Cree Signs $250 Million Deal to Supply ST With SiC Wafers

Release time:2019-01-10
author:Ameya360
source:EE Times
reading:3220

 Cree has signed a multi-year $250 million agreement to produce and supply its Wolfspeed 150-mm silicon-carbide (SiC) bare and epitaxial wafers to STMicroelectronics. The supply agreement is for ST’s silicon-carbide products in the broad automotive and industrial markets.

Jean-Marc Chery, president and CEO of STMicroelectronics, said that ST is the only semiconductor company with automotive-grade silicon carbide in mass production today and that the company wants to press forward to grow its SiC business both in terms of volume and breadth of applications served. As ST had previously stated during an earnings announcement, its aim is to take the lead in a market estimated to be worth more than $3 billion in 2025.

“This agreement with Cree will improve our flexibility, sustain our ambition and plans, and contribute to boosting the pervasion of SiC in automotive and industrial applications," Chery said.

This is the third multi-year agreement that Cree has signed in the past year for its 150-mm silicon-carbide wafers. In February 2018, it announced a $100 million long-term supply agreement for its SiC wafers to Infineon Technologies for product lines including photovoltaic inverters, robotics, charging infrastructure, industrial power supplies, traction, and variable speed drives.

In October 2018, it announced an $85M long-term agreement to produce and supply its SiC wafers to an unnamed “leading power device company.”

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Cree LED CV94A-FGC Standard LEDs
  Cree LED CV94A-FGC Standard LEDs feature an IPx8 water-resistant rating in a PLCC6 package. This PLCC6 package offers an increased package height to ease the manufacturing process. These high-performance tricolor SMT LEDs are designed to work in various applications. The CV94A-FGC standard LEDs feature encapsulation resin that contains UV inhibitors to minimize the effects of long-term exposure to direct sunlight.      This results in stable light output over the life of the LED. The CV94A-FGC standard LEDs feature a 5a moisture sensitivity level, lead-free, and are RoHS compliant. These standard LEDs operate at 2.7V forward voltage and -40°C to 85°C temperature range. The CV94A-FGC standard LEDs are ideally used in full-color video screens, digital billboards, and petrol signs.  FEATURES  9.4mm x 4.2mm x 4mm size  Dominant wavelength:  Red (619nm to 624nm)  Green (520nm to 540nm)  Blue (460nm to 480nm)  Luminous intensity:  Red (1120mcd to 2520mcd)  Green (1800mcd to 4025mcd)  Blue (403mcd to 900mcd)  Water-Resistant (IPx8)*  5a: Moisture sensitivity level  Lead-free  RoHS compliant  SPECIFICATIONS  2.7V forward voltage  Power dissipation:  140mW (red)  126mW (green and blue)  Forward current:  50mA (red)  35mA (green and blue)  100mA peak forward current  5V reverse voltage  110°C junction temperature  -40°C to 85°C operating temperature range  40°C to 100°C storage temperature range  APPLICATIONS  Electronic Signs and Signals (ESS)  Full-color video screen  Digital billboards  Motorway signs  Variable Message Sign (VMS)  Advertising signs  Petrol signs
2023-03-27 11:46 reading:3393
Cree and STMicroelectronics Announce Multi-Year Silicon Carbide Wafer Supply Agreement
2019-01-09 00:00 reading:3680
Cree Buys Infineon's RF Power Biz for $430 Million
  LED and RF chip vendor Cree said it paid about $430 million to acquire Infineon Technologies' RF Power business in a move to bolster the offerings of Cree's Wolfspeed subsidiary in wireless, including faster 4G and 5G networks.  In 2016, Cree struck a deal to sell Wolfspeed to Infineon for $850 million, but the companies called it off last year after the Committee for Foreign Investment in the United States (CFIUS) raised concerns about the deal’s implications for U.S. national security.  Cree (Durham, N.C.) said the acquisition of the Infineon RF Power team and capabilities would complement Wolfspeed with additional technology, design, packaging, manufacturing and customer support. The Infineon RF Power business is a leader in offering transistors and monolithic microwave ICs (MMICs) for wireless infrastructure radio frequency power amplifiers based on both LDMOS and gallium nitride on silicon carbide (GaN-on-SiC) technologies, according to Cree.  "This is a key element of Cree’s growth strategy and positions Wolfspeed to enable faster 4G networks and the revolutionary transition to 5G," said Cree CEO Gregg Lowe, in a press statement.  Reinhard Ploss, CEO of Infineon, said sellign the business would enable Infineon to focus on strategic growth areas while retaining a strong technology portfolio for the wireless market.  The deal includes about 260 employees in California, Arizona, Finland, Sweden, China and South Korea. The deal also includes the main Infineon Power facility in Morgan Hill, Calif., which includes packaging and test operations for LDMOS and GaN-on-SiC.  Infineon said it would support the transaction with a long-term supply agreement for LDMOS wafers and related components out of its fab in Regensburg, Germany, and that it would also supply assembly and test services out of its facility in Melaka, Malaysia.  “We are looking forward to combining our strengths with Cree,” said Gerhard Wolf, vice president and general manager of RF power products at Infineon.
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