Basic knowledge of electronic components purchasing -Ameya360 electronic components purchasing website

Trade news

murata：Cutting Edge Ceramic Catalyst Material Cuts Emissions and Eliminates Precious Metal Reliance

　　Murata is pleased to announce a revolutionary ceramic catalyst material designed to reduce the impact of industrial gas exhaust systems. A Chinese manufacture (F-Tech), called Shanghai FT Technology Co., Ltd, makes and sells ceramic catalysts using this material. Unlike traditional catalysts in exhaust treatment systems, this ceramic solution does not contain any precious metals, and it significantly reduces both the consumption of the natural gas used for treatment and CO2 emissions.　　Across a wide range of industrial production processes, exhaust gasses must be treated in order to prevent harmful particulate matter from entering the atmosphere. In many applications, regenerative thermal oxidizers (RTO) are used to decompose, and therefore treat, the exhaust gas by burning it with natural gas, eliminating volatile organic compounds (VOCs), hazardous air pollutants (HAPs) and odorous emissions produced during industrial processes.　　Given the rise in natural gas prices and the urgent need to prioritize global sustainability, industrial production facilities are now more determined than ever to find ways to decrease their fuel consumption and reduce their carbon footprint.　　Built from Murata’s extensive ceramic capacitor knowledge, the catalyst exhibits exceptional heat resistance and can be used to treat highly concentrated exhaust gas. In terms of performance, by installing Murata’s ceramic catalyst into an existing exhaust gas treatment equipment the set temperature can be lowered from around 850°C to 700°C. Through the reduction in the set temperature system, heat loss is reduced and the Self-combustion rate is increased, reducing natural gas consumption by up to 53% (Figure 1).　　Figure 1 - And RTO with the ceramic catalyst can offer a significant reduction in natural gas consumption (Source: Murata)　　Additionally, this change in operational conditions results in a decrease in CO2 emissions originating from natural gas usage, contributing to a decrease in environmental impact, as well as significantly lowering running costs.　　The ceramic material also brings a number of advantages. Primarily, the initial system cost is far more predictable, free from the price fluctuations seen with precious metals. Furthermore, the performance of precious metal catalysts can become compromised when subjected to extremely high temperatures, as the active element can move and group into larger clusters. This process, referred to as sintering, reduces the number and area of active sites and deteriorates the catalyst’s performance. Alternatively, ceramic catalyst materials have active elements dispersed in their crystal structure and do not degrade even in high-temperature operation, leading to an extended lifespan compared to precious metal catalysts.　　In real-world applications at both Murata’s manufacturing and partner sites the ceramic catalyst has had a significant impact on the environmental impact of RTO systems and operating costs, with the installation at Wuxi Murata Electronics Co. achieving full system payback in just 13 months.　　“With Murata’s patented ceramic catalyst material, we have taken our extensive ceramic capacitor knowledge and applied it to another market to create a truly innovative solution,” said Koichi Kawakita, Vice President Manufacturing Group Ceramic Capacitor Business Unit. He continued, “In terms of operation, it can help factory designers and exhaust gas treatment manufacturers achieve significant reductions in natural gas consumption and carbon emissions, while also cutting dependence on precious metals.”　　Production is now underway and engineering samples are available for both the 100cpsi and 200cpsi variants.

Key word：

murata

Release time：2024-04-15 14:05 reading：706 Continue reading>>

Trade news

A World’s First: Murata Enables Better Wi-Fi 6E and Wi-Fi 7 Antenna Design with Cutting-Edge Parasitic Element Coupling Device

