Basic knowledge of electronic components purchasing -Ameya360 electronic components purchasing website

Trade news

Murata develops integrated passive device for Semtech’s SX126X family

　　Murata Manufacturing Co., Ltd. has developed a new integrated passive device (IPD) for use with the Semtech LoRa Connect™ SX126x family, which includes the SX1261, SX1262, and LLCC68 products. Using a proprietary low-temperature co-fired ceramic (LTCC) process, Murata has successfully replaced a series of discrete matching components of the SX1261/2 reference design with a single 2.00mm x 1.25mm size LTCC component.　　The IPD enables SX1261/2 radio designers to optimize for both size and performance using two dedicated parts. The LFB21892MDZ7F957 is optimized for US and European ISM bands, delivering the full output power for the US FCC bands. The LFB21892MDZ7F821 is optimized for Eurocentric designs that need to maximize the efficiency performance.　　“The Murata IPD offers the most efficient development path to realizing the full performance of the SX1261/2, featuring a miniaturized form factor that can significantly reduce board space,” says Arthur Kiang, Product Manager, RF Components, Murata. “The reduction in the number of matching components enables lower material costs and simplifies the design process, leading to shorter lead times. This integration also lowers the probability of soldering and manufacturing issues, as there is only one component to monitor in production.”　　“Semtech’s LoRa Connect™ SX126x family has become the trusted choice for LoRaWAN® networks and long-range IoT connectivity in applications from smart metering to industrial sensing,” says Carlo Tinella, product marketing director of wireless and sensing products at Semtech. “Murata’s IPD solution demonstrates the strength of our LoRa® ecosystem, helping radio engineers accelerate development while optimizing for both miniaturization and regulatory compliance. This partnership streamlines the path from design to deployment for millions of IoT devices being deployed globally.”　　Product samples are currently available, with mass production of the IPD commencing shortly.

Key word：

Murata

Release time：2025-11-28 17:33 reading：259 Continue reading>>

Trade news

Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.

Key word：

Panasonic

Release time：2025-11-06 15:35 reading：455 Continue reading>>

GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland I<span style='color:red'>EC</span> 61508 Functional Safety Certification

Trade news

GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, announced that its GD32F5xx and GD32G5xx Software Test Libraries have received IEC 61508 SC3 (SIL 2/SIL 3) functional safety certification from TÜV Rheinland.　　This milestone expands GigaDevice’s functional safety portfolio, which already includes the GD32H7 and GD32F30x STLs, and now covers a broad range of MCUs with Arm® Cortex®-M7, Cortex®-M4, and Cortex®-M33 cores. Building on this foundation, GigaDevice will continue to deliver high-performance and safety-focused hardware and software solutions for key applications such as industrial control, energy and power, and humanoid robotics.　　With the growing emphasis on safety across industries like industrial automation, functional safety has become a critical consideration in embedded system design. The GD32F5xx and GD32G5xx MCUs, based on the Arm® Cortex®-M33 core, have become key solutions for high-performance applications requiring robust safety measures.　　The GD32F5xx series is optimized for applications in energy and power management, photovoltaic energy storage, and industrial automation, where high precision and reliable control are essential.　　The GD32G5xx series combines excellent processing performance with a wide range of digital and analog interfaces. It is available in compact packages such as 81-pin WLCSP81 (4x4mm), making it ideal for applications in humanoid robotics, digital power systems, charging stations, energy storage inverters, servo motors, and optical communications.　　The GigaDevice STLs monitor GD32F5xx and GD32G5xx MCU modules in real-time to detect hardware faults. If a fault is detected, predefined safety mechanisms will be triggered to ensure the MCU always remains in a safe state, reducing potential risks and enhancing system reliability.　　This certification highlights GigaDevice's deep expertise in functional safety system design and its commitment to meeting the highest international safety standards, reinforcing its position as a trusted provider of secure, high-performance solutions for mission-critical industries.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.

