Basic knowledge of electronic components purchasing -Ameya360 electronic components purchasing website

Trade news

Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.

Key word：

Panasonic

Release time：2025-11-06 15:35 reading：455 Continue reading>>

Trade news

GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, announced that its GD32F5xx and GD32G5xx Software Test Libraries have received IEC 61508 SC3 (SIL 2/SIL 3) functional safety certification from TÜV Rheinland.　　This milestone expands GigaDevice’s functional safety portfolio, which already includes the GD32H7 and GD32F30x STLs, and now covers a broad range of MCUs with Arm® Cortex®-M7, Cortex®-M4, and Cortex®-M33 cores. Building on this foundation, GigaDevice will continue to deliver high-performance and safety-focused hardware and software solutions for key applications such as industrial control, energy and power, and humanoid robotics.　　With the growing emphasis on safety across industries like industrial automation, functional safety has become a critical consideration in embedded system design. The GD32F5xx and GD32G5xx MCUs, based on the Arm® Cortex®-M33 core, have become key solutions for high-performance applications requiring robust safety measures.　　The GD32F5xx series is optimized for applications in energy and power management, photovoltaic energy storage, and industrial automation, where high precision and reliable control are essential.　　The GD32G5xx series combines excellent processing performance with a wide range of digital and analog interfaces. It is available in compact packages such as 81-pin WLCSP81 (4x4mm), making it ideal for applications in humanoid robotics, digital power systems, charging stations, energy storage inverters, servo motors, and optical communications.　　The GigaDevice STLs monitor GD32F5xx and GD32G5xx MCU modules in real-time to detect hardware faults. If a fault is detected, predefined safety mechanisms will be triggered to ensure the MCU always remains in a safe state, reducing potential risks and enhancing system reliability.　　This certification highlights GigaDevice's deep expertise in functional safety system design and its commitment to meeting the highest international safety standards, reinforcing its position as a trusted provider of secure, high-performance solutions for mission-critical industries.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.

Key word：

GigaDevice

Release time：2025-11-04 17:01 reading：525 Continue reading>>

Trade news

GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, has officially opened its new office in Minato City, Tokyo. This milestone reflects the company's deepening commitment to the Japanese market and marks a significant step in enhancing local customer support, strengthening regional collaboration, and advancing its global development efforts.　　Japan has long served as a vital pillar of GigaDevice's global strategy. Over the years, the company has expanded its local team, refined operation to meet evolving customer needs, and established a responsive professional service system. This new office will further enhance GigaDevice's technical responsiveness and agility, foster closer collaboration with customers, and help accelerate product validation and commercialization in today's fast-changing market landscape.　　Working closely with customers in Japan, GigaDevice has broadened the adoption of its solutions across key application sectors such as industrial, automotive, consumer electronics, and the Internet of Things. At the same time, the company continues to deepen cooperation with local partners in supply chain integration and ecosystem development, offering a comprehensive portfolio of Flash memory, MCU, sensor, and analog solutions that have earned broad market recognition.　　"Japan has always been a vital component of our global strategy," said Jennifer Zhao, GigaDevice Global Business CEO. "We will continue to leverage our global synergy and strengthen local service capabilities to drive product innovation and industry advancement alongside our customers and partners."　　"We greatly value the trust and long-term partnerships we have built with our customers in Japan," added Sam Li, GigaDevice Japan Regional GM, "In a market that's becoming increasingly complex, our goal is to consistently deliver exceptional service and competitive products that meet diverse business needs and create lasting value."　　As one of GigaDevice's key customers, Nidec Corporation has been working closely with the company. Ryuji Omura, Head of Nidec Semiconductor Solutions Center, commented: "GigaDevice's rapid growth and technological innovation, along with its genuine commitment to customers, have built a solid foundation of trust between our companies and made it one of our most valued supplier partners. We look forward to seeing GigaDevice continue to lead the semiconductor industry and contribute to the advancement of society."　　As a global leading fabless supplier, GigaDevice continues to combine global synergy with localized execution. Following the establishment of its global headquarters in Singapore, the company has strengthened its presence across Asia, Europe, and the Americas, building a responsive, demand-driven sales and service network. Looking ahead, GigaDevice will continue to invest in Japan, refining its product offerings, enhancing its service delivery, and expanding its collaborative mechanisms to drive a smarter, more efficient, and sustainable future together with its customers and partners.