　　Murata has announced its new Parasitic Element Coupling Device. This state-of-the-art solution improves antenna efficiency by magnetically coupling the parasitic element with the antenna and is the world's first solution designed for Wi-Fi 6E and Wi-Fi 7 products. For designers of smartphones, tablets, network routers, game consoles, and other compact electronics, it enables them to build more efficient antennas – a key requirement for many modern space-constrained devices.　　To develop products conforming to Wi-Fi 6E and Wi-Fi 7 standards, which utilize high-speed wireless communication, multiple high-performance antennas must be installed in electronic devices to improve communication speed and quality.　　However, as the dimensions of heatsinks and batteries expand, as processors become more advanced, the available space for mounting antennas tends to decrease.　　Consequently, there is a need for smaller antennas. But there is a technical limitation, in that the efficiency of wide-band antennas decreases when they are miniaturized. Therefore, designers need a solution that achieves both miniaturization and high performance.　　Murata’s solution is a parasitic element coupling device, made with its multilayer technology as a four-terminal surface-mount component of just 1.0 x 0.5 x 0.35mm.　　Murata’s parasitic element coupling device connects the feeding antenna* to its parasitic elements more effectively than is possible through free space. It acts as a tiny coupling device whose compact size enables strong coupling performance without the use of magnetic materials, which would be inappropriate at the targeted operating frequencies. One side of the coupling device is connected, at very low insertion loss, between a device’s RF circuitry and its main antenna. The other side is connected between the ground and the parasitic element. The resultant, more direct coupling enables the resonance characteristics of the parasitic element to be added to those of the feeding antenna. As a result, it enables more efficient operation across a broader frequency range or on multiple discrete bands.　　The device helps to combat that when an antenna is made smaller, the coupling between it and the parasitic elements is reduced, while the coupling between the parasitic elements and the ground is increased. By sustaining the coupling between the feeding antenna and parasitic element, parasitic element coupling device enables designers to use miniaturized antenna design methods without impacting the communication band of efficiency.　　The feeding antenna can cause an impedance mismatch when used over a wide band, leading to a degradation in wireless performance. In addition, when an antenna with a mismatched impedance is connected to a communication circuit using a long cable, the long cable can promote the impedance mismatch, causing larger insertion loss than expected and significantly reducing wireless communication performance. By using the device, you can improve antenna matching and reduce performance degradation in wireless communications even when using long cables.

Key word：

Murata

Release time：2023-12-13 14:15 reading：2563 Continue reading>>

Trade news

What is a light emitting diode? What are the types of light emitting diode?

