英飞凌推出先进的OptiMOS™功率MOSFET,进一步扩大采用PQFN 2x2 mm²封装的MOSFET器件的产品阵容

Release time:2023-08-10
author:AMEYA360
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  小型分立式功率MOSFET在节省空间、降低成本和简化应用设计方面发挥着至关重要的作用。此外,更高的功率密度还能实现灵活的布线并缩小系统的整体尺寸。英飞凌科技近日推出先进的全新OptiMOS™功率MOSFET,进一步扩大其采用PQFN 2x2 mm2封装的功率MOSFET的产品阵容,此举旨在提供功率半导体行业标杆解决方案,在更小的封装尺寸内实现更高的效率和更加优异的性能。新产品广泛适用于各种应用,如服务器、通信、便携式充电器和无线充电器中开关电源(SMPS)里的同步整流等。此外,新产品在无人机中还可应用于小型无刷电机的电子速度控制器等。


  全新的OptiMOS™6 40V功率MOSFET以及OptiMOS™5 25V和30V 功率MOSFET进一步优化了用于高性能设计的成熟OptiMOS™技术。新产品采用超小型PQFN 2x2 mm2封装,具备先进的硅技术、稳定可靠的封装与极低的热阻(RthJC最大值为3.2 K/W)。这些新器件拥有业界极低的导通电阻和业界领先的性能指标(FOMs, QG和QOSS),能够实现出色的动态开关性能。因此,这些具有超低开关损耗和低导通损耗的 MOSFET器件能够保证极佳的能效和功率密度,同时简化散热管理。

英飞凌推出先进的OptiMOS™功率MOSFET,进一步扩大采用PQFN 2x2 mm²封装的MOSFET器件的产品阵容

  OptiMOS™功率开关采用紧凑的PQFN 2x2 mm2封装,能够缩小系统尺寸,让终端用户应用的几何外形变得更加小巧、灵活。通过减少并联需求,这些MOSFET器件提升了系统设计的可靠性,显著降低了占板空间和系统成本。

  供货情况

  全新OptiMOS™6 40V功率MOSFET(ISK057N04LM6)的导通电阻值为5.7 mΩ,OptiMOS™5 25V功率MOSFET(ISK024NE2LM5)和OptiMOS™5 30V功率MOSFET(ISK036N03LM5)的导通电阻值分别为2.4 mΩ和3.6 mΩ,这些MOSFET器件均采用改进的PQFN 2x2 mm2 封装,现已开放订购。

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