Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size
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Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size

　　Murata Manufacturing Co., Ltd. has begun the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm) multilayer ceramic capacitors (MLCC) with a capacitance of 47µF*. The new product line, available in two variants with different temperature characteristics, is designed to advance MLCC miniaturization and enhance customer system performance.　　In recent years, high-performance IT solutions, such as those used in AI servers and data centers, have seen rapid growth. Due to the often high component density demanded by these devices, optimized component placement within limited PCB areas is paramount. As a result, there is increasing demand for capacitors that offer both miniaturization and higher capacitance, along with high reliability under high-temperature conditions caused by heat generated from PCBs and integrated circuits (ICs).　　In response to these requirements, Murata has utilized its proprietary technologies in ceramic dielectric layers and internal electrode miniaturization to facilitate the world’s first mass production of this innovative 47µF product in the compact 0402-inch size. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60%. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22µF product in the same 0402-inch size.　　The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85°C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105°C. The ability to operate in environments up to 105°C, makes the X6S variant well-suited for placement near ICs, thereby contributing to improved device performance and integration. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.　　Murata is committed to advancing miniaturized capacitors with higher capacitance and improved high-temperature reliability to meet evolving market demands. These innovations not only support the ongoing miniaturization and functional enhancement of electronic devices but also contribute to lower material usage and increased production efficiency per unit, ultimately helping reduce power consumption at Murata’s factories and lessen environmental impact.　　For inquiries regarding this product, please contact us.　　Notes　　*Based on Murata research as of July 9, 2025.
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Release time：2025-07-10 14:13 reading：236 Continue reading>>
ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed
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ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

　　ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.　　Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.　　The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.　　As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.　　The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages　　Related Information　　• White Papers　　• Design Model Support Page　　• SiC MOSFET Technical Documentation　　Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.
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Release time：2025-07-10 13:36 reading：242 Continue reading>>
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：265 Continue reading>>
Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
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Release time：2025-07-04 15:04 reading：304 Continue reading>>
Murata Launches World’s First 10µF/50Vdc MLCC in 0805-inch Size for Automotive Applications
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Murata Launches World’s First 10µF/50Vdc MLCC in 0805-inch Size for Automotive Applications

　　Murata Manufacturing Co., Ltd. has announced the new GCM21BE71H106KE02 multilayer ceramic capacitor (MLCC) has entered mass production. The device is the world's first 0805-inch size (2.0 x 1.25 mm) MLCC to offer a capacitance of 10µF with a 50Vdc rating and is specifically engineered for automotive applications*. This cutting-edge product marks a significant advancement in MLCC design, delivering a smaller 0805-inch package while maintaining capacitance, voltage rating, and MLCC reliability.　　Advancements in advanced driver-assistance systems (ADAS) and autonomous driving (AD) technologies necessitate deploying an increased number of integrated circuits (ICs) within vehicle systems. This surge in ICs simultaneously leads to a greater demand for supporting high-capacitance passive components while imposing tighter spatial constraints – as a greater number of capacitors must be accommodated on increasingly crowded automotive printed circuit boards (PCBs).　　Designed for 12V automotive power lines, the GCM21BE71H106KE02 capacitor leverages Murata’s proprietary ceramic material and thinning technologies to help engineers to save PCB space and reduce the overall capacitor count, resulting in smaller, more efficient, and reliable automotive systems. As the first automotive-specific MLCC to achieve a 10µF capacitance with a 50Vdc rating in the compact 0805-inch size the GCM21BE71H106KE02 represents a significant advancement in capacitance efficiency. It offers roughly 2.1 times the capacitance of Murata’s previous 4.7µF/50Vdc product, despite sharing the same physical size. Furthermore, compared to the previous 10µF/50Vdc MLCC in the larger 1206-inch size (3.2 x 1.6 mm), the new MLCC occupies approximately 53% less space, providing substantial space savings for automotive applications.　　Murata will continue to pursue further miniaturization and increased capacitance of MLCCs, while expanding its product lineup to meet the evolving needs of the automotive market. These efforts will support the industry as they look to develop higher-performance and more multifunctional vehicles. In addition, by downsizing electronic components, Murata aims to reduce material usage and improve production efficiency per unit, helping to lower electricity consumption at its manufacturing sites and reduce overall environmental impact.
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Release time：2025-07-04 13:59 reading：326 Continue reading>>
ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
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ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance

　　ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.　　As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.　　The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.　　Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.　　ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.　　Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.　　Application Examples　　• 48V AI server systems and power supply hot-swap circuits in data centers　　• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)　　• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)　　• UPS and emergency power systems (battery backup units)　　Online Sales InformationSales Launch Date: May 2025　　Pricing: $5.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　Applicable Part No: RY7P250BM　　EcoMOS™ BrandEcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　TerminologyHot-Swap Circuit　　A circuit that enables components to be inserted or removed while the system remains powered on.　　It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.　　Power MOSFET　　A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.　　SOA (Safe Operating Area)　　The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.　　Low ON-resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.
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Release time：2025-07-03 14:52 reading：236 Continue reading>>
GigaDevice Anchors Global Headquarters in Singapore to Power Synergy and Impact
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GigaDevice Anchors Global Headquarters in Singapore to Power Synergy and Impact

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today officially opened its global headquarters in Singapore. This strategic move marks a major milestone in GigaDevice's international growth journey, underscoring its commitment to closer customer engagement, building a resilient and agile supply chain, and strengthening its ecosystem and brand presence across key global markets.　　Founded in 2005, GigaDevice has rapidly built a competitive product portfolio and innovative solutions. Its SPI NOR Flash commands the No. 2 global position with a 20.4% market share, and it ranks No. 7 worldwide in the 32-bit general-purpose MCU segment. Serving diverse sectors including industrial, automotive, consumer, and IoT, GigaDevice is recognized for delivering semiconductor solutions with reliability and innovation at its core.　　As global demand for smart, connected technologies accelerates—particularly in industrial automation, automotive electronics, and intelligent edge devices—GigaDevice is sharpening its focus on innovation, supply chain agility, and ecosystem collaboration. The company is positioning itself to meet the evolving needs of international customers and capture opportunities across fast-growing markets.　　"We chose Singapore not just for its strategic location, but for its clarity, consistency, and global ambition," said Jennifer Zhao, GigaDevice Global Business CEO. "This is more than a regional office—it's a collaborative innovation hub where expertise across disciplines and borders comes together to build smarter systems, accelerate execution, and power what's next."　　Singapore's robust infrastructure, pro-innovation environment, and exceptional talent pool have established it as a global premier technology and business hub. Its strong connectivity, transparent regulatory framework, and dedication to digital transformation provide the ideal foundation for companies like GigaDevice to scale globally while maintaining agility and future readiness.　　Functioning alongside GigaDevice's group headquarters in China, the Singapore global headquarters will serve as a central platform to drive global coordination, foster localized product innovation, and deepen collaboration with customers and supply chain partners. From this base, the company aims to expand its presence in international markets and build a more connected, agile, and responsive global ecosystem.
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Release time：2025-06-30 14:57 reading：303 Continue reading>>
ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV
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ROHM's SiC MOSFET Adopted for Mass Production in Toyota's New BEV "bZ5" for the Chinese Market

　　~Integration in traction inverters extends the cruising range and improves performance~　　The power module equipped with ROHM Co., Ltd.'s 4th generation SiC MOSFET bare chip has been adopted in the traction inverter of Toyota Motor Corporation's (hereinafter "Toyota") new crossover BEV "bZ5" for the Chinese market.　　The "bZ5" is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY Co., Ltd. (hereinafter "BTET"), FAW Toyota Motor Co., Ltd. (hereinafter "FAW Toyota"), etc., and was launched by FAW Toyota in June 2025.　　The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM's power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new BEV.　　ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.　　About the "bZ5"　　The "bZ5" is a crossover BEV jointly developed by Toyota, BTET, FAW Toyota, etc., with the concept of "Reboot." It features active and iconic styling and is designed to provide a personal space for young users known as Generation Z. The driving range is 550 km for the lower grade and 630 km (CLTC mode) for the higher grade. Reservations began on April 22, 2025, the day before the opening of the 2025 Shanghai Motor Show, attracting significant attention.　　About HAIMOSIC (SHANGHAI) Co., Ltd.　　HAIMOSIC (SHANGHAI) CO.,LTD. is a Joint venture initiated by Zhenghai Group Co., Ltd. (China) and ROHM Co., Ltd. (Japan). HAIMOSIC is mainly engaged in the R&D, design, manufacturing and sales of the silicon carbide power module, with an estimated annual capacity of 360,000 pieces/year. The total investment of the project is 450 million RMB and the registered capital is 250 million RMB. For more details, please visit HAIMOSIC's website: http://www.haimosic.com/
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Release time：2025-06-23 14:11 reading：320 Continue reading>>
ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity
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ROHM Develops Compact Surface-Mount Near-Infrared LEDs Featuring Industry-Leading* Radiant Intensity

