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- 英飞凌推出用于功率MOSFET的新型顶部冷却封装
英飞凌推出用于功率MOSFET的新型顶部冷却封装
Release time：2024-04-16
author：AMEYA360
source：网络
reading：901
英飞凌科技股份公司推出采用 OptiMOS™ MOSFET技术的SSO10T TSC 封装。该封装采用顶部直接冷却技术，具有出色的热性能，可避免热量传入或经过汽车电子控制单元的印刷电路板(PCB)。该封装能够实现简单、紧凑的双面PCB设计，并更大程度地降低未来汽车电源设计的冷却要求和系统成本。因此，SSO10T TSC适用于电动助力转向(EPS)、电子机械制动(EMB)、配电、无刷直流驱动器(BLDC)、安全开关、反向电池和DCDC转换器等应用。
SSO10T TSC的占板面积为5 x 7 mm²，并且基于已确立的行业标准 SSO8(5 x 6 mm²的坚固外壳)。但由于采用了顶部冷却，SSO10 TSC的性能比标准SSO8高出 20%以上，最高可高出50%(具体取决于所使用的热界面(TIM)材料和TIM的厚度)。SSO10T TSC封装被JEDEC列为开放市场产品，能够与开放市场第二供应商的产品进行广泛兼容。因此，该封装可作为未来顶部冷却标准快速、轻松地推出。
SSO10T半导体封装能够实现高度紧凑的PCB设计，减少系统占用空间。它还通过消除通孔降低了冷却设计的成本，进而减少了整体系统成本和设计工作量。同时，该封装还提供高功率密度和高效率，从而支持面向未来的可持续汽车的发展。
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