| EMT18T2R | ||
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| 产品描述：
TRANS 2PNP 12V 0.5A 6EMT
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| 标准包装：1 | ||
| 数据手册： |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| DC Current Gain hFE Max: | 270 at 10 mA at 2 V |
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| Maximum DC Collector Current: | 0.5 A |
| Packaging: | Reel |
| Length: | 1.6 mm |
| Manufacturer: | ROHM Semiconductor |
| Pd - Power Dissipation: | 150 mW |
| Transistor Polarity: | PNP |
| Brand: | ROHM Semiconductor |
| Package / Case: | EMT |
| Collector- Emitter Voltage VCEO Max: | 12 V |
| Height: | 0.5 mm |
| Mounting Style: | SMD/SMT |
| Operating Temperature | 150°C (TJ) |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Supplier Device Package | EMT6 |
| Package / Case | SOT-563, SOT-666 |
| Part Status | Active |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 10mA, 2V |
| Emitter- Base Voltage VEBO: | 6 V |
| Width: | 1.2 mm |
| Collector- Base Voltage VCBO: | 15 V |
| DC Collector/Base Gain hfe Min: | 270 |
| Series: | EMT18 |
| Minimum Operating Temperature: | - 55 C |
| Factory Pack Quantity: | 8000 |
| RoHS: | Details |
| Product Category: | Bipolar Transistors - BJT |
| Gain Bandwidth Product fT: | 260 MHz |
| Configuration: | Dual |
| Maximum Operating Temperature: | + 150 C |
| Frequency - Transition | 260MHz |
| Current - Collector (Ic) (Max) | 500mA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 200mA |
| Transistor Type | 2 PNP (Dual) |
| Power - Max | 150mW |
| Manufacturer | Rohm Semiconductor |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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