehensive roadmap of low-voltage Flash products from GigaDevice, providing OEMs with the mix of memory capacities, serial interfaces and security functions that they need for the next generation of system designs. There is a Megatrend, where one shrinks SoCs down to lowest process geometry a must requirement is peripherals needs to support 1.2VIO also. GigaDevice is uniquely positioned to win Ultra-low power and performance megatrend in new designs.'　　GigaDevice will be exhibiting its portfolio of Flash memory and microcontroller products at Embedded World　　Come and visit GigaDevice in person or through LIVESTREAM:　　GigaDevice Booth Hall 3A – 527: Embedded World, March 14 – 16, 2023, Exhibition Center Nuremberg, Germany.　　Conference Presentations:　　Performance, Efficiency and Reliability: GigaDevice's Arm® Cortex®-M33-based MCU Family.　　GigaDevice Flash Journey in Automotive: Flashes Low Voltage Mega-Trend
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Release time：2023-11-01 16:22 reading：1914 Continue reading>>
Samsung cuts NAND flash memory production
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Samsung cuts NAND flash memory production

　　According to semiconductor industry insiders, Samsung Electronics has stepped up NAND flash production cuts and has reduced NAND flash memory production by about 40%. It is expected that the production reduction will reach 50% by the end of 2023.　　According to sources, Samsung has cut NAND flash production by 20% in the first half of 2023. The 50% reduction is expected to last at least one quarter before the end of the year.　　Sources also said that the purpose of Samsung's production reduction is to accelerate the transformation of its process technology to improve its product structure.　　The price of NAND flash memory has risen as Samsung and other manufacturers have drastically cut production or reduced investment. According to the supply chain, Samsung’s 512Gb NAND flash wafer price rose to $1.60 from the previous $1.40. It is expected that the unit price of 512Gb wafers will reach $2 by the end of this year.　　Sources pointed out that as wafer costs increase, the price of flash memory devices such as consumer SSDs and enterprise solutions is rising and is expected to continue to rise before the end of the year.
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Release time：2023-09-14 14:51 reading：3597 Continue reading>>
BIWIN Brings UFS 3.1 <span style='color:red'>Flash</span> Memory Hitting Read Speeds up to 2100 MB/s for Flagship Smartphones
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BIWIN Brings UFS 3.1 Flash Memory Hitting Read Speeds up to 2100 MB/s for Flagship Smartphones

　　Smartphones have become an essential part of our everyday lives. As 5G, innovative sensors, and AI are gathering momentum, the storage market puts higher requirements on smartphones in terms of high-resolution videos and images, apps, and real-time communications. BIWIN brings proven storage solutions for your smartphones, enabling improved responsiveness and smooth user experience.　　Mobile user experience is based on three main factors: SoC, RAM, and flash memory, with memory performance and capacity having a growing impact on user experience.　　To meet the needs of flagship smartphones, BIWIN UFS 3.1 offers write speeds up to 1800 MB/s (4x faster than the previous generation of Universal Flash Storage) and read speeds up to 2100 MB/s. With a capacity up to 256 GB (the 512 GB and 1 TB versions are coming soon), BIWIN UFS 3.1 comes in a dimension of 11.5 x 13.0 x 1.0 mm. In addition, BIWIN UFS 2.2 is compatible with mainstream SoC platforms including MediaTek and Spreadtrum. And BIWIN is the first storage solution provider in China to pass MediaTek certification. BIWIN provides UFS 3.1 + LPDDR4X/5 storage solutions, with the LPDDR5 running at speeds up to 6400 Mbps and boasting a capacity up to 64 Gb.　　Firmware algorithm is the very core of the memory’s high performance and low power consumption. Bolstered by JEDEC standards, BIWIN UFS 3.1 supports Write Booster, Deep Sleep, Performance Throttling Notification, and Host Performance Booster to ensure faster speed and less power consumption. BIWIN UFS 3.1 is engineered to offer better user experience in HD video decoding, program installation and startup, continuous shooting, image loading, large file copy, game loading and more.　　BIWIN storage products have entered the supply chain system of mainstream smart terminal manufacturers. In the future, we will continue to deepen the integration of R&D, packaging and testing, giving full play to our advantages in embedded storage in order to help customers increase the competitiveness of their terminal products.
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Release time：2023-09-01 13:11 reading：3752 Continue reading>>
Qorvo PAC22140 Smart BMS with 32kB <span style='color:red'>Flash</span> & 8kB SRAM
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Qorvo PAC22140 Smart BMS with 32kB Flash & 8kB SRAM

　　Qorvo PAC22140 Smart Battery Monitoring System (BMS) with 32kB Flash and 8kB SRAM monitors 10-series to 20-series Li-ion, Li-polymer, and LiFePO4 battery packs. The PAC22140 integrates a fully programmable 50MHz 32-bit Arm Cortex M0 microcontroller and includes cell balancing, monitoring, and protection for the battery packs.       The module provides access to multiple analog and digital peripherals required to manage high-cell-count battery packs. These include a programmable-gain differential amplifier, a 10-bit SAR ADC, and multiple 16-bit Sigma-Delta ADCs for current and voltage sensing. A single-supply 145V buck DC/DC controller generates a 5V system rail to power the PAC22140, and an integrated charge pump supports the charge and discharge FET drivers.　　Qorvo PAC22140 Smart BMS comes in a 9mm x 9mm, 60-pin QFN package for compact battery-monitoring applications, such as E-transportation, garden tools, power tools, and broad industrial battery management. Supported serial interfaces include UART/SPI and I2C/SMBus.　　FEATURES　　Fully programmable 50MHz Arm Cortex M0 with 32kB flash　　10s to 20s cell monitoring and balancing　　19V to 145V input buck DC/DC　　High voltage charge pump for gate drive　　5V/225mA regulator　　CHG/DSG FET driver　　20s cell balancing FETs (50mA)　　16-bit SD ADC for current sense with differential PGA　　16-bit SD ADC for voltage sense, cell balance　　10-bit SAR ADC for voltage/temp sense　　Programmable 2-level OCP　　9mm x 9mm, 60-pin QFN package with power pad　　-40°C to +105°C ambient temperature range (TA)　　APPLICATIONS　　Garden tools　　Power tools　　E-transportation　　Broad industrial battery management
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Release time：2023-03-31 09:59 reading：2936 Continue reading>>
Micron to buy-out Intel's IM <span style='color:red'>Flash</span>
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Micron to buy-out Intel's IM Flash

　　Micron Technology has announced that it is exercising its right to purchase Intel’s interest in their joint venture, IM Flash Technologies (IM Flash).　　This comes after the announcement that was made back in July 2018 that the two companies had agreed to conclude their joint development of 3D XPoint technology after the completion of the second-generation node.　　"The IM Flash acquisition will enable Micron to accelerate our R&D and optimise our manufacturing plan for 3D XPoint,” said Micron Technology President and CEO Sanjay Mehrotra. “The Utah-based facility provides us with the manufacturing flexibility and highly skilled talent to drive 3D XPoint development and innovation, and to deliver on our emerging technology roadmap.”　　Micron anticipates that the pending acquisition will have no meaningful impact on its financial results and said that it saw no changes to the company’s fiscal 2019 capital expenditures or long-term capital expenditure target.　　Micron said that it expects to pay approximately $1.5billion in cash for the transaction.
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Release time：2019-01-16 00:00 reading：1168 Continue reading>>

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