Key word：

GigaDevice

Release time：2025-10-21 16:49 reading：581 Continue reading>>

Trade news

TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers

　　TAIYO YUDEN CO., LTD. has commercialized and begun mass production of embeddable multilayer ceramic capacitor (MLCC) that achieves a capacitance of 22-μF in a 1005M size (1.0 x 0.5 mm).　　This ceramic capacitor is an MLCC designed for decoupling applications on IC power lines used in AI servers and other types of information devices.　　Components embedded in a board require high precision in terms of flatness of the external electrodes for connection to the circuit. With respect to this requirement, TAIYO YUDEN has commercialized an embeddable MLCC that achieves a 22-μF capacitance in a 1005M size by enhancing external electrode formation technology and other elemental technologies.　　Mass production of the capacitor began at our Tamamura Plant (Sawa District, Gunma Prefecture) in August 2025. Samples are available for 20 yen per unit.　　Technology Background　　AI servers and other types of devices with advanced information processing capabilities are equipped with ICs that consume extremely large amounts of power. For decoupling purposes in such power supply circuits, small, high-capacity MLCCs are required to handle large currents.　　Additionally, to minimize circuit loss and noise, it is important to route the power supply circuit close to the ICs. Traditional power supply circuits are routed around ICs. But, technological developments are progressing, allowing them to be placed closer, such as on the back of the board or directly under the ICs. Thus, embeddable MLCCs need to be equipped with high-precision external electrodes to connect to the lines.　　To satisfy this need, TAIYO YUDEN has improved its external electrode formation technology and commercialized 1005M-size embeddable MLCC with a capacitance of 22 μF.　　TAIYO YUDEN is continuing to develop new MLCCs with higher capacitance and other distinguishing features.　　■ Application　　Decoupling applications on IC power lines used in AI servers and other types of information devices

Key word：

TAIYO

Release time：2025-10-20 16:40 reading：452 Continue reading>>

Trade news

ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.

Key word：

ROHM

Release time：2025-10-15 11:50 reading：635 Continue reading>>

Trade news

ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

Key word：

ROHM

Release time：2025-09-29 14:53 reading：586 Continue reading>>

Trade news

Renesas Adds Capacitive Touch to Ultra-Low-Power RA0 MCUs

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA0L1 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new devices offer extremely low power consumption and the industry’s best solution for quickly and economically implementing capacitive touch in battery-powered and other consumer electronics, appliances, white goods and industrial system controls.　　Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. With the addition of capacitive touch functionality, RA0L1 devices offer designers the ability to create responsive, attractive, low-power user interfaces at very low cost.　　RA0L1 MCUs deliver industry-leading power consumption of only 2.9mA current in active mode, and 0.92mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0L1 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA. With this feature, current consumption can be reduced by up to 90 percent compared with other solutions.　　Feature Set Optimized for Low Cost　　The RA0L1 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0L1 MCUs also integrate multiple communications interfaces, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 4mm x 4mm 24-pin QFN.　　In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to simplify thermal design by avoiding costly and time-consuming “trimming,” even after the reflow process.　　Renesas Capacitive Touch Leadership　　Renesas provides industry-leading capacitive touch technology, ensuring customers can quickly and cost-effectively implement high-quality touch interfaces in a variety of systems. Its self-capacitance method simplifies waterproof design, offering simpler design and reduced complexity compared to mutual capacitance solutions. Renesas’ multi-frequency measurement meets IEC61000 4-3 Level 4 standards, making it ideal for medical applications that demand robust protection from electromagnetic interference. Renesas also offers specialized development resources for capacitive touch, including the QE for Capacitive Touch that streamlines sensitivity adjustments for capacitive touch buttons, speeding up development.　　“The RA0L1 combines the industry-leading power consumption and cost-effectiveness of our RA0 Series MCUs with our unmatched capacitive touch technology and tools,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “We look forward to the many innovative touch interface solutions that our customers will create using these devices.”　　Key Features of the RA0L1 Group MCUs　　Core: 32MHz Arm Cortex-M23　　Memory: Up to 64KB integrated Code Flash memory and 16KB SRAM　　Extended Temperature Range: Ta -40°C to 125°C　　Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC　　Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs　　Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage　　HMI: Capacitive Touch (up to 24 channels), Controlled Current Drive Port (up to 8)　　Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection　　Security: Unique ID, TRNG, Flash access window, Flash read protection　　Packages: 24-, 32- and 48-pin QFNs, 32-, 48-pin LQFP, 20-pin LSSOP　　The new RA0L1 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration to and from other RA family devices.　　Winning Combinations　　Renesas has combined the new RA0L1 Group MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including the Capacitive Touch Remote Controller. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.　　Availability　　The RA0L1 Group MCUs are available now, along with the FSP software, the RA0L1 Fast Prototyping Board and the RA0L1 Renesas Solution Starter Kit for Cap Touch. Samples and kits can be ordered either on the Renesas website or through AMEYA360.

