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| 产品描述：
850 nm ±40° Sensitivity 70 V 50 mA Through Hole NPN Phototransistor - TO-18
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| 标准包装：1000 | ||
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| Width: | 5.5 mm |
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| Light Current: | 0.8 mA |
| Packaging: | Bulk |
| Collector-Emitter Breakdown Voltage: | 70 V |
| Pd - Power Dissipation: | 250 mW |
| Package / Case: | TO-18 |
| Mounting Style: | Through Hole |
| Manufacturer: | Vishay |
| Factory Pack Quantity: | 1000 |
| RoHS: | Details |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Type: | Chip |
| Wavelength: | 850 nm |
| Collector-Emitter Saturation Voltage: | 0.15 V |
| Product: | Phototransistors |
| Maximum On-State Collector Current: | 50 mA |
| Minimum Operating Temperature: | - 40 C |
| Half Intensity Angle Degrees: | 40 deg |
| Height: | 5.2 mm |
| Length: | 5.5 mm |
| Peak Wavelength: | 850 nm |
| Brand: | Vishay Semiconductors |
| Product Category: | Phototransistors |
| Dark Current: | 100 nA |
| Maximum Operating Temperature: | + 125 C |
| ECCN | EAR99 |
| 数据手册： |
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