英飞凌科技高侧和低侧驱动器设计用于控制MOSFET和IGBT,包括两个非互锁通道。该选择具有650V高、低侧绝缘体上硅 (SOI) 栅极驱动器IC,提供高侧 (2.5A) 和低侧电流 (0.7A) 选项。英飞凌高侧和低侧驱动器具有出色的坚固性和抗噪性,非常适合用于电机驱动器、家用电器、SMPS、电池供电应用和大功率照明。
特性
抗噪性
坚固耐用
应用
电机驱动器
家用电器
SMPS
电池供电应用
大功率照明
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