Key word：

Renesas

Release time：2025-09-18 16:11 reading：727 Continue reading>>

Trade news

Murata Launches Digital Output SMD Pyroelectric Infrared Sensor for Low Power Applications

　　Murata Manufacturing Co., Ltd has launched a digital output SMD pyroelectric infrared sensor, IRS-D200ST00R1, with low power consumption and is already in mass production.　　In recent years, the use of IoT technology in smart homes and smart buildings has increased convenience, safety, and power saving within living spaces and facilities. Because of this, the demand for wireless communication units equipped with human detection functions capable of sensing movement in real time is also increasing to realize more efficient and comfortable environments. One of the key technologies to enable the motion detection function is a pyroelectric infrared sensor. Products which communicate wirelessly require long-term stable operation with reduced battery replacement or charging, thus creating a strong need for pyroelectric infrared sensors that can detect human movement while extending battery life. Additionally, to increase design flexibility inside these products, space-saving measures are essential, driving demand for compact infrared sensors., space-saving measures are essential, driving demand for compact infrared sensors.　　In response, we developed this product using proprietary pyroelectric ceramic technology to achieve low power consumption and a compact size. Even when continuously operating the human detection function, power consumption is kept low, and the sensor includes an interrupt function that activates the microcontroller only when a change is detected, contributing to extended battery life. Furthermore, the compact size enables space-saving, and the adoption of the digital I2C interface simplifies design during development.　　The main features of this product include contributing to overall system power reduction through low power consumption and interrupt functionality, space-saving due to its small and low-profile SMD package, ease of design enabled by built-in amplifier and ADC with digital output (I2C), reduction of false detections and stable operation thanks to high signal-to-noise ratio and EMI noise resistance, Also enabling process cost reduction through reflow compatibility.　　Key specifications are a dual element electrode size of 0.08 × 0.02 inch (2.0 × 0.5 mm), an overall size of 0.24 × 0.24 × 0.10 inch (6.0 × 6.0 × 2.6 mm), typical sensitivity of 19.5 mV, element height of 0.065 inch (1.65 mm), field of view of ±55° horizontal and ±42° vertical, supply voltage from 1.8 to 3.3 V, typical current consumption of 8 µA, and an I2C interface.*

Key word：

Murata

Release time：2025-09-15 14:09 reading：514 Continue reading>>

Trade news

Proudly Made in India: Fibocom & Kaynes Technology Join Forces to Drive IoT Innovation, Policy Compliance, and Local Growth