　　Light-Emitting Diodes (LEDs) are semiconductor devices that produce light when electricity passes through them. They operate on electroluminescence, emitting efficient, durable, and long-lasting illumination.　　Known for their energy efficiency and small size, LEDs find widespread use in lighting, displays, and indicators across industries. Their diverse color range, durability, and environmental friendliness make them pivotal in modern lighting solutions, from household lighting to advanced technological applications.　　LEDs continue to drive innovation in illumination, offering versatility, longevity, and reduced energy consumption, reshaping how we light our world. In this article, we will introduce about Light-Emitting Diodes.　　What is a light emitting diode?A light-emitting diode (LED) is a semiconductor device that emits light when an electric current passes through it. It works on the principle of electroluminescence, where the movement of electrons within the semiconductor material releases energy in the form of photons (light).　　What are the types of light emitting diode?Light-emitting diodes (LEDs) come in various types, each designed for specific applications or to offer different functionalities. Here are some common types of LEDs:　　Through-Hole LEDs: These are traditional LEDs with two wire leads, often used for indicator lights on electronic devices. They can emit different colors such as red, green, blue, yellow, and others.　　Surface-Mount LEDs (SMD LEDs): These LEDs are smaller and more suitable for automated assembly processes. They come in various sizes, from standard packages like 1206, 0805, 0603 to smaller miniaturized versions.　　High-Power LEDs: These LEDs produce higher levels of light output and are used in applications requiring intense illumination, such as outdoor lighting, spotlights, automotive lighting, and industrial lighting.　　RGB LEDs: These contain red, green, and blue elements within the same package, allowing them to emit a wide range of colors. By adjusting the intensity of each color, they can produce a spectrum of hues.　　UV (Ultraviolet) LEDs: Emitting ultraviolet light, these LEDs find applications in sterilization, forensic analysis, curing, and medical devices.　　IR (Infrared) LEDs: Emitting infrared light, these LEDs are used in applications like remote controls, sensors, night vision devices, and communication systems.　　OLEDs (Organic Light-Emitting Diodes): Unlike traditional LEDs, OLEDs use organic compounds to emit light. They’re used in displays, TVs, smartphones, and lighting panels.　　Miniature LEDs: These are extremely small LEDs often used in applications like indicator lights on circuit boards, small-scale lighting, and wearable technology.　　COB LEDs (Chip-on-Board LEDs): These are multiple LED chips bonded directly to a substrate to form a single module. They offer higher light density and improved thermal management, commonly used in lighting applications.　　Smart LEDs: These are programmable LEDs that can change colors, brightness, and effects through control systems. They are used in decorative lighting, stage lighting, and smart home applications.Each type of LED has its own characteristics, advantages, and limitations, making them suitable for various applications across industries. The choice of LED type depends on factors such as brightness requirements, color range, energy efficiency, size constraints, and specific application needs.　　What are the characteristics of LEDs?1. Energy Efficiency: LEDs are highly energy-efficient, converting a higher percentage of electricity into light compared to traditional lighting sources like incandescent bulbs.　　2. Longevity: They have a long lifespan, typically lasting tens of thousands of hours, contributing to reduced maintenance and replacement costs.　　3. Durability: LEDs are solid-state devices, resistant to shock, vibration, and frequent switching. This durability makes them suitable for various applications.　　4. Small Size: LEDs are compact and come in various sizes and shapes, enabling their use in diverse applications, from indicator lights to large-scale lighting fixtures.　　What are the applications of light-emitting diode?　　Light-emitting diodes (LEDs) have found widespread applications across various industries due to their numerous advantages, such as energy efficiency, durability, long lifespan, and versatility in emitting different colors. Some key applications of LEDs include:　　● Lighting:　　• General Illumination: Used in homes, offices, and public spaces for energy-efficient lighting solutions.　　• Street Lighting: LEDs are used in streetlights due to their longevity and energy efficiency, reducing maintenance costs.　　• Automotive Lighting: Found in headlights, taillights, brake lights, interior lighting, and indicators in vehicles.　　• Architectural Lighting: Used for accent lighting, highlighting architectural features, and creating specific atmospheres in buildings.　　● Display and Signage:　　• Electronic Displays: LED screens in TVs, computer monitors, and large-scale displays due to their high brightness and color accuracy.　　• Outdoor Displays: Used in billboards, scoreboards, and outdoor signage due to their visibility in various lighting conditions.　　• Indicators: Small LEDs serve as indicator lights in devices, appliances, control panels, and electronic systems.　　● Decorative and Entertainment:　　• Decorative Lighting: LEDs are used for decorative purposes, such as in holiday lights, interior decor, and artistic installations.　　• Stage Lighting: LEDs provide colorful and dynamic lighting effects in theaters, concerts, and events.　　• Lighting Effects: Used in clubs, parties, and entertainment venues for dynamic lighting effects.　　● Specialty and Scientific Applications:　　• UV (Ultraviolet) LEDs: Used in sterilization, curing, forensic analysis, and medical devices.　　• IR (Infrared) LEDs: Employed in remote controls, sensors, night vision devices, and communication systems.　　• Plant Growth Lighting: Specific LED wavelengths aid in indoor plant growth for horticulture.　　● Emerging Applications:　　• Smart Lighting: Connected LED systems that can be controlled and programmed for various effects, integrated with smart home systems.　　• Wearable Technology: LEDs integrated into clothing, accessories, and wearable devices for visual enhancements or notifications.The versatility of LEDs and ongoing advancements in LED technology continue to expand their applications into new areas, making them increasingly prevalent across various industries.　　What is the difference between light emitting diode and Zener diode?　　The primary difference between a light-emitting diode (LED) and a Zener diode lies in their fundamental functions and operating principles:　　Light-Emitting Diode (LED):　　Function: Converts electrical energy into light energy when forward biased.　　Operation: When a forward voltage is applied across the LED, it allows current to flow, causing electrons to recombine with electron holes in the semiconductor material, emitting photons (light) in the process.　　Usage: Typically used for illumination, indicators, displays, and lighting purposes.　　Polarity: An LED is polarized and operates only in the forward direction.　　Zener Diode:　　Function: Allows current to flow in reverse bias at a specified voltage, providing a stable reference voltage for voltage regulation.　　Operation: In reverse bias, when the voltage across the Zener diode reaches its breakdown voltage (Zener voltage), it conducts current in the reverse direction, maintaining a nearly constant voltage across it.　　Usage: Primarily used for voltage regulation, protection against voltage spikes, and as a voltage reference in circuits.　　Polarity: Zener diodes are bidirectional and conduct current in both forward and reverse directions, but they are primarily used in the reverse bias mode for their voltage regulation function.In summary, while both are semiconductor diodes, their functions, operating principles, and applications differ significantly. LEDs primarily emit light when forward biased, while Zener diodes are used for voltage regulation and operate in reverse bias by allowing controlled current flow above a specific breakdown voltage.　　What material is used in the light emitting diode?Light-emitting diodes (LEDs) are primarily made from semiconductor materials that emit light when an electric current passes through them. The choice of semiconductor materials is crucial in determining the color and efficiency of the emitted light. Some of the common semiconductor materials used in LEDs include:　　Gallium Arsenide (GaAs): Used primarily for red and infrared LEDs.　　Gallium Phosphide (GaP): Used for green and yellow LEDs.　　Gallium Nitride (GaN): Used for blue, green, and white LEDs. GaN-based LEDs have enabled the production of blue LEDs, which, when combined with phosphors, produce white light.　　Indium Gallium Nitride (InGaN): Widely used for blue, green, and white LEDs. The addition of indium to gallium nitride allows for tuning the wavelength of emitted light, enabling the production of different colors.The combination of these semiconductor materials, along with doping techniques and different structures, determines the characteristics of LEDs, including their color, brightness, efficiency, and operating properties. Depending on the desired wavelength and performance, manufacturers select specific semiconductor materials and employ precise fabrication processes to create LEDs for various applications.

