英飞凌推出采用Q-DPAK和TOLL封装的全新工业CoolSiC™ MOSFET 650V G2,实现更高的功率密度

Release time:2025-02-27
author:AMEYA360
source:英飞凌
reading:628

  电子行业正在向更加紧凑而强大的系统快速转型。为了支持这一趋势并进一步推动系统层面的创新,英飞凌正在扩展其CoolSiC™ MOSFET 650V单管产品组合,推出了采用Q-DPAK和TOLL封装的两个全新产品系列。

英飞凌推出采用Q-DPAK和TOLL封装的全新工业CoolSiC™ MOSFET 650V G2,实现更高的功率密度

  这两个产品系列采用顶部和底部冷却并基于CoolSiC™ Generation 2(G2)技术,其性能、可靠性和易用性均有显著提高。它们专门用于中高功率开关模式电源(SMPS)开发,包括AI服务器、可再生能源、充电桩、电动交通工具和人形机器人、电视机、驱动器以及固态断路器。

  TOLL封装具有出色的板载热循环(TCoB)能力,可通过减少印刷电路板(PCB)占板面积实现紧凑的系统设计。在用于SMPS时,它还能减少系统级制造成本。TOLL封装现在适用于更多目标应用,使PCB设计者能够进一步降低成本并更好地满足市场需求。

  Q-DPAK封装的推出补充了英飞凌正在开发的新型顶部冷却(TSC)产品,包括CoolMOS™ 8、CoolSiC™、CoolGaN™和OptiMOS™。TSC产品使客户能够以低成本实现出色的稳健性以及更大的功率密度和系统效率,还能将直接散热率提高至95%,通过实现PCB的双面使用更好地管理空间和减少寄生效应。


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