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SK Chair Sees Memory Shortage Through 2030, Eyes Capacity Doubling and Stronger TSMC, Taiwan Ties

　　As next-gen HBM solutions has become a key focus at COMPUTEX amid surging AI demand, SK Group Chairman Chey Tae-won made a brief visit to the SK hynix booth on June 2 and spoke with the media. According to TechNews, Chey expects supply-demand tightness in the memory market to persist through 2030.　　Notably, he also said SK will make full efforts to expand production under tight supply conditions, targeting a doubling of total wafer capacity over the next five years, the report adds.　　Marking his first appearance at COMPUTEX, Chey noted that Taiwan has a highly complete AI supply chain and a strong partner ecosystem. As SK Group continues to expand its AI business, he stressed the need to deepen collaboration with more Taiwanese companies. Beyond TSMC, he said meetings with firms such as Foxconn and Asus are also part of this visit to better understand ongoing cooperation and explore ways to further strengthen partnerships, according to the report.　　SK hynix and TSMC have a long-standing partnership, particularly in logic die integration as custom HBM solutions become an emerging industry trend. As previously reported by The Chosun Daily, SK hynix is expected to adopt a 10nm-class 6th-generation (1c) DRAM process for the core die in its HBM4E, paired with a logic die built on TSMC’s 3nm node. For HBM4 supplied to NVIDIA this year, the company is said to be using a 10nm-class 5th-generation (1b) DRAM core die alongside a logic die based on TSMC’s 12nm process.　　Jensen Huang’s SK hynix Booth Visit Marks Another COMPUTEX Highlight　　It is also wort noting that NVIDIA CEO Jensen Huang also visited the SK hynix booth at COMPUTEX 2026 on June 2, meeting SK Group Chairman Chey Tae-won for the second consecutive day, following a dinner meeting the previous evening. According to Chosun Biz, after his keynote the day before—where he directly identified SK hynix as a supplier of next-generation HBM4—Huang toured the exhibition floor and reviewed the company’s latest memory products.　　During the visit, Huang joined Chey at the SK hynix booth to examine the showcased portfolio, including HBM4E wafers and chipset samples, which entered sampling at the end of last month, the report says. It also marked the first public unveiling of an HBM4E physical mock-up, according to Chosun Biz.

Key word：

SK

Release time：2026-06-03 10:57 reading：172 Continue reading>>

Trade news

Japan–U.S. NAND Alliance Steps Up Investment as Kioxia–SanDisk Capex Reportedly Rises 40% YoY

　　As South Korea’s memory giants shift focus toward 1c DRAM capacity expansion amid surging demand, Global Economic, citing German tech outlet ComputerBase, reports that the Kioxia–SanDisk alliance is moving fast to reassert its position in the NAND market, capitalizing on an investment gap as Samsung Electronics and SK hynix divert resources toward HBM.　　According to the reports, the U.S.–Japan NAND consortium is expected to execute total capital expenditure of $4.5 billion (about KRW 6.75 trillion) in the current fiscal year, marking a 41% year-on-year increase.　　Notably, a key focus of the alliance would likely be the 10th-generation NAND. Nikkei previously reported that Kioxia plans to begin mass production at its Kitakami site in Iwate Prefecture in 2026. However, given the jump to a 332-layer architecture—up from 218 layers in its 8th-generation devices—the company is expected to repurpose its newly operational Kitakami K2 facility, which began production in September, to support output, according to Nikkei.　　ComputerBase, cited by Global Economic, attributes the strong NAND demand supporting Kioxia–SanDisk’s investment to a structural shift in AI workloads: As AI moves from the training-heavy infrastructure build-out phase to large-scale inference deployment, demand is rising for high-performance, ultra-high-capacity storage.　　At the same time, storage is accounting for a growing share of hyperscaler data center capex, while SSD capacity per GPU is more than doubling year over year, the report notes. As a result, next-gen AI servers are increasingly being designed with tens of terabytes of storage per GPU, driving a sustained surge in NAND demand, the report adds.　　Fewer Layers, Comparable Density　　ZDNet also reports that in its recent earnings briefing, Kioxia identified the launch of 10th-generation BiCS NAND as a key priority for fiscal 2026 (April 2026–March 2027). The report adds that the company applies its proprietary BiCS (Bit Cost Scalable) architecture to its scaling roadmap, with the 10th-generation device delivering 59% higher storage density per unit area and a 33% improvement in data transfer speed compared with the 218-layer generation.　　According to ComputerBase, Kioxia’s stacking approach enables comparable density with fewer layers, translating into meaningful cost advantages. A lower stack height also simplifies vertical etching, reduces high-cost equipment runtime, and helps mitigate wafer warpage defects.　　Based on 3D NAND density estimates cited by Global Economic from ComputerBase, Kioxia / SanDisk BiCS10 is projected to reach 37.6Gb per square millimeter in QLC configuration, which would surpass Samsung Electronics’ upcoming 430-layer V10 TLC architecture at around 28.0Gb.　　Samsung, SK hynix Hold Back　　However, TrendForce indicates that major NAND Flash suppliers will add virtually no new production capacity in 2026, and it seems that South Korean memory players are taking a different approach with Kioxia and SanDisk.　　As highlighted by Global Economic, Samsung Electronics and SK hynix have both adjusted their 10th-generation NAND ramp-up schedules: Samsung has reportedly pushed back its V10 production timeline from the second half of 2025 to 2026, while SK hynix is targeting early 2027 for full-scale production.　　ZDNet also reports that Samsung Electronics had initially planned to begin mass production of its 430-layer 10th-generation NAND this year, but the timeline has been delayed to at least 2027, citing technical complexity and softer demand conditions. The report adds that Samsung is still reviewing investment timing, with no concrete equipment orders confirmed, and that SK hynix faces a similar situation.　　Global Economic notes that if the U.S.–Japan NAND alliance succeeds in lowering cost per terabyte and accelerating QLC enterprise SSD adoption, demand could shift more rapidly toward AI data center storage. Even so, Samsung and SK hynix remain competitive, supported by stable 9th-generation yields and strong enterprise SSD customer bases, the report adds.

