SiC-MOSFET的特征有哪些

Release time：2022-12-28
author：Ameya360
source：网络
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　　目前SiC-MOSFET有用的范围是耐压600V以上、特别是1kV以上。今天Ameya360电子元器件采购网将为您带来介绍！关于优势，现将1kV以上的产品与当前主流的Si-IGBT来比较一下看看。相对于IGBT，SiC-MOSFET降低了开关关断时的损耗，实现了高频率工作，有助于应用的小型化。相对于同等耐压的SJ-MOSFET（超级结MOSFET），导通电阻较小，可减少相同导通电阻的芯片面积，并显著降低恢复损耗。

SiC-MOSFET的特征有哪些

　　下表是600V～2000V耐压的功率元器件的特征汇总。

SiC-MOSFET的特征有哪些

　　雷达图的RonA为单位面积的导通电阻（表示传导时损耗的参数），BV为元器件耐压，Err为恢复损耗，Eoff为关断开关的损耗。SiC已经很完美，在目前情况的比较中绝非高估。


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