Key word：

emitting diode

Release time：2023-11-30 10:37 reading：2870 Continue reading>>

Trade news

Intel, Samsung, TSMC Race in Cutting-Edge Processes

　　Driven by emerging technologies like AI and high-performance computing, the semiconductor foundry industry increasingly emphasizes the importance of advanced manufacturing processes. Recently, the industry has seen significant developments. Intel announced that it has commenced large-scale production of its Intel 4 process node, while TSMC and Samsung are equally committed to advancing their advanced process technologies.　　Intel’s Mass Production of Intel 4 Process Node　　On October 15th, Intel China’s official public account revealed that Intel has initiated large-scale production of the Intel 4 process node using Extreme Ultraviolet Lithography (EUV) technology. According to Intel, they are making significant progress with their “Four Years, Five Nodes” plan. This plan aims to produce next-generation products that meet the computational demands driven by AI’s role in the “Siliconomy.”　　Being the first process node produced by Intel using EUV lithography technology, Intel 4 offers substantial improvements in performance, efficiency, and transistor density compared to its predecessors. Intel 4 was unveiled at the Intel Innovation 2023 held in September this year.　　In comparison to Intel 7, Intel 4 achieves a 2x reduction in area, providing high-performance computing (HPC) logic libraries and incorporating various innovative features.　　In detail, Intel 4 simplifies the EUV lithography process, optimizing it for high-performance computing applications, supporting both low voltage (<0.65V) and high voltage (>1.1V) operations. Compared to Intel 7, Intel 4 boasts more than a 20% improvement in iso-power performance, and high-density Metal-Insulator-Metal (MIM) capacitors deliver outstanding power supply performance.　　Intel’s “Four Years, Five Nodes” plan is advancing with the following process updates:　　Intel 7 and Intel 4 are currently in large-scale production. Intel 3 is on track to meet its planned target by the end of 2023.　　Intel’s Intel 20A and Intel 18A, which use Ribbon FET all-around gate transistors and PowerVia backside power delivery technology, are also progressing well, with a target of 2024. Intel will soon introduce the Intel 18A process design kit (PDK) for Intel Foundry Services (IFS) customers.　　With the adoption of Intel 4 process nodes, the Intel Core i9 Ultra processor, codenamed “Meteor Lake,” will be released on December 14th this year, ushering in the AIPC era.　　On Intel 3 process nodes, the energy-efficient E-core Sierra Forest processor will be launched in the first half of 2024, and the high-performance P-core Granite Rapids processor will follow closely.　　Samsung’s 2nm Process Detailed Production Plan　　Samsung has already commenced production of its second-generation 3nm chips and plans to continue focusing on 2nm chips.　　On June 28th, Samsung Electronics unveiled its latest foundry technology innovations and business strategies at the 7th Samsung Foundry Forum (SFF) in 2023.　　In the era of artificial intelligence, Samsung’s foundry program, based on advanced GAA process technology, offers robust support for customers in AI applications. To this end, Samsung has disclosed a detailed production plan and performance levels for its 2nm process. The plan is to achieve mass production for mobile applications by 2025 and respectively expand to HPC and automotive electronics in 2026 and 2027.　　Samsung reports that the 2nm process (SF2) improves performance by 12% compared to the 3nm process (SF3), increases efficiency by 25%, and reduces the area by 5%.　　Furthermore, reports indicated that Samsung is ensuring the production capacity for products using the next-generation EUV lithography machine, High-NA, in September. This equipment is expected to have a prototype by the end of this year and officially enter production next year.　　TSMC’s Mass Production of 2nm by 2025　　This year, TSMC has unveiled its latest advanced semiconductor manufacturing roadmap in various locations, including Santa Clara, California, and Taiwan. The roadmap covers a range of processes from 3nm to 2nm.　　TSMC’s current roadmap for 3nm includes N3, N3E, N3P, N3X, and N3 AE, with N3 serving as the foundational version, N3E as an enhanced version with further cost optimization, N3P focusing on improved performance with a planned start in the second half of 2024, N3X targeting high-performance computing devices with a mass production goal in 2025, and N3 AE designed specifically for the automotive sector, offering greater reliability and the potential to shorten time-to-market by 2-3 years.　　In the 2nm realm, TSMC is planning to achieve mass production of the N2 process by 2025. TSMC has reported that the N2 process will offer a 15% speed improvement over N3E at the same power or a 30% reduction in power consumption, with a 15% increase in transistor density. In September, media reports revealed that TSMC has formed a task force to accelerate 2nm pilot production and mass production, aiming for risk production next year and official mass production in 2025.　　To ensure the smooth development of 2nm process technology, TSMC has initiated efforts in the upstream equipment sector. On September 12th, TSMC announced the acquisition of a 10% stake in IMS Nanofabrication, a subsidiary of Intel, for a price not exceeding $432.8 million. IMS specializes in the research and production of electron beam lithography machines, which find extensive applications in semiconductor manufacturing, optical component manufacturing, MEMS manufacturing, and more. The industry sees TSMC’s IMS acquisition as vital for developing crucial equipment and meeting the demand for 2nm process commercialization.