Key word：

Kioxia

Release time：2026-06-01 10:45 reading：228 Continue reading>>

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First Intel Wildcat Lake Laptops Near Launch; Reportedly Built on 18A, Taking Aim at Apple’s MacBook Neo

　　The first laptops powered by Intel’s “Wildcat Lake” Core Series 300 processors for the entry-level PC segment are reportedly nearing launch. According to Wccftech, Intel Core Series 3 laptops could hit retail shelves as early as next week, with initial models including 14-inch and 16-inch designs from Honor and ASUS, while more OEMs are expected to follow.　　Chinese media outlet Mydrivers notes that the Honor Notebook X14 2026 Combat Edition will be the first commercially available laptop based on Intel’s Wildcat Lake platform, featuring an Intel Core 5 320 processor. Another Wccftech report notes that the device comes with 16GB of LPDDR5X 7467 MT/s memory, double the capacity of Apple’s MacBook Neo, along with a 512GB SSD. By comparison, the Neo starts at 256GB of storage and tops out at 512GB.　　Intel’s Wildcat Lake Targets AI PCs With Better Battery Life　　The SoC package integrates two dies, with the primary die built on Intel’s 18A node, according to TechPowerUp. This die features a 6-core CPU configuration, NPU 5 delivering 40 TOPS of INT8 performance, and a GPU with up to two Xe3 cores. It also integrates the memory controller and cache pool. Meanwhile, Intel dedicates the second die to I/O functions, the report adds.　　Wccftech notes that Intel’s Core Series 3 emphasizes AI capability and battery efficiency, marking the company’s first hybrid AI-ready Core Series processor. The report adds that the chips are designed for all-day battery life and everyday productivity, offering up to 2.1 times faster creation and productivity performance, up to 64% lower processor power consumption, and up to 2.7 times higher AI GPU performance compared with previous-generation Intel Core 7 150U processors.　　Looking ahead, Wildcat Lake could see broader adoption across future devices. TechPowerUp reports that Google is likely to pair its rumored “Googlebook” laptops with Intel’s latest Core Series 300 “Wildcat Lake” processors. However, Intel is not expected to be the exclusive platform provider, with Qualcomm and MediaTek also said to be among Google’s partners.

Key word：

Intel Wildcat Lake

Release time：2026-05-19 10:42 reading：615 Continue reading>>

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Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification

　　Apple is reportedly weighing the possibility of having some of its core device chips manufactured by Samsung and Intel. According to Bloomberg, citing sources, the company has held preliminary discussions on using the two as alternative production partners for its main processors—potentially providing a second sourcing option alongside its longstanding supplier, TSMC.　　Sources say the company has held early-stage discussions with Intel about leveraging its foundry services, while Apple executives have also visited a Samsung facility under construction in Texas that is expected to produce advanced chips.　　That said, the report notes that neither effort has led to any orders so far. Engagements with both suppliers remain at a preliminary stage, as Apple continues to have reservations about adopting non-TSMC manufacturing technologies.　　One of the key drivers behind Apple’s potential shift is supply constraints at TSMC, according to Bloomberg. As the report notes, Apple executives addressed the issue during the company’s quarterly earnings call last week, indicating that limited chip availability for iPhone and Mac devices is currently weighing on growth.　　In early 2026, Tim Cook identified access to advanced-node manufacturing as the main bottleneck for Apple’s iPhone output, according to CNBC. He noted that production is constrained by limited capacity for the company’s A-series and M-series system-on-chip (SoC) chips, which are fabricated on TSMC’s 3nm process.　　In addition, it also aims to maintain at least two suppliers for key components, allowing Apple to strengthen its negotiating leverage on pricing while reducing the risk of supply disruptions, Bloomberg adds.　　Apple’s Reported Supplier Talks May Open Door for Intel Comeback, Samsung Gains　　Apple’s talks with both companies reportedly began before the most recent supply constraints emerged. As Bloomberg notes, collaborating with Intel could offer an added advantage, potentially strengthening Apple’s ties with the Donald Trump administration. As for Samsung, the report indicates that it has already been working on supplying more peripheral components for Apple’s devices, including power management parts.　　In an August 2025 press release, Apple also announced a partnership with Samsung to co-develop a new chip manufacturing technology at Samsung’s Austin fab. Citing industry sources, Business Korea adds that the chip Samsung is expected to produce will likely be used as an image sensor in future iPhones and other Apple products.　　Separately, industry momentum appears to be building around Intel’s foundry push. According to Commercial Times, major tech firms including Google and Apple are weighing a shift to Intel’s foundry. The report adds that Apple’s M-series chips are evaluating Intel’s 18A-P node.　　Apple’s potential shift could provide a boost to both Samsung and Intel. As the report notes, securing external customers for its foundry business is central to Intel’s turnaround strategy under CEO Lip-Bu Tan. Winning Apple as a client would mark a major milestone for Tan and could help draw in additional business. Samsung, meanwhile, would also stand to gain significantly from an endorsement by Apple.

Key word：

Apple

Release time：2026-05-06 14:44 reading：464 Continue reading>>

NOVOSENSE Launches Next-Generation Isolated <span style='color:red'>CA</span>N Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:

Key word：

NOVOSENSE

Release time：2026-04-24 10:58 reading：726 Continue reading>>

Trade news

Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.

Key word：

Murata

Release time：2026-04-24 10:39 reading：476 Continue reading>>

Trade news

Murata launches vibration sensor device for predictive maintenance capable of detecting high-frequency range up to 20 kHz

　　Murata Manufacturing Co., Ltd. announces the SMD-type vibration sensor device PKGM-210D-R. Mass production has already begun.　　In the factory automation (FA) industry, maintenance has traditionally consisted of scheduled maintenance at fixed intervals and corrective maintenance after failures.　　In recent years, however, predictive maintenance, which detects early signs of failure to prevent unexpected equipment stoppages, has become increasingly important. In rotary machinery such as bearings and motors, component damage or insufficient lubrication generates minute abnormal vibrations in the high-frequency range up to 20 kHz before failures become serious. Measuring such high-frequency vibrations is challenging due to interference from noise, and detection has often relied on the experience of skilled technicians using auditory inspection.　　By combining its long-established piezoelectric ceramic vibration detection technology with advanced circuit packaging expertise, Murata has developed the PKGM-210D-R, capable of detecting vibrations up to 20 kHz, the upper limit of the audible range. This enables detection of subtle high-frequency abnormal vibrations that were previously identified only by human hearing.　　The product supports early prediction of equipment issues, helping to reduce downtime, optimize maintenance timing, extend component life, and minimize excess inventory. In addition, its compact size of 0.20 × 0.20 × 0.14 inches (5.0 × 5.0 × 3.5 mm) allows easy retrofitting to existing equipment or direct integration into motor components.　　Key features:　　Z-axis direction detection up to 20 kHz　　Compact size (0.20 × 0.20 × 0.14 inch / 5.0 × 5.0 × 3.5 mm) for easy retrofit and built-in mounting　　Built-in driver and filter circuits　　Versatile single analog output　　Built-in temperature sensor

Key word：

Murata

Release time：2026-03-19 17:06 reading：713 Continue reading>>

Trade news

TDK extends X2 portfolio with compact 350 V (AC) capacitors for industrial and automotive

