AMEYA360:Onsemi NTH4L028N170M1 Silicon Carbide (SiC) MOSFET

　　Anson Mae NTH4L028N170M1 Silicon Carbide (SiC) MOSFET optimized for fast switching applications. Anson MOSFET uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak. The series provides optimum performance when driven by a 20V grid drive, but can also be used in conjunction with an 18V grid drive.

　　At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.

　　The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation and gate noise.

　　Characteristic

　　Typical value RDS(on) = 28mΩ (VGS = 20V)

　　Ultra-low grid charge (QG(tot)=200nC)

　　High speed switch with low capacitance (Coss=200pF)

　　100% avalanche tested

　　These devices are lead free and comply with the RoHS directive

　　Application

　　UPS

　　Dc/DC converter

　　Boost converter