Key word：

TSMC

Release time：2023-10-18 13:12 reading：1750 Continue reading>>

Trade news

Chinese MCU Manufacturers Halt Price-Cutting, MCU Industry Signals Recovery

　　Semiconductor inventory adjustments are showing positive signs, with the MCU market, which was among the first to bear the brunt of price pressure, now leading the way as Chinese companies have recently ceased their aggressive price-cutting strategies to clear their inventory. In fact, some MCU product lines have even begun to see price increases.　　According to reports from China taiwan’s Economic Daily, MCUs are widely used across various key sectors, including consumer electronics, automotive, and industrial control. The recent increase in pricing suggests a resurgence in end-demand, indicating that the semiconductor industry is on the path to recovery.　　Prominent global MCU manufacturers include Renesas, NXP, and Microchip, all of which play essential roles in the global semiconductor industry. On the other hand, China taiwan companies such as Holtek, Nuvoton, Elan, and Sonix represent the local landscape.　　Industry experts attribute the current developments to the COVID-19 pandemic, which caused disruptions in the supply chain throughout 2020 and 2021, leading to a frenzied rush to secure semiconductor components. This resulted in a surge in orders and significant price increases for ICs. However, 2022 marked a change in the industry landscape as demand weakened in various end-user applications. MCUs were hit hardest, and manufacturers’ inventories climbed steadily, reaching historical highs, with some industry leaders acknowledging that their inventory levels reached several months’ worth of supply.　　To address the challenges posed by these soaring inventories, the MCU industry faced its darkest period from the fourth quarter of last year to the first half of this year. Chinese MCU manufacturers resorted to aggressive price cuts, even drawing renowned IDMs into the price-cutting competition. Fortunately, recent market conditions have started to ease the inventory-clearing phase. Chinese MCU manufacturers, who could no longer bear losses, have stopped selling below cost and have even made slight price adjustments to return to a more reasonable pricing range.　　Unnamed China taiwan MCU manufacturers revealed that as the attitude of Chinese companies towards price-cutting has softened, the pricing gap between products from China taiwan and Chinese companies have gradually narrowed. Moreover, there are indications of small, urgently needed orders coming in, which will facilitate faster inventory reduction.