　　ROHM has expanded its portfolio of surface-mount near-infrared (NIR) LEDs with new compact top-view types. They are optimized for applications such as VR/AR devices, industrial optical sensors, and human detection sensors.　　The demand for advanced sensing technologies utilizing near-infrared (NIR) has grown in recent years, particularly in VR/AR equipment and biosensing devices. These technologies are used in applications such as eye tracking, iris recognition, and blood flow/oxygen saturation measurements that require high accuracy. At the same time, miniaturization, energy efficiency, and design flexibility are becoming increasingly important. In industrial equipment, near-infrared LEDs are playing a greater role with the rise of precise printer control and automation systems. In response, ROHM is expanding customer options by developing a lineup of compact packages and wavelengths that offer greater design flexibility, while contributing to higher precision and power savings by achieving high radiant intensity.　　The new lineup consists of six models in three package configurations, including two ultra-compact (1.0mm × 0.6mm), ultra-thin (t=0.2mm) products as part of the PICOLED™ series: SML-P14RW and SML-P14R3W. In addition, there are four variants in the industry-standard (1.6mm × 0.8mm) size, featuring a narrow beam circular lens package (CSL0902RT, CSL0902R3T) and flat lens design that emits light over a wide range (CSL1002RT, CSL1002R3T). Each package is available in two wavelengths, 850nm (860nm for the SML-P14RW) and 940nm, allowing customers various options for their specific application needs. The 850nm wavelength is ideal for phototransistors and camera sensors, making it suitable for high-sensitivity applications such as eye tracking and object detection in VR/AR. At the same time, the 940nm wavelength is less affected by sunlight and does not appear red when emitting light, making it suitable for motion sensors. It is also widely used in biosensing applications such as pulse oximeters to measure blood flow and oxygen saturation (SpO2).　　The light source incorporates an NIR element with an optimized emission layer structure utilizing proprietary technology developed through in-house manufacturing expertise. This has made it possible to achieve industry-leading* radiant intensity in a compact package, which was previously considered difficult. For example, compared to a standard 1006 size product, the SML-P14RW delivers approx. 1.4 times the radiant intensity at the same current. In other words, the SML-P14RW consumes 30% less power to achieve the same radiation intensity. This technology improves sensing accuracy and power savings for the entire system.　　Going forward, ROHM will continue to provide innovative light source solutions that support next-generation sensing technologies, creating new value in the VR/AR and industrial equipment markets, while contributing to the realization of a sustainable society.　　Compact NIR LED Lineup　　*1:Ta=25°C *2:IF=30mA *3:IF=20mA　　ROHM also offers NIR-sensitive phototransistors.　　Application Examples　　• VR/AR licenses (eye tracking, gesture recognition)　　• Pulse oximeters (blood flow/oxygen saturation measurement)　　• Industrial optical sensors (object passage detection, position detection), self-checkout systems (bill/card detection), mobile printers (paper detection)　　• Home appliance remote controls (IR data communication), robot vacuum cleaners (floor detection)　　Terminology　　VR/AR (Virtual Reality/Augmented Reality)　　Virtual reality immerses users in a completely digital environment through small high-resolution monitors or screens within an enclosed space. Augmented reality enhances the real world by overlaying digital content onto a headset or smart glasses, enabling users to interact with 3D images. Collectively, these technologies are sometimes referred to as XR (Cross Reality or Extended Reality).　　Near-Infrared (NIR)　　Refers to light in the wavelength range of 780nm to 1000nm. Primarily used in sensors, communication and measurement applications, it is suitable for high accuracy distance measurement and recognition.　　PICOLED™ Series　　ROHM's ultra-small, ultra-thin chip LEDs designed for compact mobile devices and wearables, developed using a proprietary element manufacturing process.　　Radiant Intensity　　An index representing the strength of energy emitted by a light-emitting device in a specific direction (unit: W/sr). This is an important factor that affects the LED’s output intensity and detection performance on the receiving side.　　Note: DigiKey™, Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies.　　*PICOLED™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time：2025-05-26 14:54 reading：383 Continue reading>>
Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions
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Renesas Extends RZ/A MPU Line-up with RZ/A3M for Cost-Sensitive, Advanced HMI Solutions

