3PEAK Announces TPM2351x Series Isolated Gate Drivers with ±150-kV/μs CMTI!

　　3PEAK (stock code: 688536), a semiconductor company focusing on the development of high-performance analog chips and embedded processors, has recently unveiled the TPM2351x series isolated gate drivers with ±150-kV/μs CMTI, which can be widely used in IGBTs, SiC MOSFETs, and other power devices.

　　Highlights of TPM2351x

　　Single-Channel Isolated Gate Driver Compatible with Optocoupler Input

　　Outputs 4.5-A Peak Source Current and 5-A Peak Sink Current

　　40-V Output Power Voltage

　　Input Stage with 6-V Polarity Reversal Voltage Handling Capability

　　70-ns Transfer Delay

　　25-ns Inter-Device Delay Matching

　　35-ns Pulse Width Distortion

　　5-kVrms Enhanced Isolation Level

　　Minimum Common-Mode Transient Immunity (CMTI) of ±150 kV/μs

　　WSOP Wide Package

　　Operating Temperature Range: –40°C to +125°C

　　Advantages of TPM2351x

　　Minimum CMTI: ±150 kV/μs

　　3PEAK TPM2351x series products can withstand Common-Mode Transient Immunity (CMTI) of ±150 kV/μs or more. Therefore, they are extensively used in IGBTs, SiC MOSFETs, and other power devices. The figure below shows the output waveform of TPM2351X at ±160-kV/μs CMT, which indicates that the output is not affected by high transient interference at the primary and secondary edges.

　　TPM23514M provides a built-in Miller clamp to reduce the risk of power device crosstalk under high-speed switching. The following figure uses a double-pulse experiment to compare the waveforms of the gate-source voltage (Vgs) of the power device before and after the Miller clamp is applied. Before the Miller clamp is applied, the voltage change (ΔV) of the high-side switch Vgs reaches 5 V during the turn-on transient of the low-side switch. After the Miller clamp is applied, the voltage change (ΔV) is reduced to 2 V, which greatly reduces the risk of crosstalk for the high-side switch.

　　Typical Application of TPM2351x Products

　　The TPM2351x series drivers support bipolar power supply and can effectively drive SiC MOSFETs, IGBTs, and other power devices. In addition, TPM23514M provides a built-in Miller clamp function, which can reduce the risk of power device mis-conductivity under high-speed switching.