Key word：

MCU

Release time：2023-10-16 14:01 reading：1972 Continue reading>>

Trade news

BIWIN Brings UFS 3.1 Flash Memory Hitting Read Speeds up to 2100 MB/s for Flagship Smartphones

　　Smartphones have become an essential part of our everyday lives. As 5G, innovative sensors, and AI are gathering momentum, the storage market puts higher requirements on smartphones in terms of high-resolution videos and images, apps, and real-time communications. BIWIN brings proven storage solutions for your smartphones, enabling improved responsiveness and smooth user experience.　　Mobile user experience is based on three main factors: SoC, RAM, and flash memory, with memory performance and capacity having a growing impact on user experience.　　To meet the needs of flagship smartphones, BIWIN UFS 3.1 offers write speeds up to 1800 MB/s (4x faster than the previous generation of Universal Flash Storage) and read speeds up to 2100 MB/s. With a capacity up to 256 GB (the 512 GB and 1 TB versions are coming soon), BIWIN UFS 3.1 comes in a dimension of 11.5 x 13.0 x 1.0 mm. In addition, BIWIN UFS 2.2 is compatible with mainstream SoC platforms including MediaTek and Spreadtrum. And BIWIN is the first storage solution provider in China to pass MediaTek certification. BIWIN provides UFS 3.1 + LPDDR4X/5 storage solutions, with the LPDDR5 running at speeds up to 6400 Mbps and boasting a capacity up to 64 Gb.　　Firmware algorithm is the very core of the memory’s high performance and low power consumption. Bolstered by JEDEC standards, BIWIN UFS 3.1 supports Write Booster, Deep Sleep, Performance Throttling Notification, and Host Performance Booster to ensure faster speed and less power consumption. BIWIN UFS 3.1 is engineered to offer better user experience in HD video decoding, program installation and startup, continuous shooting, image loading, large file copy, game loading and more.　　BIWIN storage products have entered the supply chain system of mainstream smart terminal manufacturers. In the future, we will continue to deepen the integration of R&D, packaging and testing, giving full play to our advantages in embedded storage in order to help customers increase the competitiveness of their terminal products.

Key word：

BIWIN

Release time：2023-09-01 13:11 reading：4094 Continue reading>>

Trade news

Cutting edge transistors for semiconductors of the future

　　As traditional transistors reach the threshold of their miniaturization potential, the ability to incorporate multiple functionalities within a limited number of units becomes crucial for facilitating the creation of compact, energy-efficient circuits. This, in turn, paves the way for enhanced memory capabilities and the realization of more potent computing systems.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　In view of the constantly increasing need for better, more powerful and efficient circuits, there is a great interest in reconfigurable transistors. The advantage of these is that, in contrast to standard semiconductors, it is possible to change the transistor's properties after they have been manufactured.　　Historically, computers' computational power and efficiency have been improved by scaling down the silicon transistor's size (also known as Moore's Law). But now a stage has been reached where the costs for continuing development along those lines has become much higher, and quantum mechanics problems have arisen that have slowed development.　　Instead, the search is on for new materials, components and circuits. Lund University is among the world leaders in III-V materials, which are an alternative to silicon. These are materials with considerable potential in the development of high-frequency technology (such as parts for future 6G and 7G networks), optical applications and increasingly energy-efficient electronic components.　　Ferroelectric materials are used in order to realize this potential. These are special materials that can change their inner polarization when exposed to an electric field. It can be compared to an ordinary magnet, but instead of a magnetic north and South Pole, electric poles are formed with a positive and a negative charge on each side of the material. By changing the polarization, it is possible to control the transistor. Another advantage is that the material "remembers" its polarization, even if the current is turned off.　　Through a new combination of materials, the researchers have created ferroelectric "grains" that control a tunnel junction—an electrical bridging effect—in the transistor. This is on an extremely small scale—a grain is 10 nanometers in size. By measuring fluctuations in the voltage or current, it has been possible to identify when polarization changes in the individual grains and thus understand how this affects the transistor's behavior.　　- The Future of the Semiconductor Industry　　In addition to the upstream IC design, the midstream foundry, the DRAM industry, and the downstream packaging and testing, photomask, equipment and other industries, semiconductors have a huge group, and the application of semiconductors has also expanded to the electronic information industry, automotive electronics, Aerospace, medical, precision machinery and other industries.　　While the future of the semiconductor industry looks bright, no one knows with certainty where it’s headed. The direction it moves in depends on many factors, which include the following:　　· the experimentation with new semiconductor materials　　· the increase in the price of rare earth metals　　· the accelerated industrial adoption of new technologies in artificial intelligence (AI), the Internet of Things (IoT), and related fields　　These factors and others will inevitably impact sales, create opportunities, and present fresh challenges.　　At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as we continue to pioneer advances in integrated circuits. Each generation of innovation builds upon the last to make technology smaller, more efficient, more reliable and more affordable. Contact us today to learn more about the services provided by Ameya360.

