DRA5114Y0L specifications -Ameya360 electronic components purchase network


DRA5114Y0L

ACTIVE SMini3-F2-B
Product description : TRANS PREBIAS PNP 150MW SMINI3
SPQ：3000
Datasheet : DRA5114Y0L.pdf

Vce Saturation (Max) @ Ib, Ic	250mV @ 500µA, 10mA
Resistor - Base (R1) (Ohms)	10k
Transistor Type	PNP - Pre-Biased
Supplier Device Package	SMini3-F2-B
Online Catalog	PNP Pre-biased Transistors
Family	Transistors (BJT) - Single, Pre-Biased
Current - Collector Cutoff (Max)	500nA
Packaging	Digi-Reel®
Package / Case	SC-85
Power - Max	150mW
Resistor - Emitter Base (R2) (Ohms)	47k
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Mounting Type	Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 10V
RoHS	Lead free / RoHS Compliant

Datasheet： DRA5114Y0L.pdf

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