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new high-performance microprocessor (MPU) in the RTOS-based RZ/A series that meets the growing demands of advanced human-machine interface (HMI) systems. The new RZ/A3M MPU comes with large SDRAM, SRAM and RTOS support to facilitate the seamless execution of complex tasks and real-time graphical displays. The RZ/A3M drives video and camera output on large LCD panels with resolutions up to 1280x800, addressing the display requirements in next-generation home appliances, industrial and office automation, healthcare devices and building control systems.　　Similar to its existing RZ/A3UL, the RZ/A3M features a 64-bit Arm® Cortex®-A55 core with a maximum operating frequency of 1 GHz and 128 KB (kilobytes) of on-chip SRAM. By integrating high-speed 128MB DDR3L-SDRAM in a single System-in-Package (SiP), the device eliminates the complex task of designing a high-speed signal interface for connecting external memory.　　Reducing System Cost with Built-in Memory and Simplified PCB Design　　The RZ/A3M is designed to reduce system costs and accelerate development. It supports both external NAND and NOR flash via QSPI for data and code storage. Paired with a driver, high-capacity NAND flash offers a cost-effective option for memory expansion. Additionally, the RZ/A3M's BGA package has a unique pin layout with two main rows positioned on the outside edge. This layout simplifies PCB routing and enables a low-cost, dual-layer printed wiring board design, providing significant cost and time savings. This memory integration simplifies PCB design by reducing the routing complexity and minimizing layout constraints.　　“I’m pleased to launch the RZ/A3M, the first RZ product with large built-in memory targeting high-function video/animation HMI performance while keeping overall system costs low,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “In addition, we aim to deliver a highly responsive user experience with high-quality, real-time graphics, and provide the ease of design and cost efficiency to help our customers build advanced HMI solutions quickly.”　　Comprehensive Development Environment　　Renesas offers a comprehensive HMI development environment that includes the Flexible Software Package (FSP), evaluation kits, development tools, and sample software. Graphical user interface (GUI) solutions from partner companies such as LVGL, Crank, SquareLine Studio, and Envox will be available for the RZ/A3M to facilitate rapid HMI graphics development.　　Key Features of RZ/A3M　　Arm Cortex-A55 CPU with a maximum operating frequency of 1GHz　　128KB SRAM with error correction, Built-in 128MB DDR3L SDRAM　　Graphics capabilities: LCD controller supporting resolutions up to 1280x800 (WXGA), parallel RGB and MIPI-DSI (4-lane) interfaces, 2D graphics drawing engine　　Peripheral functions: QSPI interface for serial NOR/NAND flash memory, SPI, I2C, SDHI, USB2.0, I2S, temperature sensor, timer　　Package: 244-pin LFBGA, 17mm x 17mm, 0.8mm pitch　　Renesas’ Comprehensive HMI Solutions　　Renesas offers a wide variety of HMI solutions ranging from the 32-bit RX and RA MCU families to the 64-bit RZ family supporting 4K displays. The RZ/A series, built on RTOS-based MPUs with fast startup, includes the new RZ/A3M, which delivers high-performance HMI capabilities with the same ease of use offered by MCUs using large memory capacity.　　Multi-HMI Winning Combination　　Renesas offers Multi-HMI Solution which combines the new RZ/A3M MPU with numerous compatible devices from its portfolio to offer HMI functions for appliances. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.
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Release time：2025-05-26 14:49 reading：445 Continue reading>>

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