Key word：

semiconductor

Release time：2023-07-11 11:46 reading：3445 Continue reading>>

Trade news

AMEYA360:How ABB Is Getting Ahead of Network Outages

　　Issues tend to crop up at the worst possible time. Network engineers know this all too well. This is just one reason why it’s critical to have a reliable out-of-band management solution available when you experience a network outage.　　Network engineers already understand the many factors that could cause a disruption: Hardware failures cause 34%, human errors cause another 21.5%, and hacks or security breaches bring another 18.7%.　　Matt Witmer, Senior Principal Engineer, Opengear　　Regardless of an outage’s root cause, every minute of downtime is costly. A recent survey of global managers, directors, VPs and executives found the average amount lost due to network outages is roughly $13,000 per minute — and that’s just the financial element. Damage to a company’s reputation, stress put on IT professionals rushing to fix the problem, dissatisfied customers — and the corresponding fallout from each — all represent significant costs as well.　　Consider the case of ABB, a leading global industrial technology company with a comprehensive portfolio of products in the robotics and electronics spaces. ABB was recently looking for a reliable out-of-band solution to monitor and secure its network and the numerous AIoT devices connected to it. The modernization was much needed, as the company had previously relied on 56Kbps modems and analog telephone lines to provide 24/7 connectivity to multiple physical locations, including data centers, distribution centers, manufacturing facilities and sales offices. So, any disruption would result in lost business, service interruptions and poor customer service experiences.　　ABB’s U.S. network and voice services team was tasked with overseeing the upgrade, opting for Opengear solutions, starting with our ACM7000 Resilience Gateways. These products provide in-band and out-of-band access to AIoT devices. Providing secure, out-of-band remote access at edge locations, thanks to an embedded, global 4G-LTE cellular modem that provides an alternate path when the primary link is down, the gateways were deployed at different ABB facilities, with the 4-port versions going to manufacturing sites. Our eight-port gateways were placed at ABB’s distribution centers to ensure business continuity. Finally, for its data centers, ABB chose our 48-port CM7100 Console Server, which offers 16-96 serial console ports with simple straight-through cabling to Cisco-style serial consoles, ideal for large compute locations.　　Not long after a successful deployment of our advanced routers, modems and remote-management tools, ABB experienced a network outage during a standard data center migration from one circuit carrier to another. ABB’s IT team was able to quickly access the data center network with new, out-of-band management capabilities, keeping downtime to a minimum and keeping AIoT devices secure.　　Since the initial rollout, ABB has added more Opengear devices in its network. Today, the company has hundreds of them across two data centers, two distribution centers, plus its manufacturing sites and sales offices — all in the name of business continuity and AIoT device security.　　ABB is now able to remotely monitor, safeguard against and repair network outages when they occur. As a result, the company ensures its IoT devices are securely connected and minimizes costly downtime.