　　Fibocom,a leading global provider of wireless communication modules and AI solutions,today announced a strategic manufacturing partnership with Kaynes Technology, oneof India’s foremost electronics and semiconductor manufacturing pioneers. Thiscollaboration underscores Fibocom’s commitment to India’s national initiatives,including Make in India and Atmanirbhar Bharat,while addressing the growing demand for locally produced IoT components.　　Equipped withhigh-speed SMT lines, automated testing systems, and precision assemblyequipment, the state-of-the-art facility in Karnataka, Hyderabad, and Gujaratstrengthens Fibocom’s integration into India’s dynamic manufacturing ecosystem.This initiative represents more than capacity expansion — it reflects Fibocom’svision to embrace India, grow with India, and empower the world through India.　　Strategic PolicyAlignment and Market Commitment　　Fibocom’sinvestment in local manufacturing is fully aligned with India’s industrial developmentagenda, supporting technological self-reliance, accelerating time-to-market forIndian OEMs, and delivering long-term value to both domestic and globalcustomers.　　Partnering with India’s ManufacturingLeader　　With decades ofexpertise in precision manufacturing, supply chain integration, and world-classquality systems, Kaynes Technology provides the foundation for this strategicpartnership. Together, Fibocom and Kaynes Technology are advancing India as aglobal force for next-generation connectivity solutions.　　“Kaynes Technologyis proud to join forces with Fibocom to deliver critical IoT componentsmanufactured in India,” said Raghu Panicker, CEO, Kaynes Technology.“This collaboration enables local industries to innovate faster, scale smarter,and compete more effectively on the global stage.”　　Trusted & Proudly Made in India　　Fibocom’s locallyproduced modules are designed to global standards while proudly bearing the'Made in India' mark. This not only enhances trust among Indian OEMs andgovernment stakeholders but also reinforces India’s growing reputation as areliable center for IoT innovation and exports.　　“Thispartnership is a statement of intent — Fibocom is here not just to sell, but tobuild, invest, and grow with India,” said Ragin Kallanmar Thodikai, Country SalesManager, India, Fibocom. “We are proud to contribute to afuture where intelligent connectivity is Madein India and trusted worldwide.“

Key word：

FIbocom

Release time：2025-09-02 15:36 reading：709 Continue reading>>

Trade news

ROHM at electronica India 2025: Power and Analog Devices Contributing to the Evolution of Industrial and E-Mobility applications

　　From September 17th to 19th, ROHM will exhibit at electronica India 2025, South Asia's leading trade fair for electronic components, systems, applications, and solutions, taking place at the Bangalore International Exhibition Centre (BIEC). At booth H3-E25, ROHM will showcase its latest SiC and GaN technologies, featuring reference designs and evaluation systems that address today’s power and thermal challenges in both industrial equipment and automotive drive systems. Additionally, we will also showcase analog solutions such as power ICs for industrial equipment and automotive LED drivers.　　"electronica India 2025 will be the right place to explore real-world applications powered by ROHM’s advanced power semiconductors. With our local design expertise and close cooperation with key players in the Indian market, we are uniquely positioned to support the country’s shift toward more sustainable and efficient electronics," says Makoto Terada, Managing Director, ROHM Semiconductor India.　　Highlights of ROHM’s presence at electronica India 2025 include:　　For Industrial Applications　　・Locally co-developed reference designs, as part of ROHM’s 'Made in India' initiative, emphasizing faster prototyping and region-specific design optimization, which will be unveiled for the first time.　　・A full lineup of GaN reference designs ranging from 45W to 5.5kW, including compact AC adapters, Totem Pole PFC designs, and server power supplies.　　・ROHM’s 2kV SiC MOSFETs, adopted in SEMITRANS® 20 modules by Semikron Danfoss, powering SMA Solar Technology’s Sunny Central FLEX for utility-scale PV and battery systems.　　* SEMITRANS® is a trademark or registered trademark of Semikron Danfoss Elektronik GmbH　　For Automotive and E-Mobility　　・TRCDRIVE pack™, a molded SiC module designed for the traction inverter of EVs.　　・New 2-in-1, 4-in-1 and 6-in-1 molded SiC modules for compact and cost-optimized drive solutions.　　・TO-247 discrete SiC MOSFETs shown through practical 3-phase inverter boards for affordable traction systems.　　More Information　　For additional highlights of ROHM at electronica India 2025, please visit:　　www.rohm.com/electronica-india　　ROHM’s Power Eco Family: Reliable Solutions Across a Wide range of Applications　　ROHM will also feature its Power Eco Family, a branding concept that unites its key power device lines: Each product line will be represented through live demonstrations, adoption cases, and hands-on evaluation tools available at the booth.

Key word：

ROHM

Release time：2025-09-01 15:11 reading：629 Continue reading>>

model	brand	Quote
RB751G-40T2R	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
TL431ACLPR	Texas Instruments
MC33074DR2G	onsemi
CDZVT2R20B	ROHM Semiconductor

model	brand	To snap up
BU33JA2MNVX-CTL	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BP3621	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
TPS63050YFFR	Texas Instruments
ESR03EZPJ151	ROHM Semiconductor

PART	Quantity*	Target Price
	Quantity MOQ: 1	Target Price $ If not sure, you may skip this
remark

Telephone *	Name
Company
Email