STMicroelectronics SGT120R65AL e-mode PowerGaN Transistor offers 650V and 15A while combining well-established packaging technology. The SGT120R65AL G-HEMT device features extremely low conduction losses, high current capability, and ultra-fast switching operation. These features allow the STM SGT120R65AL to achieve high power density and unbeatable efficiency.
FEATURES
Enhancement mode normally-off transistor
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
APPLICATIONS
Adapters for tablets, notebooks, and AIO
USB Type-C PD adapters and quick chargers
Wireless chargers
APPLICATION CIRCUIT
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