Key word：

AMEYA360,ABB

Release time：2023-04-11 11:44 reading：3605 Continue reading>>

Trade news

Crystal clear: Understanding magnetism changes caused by crystal lattice expansion

The pattern of arrangement of atoms in a crystal, called the crystal lattice, can have a huge effect on the properties of solid materials. Controlling and harnessing these properties is a challenge that promises rewards in applications such as novel sensors and new solid-state devices. An international research collaboration, including researchers from Osaka University, has reported the induction of an interesting type of magnetic order, called helimagnetism, in a cobalt oxide material by expanding its lattice structure. Their findings were published in Physical Review Materials.This is a schematic illustration of the helimagnetic-ferromagnetic transition driven by the lattice expansion/compression in the cubic perovskite Sr1-xBaxCoO3. Credit: S. Ishiwata and H. SakaiMagnetic behavior results from the order of the magnetic moments of the many individual atoms in a material. In helimagnetism, instead of the magnetic moments being aligned–as they are in permanent magnets, producing ferromagnetism–the moments arrange themselves in a helical pattern. This behavior is generally only observed in complicated lattice structures where different types of magnetic interactions compete with each other, therefore the report of induced helimagnetism in a simple cubic cobalt oxide structure, is highly significant.“We have shown emergent helical spin order in a cubic perovskite-type material, which we achieved simply by expanding the lattice size,” study first author Hideaki Sakai says. “We were able to control the size of the lattice expansion by using a high-pressure technique to grow a series of single crystals with particular chemical compositions. Changing the amount of different ions in our materials provided us with sufficient control to investigate the magnetic properties.”Systematically replacing strontium ions in the structure with larger barium ions caused the lattice to continually expand until the regular ferromagnetic magnetic order present at room temperature was disrupted, resulting in helimagnetism. These experimental findings were successfully supported by calculations.“The fact that we were able to largely reproduce our findings by first principles calculations verifies that the magnetic interactions in the materials are highly sensitive to the lattice constant,” Sakai says. “The more we can understand about the magnetic behavior of crystalline materials, the closer we move towards translating their properties into useful functions. We hope that our findings will pave the way for novel sensor applications.The control of magnetic order simply by changing the lattice chemistry, as demonstrated by this research, provides a foundation for investigating the properties of many other crystalline materials.

Key word：

Instant news

Release time：2018-12-07 00:00 reading：1358 Continue reading>>

Trade news

Foundry Market Getting Bigger Boost From China

China-based fabless IC firms are expected to account for 19% of the global total of pure-play foundry sales in 2018, up from about 9% in 2016 and about 13% last year, according to market research firm IC Insights.Overall, IC Insights forecasts that the pure-play foundry market will be worth about $59 billion this year, up 8% compared with 2017. China is forecast to be responsible for 90% of the $4.2 billion increase in the total pure-play foundry market this year, the firm said.With the rise of fabless firms in China in recent years, the country's share of the global pure-play foundry market has been growing rapidly. But in 2018, China's pure-play foundry business is projected to grow at the fastest rate yet, rising by 51% to reach $11.25 billion — more than any other market outside of North America. The 51% growth rate of sales to China is more than eight times the forecast 8% rise for the market as a whole.TSMC — by far the market leader in pure-play foundry — is expected to see its sales to China increase by 79% to $1.8 billion this year to reach $6.7 billion, IC Insights said. The firm projects that China will account for essentially all of TSMC's sales increase this year. TSMC's sales to China increased by 44% last year, the firm said.IC Insights credits much of TSMC's sales surge into China in recent years to increased demand for custom devices going into the cryptocurrency market. Many of the large cryptocurrency fabless design firms are based in China and most of them have been turning to TSMC to produce their advanced chips for these applications, IC Insights said.IC Insights noted that TSMC has indicated it expects a slowdown in its cryptocurrency business in the second half of this year. The firm added that TSMC realized from the beginning that the cryptocurrency market would be volatile and did not adjust its capacity plans based on the strength of the market or incorporate cryptocurrency business assumptions into its forecasts for future long-term growth.

Key word：

Market trend

Release time：2018-10-09 00:00 reading：1249 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi

model	brand	To snap up
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
ESR03EZPJ151	ROHM Semiconductor

PART	Quantity*	Target Price
	Quantity MOQ: 1	Target Price $ If not sure, you may skip this
remark

Telephone *	Name
Company
Email