Key word：

GigaDevice

Release time：2025-11-04 17:01 reading：525 Continue reading>>

Trade news

ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

　　ROHM has developed an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras.　　Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision. This has created a growing concern – the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and IR has been a longstanding technical challenge. ROHM has overcome this hurdle by fundamentally redesigning the device structure – successfully developing an SBD that combines low VF with low IR which is ideal for protection applications.　　The RBE01VYM6AFH represents a novel concept: leveraging the low-VF characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low IR that is typically difficult to realize with low VF designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering VF of less than 300mV (at IF=7.5mA even at Ta=-40°C), and an IR of less than 20mA (at VR=3V even at Ta=125°C.) These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation.　　The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm / 0.098inch × 0.055inch) that offers both space efficiency and excellent mountability. This enables support for space-constrained applications such as automotive cameras, industrial equipment, and security systems. The RBE01VYM6AFH is also AEC-Q101 qualified, ensuring suitability as a protection device for next-generation automotive electronics requiring high reliability and long-term stability.　　Going forward, ROHM will focus on expanding its lineup with even smaller packages to address continuing miniaturization demands.　　Key Specifications　　Application Examples　　Image sensor-equipped sets such as ADAS cameras, smart intercoms, security cameras, and home IoT devices.　　Terminology　　Photovoltaic Voltage　　A term commonly used with optical sensors, referring to the voltage produced when exposed to light. In general, the stronger the light intensity or higher the pixel count the greater voltage generated.

Key word：

ROHM

Release time：2025-10-27 16:49 reading：448 Continue reading>>

Trade news

ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.

Key word：

ROHM

Release time：2025-10-15 11:50 reading：634 Continue reading>>

Trade news

Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced that it is supporting efficient power conversion and distribution for the 800 Volt Direct Current power architecture announced by NVIDIA, helping fuel the next wave of smarter, faster AI infrastructure.　　As GPU-driven AI workloads intensify and data center power consumption scales into multi-hundred megawatt territory, modern data centers must adopt power architectures that are both energy optimized and scalable. Wide bandgap semiconductors such as GaN FET switches are quickly emerging as a key solution thanks to their faster switching, lower energy losses, and superior thermal management. Moreover, GaN power devices will enable the development of 800V direct current buses within racks to significantly reduce distribution losses and the need for large bus bars, while still supporting reuse of 48V components via DC/DC step-down converters.　　Renesas’ GaN based power solutions are especially suited for the task, supporting efficient and dense DC/DC power conversion with operating voltages of 48V to as high as 400V, with the option to stack up to 800V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the new DC/DC converters. 　　“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, Senior Vice President and General Manager of Power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”　　Renesas Power Management Leadership　　A world leader in power management ICs, Renesas ships more than 1.5 billion units per year, with increased shipments serving the computing industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of power management devices, delivering unmatched quality and efficiency with exceptional battery life. As a trusted supplier, Renesas has decades of experience designing power management ICs, backed by a dual-source production model, the industry’s most advanced process technology, and a vast network of more than 250 ecosystem partners.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live.

Key word：

Renesas

Release time：2025-10-13 13:29 reading：607 Continue reading>>

Trade news

Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.

Key word：

NOVOSENSE

Release time：2025-10-09 13:53 reading：602 Continue reading>>

Trade news

ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

Key word：

ROHM

Release time：2025-09-29 14:53 reading：585 Continue reading>>

Trade news

Murata Launches Digital Output SMD Pyroelectric Infrared Sensor for Low Power Applications