　　TDK Corporation (TSE:6762) extends its X2 safety film capacitor portfolio with the new B3292xU/V series,now supporting higher voltages and offering compact lead spacings of 15 mm and 22.5 mm, with capacitance values from 47 nF to 1.8 µF. Rated at 350 V (AC) and robust against peak voltage pulses up to 2.5 kV(IEC 60384-14), the series is designed for interference suppression in demanding, space-constrained industrial and automotive environments in series with the mains. Typical applications are on-board chargers, EV charging systems, PV inverters, energy meters, and capacitive power supplies.　　The entire series is now available with lead spacings from 15 mm to 52.5 mm, covering capacitance values from 47 nF to 20 µF. It passed the THB (temperature, humidity, bias) test at +85 °C, 85% RH, and rated voltage for 1000 h, meeting Grade III, Test Condition B requirements. In addition, the series offers AEC-Q200 compliance, excellent self-healing properties, and a maximum operating temperature of +110 °C, ensuring durability even under severe ambient conditions.　　With their compact dimensions and high DC testing voltage (1505 V for 2 s), the B3292xU/V series provides a balanced solution of performance and size for next-generation industrial drives and automotive power electronics, supporting the growing need for efficient and space-optimized EMI suppression solutions.　　For the B3292xU/V series, TDK offers a range of design tools and SPICE models.　　Main applications　　Capacitive power supplies, energy meters　　Industrial drives　　On-board chargers　　EV charging　　PV inverter　　Main features and benefits　　X2 class for interference (EMI) suppression　　“Across the line” applications　　For connections in series with the mains　　Severe ambient conditions　　Small dimensions　　Good self-healing properties　　AEC-Q200E compliant

Key word：

TDK

Release time：2026-02-27 16:14 reading：738 Continue reading>>

Trade news

Fullhan launches FH8626V300: 2M/3M IP Camera SoC

　　FH8626V300 is a cost-effective and easy to develop 2M/3M IP camera solution. The chip integrates a high-performance ISP module and H.264/JPEG encoder, delivering excellent image processing capability, high encoding quality, and low bitrates.It also incorporates 64MB DDR2 memory and provides a complete set of peripheral interfaces required for IP camera applications, including USB, SDIO, and Ethernet, making it suitable for a wide range of network camera products.FH8626V300 features a high-performance 0.5T NPU, enabling intelligent functions such as smart detection.

Key word：

Fullhan

Release time：2026-02-10 16:49 reading：3620 Continue reading>>

Trade news

MQ771-GL: Fibocom’s Compact Cat.M Module Enters Sampling, Driving Asset Tracking Innovation

　　Fibocom (300638.SZ | 0638.HK), a global leader in wireless communicationmodules and AI solutions, announced that its Cat.Mmodule MQ771-GL has entered the engineering sample stage. Withits ultra-compact size, low power consumption,global frequency coverage, and stable network compatibility,the MQ771-GL offers a cost-effective IoT solution for asset tracking, enablinglong battery life, high reliability, and precise positioning for large-scaleLPWA deployments.　　Dual-Mode Support for FlexibleDeployment　　The MQ771-GL supports 3GPP Release 14Cat.M1 and NB-IoT standards and is compatible with mainstream frequencybands worldwide, making it ideal for LPWA network deployments across NorthAmerica, Europe, Asia, and beyond. This global compatibility ensuresreliable connectivity for asset tracking devices and enables flexible operationeven in complex or challenging environments.　　Compact Size with Ultra-Low Power Consumption　　Leveraging advanced power managementtechnologies, the MQ771-GL supports PSM (Power Saving Mode) and eDRX (extendedDiscontinuous Reception), dramatically extending device battery life. InPSM mode, standby current drops to the microampere (μA) level, cutting powerconsumption by 75% compared with the previous generation — ideal for smartwater meters. In eDRX mode, power usage is reduced by 90%, making itsuitable for gas meters, asset trackers, and other long-term outdoor devices,enabling multi-year operation.　　The module’s 17.7mm × 15.8mm LGA package is compatible with the pin layout of Fibocom’s Cat.1 modules, supportingflexible product iteration. Its compact form factor is well-suited forspace-constrained tracking devices, simplifying integration and deployment.　　Enhanced Performance with Rich InterfaceOptions　　The MQ771-GLsupports MQTT, CoAP, LwM2M and standard interfaces like UART, I2C,and I2S, making it adaptable for diverse asset tracking terminals. Itintegrates Soft GPS for precise real-time positioning and features a hardware-levelsecurity engine for encrypted, secure communications, protecting againstunauthorized access.　　Liu Sunzhi,General Manager of Fibocom’s MTC Business Unit, commented:　　"With the MQ771-GL now entering the engineering sample stage, itsultra-compact, ultra-low-power design is set to lower development barriers forasset tracking terminals and accelerate large-scale IoT connectivity. Movingforward, we will continue to strengthen collaborative innovation with verticalindustries, driving the rapid commercialization of low-power, wide-connectivitysolutions for asset tracking and other IoT applications."

Key word：

Fibocom

Release time：2026-02-06 17:41 reading：1004 Continue reading>>

model	brand	Quote
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
TL431ACLPR	Texas Instruments

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments
STM32F429IGT6	STMicroelectronics

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