　　Murata Manufacturing Co., Ltd has launched a digital output SMD pyroelectric infrared sensor, IRS-D200ST00R1, with low power consumption and is already in mass production.　　In recent years, the use of IoT technology in smart homes and smart buildings has increased convenience, safety, and power saving within living spaces and facilities. Because of this, the demand for wireless communication units equipped with human detection functions capable of sensing movement in real time is also increasing to realize more efficient and comfortable environments. One of the key technologies to enable the motion detection function is a pyroelectric infrared sensor. Products which communicate wirelessly require long-term stable operation with reduced battery replacement or charging, thus creating a strong need for pyroelectric infrared sensors that can detect human movement while extending battery life. Additionally, to increase design flexibility inside these products, space-saving measures are essential, driving demand for compact infrared sensors., space-saving measures are essential, driving demand for compact infrared sensors.　　In response, we developed this product using proprietary pyroelectric ceramic technology to achieve low power consumption and a compact size. Even when continuously operating the human detection function, power consumption is kept low, and the sensor includes an interrupt function that activates the microcontroller only when a change is detected, contributing to extended battery life. Furthermore, the compact size enables space-saving, and the adoption of the digital I2C interface simplifies design during development.　　The main features of this product include contributing to overall system power reduction through low power consumption and interrupt functionality, space-saving due to its small and low-profile SMD package, ease of design enabled by built-in amplifier and ADC with digital output (I2C), reduction of false detections and stable operation thanks to high signal-to-noise ratio and EMI noise resistance, Also enabling process cost reduction through reflow compatibility.　　Key specifications are a dual element electrode size of 0.08 × 0.02 inch (2.0 × 0.5 mm), an overall size of 0.24 × 0.24 × 0.10 inch (6.0 × 6.0 × 2.6 mm), typical sensitivity of 19.5 mV, element height of 0.065 inch (1.65 mm), field of view of ±55° horizontal and ±42° vertical, supply voltage from 1.8 to 3.3 V, typical current consumption of 8 µA, and an I2C interface.*

Key word：

Murata

Release time：2025-09-15 14:09 reading：514 Continue reading>>

Trade news

Proudly Made in India: Fibocom & Kaynes Technology Join Forces to Drive IoT Innovation, Policy Compliance, and Local Growth

　　Fibocom,a leading global provider of wireless communication modules and AI solutions,today announced a strategic manufacturing partnership with Kaynes Technology, oneof India’s foremost electronics and semiconductor manufacturing pioneers. Thiscollaboration underscores Fibocom’s commitment to India’s national initiatives,including Make in India and Atmanirbhar Bharat,while addressing the growing demand for locally produced IoT components.　　Equipped withhigh-speed SMT lines, automated testing systems, and precision assemblyequipment, the state-of-the-art facility in Karnataka, Hyderabad, and Gujaratstrengthens Fibocom’s integration into India’s dynamic manufacturing ecosystem.This initiative represents more than capacity expansion — it reflects Fibocom’svision to embrace India, grow with India, and empower the world through India.　　Strategic PolicyAlignment and Market Commitment　　Fibocom’sinvestment in local manufacturing is fully aligned with India’s industrial developmentagenda, supporting technological self-reliance, accelerating time-to-market forIndian OEMs, and delivering long-term value to both domestic and globalcustomers.　　Partnering with India’s ManufacturingLeader　　With decades ofexpertise in precision manufacturing, supply chain integration, and world-classquality systems, Kaynes Technology provides the foundation for this strategicpartnership. Together, Fibocom and Kaynes Technology are advancing India as aglobal force for next-generation connectivity solutions.　　“Kaynes Technologyis proud to join forces with Fibocom to deliver critical IoT componentsmanufactured in India,” said Raghu Panicker, CEO, Kaynes Technology.“This collaboration enables local industries to innovate faster, scale smarter,and compete more effectively on the global stage.”　　Trusted & Proudly Made in India　　Fibocom’s locallyproduced modules are designed to global standards while proudly bearing the'Made in India' mark. This not only enhances trust among Indian OEMs andgovernment stakeholders but also reinforces India’s growing reputation as areliable center for IoT innovation and exports.　　“Thispartnership is a statement of intent — Fibocom is here not just to sell, but tobuild, invest, and grow with India,” said Ragin Kallanmar Thodikai, Country SalesManager, India, Fibocom. “We are proud to contribute to afuture where intelligent connectivity is Madein India and trusted worldwide.“

Key word：

FIbocom

Release time：2025-09-02 15:36 reading：705 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor

model	brand	To snap up
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor

PART	Quantity*	Target Price
	Quantity MOQ: 1	Target Price $ If not sure, you may skip this
remark

Telephone *	Name
Company
Email